CN107849735A - 用于制造纳米结构的方法 - Google Patents
用于制造纳米结构的方法 Download PDFInfo
- Publication number
- CN107849735A CN107849735A CN201680043103.3A CN201680043103A CN107849735A CN 107849735 A CN107849735 A CN 107849735A CN 201680043103 A CN201680043103 A CN 201680043103A CN 107849735 A CN107849735 A CN 107849735A
- Authority
- CN
- China
- Prior art keywords
- mask
- layers
- layer
- evaporating temperature
- monocrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000001704 evaporation Methods 0.000 claims abstract description 47
- 230000008020 evaporation Effects 0.000 claims abstract description 34
- 239000013078 crystal Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000002070 nanowire Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 25
- 239000002096 quantum dot Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims 3
- 230000000873 masking effect Effects 0.000 claims 3
- 238000005516 engineering process Methods 0.000 claims 1
- 239000002086 nanomaterial Substances 0.000 abstract description 36
- 238000005530 etching Methods 0.000 abstract description 18
- 238000009834 vaporization Methods 0.000 abstract description 6
- 230000008016 vaporization Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 65
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 19
- 229910002601 GaN Inorganic materials 0.000 description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 229910052733 gallium Inorganic materials 0.000 description 9
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Laminated Bodies (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1555283A FR3037341A1 (fr) | 2015-06-10 | 2015-06-10 | Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures |
| FR1555283 | 2015-06-10 | ||
| PCT/EP2016/062721 WO2016198341A1 (fr) | 2015-06-10 | 2016-06-03 | Procede de fabrication de nanostructures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107849735A true CN107849735A (zh) | 2018-03-27 |
Family
ID=54366290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680043103.3A Pending CN107849735A (zh) | 2015-06-10 | 2016-06-03 | 用于制造纳米结构的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11085130B2 (enExample) |
| EP (1) | EP3307927A1 (enExample) |
| JP (1) | JP6772192B2 (enExample) |
| KR (1) | KR20180017124A (enExample) |
| CN (1) | CN107849735A (enExample) |
| FR (1) | FR3037341A1 (enExample) |
| WO (1) | WO2016198341A1 (enExample) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW239894B (en) * | 1994-07-02 | 1995-02-01 | Nat Science Committee | Quantum dot structure |
| US20070257264A1 (en) * | 2005-11-10 | 2007-11-08 | Hersee Stephen D | CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS |
| CN101443887A (zh) * | 2006-03-10 | 2009-05-27 | Stc.Unm公司 | Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件 |
| US7745315B1 (en) * | 2007-10-03 | 2010-06-29 | Sandia Corporation | Highly aligned vertical GaN nanowires using submonolayer metal catalysts |
| CN102414788A (zh) * | 2009-06-08 | 2012-04-11 | 国际商业机器公司 | 用纳米/微球光刻制造纳米/微线太阳能电池 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3884881T2 (de) * | 1987-08-04 | 1994-02-10 | Sharp Kk | Halbleiterlaservorrichtung. |
| JP3635683B2 (ja) * | 1993-10-28 | 2005-04-06 | ソニー株式会社 | 電界効果トランジスタ |
| US5482890A (en) * | 1994-10-14 | 1996-01-09 | National Science Council | Method of fabricating quantum dot structures |
| US20080073743A1 (en) * | 2006-02-17 | 2008-03-27 | Lockheed Martin Corporation | Templated growth of semiconductor nanostructures, related devices and methods |
| EP1994552B1 (en) * | 2006-03-10 | 2020-12-30 | UNM Rainforest Innovations | Two-phase growth of group iii-v nanowires |
| JP4986138B2 (ja) * | 2006-11-15 | 2012-07-25 | 独立行政法人産業技術総合研究所 | 反射防止構造を有する光学素子用成形型の製造方法 |
| JP5152715B2 (ja) | 2007-09-22 | 2013-02-27 | 学校法人関西学院 | 三次元微細加工方法及び三次元微細構造 |
| JP5267945B2 (ja) | 2009-03-31 | 2013-08-21 | 学校法人関西学院 | 三次元微細加工方法及び三次元微細構造 |
| JP5688928B2 (ja) | 2010-07-29 | 2015-03-25 | アキレス株式会社 | 防水靴用防水インナー |
| US8685858B2 (en) | 2011-08-30 | 2014-04-01 | International Business Machines Corporation | Formation of metal nanospheres and microspheres |
| JP5688780B2 (ja) | 2013-05-07 | 2015-03-25 | 学校法人関西学院 | ＳｉＣ基板、炭素供給フィード基板及び炭素ナノ材料付きＳｉＣ基板 |
-
2015
- 2015-06-10 FR FR1555283A patent/FR3037341A1/fr not_active Withdrawn
-
2016
- 2016-06-03 KR KR1020187000777A patent/KR20180017124A/ko not_active Ceased
- 2016-06-03 CN CN201680043103.3A patent/CN107849735A/zh active Pending
- 2016-06-03 JP JP2017563925A patent/JP6772192B2/ja active Active
- 2016-06-03 WO PCT/EP2016/062721 patent/WO2016198341A1/fr not_active Ceased
- 2016-06-03 US US15/579,910 patent/US11085130B2/en active Active
- 2016-06-03 EP EP16729826.4A patent/EP3307927A1/fr active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW239894B (en) * | 1994-07-02 | 1995-02-01 | Nat Science Committee | Quantum dot structure |
| US20070257264A1 (en) * | 2005-11-10 | 2007-11-08 | Hersee Stephen D | CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS |
| CN101443887A (zh) * | 2006-03-10 | 2009-05-27 | Stc.Unm公司 | Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件 |
| US7745315B1 (en) * | 2007-10-03 | 2010-06-29 | Sandia Corporation | Highly aligned vertical GaN nanowires using submonolayer metal catalysts |
| CN102414788A (zh) * | 2009-06-08 | 2012-04-11 | 国际商业机器公司 | 用纳米/微球光刻制造纳米/微线太阳能电池 |
Non-Patent Citations (2)
| Title |
|---|
| 任慧等: "《微纳米含能材料》", 30 April 2015, 北京理工大学出版社 * |
| 杨小丽: "《光电子技术基础》", 28 February 2005, 北京邮电大学出版社 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3307927A1 (fr) | 2018-04-18 |
| JP2018526230A (ja) | 2018-09-13 |
| FR3037341A1 (fr) | 2016-12-16 |
| US11085130B2 (en) | 2021-08-10 |
| JP6772192B2 (ja) | 2020-10-21 |
| WO2016198341A1 (fr) | 2016-12-15 |
| KR20180017124A (ko) | 2018-02-20 |
| US20180327929A1 (en) | 2018-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103477418B (zh) | 石墨基板上的纳米线外延 | |
| CN104145340B (zh) | 具有石墨烯顶部电极和底部电极的纳米线装置以及制造该装置的方法 | |
| US6656573B2 (en) | Method to grow self-assembled epitaxial nanowires | |
| US6773616B1 (en) | Formation of nanoscale wires | |
| Calleja et al. | Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks | |
| Fan et al. | Patterned growth of aligned ZnO nanowire arrays on sapphire and GaN layers | |
| TWI459589B (zh) | 外延結構體的製備方法 | |
| CN106558475B (zh) | 晶圆级单层二硫化钼膜及其制备方法 | |
| TW201344946A (zh) | 外延結構體 | |
| US20150376778A1 (en) | Graphene growth on sidewalls of patterned substrate | |
| Morresi | Molecular beam epitaxy (MBE) | |
| US9761669B1 (en) | Seed-mediated growth of patterned graphene nanoribbon arrays | |
| CN107210195B (zh) | 包括单晶iiia族氮化物层的半导体晶圆 | |
| US8349715B2 (en) | Nanoscale chemical templating with oxygen reactive materials | |
| CN104637788A (zh) | Iii族氮化物微观图形结构的选区生长方法及结构 | |
| US20170170381A1 (en) | Structures and fabrication methods of flexible thermoelectric devices | |
| US20250171928A1 (en) | Hybrid covalent-van der waals system 2d heterostructures by dative epitaxy | |
| CN107849735A (zh) | 用于制造纳米结构的方法 | |
| CN108441943A (zh) | 一种大规模GaN纳米线阵列的制备方法 | |
| Yue et al. | Growth and characterization of graphene, silicene, SiC, and the related nanostructures and heterostructures on silicon wafer | |
| WO2005110057A2 (en) | Crystallographic alignment of high-density nanowire arrays | |
| Zhu et al. | Growth of uniform nanowires with orientation control | |
| CN107424912A (zh) | 一种氮化镓基纳米柱阵列的制备方法 | |
| Alagoz et al. | Fabrication of Crystalline Semiconductor Nanowires by Vapor-Liquid-Solid Glancing Angle Deposition (VLS-GLAD) Technique | |
| HK1261540A1 (en) | Methods for producing composite gan nanocolumns and light emitting structures made from the methods |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180327 |
|
| WD01 | Invention patent application deemed withdrawn after publication |