JP2019102582A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2019102582A JP2019102582A JP2017230216A JP2017230216A JP2019102582A JP 2019102582 A JP2019102582 A JP 2019102582A JP 2017230216 A JP2017230216 A JP 2017230216A JP 2017230216 A JP2017230216 A JP 2017230216A JP 2019102582 A JP2019102582 A JP 2019102582A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting device
- frame
- light emitting
- main body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims description 59
- 239000011521 glass Substances 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000000428 dust Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/0222—Gas-filled housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10344—Aluminium gallium nitride [AlGaN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10346—Indium gallium nitride [InGaN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
図1に本実施形態に係る発光装置200の斜視図を示し、図2に発光装置200の上面図を示し、図3に図2のIII−IIIにおける断面図を示し、図4に図3の破線枠内の拡大図を示し、図5に図2のV−Vにおける断面図を示す。
基体10は、本体部11と、本体部11の上面に設けられた枠部12と、を有する。
基体10の本体部11の上面には、1以上のレーザ素子20が配置されている。2以上のレーザ素子20が本体部11の上面に配置されていることが好ましく、ここでは、14個のレーザ素子20が配置されている。レーザ素子20の数が多くなるほどレーザ素子20全体で発生する熱量が多くなり、本体部11が反りやすくなるため、本実施形態による透光部32の破損を低減する効果が顕著となる。X方向におけるレーザ素子20の数は、Y方向におけるレーザ素子20の数よりも多いことが好ましい。Y方向におけるレーザ光の広がりに比べてX方向におけるレーザ光の広がりが狭いため、本体部11を大きくすることなく本体部11に配置できるレーザ素子20の数を増やすことができるためである。また、本体部11の大きさを大きくする必要がないため、本体部11が反りやすくなることを抑制できる。
枠部12の上面には、蓋体30が固定されている。蓋体30は、上方から視て枠部12の内側で開口した支持部31と、開口を塞ぐ透光部32と、を有する。蓋体30に関する以下の説明では、「平行」とは基準面に対して完全に平行なものだけではなく、10度以下で傾くものも含まれる。また、「垂直」とは基準面に対して完全に垂直なものだけではなく、10度以下で傾くものも含まれる。
レンズ体40は、透光部32から上方に離間して配置され、レーザ素子20からの光の配光を制御する。レンズ体40は、支持部31の第1部位31aの内縁よりも内側に固定されている。これにより、第1部位31aの上面に他の部材を固定しやすくなる。例えば、図6及び図7に示すように、レンズ体40への集塵を低減するために、第1部位31aの上面に筒状の導光部材100を固定し、導光部材100の端部を蓋110で覆うことができる。つまり、導光部材100の一端と第1部位31aとが固定され、導光部材100の他端と蓋110とが固定されている。これにより、比較的大きな塵等がレンズ体40に付着することを低減することができる。支持部31と導光部材100と蓋110とにより構成される空間は、気密封止された空間とすることが好ましい。これにより、レンズ体40が配置される空間に比較的小さな塵が侵入することを抑制することができるため、発光装置200の信頼性を向上させることができる。
11…本体部
12…枠部
13…リードピン
20…レーザ素子
30…蓋体
31…支持部
31a…第1部位
31b…第2部位
31c…第3部位
31d…第4部位
31e…第5部位
31f…第6部位
31g…第7部位
32…透光部
33…第1接合材
40…レンズ体
41…レンズ部
42…非レンズ部
50…第2接合材
60…ワイヤ
70、80…サブマウント
90…光反射体
100…導光部材
110…蓋
200…発光装置
Claims (7)
- 本体部と、前記本体部の上面に設けられた枠部と、を有する基体と、
前記枠部の内側であって前記本体部の上面に設けられた1以上のレーザ素子と、
前記枠部の上面に固定され且つ前記枠部の内側に開口が設けられた支持部と、前記開口を塞ぐように設けられた透光部と、を有する蓋体と、
前記透光部の上方に配置されるレンズ体と、を備える発光装置であって、
前記支持部は、
前記枠部の上面に固定される第1部位と、
前記第1部位の内側において前記第1部位よりも低い位置に設けられた、前記レンズ体が配置される第2部位と、
前記第2部位の内側において前記第2部位よりも低い位置に設けられた、前記透光部が配置される第3部位と、を有し、
前記透光部と前記レンズ体との熱膨張係数差は、前記透光部と前記本体部との熱膨張係数差よりも小さいことを特徴とする発光装置。 - 前記支持部は、上方から視て前記第2部位と前記第3部位との間に、前記第2部位よりも低い位置で且つ前記第3部位よりも高い位置に設けられた第4部位を有していることを特徴とする請求項1に記載の発光装置。
- 前記支持部は、前記枠部から内側に離間した位置において、前記第1部位と前記第2部位とを繋ぐ第5部位を有し、
前記第5部位は、前記第2部位よりも低い位置で下に凸となるように屈曲していることを特徴とする請求項1又は請求項2に記載の発光装置。 - 前記本体部の上面には、前記1以上のレーザ素子として2以上のレーザ素子が配置されていることを特徴とする請求項1〜3のいずれか1項に記載の発光装置。
- 前記透光部は、第1接合材で固定されており、
前記レンズ体は、前記第1接合材よりもヤング率が小さい第2接合材で固定されていることを特徴とする請求項1〜4のいずれか1項に記載の発光装置。 - 前記第1接合材はガラスであり、
前記第2接合材は樹脂であることを特徴とする請求項5に記載の発光装置。 - 前記蓋体における前記第1部位の上面に、その一端が固定された筒状の導光部材と、
