FR3037341A1 - Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures - Google Patents

Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures Download PDF

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Publication number
FR3037341A1
FR3037341A1 FR1555283A FR1555283A FR3037341A1 FR 3037341 A1 FR3037341 A1 FR 3037341A1 FR 1555283 A FR1555283 A FR 1555283A FR 1555283 A FR1555283 A FR 1555283A FR 3037341 A1 FR3037341 A1 FR 3037341A1
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FR
France
Prior art keywords
layer
multilayer
mask
monocrystalline
new
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR1555283A
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English (en)
French (fr)
Inventor
Stephane Vezian
Benjamin Damilano
Julien Brault
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique
Original Assignee
Centre National de la Recherche Scientifique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique filed Critical Centre National de la Recherche Scientifique
Priority to FR1555283A priority Critical patent/FR3037341A1/fr
Priority to CN201680043103.3A priority patent/CN107849735A/zh
Priority to JP2017563925A priority patent/JP6772192B2/ja
Priority to KR1020187000777A priority patent/KR20180017124A/ko
Priority to US15/579,910 priority patent/US11085130B2/en
Priority to EP16729826.4A priority patent/EP3307927A1/fr
Priority to PCT/EP2016/062721 priority patent/WO2016198341A1/fr
Publication of FR3037341A1 publication Critical patent/FR3037341A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
FR1555283A 2015-06-10 2015-06-10 Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures Withdrawn FR3037341A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1555283A FR3037341A1 (fr) 2015-06-10 2015-06-10 Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures
CN201680043103.3A CN107849735A (zh) 2015-06-10 2016-06-03 用于制造纳米结构的方法
JP2017563925A JP6772192B2 (ja) 2015-06-10 2016-06-03 ナノ構造体を製造する方法
KR1020187000777A KR20180017124A (ko) 2015-06-10 2016-06-03 나조구조들을 제조하기 위한 방법
US15/579,910 US11085130B2 (en) 2015-06-10 2016-06-03 Method for producing nanostructures
EP16729826.4A EP3307927A1 (fr) 2015-06-10 2016-06-03 Procede de fabrication de nanostructures
PCT/EP2016/062721 WO2016198341A1 (fr) 2015-06-10 2016-06-03 Procede de fabrication de nanostructures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1555283A FR3037341A1 (fr) 2015-06-10 2015-06-10 Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures

Publications (1)

Publication Number Publication Date
FR3037341A1 true FR3037341A1 (fr) 2016-12-16

Family

ID=54366290

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1555283A Withdrawn FR3037341A1 (fr) 2015-06-10 2015-06-10 Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures

Country Status (7)

Country Link
US (1) US11085130B2 (enExample)
EP (1) EP3307927A1 (enExample)
JP (1) JP6772192B2 (enExample)
KR (1) KR20180017124A (enExample)
CN (1) CN107849735A (enExample)
FR (1) FR3037341A1 (enExample)
WO (1) WO2016198341A1 (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080036038A1 (en) * 2006-03-10 2008-02-14 Hersee Stephen D PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL
US20100221866A1 (en) * 2009-06-08 2010-09-02 International Business Machines Corporation Nano/Microwire Solar Cell Fabricated by Nano/Microsphere Lithography

Family Cites Families (14)

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DE3884881T2 (de) * 1987-08-04 1994-02-10 Sharp Kk Halbleiterlaservorrichtung.
JP3635683B2 (ja) * 1993-10-28 2005-04-06 ソニー株式会社 電界効果トランジスタ
TW239894B (en) * 1994-07-02 1995-02-01 Nat Science Committee Quantum dot structure
US5482890A (en) * 1994-10-14 1996-01-09 National Science Council Method of fabricating quantum dot structures
US20070257264A1 (en) * 2005-11-10 2007-11-08 Hersee Stephen D CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS
US20080073743A1 (en) * 2006-02-17 2008-03-27 Lockheed Martin Corporation Templated growth of semiconductor nanostructures, related devices and methods
CN101443887B (zh) 2006-03-10 2011-04-20 Stc.Unm公司 Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件
JP4986138B2 (ja) * 2006-11-15 2012-07-25 独立行政法人産業技術総合研究所 反射防止構造を有する光学素子用成形型の製造方法
JP5152715B2 (ja) 2007-09-22 2013-02-27 学校法人関西学院 三次元微細加工方法及び三次元微細構造
US7745315B1 (en) * 2007-10-03 2010-06-29 Sandia Corporation Highly aligned vertical GaN nanowires using submonolayer metal catalysts
JP5267945B2 (ja) 2009-03-31 2013-08-21 学校法人関西学院 三次元微細加工方法及び三次元微細構造
JP5688928B2 (ja) 2010-07-29 2015-03-25 アキレス株式会社 防水靴用防水インナー
US8685858B2 (en) 2011-08-30 2014-04-01 International Business Machines Corporation Formation of metal nanospheres and microspheres
JP5688780B2 (ja) 2013-05-07 2015-03-25 学校法人関西学院 ＳｉＣ基板、炭素供給フィード基板及び炭素ナノ材料付きＳｉＣ基板

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080036038A1 (en) * 2006-03-10 2008-02-14 Hersee Stephen D PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL
US20100221866A1 (en) * 2009-06-08 2010-09-02 International Business Machines Corporation Nano/Microwire Solar Cell Fabricated by Nano/Microsphere Lithography

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KAZUMA KURIHARA ET AL: "High-speed optical nanofabrication by platinum oxide nano-explosion", JOURNAL OF OPTICS. A, PURE AND APPLIED OPTICS, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 8, no. 4, 1 April 2006 (2006-04-01), pages S139 - S143, XP020108429, ISSN: 1464-4258, DOI: 10.1088/1464-4258/8/4/S13 *

Also Published As

Publication number Publication date
US11085130B2 (en) 2021-08-10
WO2016198341A1 (fr) 2016-12-15
JP6772192B2 (ja) 2020-10-21
EP3307927A1 (fr) 2018-04-18
KR20180017124A (ko) 2018-02-20
JP2018526230A (ja) 2018-09-13
US20180327929A1 (en) 2018-11-15
CN107849735A (zh) 2018-03-27

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