JP2019102814A5 - - Google Patents

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JP2019102814A5
JP2019102814A5 JP2018223610A JP2018223610A JP2019102814A5 JP 2019102814 A5 JP2019102814 A5 JP 2019102814A5 JP 2018223610 A JP2018223610 A JP 2018223610A JP 2018223610 A JP2018223610 A JP 2018223610A JP 2019102814 A5 JP2019102814 A5 JP 2019102814A5
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JP2018223610A 2017-12-01 2018-11-29 溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール Active JP7283890B2 (ja)

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JP2023082625A JP2023096135A (ja) 2017-12-01 2023-05-18 溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール

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DE102017128633.0 2017-12-01
DE102017128633.0A DE102017128633B4 (de) 2017-12-01 2017-12-01 Siliziumcarbid-halbleiterbauelement mit grabengatestrukturen und abschirmgebieten

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JP2019102814A JP2019102814A (ja) 2019-06-24
JP2019102814A5 true JP2019102814A5 (enExample) 2021-10-28
JP7283890B2 JP7283890B2 (ja) 2023-05-30

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JP2023082625A Pending JP2023096135A (ja) 2017-12-01 2023-05-18 溝ゲート構造およびシールド領域を備えた炭化ケイ素半導体モジュール

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