前記導光部材の他端を覆うように固定された蓋と、を備えることを特徴とする請求項1〜6のいずれか1項に記載の発光装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017230216A JP6687008B2 (ja) | 2017-11-30 | 2017-11-30 | 発光装置 |
US16/203,477 US10608406B2 (en) | 2017-11-30 | 2018-11-28 | Light emitting device |
US16/794,476 US10965097B2 (en) | 2017-11-30 | 2020-02-19 | Light emitting device |
JP2020050785A JP6897830B2 (ja) | 2017-11-30 | 2020-03-23 | 発光装置 |
US17/169,224 US11367994B2 (en) | 2017-11-30 | 2021-02-05 | Light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017230216A JP6687008B2 (ja) | 2017-11-30 | 2017-11-30 | 発光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020050785A Division JP6897830B2 (ja) | 2017-11-30 | 2020-03-23 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019102582A true JP2019102582A (ja) | 2019-06-24 |
JP6687008B2 JP6687008B2 (ja) | 2020-04-22 |
Family
ID=66632783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017230216A Active JP6687008B2 (ja) | 2017-11-30 | 2017-11-30 | 発光装置 |
Country Status (2)
Country | Link |
---|---|
US (3) | US10608406B2 (ja) |
JP (1) | JP6687008B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022259889A1 (ja) * | 2021-06-10 | 2022-12-15 | ヌヴォトンテクノロジージャパン株式会社 | 光源装置 |
JP2023067026A (ja) * | 2021-10-29 | 2023-05-16 | 日亜化学工業株式会社 | 発光装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114122902B (zh) * | 2020-08-27 | 2024-10-11 | 青岛海信激光显示股份有限公司 | 激光器 |
JP7008122B1 (ja) | 2020-12-22 | 2022-01-25 | 日機装株式会社 | 光半導体装置および光半導体装置の製造方法 |
Citations (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55162286A (en) * | 1979-05-31 | 1980-12-17 | Philips Nv | Coupling element |
JPS59228615A (ja) * | 1983-06-10 | 1984-12-22 | Ricoh Co Ltd | レンズ組立方法 |
JPS6156685U (ja) * | 1984-09-19 | 1986-04-16 | ||
JPH06151628A (ja) * | 1992-10-30 | 1994-05-31 | Ngk Spark Plug Co Ltd | 半導体素子用セラミック容器 |
JPH10256648A (ja) * | 1997-03-13 | 1998-09-25 | Hitachi Ltd | レーザダイオード・モジュール |
JP2002270944A (ja) * | 2001-03-12 | 2002-09-20 | Kyocera Corp | 光半導体素子収納用パッケージ |
JP2002289958A (ja) * | 2001-03-26 | 2002-10-04 | Kyocera Corp | 光半導体装置 |
JP2004014579A (ja) * | 2002-06-03 | 2004-01-15 | Kyocera Corp | 光半導体素子収納用パッケージ |
JP2004335533A (ja) * | 2003-04-30 | 2004-11-25 | Canon Inc | マルチチップパッケージ |
JP2005093675A (ja) * | 2003-09-17 | 2005-04-07 | Kyocera Corp | 蓋体およびこれを用いた光半導体素子収納用パッケージ |
JP2007157920A (ja) * | 2005-12-02 | 2007-06-21 | Matsushita Electric Ind Co Ltd | レンズキャップの製造方法及びこれに用いるレンズキャップ組立治具 |
WO2011040250A1 (ja) * | 2009-09-29 | 2011-04-07 | コニカミノルタホールディングス株式会社 | アクチュエータ、駆動装置、およびカメラモジュール |
WO2013027669A1 (ja) * | 2011-08-22 | 2013-02-28 | 京セラ株式会社 | 光半導体装置 |
JP2014095796A (ja) * | 2012-11-09 | 2014-05-22 | Ricoh Co Ltd | 光偏向装置及び画像投影装置 |
JP2014522086A (ja) * | 2011-08-02 | 2014-08-28 | シカト・インコーポレイテッド | 優先的に照射される色変換面を有するledベース照明モジュール |
JP2015118967A (ja) * | 2013-12-17 | 2015-06-25 | 新光電気工業株式会社 | 金属キャップ及び発光装置 |
US20150270682A1 (en) * | 2014-03-24 | 2015-09-24 | Osram Gmbh | Light source arrangement |
JP2015195330A (ja) * | 2013-08-26 | 2015-11-05 | 京セラ株式会社 | 光学装置用カバー部材および光学装置 |
WO2016042819A1 (ja) * | 2014-09-19 | 2016-03-24 | 京セラ株式会社 | 電子素子実装用基板および電子装置 |
JP2016219779A (ja) * | 2015-05-20 | 2016-12-22 | 日亜化学工業株式会社 | 発光装置 |
