JP5991945B2 - 太陽電池および太陽電池モジュール - Google Patents
太陽電池および太陽電池モジュール Download PDFInfo
- Publication number
- JP5991945B2 JP5991945B2 JP2013120919A JP2013120919A JP5991945B2 JP 5991945 B2 JP5991945 B2 JP 5991945B2 JP 2013120919 A JP2013120919 A JP 2013120919A JP 2013120919 A JP2013120919 A JP 2013120919A JP 5991945 B2 JP5991945 B2 JP 5991945B2
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- substrate
- receiving surface
- electrode
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 63
- 239000011521 glass Substances 0.000 claims description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 13
- 239000002923 metal particle Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 37
- 239000002585 base Substances 0.000 description 37
- 229910052710 silicon Inorganic materials 0.000 description 35
- 239000010703 silicon Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 30
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 27
- 238000005530 etching Methods 0.000 description 27
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 11
- 239000002253 acid Substances 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 6
- 238000009499 grossing Methods 0.000 description 6
- 239000011259 mixed solution Substances 0.000 description 6
- 239000012670 alkaline solution Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 150000001639 boron compounds Chemical class 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- -1 phosphorus compound Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
150mm角、厚さ250μmおよび比抵抗1Ω・cmのボロンドープ<100>p型アズカットシリコン基板において、熱濃水酸化カリウム水溶液によりダメージ層を除去後、80℃の5%水酸化カリウム水溶液と2−プロパノールの混合溶液中に20分間浸漬し、ランダムピラミッド状のテクスチャを形成し、引き続き塩酸/過酸化水素混合溶液中で洗浄を行った。
150mm角、厚さ250μmおよび比抵抗1Ω・cmのボロンドープ<100>p型アズカットシリコン基板において、熱濃水酸化カリウム水溶液によりダメージ層を除去後、80℃の5%水酸化カリウム水溶液と2−プロパノールの混合溶液中に20分間浸漬し、ランダムピラミッド状のテクスチャを形成し、引き続き塩酸/過酸化水素混合溶液中で洗浄を行った。このときの平均凹凸高低差は約2μmであった。
実施例1と同様にテクスチャ形成と、エミッタおよびベース層を形成した基板に対し、膜厚約100nm窒化シリコン膜をプラズマCVDで受光面と非受光面全面に形成した。さらに受光面と非受光面にAgペーストをスクリーン印刷により塗布し、乾燥の後、ベルト炉で820℃の熱処理により電極を形成した。
実施例1および比較例1と同様にテクスチャを形成した基板に対し、非受光面全面に、エッチングペーストをスクリーン印刷し、170℃で100秒間保持して、テクスチャをエッチング除去した後、純水でリンス洗浄した。
102、202、302、402・・・テクスチャ
103、203、303、403・・・エミッタ層
305、405・・・凹凸構造
104、204、207、306、307、406、407・・・保護膜
105、107、205,208、308、309、408、409・・・電極
106、206、304、404・・・ベース層
Claims (4)
- 第1の導電型を有する結晶シリコン基板と、
前記結晶シリコン基板に形成される第2の導電型を有するエミッタ層と、
前記結晶シリコン基板に形成される第1の導電型を有するベース層と
を備え、
前記基板に入射した光により励起された電荷を外部に取り出す電極が前記エミッタ層と前記ベース層にそれぞれ形成された太陽電池であって、前記基板における前記電極が形成される領域の少なくとも一部に、複数の凹凸を有する凹凸構造が具備されており、
前記電極の少なくとも一つは前記基板の非受光面に形成され、
前記非受光面は、前記電極が形成される領域を除く少なくとも一部の領域が、前記凹凸構造よりも平滑化されていることを特徴とする太陽電池。 - 前記凹凸構造における凹部と凸部の高低差が、0.5μm以上であることを特徴とする請求項1に記載の太陽電池。
- 前記電極が、金属粒子とガラスの焼結体であることを特徴とする請求項1または2に記載の太陽電池。
- 請求項1から3のいずれか1項に記載の太陽電池を電気的に接続して成る太陽電池モジュール。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013120919A JP5991945B2 (ja) | 2013-06-07 | 2013-06-07 | 太陽電池および太陽電池モジュール |
PCT/JP2014/059091 WO2014196247A1 (ja) | 2013-06-07 | 2014-03-28 | 太陽電池および太陽電池モジュール |
TW103119545A TWI611589B (zh) | 2013-06-07 | 2014-06-05 | 太陽電池及太陽電池模組 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013120919A JP5991945B2 (ja) | 2013-06-07 | 2013-06-07 | 太陽電池および太陽電池モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014239150A JP2014239150A (ja) | 2014-12-18 |
JP5991945B2 true JP5991945B2 (ja) | 2016-09-14 |
Family
ID=52007902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013120919A Active JP5991945B2 (ja) | 2013-06-07 | 2013-06-07 | 太陽電池および太陽電池モジュール |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5991945B2 (ja) |
TW (1) | TWI611589B (ja) |
