JP6772192B2 - ナノ構造体を製造する方法 - Google Patents

ナノ構造体を製造する方法 Download PDF

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JP6772192B2
JP6772192B2 JP2017563925A JP2017563925A JP6772192B2 JP 6772192 B2 JP6772192 B2 JP 6772192B2 JP 2017563925 A JP2017563925 A JP 2017563925A JP 2017563925 A JP2017563925 A JP 2017563925A JP 6772192 B2 JP6772192 B2 JP 6772192B2
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multilayer structure
layer
mask
single crystal
evaporation
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Japanese (ja)
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JP2018526230A5 (enExample
JP2018526230A (ja
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ブジアン，ステファーヌ
ダミラノ，バンジャマン
ブロー，ジュリアン
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Centre National de la Recherche Scientifique CNRS
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Centre National de la Recherche Scientifique CNRS
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2017563925A 2015-06-10 2016-06-03 ナノ構造体を製造する方法 Active JP6772192B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1555283A FR3037341A1 (fr) 2015-06-10 2015-06-10 Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures
FR1555283 2015-06-10
PCT/EP2016/062721 WO2016198341A1 (fr) 2015-06-10 2016-06-03 Procede de fabrication de nanostructures

Publications (3)

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JP2018526230A JP2018526230A (ja) 2018-09-13
JP2018526230A5 JP2018526230A5 (enExample) 2019-07-04
JP6772192B2 true JP6772192B2 (ja) 2020-10-21

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JP2017563925A Active JP6772192B2 (ja) 2015-06-10 2016-06-03 ナノ構造体を製造する方法

Country Status (7)

Country Link
US (1) US11085130B2 (enExample)
EP (1) EP3307927A1 (enExample)
JP (1) JP6772192B2 (enExample)
KR (1) KR20180017124A (enExample)
CN (1) CN107849735A (enExample)
FR (1) FR3037341A1 (enExample)
WO (1) WO2016198341A1 (enExample)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0302732B1 (en) * 1987-08-04 1993-10-13 Sharp Kabushiki Kaisha A semiconductor laser device
JP3635683B2 (ja) * 1993-10-28 2005-04-06 ソニー株式会社 電界効果トランジスタ
TW239894B (en) * 1994-07-02 1995-02-01 Nat Science Committee Quantum dot structure
US5482890A (en) * 1994-10-14 1996-01-09 National Science Council Method of fabricating quantum dot structures
US20070257264A1 (en) 2005-11-10 2007-11-08 Hersee Stephen D CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS
US20080073743A1 (en) * 2006-02-17 2008-03-27 Lockheed Martin Corporation Templated growth of semiconductor nanostructures, related devices and methods
CA2643439C (en) 2006-03-10 2015-09-08 Stc.Unm Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices
CN101443887B (zh) * 2006-03-10 2011-04-20 Stc.Unm公司 Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件
JP4986138B2 (ja) * 2006-11-15 2012-07-25 独立行政法人産業技術総合研究所 反射防止構造を有する光学素子用成形型の製造方法
JP5152715B2 (ja) * 2007-09-22 2013-02-27 学校法人関西学院 三次元微細加工方法及び三次元微細構造
US7745315B1 (en) * 2007-10-03 2010-06-29 Sandia Corporation Highly aligned vertical GaN nanowires using submonolayer metal catalysts
JP5267945B2 (ja) * 2009-03-31 2013-08-21 学校法人関西学院 三次元微細加工方法及び三次元微細構造
US8211735B2 (en) * 2009-06-08 2012-07-03 International Business Machines Corporation Nano/microwire solar cell fabricated by nano/microsphere lithography
JP5688928B2 (ja) 2010-07-29 2015-03-25 アキレス株式会社 防水靴用防水インナー
US8685858B2 (en) * 2011-08-30 2014-04-01 International Business Machines Corporation Formation of metal nanospheres and microspheres
JP5688780B2 (ja) * 2013-05-07 2015-03-25 学校法人関西学院 ＳｉＣ基板、炭素供給フィード基板及び炭素ナノ材料付きＳｉＣ基板

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Publication number Publication date
FR3037341A1 (fr) 2016-12-16
US20180327929A1 (en) 2018-11-15
US11085130B2 (en) 2021-08-10
KR20180017124A (ko) 2018-02-20
JP2018526230A (ja) 2018-09-13
WO2016198341A1 (fr) 2016-12-15
CN107849735A (zh) 2018-03-27
EP3307927A1 (fr) 2018-04-18

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