JP6285545B2 - 太陽電池素子および太陽電池モジュール - Google Patents
太陽電池素子および太陽電池モジュール Download PDFInfo
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- JP6285545B2 JP6285545B2 JP2016523463A JP2016523463A JP6285545B2 JP 6285545 B2 JP6285545 B2 JP 6285545B2 JP 2016523463 A JP2016523463 A JP 2016523463A JP 2016523463 A JP2016523463 A JP 2016523463A JP 6285545 B2 JP6285545 B2 JP 6285545B2
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- layer
- solar cell
- silicon substrate
- passivation layer
- electrode
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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Description
<太陽電池素子>
本実施形態に係る太陽電池素子10を図1〜4に示す。太陽電池素子10は、図3に示すように、主に光が入射する受光面である第1主面10aと、この第1主面10aの反対側に位置する一方主面(裏面)である第2主面10bと、側面10cとを有する。また、太陽電池素子10は、半導体基板としてシリコン基板1を備えている。シリコン基板1も第1主面1aと、この第1主面1aの反対側に位置する第2主面1bと、側面1cとを有する。シリコン基板1は、一導電型(例えばp型)半導体領域である第1半導体層2と、第1半導体層2における第1主面1a側に設けられた逆導電型(例えばn型)半導体領域である第2半導体層3とを有する。さらに、太陽電池素子10は、第3半導体層4、反射防止層5、第1電極6、第2電極7、第3電極8、パッシベーション層9および保護層11を備えている。
次に、太陽電池素子10の製造方法の各工程について、詳細に説明する。
次に、本発明をPERC(Passivated Emitter Rear Cell)型の太陽電池素子に適用した第2の実施形態について説明する。第1の実施形態と共通する部分については説明を省略する。
図6および図7に示すように、太陽電池素子10は保護層11の上に第3電極8が形成されている。さらに、パッシベーション層9の上、および保護層11が形成されていない、シリコン基板1の第2主面1bの上にも第3電極8が形成されている。このように、第3電極8はシリコン基板1の第2主面1bの略全面を覆うように形成されている。
第1の実施形態と同様の方法によって、第2半導体層3を備えたシリコン基板1の第2主面1b上にパッシベーション層9を形成し、パッシベーション層9の上に保護層11を形成する。
太陽電池モジュール20は、上述した太陽電池素子10を1つ以上備えている。太陽電池モジュール20は、例えば、互いに電気的に接続されている複数の太陽電池素子10を備えていればよい。このような太陽電池モジュール20は、単独の太陽電池素子10の電気出力が小さな場合に、複数の太陽電池素子10が例えば直列または並列に接続されることで形成される。そして、複数の太陽電池モジュール20が組み合わされることで、実用的な電気出力が取り出される。以下では、太陽電池モジュール20が、複数の太陽電池素子10を備えている一例を挙げて説明する。
図8および図9を用いて具体的な太陽電池モジュール20の製造方法について詳述する。まず、複数の太陽電池素子10を直並列に配置して、隣り合う太陽電池素子10同士を配線導体21によって電気的に接続する。例えば半田を用いた配線導体21の接続方法としては、半田ごて、ホットエアー、レーザーまたはパルスヒート等を用いることができる。このような方法によって、配線導体21は、出力取出電極6aおよび第2電極7に半田付けされる。
1a:第1主面
1b:第2主面
1c:側面
2 :第1半導体層(p型半導体領域)
3 :第2半導体層(n型半導体領域)
4 :第3半導体層
5 :反射防止層
6 :第1電極
6a:出力取出電極
6b:集電電極
7 :第2電極
8 :第3電極
9 :パッシベーション層
9a:第1パッシベーション層
9b:第2パッシベーション層
10 :太陽電池素子
10a:第1主面
10b:第2主面
10c:側面
11 :保護層
20 :太陽電池モジュール
21 :配線導体
22 :出力取出配線
23 :透明部材
24 :表側充填材
25 :裏側充填材
26 :裏側保護材
27 :枠体
28 :端子ボックス
Claims (7)
- 一方主面にp型半導体領域を有するシリコン基板と、
前記p型半導体領域の上に配置された、酸化アルミニウムを含む第1パッシベーション層と、
前記p型半導体領域と前記第1パッシベーション層との間に配置された、酸化シリコンを含む第2パッシベーション層と、
前記第1パッシベーション層の上に配置された、水素および炭素を含有している酸化シリコンを含む保護層と、を備え、
前記第2パッシベーション層の厚みは、前記保護層の厚みよりも小さく、前記第2パッシベーション層および前記保護層の合計の厚みは、前記第1パッシベーション層の厚みよりも小さい、太陽電池素子。 - 前記保護層は窒素をさらに含有している、請求項1に記載の太陽電池素子。
- 前記保護層は、水素濃度が1〜10原子%であり、かつ炭素濃度が1〜10原子%である、請求項1または請求項2に記載の太陽電池素子。
- 前記保護層の厚さが3〜15nmである、請求項1から請求項3のいずれか1つの請求項に記載の太陽電池素子。
- 前記保護層は、酸化シリコン層と、ジルコニウムおよびハフニウムのうち1種以上を含む1層以上の金属酸化物層とが積層された構造を有している、請求項1から請求項4のいずれか1つの請求項に記載の太陽電池素子。
- 前記シリコン基板の前記一方主面の反対側に位置する他方主面にn型半導体領域が配置されており、該n型半導体領域の上に窒化シリコン層が配置されている、請求項1から請求項5のいずれか1つの請求項に記載の太陽電池素子。
- 請求項1から請求項6のいずれか1つの請求項に記載の太陽電池素子を備えている太陽電池モジュール。
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