JP2018526230A5 - - Google Patents

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Publication number
JP2018526230A5
JP2018526230A5 JP2017563925A JP2017563925A JP2018526230A5 JP 2018526230 A5 JP2018526230 A5 JP 2018526230A5 JP 2017563925 A JP2017563925 A JP 2017563925A JP 2017563925 A JP2017563925 A JP 2017563925A JP 2018526230 A5 JP2018526230 A5 JP 2018526230A5
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JP
Japan
Prior art keywords
multilayer structure
layer
mask
single crystal
evaporation temperature
Prior art date
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JP2017563925A
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English (en)
Japanese (ja)
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JP2018526230A (ja
JP6772192B2 (ja
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Priority claimed from FR1555283A external-priority patent/FR3037341A1/fr
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Publication of JP2018526230A publication Critical patent/JP2018526230A/ja
Publication of JP2018526230A5 publication Critical patent/JP2018526230A5/ja
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Publication of JP6772192B2 publication Critical patent/JP6772192B2/ja
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JP2017563925A 2015-06-10 2016-06-03 ナノ構造体を製造する方法 Active JP6772192B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1555283A FR3037341A1 (fr) 2015-06-10 2015-06-10 Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures
FR1555283 2015-06-10
PCT/EP2016/062721 WO2016198341A1 (fr) 2015-06-10 2016-06-03 Procede de fabrication de nanostructures

Publications (3)

Publication Number Publication Date
JP2018526230A JP2018526230A (ja) 2018-09-13
JP2018526230A5 true JP2018526230A5 (enExample) 2019-07-04
JP6772192B2 JP6772192B2 (ja) 2020-10-21

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ID=54366290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017563925A Active JP6772192B2 (ja) 2015-06-10 2016-06-03 ナノ構造体を製造する方法

Country Status (7)

Country Link
US (1) US11085130B2 (enExample)
EP (1) EP3307927A1 (enExample)
JP (1) JP6772192B2 (enExample)
KR (1) KR20180017124A (enExample)
CN (1) CN107849735A (enExample)
FR (1) FR3037341A1 (enExample)
WO (1) WO2016198341A1 (enExample)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0302732B1 (en) * 1987-08-04 1993-10-13 Sharp Kabushiki Kaisha A semiconductor laser device
JP3635683B2 (ja) * 1993-10-28 2005-04-06 ソニー株式会社 電界効果トランジスタ
TW239894B (en) * 1994-07-02 1995-02-01 Nat Science Committee Quantum dot structure
US5482890A (en) * 1994-10-14 1996-01-09 National Science Council Method of fabricating quantum dot structures
US20070257264A1 (en) 2005-11-10 2007-11-08 Hersee Stephen D CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS
US20080073743A1 (en) * 2006-02-17 2008-03-27 Lockheed Martin Corporation Templated growth of semiconductor nanostructures, related devices and methods
CA2643439C (en) 2006-03-10 2015-09-08 Stc.Unm Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices
CN101443887B (zh) * 2006-03-10 2011-04-20 Stc.Unm公司 Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件
JP4986138B2 (ja) * 2006-11-15 2012-07-25 独立行政法人産業技術総合研究所 反射防止構造を有する光学素子用成形型の製造方法
JP5152715B2 (ja) * 2007-09-22 2013-02-27 学校法人関西学院 三次元微細加工方法及び三次元微細構造
US7745315B1 (en) * 2007-10-03 2010-06-29 Sandia Corporation Highly aligned vertical GaN nanowires using submonolayer metal catalysts
JP5267945B2 (ja) * 2009-03-31 2013-08-21 学校法人関西学院 三次元微細加工方法及び三次元微細構造
US8211735B2 (en) * 2009-06-08 2012-07-03 International Business Machines Corporation Nano/microwire solar cell fabricated by nano/microsphere lithography
JP5688928B2 (ja) 2010-07-29 2015-03-25 アキレス株式会社 防水靴用防水インナー
US8685858B2 (en) * 2011-08-30 2014-04-01 International Business Machines Corporation Formation of metal nanospheres and microspheres
JP5688780B2 (ja) * 2013-05-07 2015-03-25 学校法人関西学院 ＳｉＣ基板、炭素供給フィード基板及び炭素ナノ材料付きＳｉＣ基板

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