FR3037341A1 - Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures - Google Patents
Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures Download PDFInfo
- Publication number
- FR3037341A1 FR3037341A1 FR1555283A FR1555283A FR3037341A1 FR 3037341 A1 FR3037341 A1 FR 3037341A1 FR 1555283 A FR1555283 A FR 1555283A FR 1555283 A FR1555283 A FR 1555283A FR 3037341 A1 FR3037341 A1 FR 3037341A1
- Authority
- FR
- France
- Prior art keywords
- layer
- multilayer
- mask
- monocrystalline
- new
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000001704 evaporation Methods 0.000 claims abstract description 41
- 230000008020 evaporation Effects 0.000 claims abstract description 40
- 238000005530 etching Methods 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000002070 nanowire Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 21
- 239000011159 matrix material Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 10
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 238000011084 recovery Methods 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 19
- 229910002601 GaN Inorganic materials 0.000 description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 229910052733 gallium Inorganic materials 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000011109 contamination Methods 0.000 description 7
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 7
- 238000013459 approach Methods 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004627 transmission electron microscopy Methods 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Laminated Bodies (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1555283A FR3037341A1 (fr) | 2015-06-10 | 2015-06-10 | Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures |
| CN201680043103.3A CN107849735A (zh) | 2015-06-10 | 2016-06-03 | 用于制造纳米结构的方法 |
| EP16729826.4A EP3307927A1 (fr) | 2015-06-10 | 2016-06-03 | Procede de fabrication de nanostructures |
| PCT/EP2016/062721 WO2016198341A1 (fr) | 2015-06-10 | 2016-06-03 | Procede de fabrication de nanostructures |
| JP2017563925A JP6772192B2 (ja) | 2015-06-10 | 2016-06-03 | ナノ構造体を製造する方法 |
| US15/579,910 US11085130B2 (en) | 2015-06-10 | 2016-06-03 | Method for producing nanostructures |
| KR1020187000777A KR20180017124A (ko) | 2015-06-10 | 2016-06-03 | 나조구조들을 제조하기 위한 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1555283A FR3037341A1 (fr) | 2015-06-10 | 2015-06-10 | Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR3037341A1 true FR3037341A1 (fr) | 2016-12-16 |
Family
ID=54366290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1555283A Withdrawn FR3037341A1 (fr) | 2015-06-10 | 2015-06-10 | Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11085130B2 (enExample) |
| EP (1) | EP3307927A1 (enExample) |
| JP (1) | JP6772192B2 (enExample) |
| KR (1) | KR20180017124A (enExample) |
| CN (1) | CN107849735A (enExample) |
| FR (1) | FR3037341A1 (enExample) |
| WO (1) | WO2016198341A1 (enExample) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080036038A1 (en) * | 2006-03-10 | 2008-02-14 | Hersee Stephen D | PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL |
| US20100221866A1 (en) * | 2009-06-08 | 2010-09-02 | International Business Machines Corporation | Nano/Microwire Solar Cell Fabricated by Nano/Microsphere Lithography |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0302732B1 (en) * | 1987-08-04 | 1993-10-13 | Sharp Kabushiki Kaisha | A semiconductor laser device |
| JP3635683B2 (ja) * | 1993-10-28 | 2005-04-06 | ソニー株式会社 | 電界効果トランジスタ |
| TW239894B (en) * | 1994-07-02 | 1995-02-01 | Nat Science Committee | Quantum dot structure |
| US5482890A (en) * | 1994-10-14 | 1996-01-09 | National Science Council | Method of fabricating quantum dot structures |
| US20070257264A1 (en) | 2005-11-10 | 2007-11-08 | Hersee Stephen D | CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS |
| US20080073743A1 (en) * | 2006-02-17 | 2008-03-27 | Lockheed Martin Corporation | Templated growth of semiconductor nanostructures, related devices and methods |
| CN101443887B (zh) * | 2006-03-10 | 2011-04-20 | Stc.Unm公司 | Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件 |
| JP4986138B2 (ja) * | 2006-11-15 | 2012-07-25 | 独立行政法人産業技術総合研究所 | 反射防止構造を有する光学素子用成形型の製造方法 |
| JP5152715B2 (ja) * | 2007-09-22 | 2013-02-27 | 学校法人関西学院 | 三次元微細加工方法及び三次元微細構造 |
| US7745315B1 (en) * | 2007-10-03 | 2010-06-29 | Sandia Corporation | Highly aligned vertical GaN nanowires using submonolayer metal catalysts |
| JP5267945B2 (ja) * | 2009-03-31 | 2013-08-21 | 学校法人関西学院 | 三次元微細加工方法及び三次元微細構造 |
| JP5688928B2 (ja) | 2010-07-29 | 2015-03-25 | アキレス株式会社 | 防水靴用防水インナー |
| US8685858B2 (en) * | 2011-08-30 | 2014-04-01 | International Business Machines Corporation | Formation of metal nanospheres and microspheres |
| JP5688780B2 (ja) * | 2013-05-07 | 2015-03-25 | 学校法人関西学院 | ＳｉＣ基板、炭素供給フィード基板及び炭素ナノ材料付きＳｉＣ基板 |
-
2015
- 2015-06-10 FR FR1555283A patent/FR3037341A1/fr not_active Withdrawn
-
2016
- 2016-06-03 JP JP2017563925A patent/JP6772192B2/ja active Active
- 2016-06-03 CN CN201680043103.3A patent/CN107849735A/zh active Pending
- 2016-06-03 EP EP16729826.4A patent/EP3307927A1/fr active Pending
- 2016-06-03 WO PCT/EP2016/062721 patent/WO2016198341A1/fr not_active Ceased
- 2016-06-03 US US15/579,910 patent/US11085130B2/en active Active
- 2016-06-03 KR KR1020187000777A patent/KR20180017124A/ko not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080036038A1 (en) * | 2006-03-10 | 2008-02-14 | Hersee Stephen D | PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL |
| US20100221866A1 (en) * | 2009-06-08 | 2010-09-02 | International Business Machines Corporation | Nano/Microwire Solar Cell Fabricated by Nano/Microsphere Lithography |
Non-Patent Citations (1)
| Title |
|---|
| KAZUMA KURIHARA ET AL: "High-speed optical nanofabrication by platinum oxide nano-explosion", JOURNAL OF OPTICS. A, PURE AND APPLIED OPTICS, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 8, no. 4, 1 April 2006 (2006-04-01), pages S139 - S143, XP020108429, ISSN: 1464-4258, DOI: 10.1088/1464-4258/8/4/S13 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US20180327929A1 (en) | 2018-11-15 |
| US11085130B2 (en) | 2021-08-10 |
| KR20180017124A (ko) | 2018-02-20 |
| JP2018526230A (ja) | 2018-09-13 |
| WO2016198341A1 (fr) | 2016-12-15 |
| CN107849735A (zh) | 2018-03-27 |
| JP6772192B2 (ja) | 2020-10-21 |
| EP3307927A1 (fr) | 2018-04-18 |
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Effective date: 20240205 |