DE60336471D1 - Verfahren und einrichtung zur messung von waferpotential oder -temperatur - Google Patents

Verfahren und einrichtung zur messung von waferpotential oder -temperatur

Info

Publication number
DE60336471D1
DE60336471D1 DE60336471T DE60336471T DE60336471D1 DE 60336471 D1 DE60336471 D1 DE 60336471D1 DE 60336471 T DE60336471 T DE 60336471T DE 60336471 T DE60336471 T DE 60336471T DE 60336471 D1 DE60336471 D1 DE 60336471D1
Authority
DE
Germany
Prior art keywords
temperature
measuring wafer
wafer potential
potential
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60336471T
Other languages
English (en)
Inventor
Ryuichi Matsuda
Yuichi Kawano
Masahiko Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002175247A external-priority patent/JP3861030B2/ja
Priority claimed from JP2002184160A external-priority patent/JP2004031554A/ja
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Application granted granted Critical
Publication of DE60336471D1 publication Critical patent/DE60336471D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
DE60336471T 2002-06-17 2003-06-17 Verfahren und einrichtung zur messung von waferpotential oder -temperatur Expired - Lifetime DE60336471D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002175247A JP3861030B2 (ja) 2002-06-17 2002-06-17 ウェーハ電位の測定方法及び装置
JP2002184160A JP2004031554A (ja) 2002-06-25 2002-06-25 ウェーハ温度の検出方法及び装置
PCT/JP2003/007649 WO2003107415A1 (ja) 2002-06-17 2003-06-17 ウェーハ電位又は温度の測定方法及び装置

Publications (1)

Publication Number Publication Date
DE60336471D1 true DE60336471D1 (de) 2011-05-05

Family

ID=29738413

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60336471T Expired - Lifetime DE60336471D1 (de) 2002-06-17 2003-06-17 Verfahren und einrichtung zur messung von waferpotential oder -temperatur

Country Status (6)

Country Link
US (1) US7335315B2 (de)
EP (1) EP1515363B1 (de)
KR (1) KR100603169B1 (de)
DE (1) DE60336471D1 (de)
TW (1) TW200404334A (de)
WO (1) WO2003107415A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4928817B2 (ja) * 2006-04-07 2012-05-09 株式会社日立ハイテクノロジーズ プラズマ処理装置
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
CN102449754B (zh) 2009-05-15 2015-10-21 恩特格林斯公司 具有聚合物突出物的静电吸盘
KR101731136B1 (ko) 2010-05-28 2017-04-27 엔테그리스, 아이엔씨. 표면저항이 높은 정전 척
JP5875775B2 (ja) * 2011-03-30 2016-03-02 東京エレクトロン株式会社 基板除去方法及び記憶媒体
JP6407694B2 (ja) * 2014-12-16 2018-10-17 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10969370B2 (en) * 2015-06-05 2021-04-06 Semilab Semiconductor Physics Laboratory Co., Ltd. Measuring semiconductor doping using constant surface potential corona charging
JP6522180B1 (ja) 2018-02-08 2019-05-29 Sppテクノロジーズ株式会社 基板載置台及びこれを備えたプラズマ処理装置及びプラズマ処理方法
CN112735965B (zh) * 2020-12-25 2024-02-27 北京北方华创微电子装备有限公司 半导体设备及其承载装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151568A (ja) * 1992-11-02 1994-05-31 Nippon Steel Corp 静電チャック装置
JPH1014266A (ja) * 1996-06-21 1998-01-16 Sony Corp 静電チャック装置及び静電チャックを用いたウエハの保持方法及び静電チャックからのウエハの脱着方法
US6198616B1 (en) 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
JP2000021964A (ja) * 1998-07-06 2000-01-21 Ngk Insulators Ltd 静電チャックのパーティクル発生低減方法および半導体製造装置
JP2000332075A (ja) 1999-05-24 2000-11-30 Hitachi Ltd 温度測定用ウエハ
JP2002009140A (ja) * 2000-06-22 2002-01-11 Mitsubishi Electric Corp 静電チャック装置
US7208067B2 (en) * 2003-03-27 2007-04-24 Tokyo Electron Limited Method and system for monitoring RF impedance to determine conditions of a wafer on an electrostatic chuck

Also Published As

Publication number Publication date
WO2003107415A1 (ja) 2003-12-24
KR20050010517A (ko) 2005-01-27
US20050174135A1 (en) 2005-08-11
EP1515363B1 (de) 2011-03-23
US7335315B2 (en) 2008-02-26
KR100603169B1 (ko) 2006-07-24
TW200404334A (en) 2004-03-16
EP1515363A4 (de) 2007-05-09
EP1515363A1 (de) 2005-03-16
TWI300242B (de) 2008-08-21

Similar Documents

Publication Publication Date Title
ATA2672002A (de) Verfahren und einrichtung zur elektrooptischen distanzmessung
DE602004011785D1 (de) Verfahren und vorrichtung zur messung der reifengleichförmigkeit
DE60329577D1 (de) Verfahren und vorrichtung zur messung von statischen magnetfeldern
DE502004004343D1 (de) Verfahren und Vorrichtung zur Abstandsmessung
DE50109562D1 (de) Vorrichtung und verfahren zur winkelmessung
DE10391610D2 (de) Verfahren und Vorrichtung zur Erfassung von Ortsverschiebungen und Drehbewegungen
DE60229993D1 (de) Verfahren und Vorrichtung zur Messung von Ramanverstärkung
DE50309503D1 (de) Verfahren und einrichtung zur objektdetektierung
DE60124225D1 (de) Verfahren und Vorrichtung zur Erkennung von Emotionen
DE60129691D1 (de) Verfahren und vorrichtung zur messung der fluoreszenz
DE60124647D1 (de) Vorrichtung und Verfahren zur Abstandsmessung
DE50312666D1 (de) Vorrichtung und verfahren zur distanzmessung
DE602004016422D1 (de) Verfahren und Vorrichtung zur Prüfung von Halbleiterelementen
DE10196012T1 (de) Verfahren und Vorrichtung zur Viskositätsmessung
DE50309469D1 (de) Verfahren und messgerät zur ortung eingeschlossener objekte
DE60209608D1 (de) Verfahren und Vorrichtung zur Ermittlung von Strassenzuständen
DE60304078D1 (de) Verfahren und Vorrichtung zur Durchfürung von Interfrequenz-Messungen
DE502004006790D1 (de) Verfahren und vorrichtung zur spannungsmessung
DE60028581D1 (de) Verfahren und gerät zur entfernungsmessung
DE60308471D1 (de) Verfahren und Vorrichtung zur Inspektion von Oberflächen
DE60238082D1 (de) Verfahren und vorrichtung zur messung der geschwindigkeit von chromatographischen impulsen
DE502004002649D1 (de) Verfahren und vorrichtung zur messung von funkstörpegeln mit frequenznachführung
DE60313244D1 (de) Vorrichtung und Verfahren zur Verkehrsmessung
DE60336471D1 (de) Verfahren und einrichtung zur messung von waferpotential oder -temperatur
ATE430916T1 (de) Verfahren und vorrichtung zur entfernungsbestimmung