JP2019009245A - 高効率太陽電池の製造方法 - Google Patents
高効率太陽電池の製造方法 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 42
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- 238000009792 diffusion process Methods 0.000 description 14
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- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- 239000002585 base Substances 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
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- 238000005229 chemical vapour deposition Methods 0.000 description 6
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- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
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- 239000012808 vapor phase Substances 0.000 description 6
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
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- 229910052796 boron Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
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- 229910017604 nitric acid Inorganic materials 0.000 description 4
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
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- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
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- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
【解決手段】シリコン半導体基板にpn接合を形成する工程と、シリコン半導体基板の一方の主表面上に、酸化アルミニウム膜を製膜する工程とを含む太陽電池の製造方法であって、酸化アルミニウム膜を製膜する工程より前に、1立方メートルあたりの水蒸気量が20g以上であり、温度が60℃以上100℃以下の雰囲気でシリコン半導体基板を加熱処理する工程を含む。加熱工程では、ガス供給部2から取り入れられたガスが、加熱部3で加熱され乾燥部4に供給され、乾燥部4には、シリコン半導体基板Wを保持するキャリア5が収納されており、シリコン半導体基板Wとキャリア5に上記洗浄工程で付着した水が乾燥部4に持ち込まれており、シリコン半導体基板Wを加熱乾燥するだけで乾燥部内雰囲気の水蒸気量を増加させることができる。
【選択図】図1
Description
ここでは、N型のシリコン半導体基板を用いる場合を例に具体的な説明を行う。まず、高純度シリコンにリンあるいはヒ素・アンチモンのような5価元素をドープし、比抵抗0.1〜5Ω・cmとしたアズカット単結晶{100}N型シリコン基板をシリコン半導体基板として用意する。単結晶シリコン基板は、CZ法(チョクラルスキー法)、FZ法(浮遊帯域法)いずれの方法によって作製されてもよい。シリコン半導体基板は必ずしも単結晶シリコンである必要はなく、多結晶シリコンでもかまわない。
次に、裏面電極型太陽電池の製造に、本発明の太陽電池の製造方法を用いる場合を説明する。ここでは、N型のシリコン半導体基板を用いる場合を例に具体的な説明を行う。まず、N型シリコン基板を用意し、表面のスライスダメージを高濃度のアルカリ、もしくは、ふっ酸と硝酸の混酸などを用いてエッチングする。単結晶シリコン基板は、CZ法、FZ法いずれの方法によって作製されたものであってもよい。基板は必ずしも単結晶シリコンである必要はなく、多結晶シリコンでもかまわない。
厚さ200μm、比抵抗1Ω・cmの、リンドープ{100}N型アズカットシリコン基板に対し、熱濃水酸化カリウム水溶液によりダメージ層を除去後、72℃の水酸化カリウム/2−プロパノール水溶液中に浸漬しテクスチャ形成を行い、引き続き75℃に加熱した塩酸/過酸化水素混合溶液中で洗浄を行った。
酸化アルミニウム膜の形成前の前処理において、密閉容器内に蒸発させた純水量を1.0gとしたこと以外は、実施例1と同じように裏面電極型太陽電池の作製を行った。容器内の水蒸気量は1立方メートルあたり40gとなった。
酸化アルミニウム膜の形成前の前処理において、密閉容器内に蒸発させた純水量を2.0gとしたこと以外は、実施例1と同じように裏面電極型太陽電池の作製を行った。容器内の水蒸気量は1立方メートルあたり80gとなった。
酸化アルミニウム膜の形成前の前処理において、密閉容器内に蒸発させた純水量を6.5gとしたこと以外は、実施例1と同じように裏面電極型太陽電池の作製を行った。容器内の水蒸気量は1立方メートルあたり260gとなった。
表面ガラス除去、リンス、乾燥まで実施例1と同様に実施した後、特に前処理は行わず、酸化アルミニウム製膜工程以降を実施例1と同様に行った。なお、ガラス除去後の乾燥には、屋内空気をフィルターを通して80℃に加熱したものを、基板に吹き付ける方法で行った(比較例2〜3、実施例1〜4及び実施例5〜8も同じ)。室内温度は約25℃、相対湿度は約50%で制御しているため、乾燥時の1立方メートルあたり水蒸気量は約11.5gと推定される。
酸化アルミニウム膜の形成前の前処理において、ホットプレートの加熱温度を60℃としたこと以外は、実施例1と同じように裏面電極型太陽電池の作製を行った。
酸化アルミニウム膜の形成前の前処理において、ホットプレートの加熱温度を100℃としたこと以外は、実施例1と同じように裏面電極型太陽電池の作製を行った。
酸化アルミニウム膜の形成前の前処理において、ホットプレートの加熱温度を57℃としたこと以外は、実施例1と同じように裏面電極型太陽電池の作製を行った。
酸化アルミニウム膜の形成前の前処理において、1立方メートルあたり水蒸気量を17gとしたこと以外は、実施例1と同じように裏面電極型太陽電池の作製を行った。
表面ガラス除去、リンス、乾燥まで実施例1と同様に実施した後、密閉容器内を窒素で置換しないで(すなわち空気中で)80℃で加熱した。容器内の水蒸気量は1立方メートルあたり20gとした。酸化アルミニウム製膜工程以降は実施例1と同様に行った。
表面ガラス除去、リンスまで実施例1と同様に実施した後、基板を乾燥させずにクリーンオーブンに戴置させ、80℃で15分加熱した。オーブン容積が大きかったため、排気は行わず乾燥させた。オーブン容積675リットルに対し、基板および基板キャリアに付着していた水分17gが完全に乾燥できたことから、オーブン内の水分量は1立方メートルあたり37gであったと推定される。酸化アルミニウム製膜工程以降は実施例1と同様に行った。
以上のようにして得られた太陽電池のサンプルについて、山下電装社製ソーラーシミュレータを用いてAM1.5スペクトル、照射強度100mW/cm2、25℃の条件下で、電流電圧特性を測定し光電変換効率を求めた。得られた結果を下記の表1に示す。
5…キャリア、 6…排気部、 W…シリコン半導体基板。
Claims (3)
- シリコン半導体基板にpn接合を形成する工程と、前記シリコン半導体基板の少なくとも一方の主表面上に、酸化アルミニウム膜を製膜する工程とを含む太陽電池の製造方法であって、
前記酸化アルミニウム膜を製膜する工程より前に、1立方メートルあたりの水蒸気量が20g以上であり、温度が60℃以上100℃以下の雰囲気で前記シリコン半導体基板を加熱処理する工程を含むことを特徴とする太陽電池の製造方法。 - 前記シリコン半導体基板を加熱処理する工程における前記雰囲気は、空気を含むことを特徴とする請求項1に記載の太陽電池の製造方法。
- 前記酸化アルミニウム膜を製膜する工程より前に、前記シリコン半導体基板を洗浄する工程を有し、
前記シリコン半導体基板を加熱処理する工程は、前記シリコン半導体基板を洗浄する工程の後の乾燥工程と同時に行われることを特徴とする請求項1又は請求項2に記載の太陽電池の製造方法。
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