JP2018510492A - エピタキシャルにコーティングされた半導体ウェハとエピタキシャルにコーティングされた半導体ウェハの製造方法 - Google Patents
エピタキシャルにコーティングされた半導体ウェハとエピタキシャルにコーティングされた半導体ウェハの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 30
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 239000012298 atmosphere Substances 0.000 claims abstract description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 238000005498 polishing Methods 0.000 claims abstract description 8
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 7
- 229910052786 argon Inorganic materials 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 239000007800 oxidant agent Substances 0.000 claims abstract description 5
- 238000005259 measurement Methods 0.000 claims abstract description 4
- 230000000694 effects Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 201000006935 Becker muscular dystrophy Diseases 0.000 abstract 2
- 208000037663 Best vitelliform macular dystrophy Diseases 0.000 abstract 2
- 208000020938 vitelliform macular dystrophy 2 Diseases 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 87
- 238000010438 heat treatment Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002356 laser light scattering Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
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- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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Abstract
Description
300mmの直径を有する単結晶シリコンからなる両面研磨された基板ウェハが提供される。例B1による基板ウェハは6.1×1017から6.7×1017atоms/cm3の濃度内(新ASTM)の格子間酸素を含み、18から19.5mΩcmの弾性を有してp型ドープされる。例B2による基板ウェハは5.3×1017から5.6×1017atоms/cm3の濃度内(新ASTM)の格子間酸素を含み、29から30Ωcmの弾性を有してn型ドープされる。基板ウェハは本発明による方法ステップのシーケンスを用いる研磨されたエピタキシャル層を有する半導体ウェハを形成するために加工される。エピタキシャルに堆積された層は4μm(例B1)と9μm(例B2)をそれぞれ有する。例B1による半導体ウェハはp/p+エピタキシャルにコーティングされた半導体ウェハであり、例B2による半導体ウェハはn/n−エピタキシャルにコーティングされた半導体ウェハである。エピタキシャルに堆積された層は29から30Ωcmの範囲内の抵抗を有する。
「HZ」はRTA処理の温度におけるRTA処理の期間を意味する。
「DZ1 平均」は半導体ウェハの径にわたって平均化された無欠陥層の深さを意味する。
「BMD 平均」は半導体ウェハの径にわたって平均化されたBMDの濃度を意味する。
「BMDピーク」は半導体ウェハの中心において決定されたBMDのピーク濃度を意味する。
「BMD 50μm」は半導体ウェハの径方向中心における50μmの深さにおけるBMDの濃度を意味する。
Claims (6)
- エピタキシャルにコーティングされた半導体ウェハであって、
表面側と裏面側とを有する単結晶シリコンで構成された基板ウェハと、
前記基板ウェハの前記表面側に研磨された表面を有するシリコンで構成されたエピタキシャル層とを備え、前記研磨された表面は10μm×10μmの面積を有する測定窓に対して0.055nm以下のRMS粗さを有し、エピタキシャルにコーティングされた半導体ウェハはさらに、
前記エピタキシャル層の前記研磨された表面から前記基板ウェハの裏面側へ、前記半導体ウェハの中心と縁部との間で6μm以上14μm以下の深さまで延びる無欠陥層と、
前記無欠陥層に隣接し、前記エピタキシャル層の研磨された表面から70μm以下の距離において3.5×109cm−3以上のピーク密度を有するBMDに成長可能なBMD核を有する領域を備える、エピタキシャルにコーティングされた半導体ウェハ。 - 前記エピタキシャル層の前記研磨された表面から50μmの距離における密度が前記ピーク密度の70%以上であるBMDに成長可能なBMD核を有する、請求項1に記載のエピタキシャルにコーティングされた半導体ウェハ。
- 前記エピタキシャル層の前記研磨された表面から200μmの距離であって前記基板ウェハの前記裏面側における密度が前記ピーク密度の60%以下であるBMDに成長可能なBMD核を有する、請求項1または2に記載のエピタキシャルにコーティングされた半導体ウェハ。
- エピタキシャルにコーティングされた半導体ウェハを製造する方法であって、
表面側と裏面側とを有する単結晶シリコンで構成された基板ウェハを提供するステップと、
前記基板ウェハの前記表面側にシリコンで構成されたエピタキシャル層を堆積させるステップと、
前記エピタキシャル層を酸化剤で処理するステップと、
前記エピタキシャルにコーティングされた半導体ウェハを1160℃以上1185℃以下の温度範囲内の温度で、15秒以上30秒以下の時間RTA処理するステップとを含み、前記エピタキシャル層はアルゴンとアンモニアからなる雰囲気に曝され、前記エピタキシャル層上に酸窒化層が形成され、方法はさらに、
前記酸窒化層を除去するステップと、
前記エピタキシャル層を研磨するステップを含む、方法。 - 前記基板ウェハの前記裏面側は、前記RTA処理の間、前記RTA処理の温度においてほとんどまたは全く窒化効果を有しない雰囲気に曝される、請求項4に記載の方法。
- 前記酸窒化層は0.8%以上2.0%以下のフッ化水素を含む水性エッチング液を用いて除去される、請求項4または5に記載の方法。
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