TWI456791B - 半導體發光晶片及其製造方法 - Google Patents

半導體發光晶片及其製造方法 Download PDF

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Publication number
TWI456791B
TWI456791B TW100102022A TW100102022A TWI456791B TW I456791 B TWI456791 B TW I456791B TW 100102022 A TW100102022 A TW 100102022A TW 100102022 A TW100102022 A TW 100102022A TW I456791 B TWI456791 B TW I456791B
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Taiwan
Prior art keywords
layer
substrate
semiconductor
semiconductor light
nitride
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TW100102022A
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English (en)
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TW201232816A (en
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Jian Shihn Tsang
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Hon Hai Prec Ind Co Ltd
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Priority to TW100102022A priority Critical patent/TWI456791B/zh
Priority to US13/029,128 priority patent/US8253147B2/en
Publication of TW201232816A publication Critical patent/TW201232816A/zh
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Publication of TWI456791B publication Critical patent/TWI456791B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)

Claims (14)

  1. 一種半導體發光晶片，其包括基板及設置在該基板上的發光結構層，該發光結構層包括依次生長的第一半導體層、發光層及第二半導體層，其改進在於：基板與發光結構層之間還具有緩衝層及覆蓋層，該緩衝層包括沿該基板延伸方向生長的氮化物奈米結構，所述覆蓋層由氮化物奈米結構的頂面生長而成，所述緩衝層還包括催化層，該催化層在基板上形成複數間隔區域，所述氮化物奈米結構從催化層各間隔區域的側面沿基板延伸方向生長而成。
  2. 如申請專利範圍第1項所述的半導體發光晶片，其中：所述氮化物奈米結構為氮化物奈米管或氮化物奈米線。
  3. 如申請專利範圍第1項所述的半導體發光晶片，其中：所述氮化物奈米結構的材料為AlxGayIn(1-x-y)N,0≦x≦1,0≦y≦1,且0≦1-x-y≦1。
  4. 如申請專利範圍第1項所述的半導體發光晶片，其中：所述覆蓋層的材料為AlxGayIn(1-x-y)N,0≦x≦1,0≦y≦1,且0≦1-x-y≦1。
  5. 如申請專利範圍第1項所述的半導體發光晶片，其中：所述第二半導體層的頂面形成有透明導電層。
  6. 如申請專利範圍第5項所述的半導體發光晶片，其中：還包括在基板底面形成的第一電極，在透明導電層頂面形成的第二電極，該基板由導電材料製成。
  7. 如申請專利範圍第5項所述的半導體發光晶片，其中：還包括第一電極，在透明導電層頂面形成的第二電極，半導體發光晶片表面開設深入到第一半導體層的開槽，第一電極位於開槽內的第一半導體層上。
  8. 一種半導體發光晶片的製造方法，包括如下步驟： 提供基板；在基板表面形成緩衝層，在該緩衝層內沿基板延伸方向生長氮化物奈米結構；在緩衝層的氮化物奈米結構上生長覆蓋層，所述緩衝層還包括催化層，該催化層在基板上形成複數間隔區域，所述氮化物奈米結構從催化層各間隔區域的側面沿基板延伸方向生長而成；在覆蓋層上形成發光結構層，該發光結構層包括依次生長的第一半導體層、發光層及第二半導體層。
  9. 如申請專利範圍第8項所述的半導體發光晶片製造方法，其中：所述氮化物奈米結構為氮化物奈米管或氮化物奈米線。
  10. 如申請專利範圍第8項所述的半導體發光晶片製造方法，其中：所述氮化物奈米結構的材料為AlxGayIn(1-x-y)N,0≦x≦1,0≦y≦1,且0≦1-x-y≦1。
  11. 如申請專利範圍第8項所述的半導體發光晶片製造方法，其中：所述覆蓋層的材料為AlxGayIn(1-x-y)N,0≦x≦1,0≦y≦1,且0≦1-x-y≦1。
  12. 如申請專利範圍第8項所述的半導體發光晶片製造方法，其中：所述第二半導體層的頂面形成有透明導電層。
  13. 如申請專利範圍第12項所述的半導體發光晶片製造方法，其中：所述透明導電層頂面形成有第二電極，基板底面形成有第一電極，基板由導電材料製成。
  14. 如申請專利範圍第12項所述的半導體發光晶片製造方法，其中：所述透明導電層頂面形成有第二電極，半導體發光晶片表面開設深入到第一半導體層的開槽，開槽底部的第一半導體層上形成第一電極。
TW100102022A 2011-01-20 2011-01-20 半導體發光晶片及其製造方法 TWI456791B (zh)

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TW100102022A TWI456791B (zh) 2011-01-20 2011-01-20 半導體發光晶片及其製造方法
US13/029,128 US8253147B2 (en) 2011-01-20 2011-02-17 Light emitting chip and method for manufacturing the same

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DE102012107001A1 (de) 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
KR102099877B1 (ko) 2013-11-05 2020-04-10 삼성전자 주식회사 질화물 반도체 디바이스의 제조 방법
CN104241479A (zh) * 2014-09-26 2014-12-24 哈尔滨工业大学 一种基于硅基图形化衬底的复合缓冲层led芯片
JP2017178769A (ja) * 2016-03-22 2017-10-05 インディアン インスティテゥート オブ サイエンスＩｎｄｉａｎ Ｉｎｓｔｉｔｕｔｅ Ｏｆ Ｓｃｉｅｎｃｅ 横方向に配向した低欠陥密度で大面積の金属窒化物アイランドのプラットフォームおよびその製造方法

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TW200614320A (en) * 2004-10-21 2006-05-01 Genesis Photonics Inc Gallium nitride series light-emitting apparatus having void structure
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WO2009137556A2 (en) * 2008-05-06 2009-11-12 Kyma Technologies, Inc. Group iii nitride templates and related heterostructures, devices, and methods for making them
KR101178505B1 (ko) * 2009-11-03 2012-09-07 주식회사루미지엔테크 반도체 기판과 이의 제조 방법
KR20110056866A (ko) * 2009-11-23 2011-05-31 삼성전자주식회사 질화물 발광소자 및 그 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200423312A (en) * 2003-03-07 2004-11-01 Sumitomo Chemical Co Gallium nitride single crystal substrate and its manufacturing method
TW200614320A (en) * 2004-10-21 2006-05-01 Genesis Photonics Inc Gallium nitride series light-emitting apparatus having void structure
US20100117057A1 (en) * 2008-02-19 2010-05-13 Wooree Lst Co., Ltd. Nitride semiconductor led using a hybrid buffer layer and a fabrication method therefor

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