JP2017034242A (ja) * | 2015-07-28 | 2017-02-09 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP2017139444A (ja) * | 2016-01-29 | 2017-08-10 | セイコーエプソン株式会社 | 光源装置、光源装置の製造方法およびプロジェクター |
JP2017523467A (ja) * | 2014-07-23 | 2017-08-17 | ヘプタゴン・マイクロ・オプティクス・プライベート・リミテッドHeptagon Micro Optics Pte. Ltd. | 縦方向アライメント機構を含む発光体および光検出モジュール |
JP2017201684A (ja) * | 2016-04-28 | 2017-11-09 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN107404063A (zh) * | 2016-05-19 | 2017-11-28 | 日亚化学工业株式会社 | 发光装置及发光装置用封装体 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0454174B1 (en) * | 1990-04-27 | 1997-03-05 | Omron Corporation | Light emitting semiconductor device with Fresnel lens |
JP2008092532A (ja) * | 2006-10-05 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 撮像装置とその製造方法および携帯電話装置 |
CN106568002A (zh) * | 2009-05-28 | 2017-04-19 | 皇家飞利浦电子股份有限公司 | 具有封闭光源的罩的照明设备 |
EP2461378B1 (en) * | 2009-07-30 | 2018-03-21 | Nichia Corporation | Light emitting device and method for manufacturing same |
KR101973395B1 (ko) * | 2012-08-09 | 2019-04-29 | 엘지이노텍 주식회사 | 발광 모듈 |
JP6539950B2 (ja) * | 2014-06-17 | 2019-07-10 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
US9746160B2 (en) * | 2015-07-28 | 2017-08-29 | Nichia Corporation | Light emitting device and method of manufacturing light emitting device |
US10651624B2 (en) * | 2016-01-11 | 2020-05-12 | Ams Sensors Singapore Pte. Ltd. | Optoelectronic modules having features for improved alignment and reduced tilt |
JP6294418B2 (ja) * | 2016-09-01 | 2018-03-14 | 日機装株式会社 | 光半導体装置および光半導体装置の製造方法 |
-
2017
- 2017-11-30 JP JP2017230216A patent/JP6687008B2/ja active Active
-
2018
- 2018-11-28 US US16/203,477 patent/US10608406B2/en active Active
-
2020
- 2020-02-19 US US16/794,476 patent/US10965097B2/en active Active
-
2021
- 2021-02-05 US US17/169,224 patent/US11367994B2/en active Active
Patent Citations (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55162286A (en) * | 1979-05-31 | 1980-12-17 | Philips Nv | Coupling element |
JPS59228615A (ja) * | 1983-06-10 | 1984-12-22 | Ricoh Co Ltd | レンズ組立方法 |
JPS6156685U (ja) * | 1984-09-19 | 1986-04-16 | ||
JPH06151628A (ja) * | 1992-10-30 | 1994-05-31 | Ngk Spark Plug Co Ltd | 半導体素子用セラミック容器 |
JPH10256648A (ja) * | 1997-03-13 | 1998-09-25 | Hitachi Ltd | レーザダイオード・モジュール |
JP2002270944A (ja) * | 2001-03-12 | 2002-09-20 | Kyocera Corp | 光半導体素子収納用パッケージ |
JP2002289958A (ja) * | 2001-03-26 | 2002-10-04 | Kyocera Corp | 光半導体装置 |
JP2004014579A (ja) * | 2002-06-03 | 2004-01-15 | Kyocera Corp | 光半導体素子収納用パッケージ |
JP2004335533A (ja) * | 2003-04-30 | 2004-11-25 | Canon Inc | マルチチップパッケージ |
JP2005093675A (ja) * | 2003-09-17 | 2005-04-07 | Kyocera Corp | 蓋体およびこれを用いた光半導体素子収納用パッケージ |
JP2007157920A (ja) * | 2005-12-02 | 2007-06-21 | Matsushita Electric Ind Co Ltd | レンズキャップの製造方法及びこれに用いるレンズキャップ組立治具 |
WO2011040250A1 (ja) * | 2009-09-29 | 2011-04-07 | コニカミノルタホールディングス株式会社 | アクチュエータ、駆動装置、およびカメラモジュール |
JP2014522086A (ja) * | 2011-08-02 | 2014-08-28 | シカト・インコーポレイテッド | 優先的に照射される色変換面を有するledベース照明モジュール |
WO2013027669A1 (ja) * | 2011-08-22 | 2013-02-28 | 京セラ株式会社 | 光半導体装置 |
JP2014095796A (ja) * | 2012-11-09 | 2014-05-22 | Ricoh Co Ltd | 光偏向装置及び画像投影装置 |
JP2015195330A (ja) * | 2013-08-26 | 2015-11-05 | 京セラ株式会社 | 光学装置用カバー部材および光学装置 |
JP2015118967A (ja) * | 2013-12-17 | 2015-06-25 | 新光電気工業株式会社 | 金属キャップ及び発光装置 |
US20150270682A1 (en) * | 2014-03-24 | 2015-09-24 | Osram Gmbh | Light source arrangement |
JP2017523467A (ja) * | 2014-07-23 | 2017-08-17 | ヘプタゴン・マイクロ・オプティクス・プライベート・リミテッドHeptagon Micro Optics Pte. Ltd. | 縦方向アライメント機構を含む発光体および光検出モジュール |
WO2016042819A1 (ja) * | 2014-09-19 | 2016-03-24 | 京セラ株式会社 | 電子素子実装用基板および電子装置 |
JP2016219779A (ja) * | 2015-05-20 | 2016-12-22 | 日亜化学工業株式会社 | 発光装置 |
JP2017034242A (ja) * | 2015-07-28 | 2017-02-09 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP2017139444A (ja) * | 2016-01-29 | 2017-08-10 | セイコーエプソン株式会社 | 光源装置、光源装置の製造方法およびプロジェクター |
JP2017201684A (ja) * | 2016-04-28 | 2017-11-09 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN107404063A (zh) * | 2016-05-19 | 2017-11-28 | 日亚化学工业株式会社 | 发光装置及发光装置用封装体 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022259889A1 (ja) * | 2021-06-10 | 2022-12-15 | ヌヴォトンテクノロジージャパン株式会社 | 光源装置 |
JP2023067026A (ja) * | 2021-10-29 | 2023-05-16 | 日亜化学工業株式会社 | 発光装置 |
JP7417121B2 (ja) | 2021-10-29 | 2024-01-18 | 日亜化学工業株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
US10965097B2 (en) | 2021-03-30 |
US11367994B2 (en) | 2022-06-21 |
US20190165542A1 (en) | 2019-05-30 |
JP6687008B2 (ja) | 2020-04-22 |
US10608406B2 (en) | 2020-03-31 |
US20210159665A1 (en) | 2021-05-27 |
US20200185881A1 (en) | 2020-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6225976B2 (ja) | 発光装置 | |
JP2019102582A (ja) | 発光装置 | |
JP6504193B2 (ja) | 発光装置 | |
JP6361293B2 (ja) | 半導体レーザ装置 | |
US8897334B2 (en) | Light emitting device | |
JP6705462B2 (ja) | 発光装置 | |
JP6146506B2 (ja) | 半導体レーザ装置及びこの半導体レーザ装置を用いたバックライト装置 | |
JP6737760B2 (ja) | 発光装置及びそれに用いる蓋体 | |
US20210203128A1 (en) | Optical member holding device, semiconductor laser device, method of manufacturing optical member holding device, and method of manufacturing semiconductor laser device | |
JP6168207B2 (ja) | 発光装置及び発光装置の製造方法 | |
JP2023014090A (ja) | 光源装置 | |
JP6724357B2 (ja) | 半導体レーザ装置 | |
JP2018117088A (ja) | 反射部材付基板及びその製造方法 | |
JP7060830B2 (ja) | 発光装置 | |
JP6897830B2 (ja) | 発光装置 | |
JP7288221B2 (ja) | 発光装置 | |
US9746160B2 (en) | Light emitting device and method of manufacturing light emitting device | |
JP2020113718A (ja) | 発光装置およびその製造方法 | |
WO2016203789A1 (ja) | レーザ装置、及び、レーザ装置の製造方法 | |
JP2008004896A (ja) | 半導体レーザ装置およびパッケージ | |
KR102329776B1 (ko) | 금속 벌크를 포함하는 발광 소자 | |
JP2015065293A (ja) | 光学素子実装モジュール、および光学素子実装モジュールの製造方法 | |
JP2020126948A (ja) | 発光装置、パッケージ、及び、基部 | |
JP7506341B2 (ja) | 発光装置 | |
JP7277844B2 (ja) | 発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20180626 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190122 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191225 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200107 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200225 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200303 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200316 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6687008 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |