KR20180017124A - 나조구조들을 제조하기 위한 방법 - Google Patents

나조구조들을 제조하기 위한 방법 Download PDF

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Publication number
KR20180017124A
KR20180017124A KR1020187000777A KR20187000777A KR20180017124A KR 20180017124 A KR20180017124 A KR 20180017124A KR 1020187000777 A KR1020187000777 A KR 1020187000777A KR 20187000777 A KR20187000777 A KR 20187000777A KR 20180017124 A KR20180017124 A KR 20180017124A
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South Korea
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mask
nanostructures
multilayer structure
new
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KR1020187000777A
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English (en)
Korean (ko)
Inventor
스테빤 베지앙
벤자맹 다밀라노
줄리앙 브롤
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상뜨르 나쇼날 드 라 러쉐르쉬 샹띠피끄
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Publication of KR20180017124A publication Critical patent/KR20180017124A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020187000777A 2015-06-10 2016-06-03 나조구조들을 제조하기 위한 방법 Ceased KR20180017124A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1555283A FR3037341A1 (fr) 2015-06-10 2015-06-10 Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures
FR1555283 2015-06-10
PCT/EP2016/062721 WO2016198341A1 (fr) 2015-06-10 2016-06-03 Procede de fabrication de nanostructures

Publications (1)

Publication Number Publication Date
KR20180017124A true KR20180017124A (ko) 2018-02-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187000777A Ceased KR20180017124A (ko) 2015-06-10 2016-06-03 나조구조들을 제조하기 위한 방법

Country Status (7)

Country Link
US (1) US11085130B2 (enExample)
EP (1) EP3307927A1 (enExample)
JP (1) JP6772192B2 (enExample)
KR (1) KR20180017124A (enExample)
CN (1) CN107849735A (enExample)
FR (1) FR3037341A1 (enExample)
WO (1) WO2016198341A1 (enExample)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0302732B1 (en) * 1987-08-04 1993-10-13 Sharp Kabushiki Kaisha A semiconductor laser device
JP3635683B2 (ja) * 1993-10-28 2005-04-06 ソニー株式会社 電界効果トランジスタ
TW239894B (en) * 1994-07-02 1995-02-01 Nat Science Committee Quantum dot structure
US5482890A (en) * 1994-10-14 1996-01-09 National Science Council Method of fabricating quantum dot structures
US20070257264A1 (en) 2005-11-10 2007-11-08 Hersee Stephen D CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS
US20080073743A1 (en) * 2006-02-17 2008-03-27 Lockheed Martin Corporation Templated growth of semiconductor nanostructures, related devices and methods
CA2643439C (en) 2006-03-10 2015-09-08 Stc.Unm Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices
CN101443887B (zh) * 2006-03-10 2011-04-20 Stc.Unm公司 Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件
JP4986138B2 (ja) * 2006-11-15 2012-07-25 独立行政法人産業技術総合研究所 反射防止構造を有する光学素子用成形型の製造方法
JP5152715B2 (ja) * 2007-09-22 2013-02-27 学校法人関西学院 三次元微細加工方法及び三次元微細構造
US7745315B1 (en) * 2007-10-03 2010-06-29 Sandia Corporation Highly aligned vertical GaN nanowires using submonolayer metal catalysts
JP5267945B2 (ja) * 2009-03-31 2013-08-21 学校法人関西学院 三次元微細加工方法及び三次元微細構造
US8211735B2 (en) * 2009-06-08 2012-07-03 International Business Machines Corporation Nano/microwire solar cell fabricated by nano/microsphere lithography
JP5688928B2 (ja) 2010-07-29 2015-03-25 アキレス株式会社 防水靴用防水インナー
US8685858B2 (en) * 2011-08-30 2014-04-01 International Business Machines Corporation Formation of metal nanospheres and microspheres
JP5688780B2 (ja) * 2013-05-07 2015-03-25 学校法人関西学院 ＳｉＣ基板、炭素供給フィード基板及び炭素ナノ材料付きＳｉＣ基板

Also Published As

Publication number Publication date
FR3037341A1 (fr) 2016-12-16
US20180327929A1 (en) 2018-11-15
US11085130B2 (en) 2021-08-10
JP2018526230A (ja) 2018-09-13
WO2016198341A1 (fr) 2016-12-15
CN107849735A (zh) 2018-03-27
JP6772192B2 (ja) 2020-10-21
EP3307927A1 (fr) 2018-04-18

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