JP2018519665A - オプトエレクトロニクス装置およびオプトエレクトロニクス装置の製造方法 - Google Patents

オプトエレクトロニクス装置およびオプトエレクトロニクス装置の製造方法 Download PDF

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JP2018519665A
JP2018519665A JP2017567420A JP2017567420A JP2018519665A JP 2018519665 A JP2018519665 A JP 2018519665A JP 2017567420 A JP2017567420 A JP 2017567420A JP 2017567420 A JP2017567420 A JP 2017567420A JP 2018519665 A JP2018519665 A JP 2018519665A
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pixel
semiconductor
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pixels
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クリスティアン ライラー
クリスティアン ライラー
コルビニアン ペルツルマイヤー
コルビニアン ペルツルマイヤー
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Led Devices (AREA)
JP2017567420A 2015-07-16 2016-07-07 オプトエレクトロニクス装置およびオプトエレクトロニクス装置の製造方法 Pending JP2018519665A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015111574.3 2015-07-16
DE102015111574.3A DE102015111574A1 (de) 2015-07-16 2015-07-16 Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung
PCT/EP2016/066170 WO2017009183A1 (de) 2015-07-16 2016-07-07 Optoelektronische anordnung sowie verfahren zur herstellung einer optoelektronischen anordnung

Publications (1)

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JP2018519665A true JP2018519665A (ja) 2018-07-19

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JP2017567420A Pending JP2018519665A (ja) 2015-07-16 2016-07-07 オプトエレクトロニクス装置およびオプトエレクトロニクス装置の製造方法

Country Status (5)

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US (3) US10854783B2 (zh)
JP (1) JP2018519665A (zh)
DE (2) DE102015111574A1 (zh)
TW (1) TWI623113B (zh)
WO (1) WO2017009183A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020529738A (ja) * 2017-08-03 2020-10-08 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 高密度ピクセル化ｌｅｄチップ、チップアレイデバイス、及びその製造方法

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US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
US11160148B2 (en) 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
DE102015111574A1 (de) * 2015-07-16 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
US10529773B2 (en) 2018-02-14 2020-01-07 Cree, Inc. Solid state lighting devices with opposing emission directions
CN111684673B (zh) * 2018-02-16 2023-04-18 京瓷株式会社 多连片式元件收纳用封装件以及多连片式光半导体装置
FR3089065A1 (fr) * 2018-11-22 2020-05-29 Aledia Diode électroluminescente et procédé de fabrication d’une diode électroluminescente
US11145689B2 (en) * 2018-11-29 2021-10-12 Creeled, Inc. Indicia for light emitting diode chips
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
US11817526B2 (en) 2019-10-29 2023-11-14 Creeled, Inc. Texturing for high density pixelated-LED chips and chip array devices
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods

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JPS5464470U (zh) * 1977-10-14 1979-05-08
JPS5558584A (en) * 1978-10-24 1980-05-01 Sanyo Electric Co Ltd Manufacture of solid display device
DE102007062046A1 (de) * 2007-12-21 2009-06-25 Osram Opto Semiconductors Gmbh Lichtemittierende Bauelementeanordnung, lichtemittierendes Bauelementes sowie Verfahren zum Herstellen einer Bauelementeanordnung
JP2010087515A (ja) * 2008-09-30 2010-04-15 Seoul Opto Devices Co Ltd 発光素子及びその製造方法
JP2011513957A (ja) * 2008-02-29 2011-04-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング モノリシックなオプトエレクトロニクス半導体ボディおよびその製造方法
JP2011513959A (ja) * 2008-02-29 2011-04-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体ボディおよびその製造方法
US20120074441A1 (en) * 2010-09-24 2012-03-29 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
JP2012114184A (ja) * 2010-11-24 2012-06-14 Hitachi Cable Ltd 発光ダイオード
US20130175560A1 (en) * 2012-01-09 2013-07-11 Micron Technology, Inc. Vertical solid-state transducers and solid-state transducer arrays having backside terminals and associated systems and methods
JP2013232503A (ja) * 2012-04-27 2013-11-14 Toshiba Corp 半導体発光装置
WO2014056911A1 (de) * 2012-10-10 2014-04-17 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement mit integrierter schutzdiode und verfahren zu seiner herstellung
JP2015501085A (ja) * 2011-12-22 2015-01-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 表示装置および表示装置の製造方法
JP2015501086A (ja) * 2011-12-20 2015-01-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体部品の製造方法、リードフレームユニットおよびオプトエレクトロニクス半導体部品
US20150185137A1 (en) * 2013-12-27 2015-07-02 Nichia Corporation Aggregate board, light emitting device, and method for testing light emitting element

