JP2011054885A5 - - Google Patents

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Publication number
JP2011054885A5
JP2011054885A5 JP2009204662A JP2009204662A JP2011054885A5 JP 2011054885 A5 JP2011054885 A5 JP 2011054885A5 JP 2009204662 A JP2009204662 A JP 2009204662A JP 2009204662 A JP2009204662 A JP 2009204662A JP 2011054885 A5 JP2011054885 A5 JP 2011054885A5
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JP
Japan
Prior art keywords
region
pillar
semiconductor
conductivity type
width
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Abandoned
Application number
JP2009204662A
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English (en)
Japanese (ja)
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JP2011054885A (ja
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Publication date
Application filed filed Critical
Priority to JP2009204662A priority Critical patent/JP2011054885A/ja
Priority claimed from JP2009204662A external-priority patent/JP2011054885A/ja
Priority to US12/869,952 priority patent/US8212314B2/en
Publication of JP2011054885A publication Critical patent/JP2011054885A/ja
Priority to US13/527,194 priority patent/US20120261764A1/en
Publication of JP2011054885A5 publication Critical patent/JP2011054885A5/ja
Abandoned legal-status Critical Current

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JP2009204662A 2009-09-04 2009-09-04 半導体装置及び半導体装置の製造方法 Abandoned JP2011054885A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009204662A JP2011054885A (ja) 2009-09-04 2009-09-04 半導体装置及び半導体装置の製造方法
US12/869,952 US8212314B2 (en) 2009-09-04 2010-08-27 Semiconductor device and method for manufacturing the same
US13/527,194 US20120261764A1 (en) 2009-09-04 2012-06-19 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009204662A JP2011054885A (ja) 2009-09-04 2009-09-04 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2011054885A JP2011054885A (ja) 2011-03-17
JP2011054885A5 true JP2011054885A5 (enExample) 2012-10-04

Family

ID=43647044

Family Applications (1)

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JP2009204662A Abandoned JP2011054885A (ja) 2009-09-04 2009-09-04 半導体装置及び半導体装置の製造方法

Country Status (2)

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US (2) US8212314B2 (enExample)
JP (1) JP2011054885A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5629994B2 (ja) * 2009-09-04 2014-11-26 ソニー株式会社 半導体装置及び半導体装置の製造方法
US8829640B2 (en) * 2011-03-29 2014-09-09 Alpha And Omega Semiconductor Incorporated Configuration and method to generate saddle junction electric field in edge termination
US10027268B2 (en) * 2012-06-08 2018-07-17 Mitsubishi Electric Corporation Motor incorporating power converter, and air conditioner, water heater, and ventilation blower incorporating the motor
JP2014045138A (ja) * 2012-08-28 2014-03-13 Toshiba Corp トレンチ形成方法及び半導体装置の製造方法
CN102931218B (zh) * 2012-09-29 2015-03-18 西安龙腾新能源科技发展有限公司 超结器件的结终端结构
US9184277B2 (en) * 2012-10-31 2015-11-10 Infineon Technologies Austria Ag Super junction semiconductor device comprising a cell area and an edge area
CN103887338B (zh) * 2012-12-21 2019-03-01 上海矽睿科技有限公司 一种适用于深槽超结器件的结终端及其制备方法
US9117694B2 (en) 2013-05-01 2015-08-25 Infineon Technologies Austria Ag Super junction structure semiconductor device based on a compensation structure including compensation layers and a fill structure
US9515136B2 (en) * 2014-06-18 2016-12-06 Stmicroelectronics S.R.L. Edge termination structure for a power integrated device and corresponding manufacturing process
CN105742179B (zh) * 2014-12-09 2019-01-11 深圳芯能半导体技术有限公司 一种igbt器件的制备方法
DE102015208794B3 (de) * 2015-05-12 2016-09-15 Infineon Technologies Ag Verarbeiten eines Halbleiterwafers
US9478644B1 (en) * 2015-10-19 2016-10-25 Vanguard International Semiconductor Corporation Semiconductor device
TWI575570B (zh) * 2015-12-23 2017-03-21 世界先進積體電路股份有限公司 半導體裝置及其製造方法
US9666699B1 (en) 2016-03-30 2017-05-30 Vanguard International Semiconductor Corporation Semiconductor device having field plate disposed on isolation feature and method for forming the same
EP3916761A1 (en) * 2020-05-27 2021-12-01 Infineon Technologies Austria AG Method for producing a superjunction device
CN113517336A (zh) * 2021-07-13 2021-10-19 电子科技大学 一种mos型超结功率器件的终端结构
US11742354B2 (en) 2021-09-23 2023-08-29 International Business Machines Corporation Top epitaxial layer and contact for VTFET
CN119342875B (zh) * 2024-12-20 2025-04-29 北京怀柔实验室 半导体功率器件的终端结构及其制作方法
CN119562577B (zh) * 2025-01-27 2025-05-27 北京怀柔实验室 半导体器件的终端结构及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4309764C2 (de) 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET

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