JP6258576B2 - 光電素子の製造方法 - Google Patents
光電素子の製造方法 Download PDFInfo
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- JP6258576B2 JP6258576B2 JP2012219627A JP2012219627A JP6258576B2 JP 6258576 B2 JP6258576 B2 JP 6258576B2 JP 2012219627 A JP2012219627 A JP 2012219627A JP 2012219627 A JP2012219627 A JP 2012219627A JP 6258576 B2 JP6258576 B2 JP 6258576B2
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- 238000000034 method Methods 0.000 title claims description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 239000000758 substrate Substances 0.000 claims description 120
- 239000004065 semiconductor Substances 0.000 claims description 119
- 239000000463 material Substances 0.000 claims description 96
- 238000009792 diffusion process Methods 0.000 claims description 63
- 239000002019 doping agent Substances 0.000 claims description 38
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 28
- 230000008021 deposition Effects 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 13
- 239000012159 carrier gas Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000003929 acidic solution Substances 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 186
- 238000005137 deposition process Methods 0.000 description 60
- 230000000052 comparative effect Effects 0.000 description 25
- 238000000151 deposition Methods 0.000 description 23
- 238000005215 recombination Methods 0.000 description 15
- 230000006798 recombination Effects 0.000 description 15
- 239000000969 carrier Substances 0.000 description 12
- 239000011521 glass Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000005360 phosphosilicate glass Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 238000010248 power generation Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000002003 electrode paste Substances 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000005019 vapor deposition process Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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Description
100c、200c コンタクト層
100w、200w ウィンドウ層
110、210 第1電極
115、215 反射防止膜
120、220 第2電極
125、225 背面電界層
200e エミッタ層
Ac コンタクト領域
Aw ウィンドウ領域
L レーザ
M エッチング防止膜
R テクスチュア構造
S1 半導体基板の第1面
S2 半導体基板の第2面
DP1 第1ドーピング物質層
DP2 第2ドーピング物質層
t 第1ドーピング物質層及び第2ドーピング物質層が形成するガラス層の厚み
Claims (14)
- 第1導電型を有する半導体基板に、前記第1導電型と異なる第2導電型を有する第1ドーピング物質層を形成する先蒸着段階と、
前記第1ドーピング物質層が形成された前記半導体基板を加熱する熱拡散段階と、
前記熱拡散段階後、前記第1ドーピング物質層上に、前記第2導電型を有する第2ドーピング物質層を形成する後蒸着段階と、
前記半導体基板、前記第1ドーピング物質層及び前記第2ドーピング物質層の一部をレーザで局所加熱し、前記半導体基板の第1面上にコンタクト層を形成する局所加熱段階と、
前記局所加熱段階後、前記第1ドーピング物質層及び第2ドーピング物質層を除去する段階と、
前記コンタクト層上に第1電極を形成し、前記半導体基板の前記第1面と対向する第2面上に第2電極を形成する段階と、
を含み、
前記後蒸着段階は、前記先蒸着段階よりも工程時間が短く、
前記先蒸着段階は、前記半導体基板が存在する蒸着チャンバ内に、POCl 3 を含む第1ドーピングソースを提供する段階を含み、前記後蒸着段階は、前記蒸着チャンバ内に、POCl 3 を含む第2ドーピングソースを提供する段階を含むことを特徴とする光電素子の製造方法。 - 前記第1ドーピングソースを提供する段階は、第1工程時間の間行われ、
前記第2ドーピングソースを提供する段階は、第2工程時間の間行われ、
前記第1工程時間は、前記第2工程時間より長いことを特徴とする請求項1に記載の光電素子の製造方法。 - 前記第1ドーピングソースを提供する段階では、前記第1ドーピングソースは、キャリアガスを介して供給され、前記第1ドーピングソースは第1濃度を有し、
前記第2ドーピングソースを提供する段階では、前記第2ドーピングソースは、キャリアガスを介して供給され、前記第2ドーピングソースは第2濃度を有し、
前記第2濃度は、前記第1濃度より高いことを特徴とする請求項1又は2に記載の光電素子の製造方法。 - 前記第1ドーピングソースを提供する段階では、
前記第1ドーピングソースは、キャリアガスを介して供給され、前記第1ドーピングソースは5体積%〜7体積%の濃度を有することを特徴とする請求項1〜3のいずれか一項に記載の光電素子の製造方法。 - 前記第1ドーピングソースを提供する段階は、10分〜20分間行われることを特徴とする請求項1〜4のいずれか一項に記載の光電素子の製造方法。
- 前記第2ドーピングソースを提供する段階では、
前記第2ドーピングソースは、キャリアガスを介して供給され、前記第2ドーピングソースは10体積%以上の濃度を有することを特徴とする請求項1〜5のいずれか一項に記載の光電素子の製造方法。 - 前記第2ドーピングソースを提供する段階は、3分〜8分間行われることを特徴とする請求項1〜6のいずれか一項に記載の光電素子の製造方法。
- 前記熱拡散段階は、不活性雰囲気下で、800℃〜900℃で30分〜50分間行われることを特徴とする請求項1〜7のいずれか一項に記載の光電素子の製造方法。
- 前記熱拡散段階では、前記半導体基板の前記第1面にエミッタ層を形成することを特徴とする請求項1〜8のいずれか一項に記載の光電素子の製造方法。
- 前記局所加熱段階では、
前記半導体基板の前記第1面に、前記コンタクト層より低いドーピング濃度を有し、前記コンタクト層と接するウィンドウ層を形成することを特徴とする請求項1〜9のいずれか一項に記載の光電素子の製造方法。 - 前記第1ドーピング物質層及び第2ドーピング物質層を除去する段階では、酸性溶液のエッチャントを利用してエッチングすることを特徴とする請求項1に記載の光電素子の製造方法。
- 前記局所加熱段階後、前記半導体基板上に反射防止膜を形成する段階をさらに含むことを特徴とする請求項1〜11のいずれか一項に記載の光電素子の製造方法。
- 前記半導体基板の前記第2面上に、前記第1導電型を有する背面電界層を形成する段階をさらに含むことを特徴とする請求項1〜12のいずれか一項に記載の光電素子の製造方法。
- 第1導電型の半導体基板に前記第1導電型と異なる第2導電型を有する第1ドーピング物質層を形成する先蒸着段階と、
前記第1ドーピング物質層のドーパントを前記半導体基板に拡散させ、前記半導体基板の第1面にエミッタ層を形成する拡散段階と、
前記拡散段階後、前記第2導電型を有する第2ドーピング物質層を形成する後蒸着段階と、
前記第1ドーピング物質層及び前記第2ドーピング物質層のドーパントを前記エミッタ層に拡散させ、前記半導体基板の前記第1面の一部にコンタクト層を形成する選択的拡散段階と、
前記選択的拡散段階後、前記第1ドーピング物質層及び第2ドーピング物質層を除去する段階と、
を含み、
前記後蒸着段階後、前記第1ドーピング物質層と前記第2ドーピング物質層は、変化する濃度勾配を有し、前記第1ドーピング物質層及び前記第2ドーピング物質層のシリコン酸化物の濃度は、前記半導体基板に近づくほど上昇し、
前記後蒸着段階は、前記先蒸着段階よりも工程時間が短く、
前記先蒸着段階は、前記半導体基板が存在する蒸着チャンバ内に、POCl 3 を含む第1ドーピングソースを提供する段階を含み、前記後蒸着段階は、前記蒸着チャンバ内に、POCl 3 を含む第2ドーピングソースを提供する段階を含むことを特徴とする光電素子の製造方法。
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