WO (1) | WO2014196247A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11621359B1 (en) | 2022-04-11 | 2023-04-04 | Zhejiang Jinko Solar Co., Ltd. | Solar cell, photovoltaic module, and method for preparing the solar cell |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6832615B2 (ja) * | 2015-02-05 | 2021-02-24 | シャープ株式会社 | 光電変換素子および光電変換素子の製造方法 |
JP6494414B2 (ja) * | 2015-05-18 | 2019-04-03 | 信越化学工業株式会社 | 太陽電池セルの製造方法 |
JP6392717B2 (ja) * | 2015-09-02 | 2018-09-19 | 信越化学工業株式会社 | 太陽電池セルの製造方法 |
WO2017195722A1 (ja) * | 2016-05-09 | 2017-11-16 | 株式会社カネカ | 積層型光電変換装置およびその製造方法 |
CN110896118A (zh) * | 2018-09-12 | 2020-03-20 | 福建金石能源有限公司 | 一种背接触异质结太阳能电池制作方法 |
CN116722049A (zh) | 2022-04-11 | 2023-09-08 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、光伏组件 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004281758A (ja) * | 2003-03-17 | 2004-10-07 | Sharp Corp | 太陽電池およびその製造方法 |
JP5121203B2 (ja) * | 2006-09-29 | 2013-01-16 | 三洋電機株式会社 | 太陽電池モジュール |
JP5633284B2 (ja) * | 2010-01-25 | 2014-12-03 | 日立化成株式会社 | 電極用ペースト組成物および太陽電池 |
JP5850388B2 (ja) * | 2010-08-26 | 2016-02-03 | 日本電気硝子株式会社 | 電極形成用ガラス及びこれを用いた電極形成材料 |
JP5715509B2 (ja) * | 2011-06-22 | 2015-05-07 | シャープ株式会社 | 太陽電池、及び太陽電池の製造方法 |
WO2013073045A1 (ja) * | 2011-11-18 | 2013-05-23 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
-
2013
- 2013-06-07 JP JP2013120919A patent/JP5991945B2/ja active Active
-
2014
- 2014-03-28 WO PCT/JP2014/059091 patent/WO2014196247A1/ja active Application Filing
- 2014-06-05 TW TW103119545A patent/TWI611589B/zh active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11621359B1 (en) | 2022-04-11 | 2023-04-04 | Zhejiang Jinko Solar Co., Ltd. | Solar cell, photovoltaic module, and method for preparing the solar cell |
EP4261895A1 (en) * | 2022-04-11 | 2023-10-18 | Zhejiang Jinko Solar Co., Ltd. | Solar cell, photovoltaic module, and method for preparing the solar cell |
US11862741B2 (en) | 2022-04-11 | 2024-01-02 | Zhejiang Jinko Solar Co., Ltd. | Solar cell, photovoltaic module, and method for preparing the solar cell |
EP4345917A3 (en) * | 2022-04-11 | 2024-06-26 | Zhejiang Jinko Solar Co., Ltd. | Solar cell, photovoltaic module, and method for preparing the solar cell |
Also Published As
Publication number | Publication date |
---|---|
JP2014239150A (ja) | 2014-12-18 |
TWI611589B (zh) | 2018-01-11 |
TW201515244A (zh) | 2015-04-16 |
WO2014196247A1 (ja) | 2014-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5991945B2 (ja) | 太陽電池および太陽電池モジュール | |
EP2650926B1 (en) | Solar cell and method of making a solar cell | |
JP5440433B2 (ja) | 太陽電池の製造方法及び製膜装置 | |
JP5490231B2 (ja) | 太陽電池素子およびその製造方法ならびに太陽電池モジュール | |
JP5737204B2 (ja) | 太陽電池及びその製造方法 | |
JP2008034543A (ja) | 光電変換素子およびその製造方法 | |
JP2013165160A (ja) | 太陽電池の製造方法及び太陽電池 | |
JP5338702B2 (ja) | 太陽電池の製造方法 | |
WO2013100085A1 (ja) | 太陽電池素子、太陽電池素子の製造方法および太陽電池モジュール | |
JP6426486B2 (ja) | 太陽電池素子の製造方法 | |
TWI650872B (zh) | 太陽能電池及其製造方法、太陽能電池模組及太陽能電池發電系統 | |
JP2005136081A (ja) | 太陽電池の製造方法 | |
JP5623131B2 (ja) | 太陽電池素子およびその製造方法ならびに太陽電池モジュール | |
JP2011066044A (ja) | 太陽電池素子の製造方法 | |
JP6114205B2 (ja) | 太陽電池の製造方法 | |
JP2003273382A (ja) | 太陽電池素子 | |
JP2004281569A (ja) | 太陽電池素子の製造方法 | |
JP4646584B2 (ja) | 太陽電池の製造方法 | |
JP6741626B2 (ja) | 高効率裏面電極型太陽電池及びその製造方法 | |
JP5316491B2 (ja) | 太陽電池の製造方法 | |
JP2011243726A (ja) | 太陽電池の製造方法 | |
JP5715509B2 (ja) | 太陽電池、及び太陽電池の製造方法 | |
WO2016072048A1 (ja) | 太陽電池及びその製造方法 | |
JP5994895B2 (ja) | 太陽電池の製造方法 | |
KR20120085067A (ko) | 태양전지 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150625 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160531 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160627 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160809 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160816 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5991945 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |