CN107993930A - 磷扩散均匀性的修复方法 - Google Patents
磷扩散均匀性的修复方法 Download PDFInfo
- Publication number
- CN107993930A CN107993930A CN201711263983.8A CN201711263983A CN107993930A CN 107993930 A CN107993930 A CN 107993930A CN 201711263983 A CN201711263983 A CN 201711263983A CN 107993930 A CN107993930 A CN 107993930A
- Authority
- CN
- China
- Prior art keywords
- phosphorus diffusion
- time
- deposition
- phosphorus
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 238000009792 diffusion process Methods 0.000 title claims abstract description 50
- 229910052698 phosphorus Inorganic materials 0.000 title claims abstract description 50
- 239000011574 phosphorus Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000008021 deposition Effects 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 10
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 238000004062 sedimentation Methods 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010792 warming Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 17
- 239000013078 crystal Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Secondary Cells (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
Description
项目 | 片内极差均值(%) | 片间极差(%) |
传统磷扩散工艺 | 10.9 | 15.6 |
新磷扩散工艺 | 3.2 | 1.6 |
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711263983.8A CN107993930A (zh) | 2017-12-05 | 2017-12-05 | 磷扩散均匀性的修复方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711263983.8A CN107993930A (zh) | 2017-12-05 | 2017-12-05 | 磷扩散均匀性的修复方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107993930A true CN107993930A (zh) | 2018-05-04 |
Family
ID=62035467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711263983.8A Pending CN107993930A (zh) | 2017-12-05 | 2017-12-05 | 磷扩散均匀性的修复方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107993930A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN118380310A (zh) * | 2024-06-25 | 2024-07-23 | 合肥清电长信光伏科技有限公司 | 一种恒定流量梯度钝化的轻掺扩散工艺 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102487100A (zh) * | 2010-12-02 | 2012-06-06 | 浚鑫科技股份有限公司 | 一种用于太阳能电池的扩散方法 |
CN103050568A (zh) * | 2011-10-13 | 2013-04-17 | 三星Sdi株式会社 | 制造光电器件的方法 |
CN103606596A (zh) * | 2013-11-26 | 2014-02-26 | 英利集团有限公司 | 磷掺杂硅片、其制作方法、太阳能电池片及其制作方法 |
CN104409339A (zh) * | 2014-11-12 | 2015-03-11 | 浙江晶科能源有限公司 | 一种硅片的p扩散方法和太阳能电池的制备方法 |
CN104882516A (zh) * | 2015-05-15 | 2015-09-02 | 广东爱康太阳能科技有限公司 | 一种高温低压的硅片扩散方法 |
CN105185870A (zh) * | 2015-09-17 | 2015-12-23 | 江西展宇新能源股份有限公司 | 一种硅片的磷吸杂扩散工艺 |
CN105280755A (zh) * | 2015-09-17 | 2016-01-27 | 江西展宇新能源股份有限公司 | 三次连续沉积升温扩散工艺 |
-
2017
- 2017-12-05 CN CN201711263983.8A patent/CN107993930A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102487100A (zh) * | 2010-12-02 | 2012-06-06 | 浚鑫科技股份有限公司 | 一种用于太阳能电池的扩散方法 |
CN103050568A (zh) * | 2011-10-13 | 2013-04-17 | 三星Sdi株式会社 | 制造光电器件的方法 |
CN103606596A (zh) * | 2013-11-26 | 2014-02-26 | 英利集团有限公司 | 磷掺杂硅片、其制作方法、太阳能电池片及其制作方法 |
CN104409339A (zh) * | 2014-11-12 | 2015-03-11 | 浙江晶科能源有限公司 | 一种硅片的p扩散方法和太阳能电池的制备方法 |
CN104882516A (zh) * | 2015-05-15 | 2015-09-02 | 广东爱康太阳能科技有限公司 | 一种高温低压的硅片扩散方法 |
CN105185870A (zh) * | 2015-09-17 | 2015-12-23 | 江西展宇新能源股份有限公司 | 一种硅片的磷吸杂扩散工艺 |
CN105280755A (zh) * | 2015-09-17 | 2016-01-27 | 江西展宇新能源股份有限公司 | 三次连续沉积升温扩散工艺 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN118380310A (zh) * | 2024-06-25 | 2024-07-23 | 合肥清电长信光伏科技有限公司 | 一种恒定流量梯度钝化的轻掺扩散工艺 |
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PB01 | Publication | ||
PB01 | Publication | ||
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CB02 | Change of applicant information |
Address after: Room 101, building 1, 58 Xiangjiang Road, Yancheng Economic and Technological Development Zone, Jiangsu Province 224000 Applicant after: Jiangsu Runyang New Energy Technology Co.,Ltd. Address before: 215300, 8 floor, science and Technology Plaza, Qianjin East Road, Kunshan Development Zone, Suzhou, Jiangsu. Applicant before: SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. Address after: Room 101, building 1, 58 Xiangjiang Road, Yancheng Economic and Technological Development Zone, Jiangsu Province 224000 Applicant after: Jiangsu Runyang New Energy Technology Co.,Ltd. Address before: Room 101, building 1, 58 Xiangjiang Road, Yancheng Economic and Technological Development Zone, Jiangsu Province 224000 Applicant before: Jiangsu Runyang New Energy Technology Co.,Ltd. |
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180504 |
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RJ01 | Rejection of invention patent application after publication |