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JPS52138350U (zh) 1976-04-15 1977-10-20
DE102008016525A1 (de) 2008-03-31 2009-11-26 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102009036621B4 (de) 2009-08-07 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
JP2013232479A (ja) * 2012-04-27 2013-11-14 Toshiba Corp 半導体発光装置
DE102012112302A1 (de) * 2012-12-14 2014-06-18 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
KR101958419B1 (ko) * 2013-01-29 2019-03-14 삼성전자 주식회사 반도체 발광 소자
DE102013102667A1 (de) * 2013-03-15 2014-10-02 Osram Opto Semiconductors Gmbh Anzeigevorrichtung
DE102013109031B4 (de) * 2013-08-21 2021-11-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102015211185A1 (de) 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102015111574A1 (de) * 2015-07-16 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung
DE102015112280A1 (de) 2015-07-28 2017-02-02 Osram Opto Semiconductors Gmbh Bauelement mit einem metallischen Träger und Verfahren zur Herstellung von Bauelementen
DE102015113310B4 (de) 2015-08-12 2022-08-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
DE102015115900A1 (de) 2015-09-21 2017-03-23 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102015117198A1 (de) 2015-10-08 2017-04-13 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements

Patent Citations (14)

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Publication number Priority date Publication date Assignee Title
JPS5464470U (zh) * 1977-10-14 1979-05-08
JPS5558584A (en) * 1978-10-24 1980-05-01 Sanyo Electric Co Ltd Manufacture of solid display device
DE102007062046A1 (de) * 2007-12-21 2009-06-25 Osram Opto Semiconductors Gmbh Lichtemittierende Bauelementeanordnung, lichtemittierendes Bauelementes sowie Verfahren zum Herstellen einer Bauelementeanordnung
JP2011513957A (ja) * 2008-02-29 2011-04-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング モノリシックなオプトエレクトロニクス半導体ボディおよびその製造方法
JP2011513959A (ja) * 2008-02-29 2011-04-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体ボディおよびその製造方法
JP2010087515A (ja) * 2008-09-30 2010-04-15 Seoul Opto Devices Co Ltd 発光素子及びその製造方法
US20120074441A1 (en) * 2010-09-24 2012-03-29 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
JP2012114184A (ja) * 2010-11-24 2012-06-14 Hitachi Cable Ltd 発光ダイオード
JP2015501086A (ja) * 2011-12-20 2015-01-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体部品の製造方法、リードフレームユニットおよびオプトエレクトロニクス半導体部品
JP2015501085A (ja) * 2011-12-22 2015-01-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 表示装置および表示装置の製造方法
US20130175560A1 (en) * 2012-01-09 2013-07-11 Micron Technology, Inc. Vertical solid-state transducers and solid-state transducer arrays having backside terminals and associated systems and methods
JP2013232503A (ja) * 2012-04-27 2013-11-14 Toshiba Corp 半導体発光装置
WO2014056911A1 (de) * 2012-10-10 2014-04-17 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement mit integrierter schutzdiode und verfahren zu seiner herstellung
US20150185137A1 (en) * 2013-12-27 2015-07-02 Nichia Corporation Aggregate board, light emitting device, and method for testing light emitting element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020529738A (ja) * 2017-08-03 2020-10-08 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 高密度ピクセル化ｌｅｄチップ、チップアレイデバイス、及びその製造方法
JP7290001B2 (ja) 2017-08-03 2023-06-13 クリーエルイーディー・インコーポレーテッド 高密度ピクセル化ｌｅｄチップ、チップアレイデバイス、及びその製造方法

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Publication number Publication date
US11527678B2 (en) 2022-12-13
WO2017009183A1 (de) 2017-01-19
US20180212108A1 (en) 2018-07-26
DE102015111574A1 (de) 2017-01-19
DE112016003199A5 (de) 2018-03-29
US20230054120A1 (en) 2023-02-23
TWI623113B (zh) 2018-05-01
US10854783B2 (en) 2020-12-01
TW201719926A (zh) 2017-06-01
US20210074888A1 (en) 2021-03-11

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