JP6114108B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP6114108B2 JP6114108B2 JP2013105690A JP2013105690A JP6114108B2 JP 6114108 B2 JP6114108 B2 JP 6114108B2 JP 2013105690 A JP2013105690 A JP 2013105690A JP 2013105690 A JP2013105690 A JP 2013105690A JP 6114108 B2 JP6114108 B2 JP 6114108B2
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- solar cell
- substrate
- manufacturing
- oxide film
- diffusion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Description
101・・・バスバー電極
102・・・フィンガー電極
201・・・集電電極
405・・・受光面電極
202、302、402、502・・・反射防止膜
203、303、403、505・・・エミッタ層
205、301、305、406、508、509・・・裏面電極
504・・・シリコン酸化膜
206、306、404、507・・・裏面パッシベーション層
307、506・・・BSF層
308、503・・・FSF層
Claims (4)
- 第一の主表面と第二の主表面を有し少なくとも前記第二の主表面にテクスチャが形成されているシリコン基板を熱処理炉で熱処理してドーパント拡散層形成ならびに酸化膜形成を行う太陽電池の製造方法において、前記熱処理は前記シリコン基板を、第一の主表面を外側にして第二の主表面同士が向かい合う形で2枚ずつ重ね合わせた状態で行い、前記ドーパント拡散層形成を行う工程と前記酸化膜形成を行う工程とが同一の処理室内で連続して行われ、前記ドーパント拡散層形成を行う工程において、キャリアガス中にドーパントを含んだガス雰囲気下で800〜900℃に加熱し、前記酸化膜形成を行う工程において、前記ドーパントガスの導入を止めるとともに前記熱処理炉内を酸素に置換し、900〜1050℃で加熱することを特徴とする太陽電池の製造方法。
- 前記酸化膜の厚みは5〜150nmであることを特徴とする請求項1に記載の太陽電池の製造方法。
- 前記第一の主表面上にドーパント拡散層を形成することを特徴とする請求項1または2に記載の太陽電池の製造方法。
- 前記ドーパント拡散層はN型であることを特徴とする請求項1から3のいずれか1項に記載の太陽電池の製造方法。
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JP2013105690A JP6114108B2 (ja) | 2013-05-20 | 2013-05-20 | 太陽電池の製造方法 |
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JP2013105690A JP6114108B2 (ja) | 2013-05-20 | 2013-05-20 | 太陽電池の製造方法 |
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JP2017050745A Division JP6356855B2 (ja) | 2017-03-16 | 2017-03-16 | 太陽電池の製造方法 |
Publications (2)
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JP2014229640A JP2014229640A (ja) | 2014-12-08 |
JP6114108B2 true JP6114108B2 (ja) | 2017-04-12 |
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JP2013105690A Active JP6114108B2 (ja) | 2013-05-20 | 2013-05-20 | 太陽電池の製造方法 |
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JP (1) | JP6114108B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102272433B1 (ko) | 2015-06-30 | 2021-07-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
CN104993019A (zh) * | 2015-07-09 | 2015-10-21 | 苏州阿特斯阳光电力科技有限公司 | 一种局部背接触太阳能电池的制备方法 |
KR102257824B1 (ko) * | 2016-12-05 | 2021-05-28 | 엘지전자 주식회사 | 태양 전지 제조 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3267491D1 (en) * | 1981-03-02 | 1986-01-02 | Bbc Brown Boveri & Cie | Process for doping semiconductor bodies for the production of semiconductor devices |
JP3326343B2 (ja) * | 1996-12-10 | 2002-09-24 | シャープ株式会社 | 太陽電池セルを製造するための方法と治具 |
US5972784A (en) * | 1997-04-24 | 1999-10-26 | Georgia Tech Research Corporation | Arrangement, dopant source, and method for making solar cells |
NL2000999C2 (nl) * | 2007-11-13 | 2009-05-14 | Stichting Energie | Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor. |
JP5426846B2 (ja) * | 2008-07-16 | 2014-02-26 | 信越化学工業株式会社 | 基板の拡散層形成方法 |
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- 2013-05-20 JP JP2013105690A patent/JP6114108B2/ja active Active
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