JP2018137483A - プラズマ加工方法及びこの方法を用いて製造された基板 - Google Patents

プラズマ加工方法及びこの方法を用いて製造された基板 Download PDF

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JP2018137483A
JP2018137483A JP2018098774A JP2018098774A JP2018137483A JP 2018137483 A JP2018137483 A JP 2018137483A JP 2018098774 A JP2018098774 A JP 2018098774A JP 2018098774 A JP2018098774 A JP 2018098774A JP 2018137483 A JP2018137483 A JP 2018137483A
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substrate
etching
mask
side mask
processing method
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JP2018137483A5 (enExample
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田中　雅彦
Masahiko Tanaka
雅彦 田中
野沢　善幸
Yoshiyuki Nozawa
善幸 野沢
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SPP Technologies Co Ltd
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SPP Technologies Co Ltd
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  • Dicing (AREA)
  • Plasma Technology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
JP2018098774A 2018-05-23 2018-05-23 プラズマ加工方法及びこの方法を用いて製造された基板 Pending JP2018137483A (ja)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021005903A1 (ja) * 2019-07-11 2021-01-14 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
KR20210072690A (ko) * 2019-12-09 2021-06-17 에스피티에스 테크놀러지스 리미티드 반도체 웨이퍼 다이싱 공정

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034508A (ja) * 2006-07-27 2008-02-14 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2009141307A (ja) * 2007-11-15 2009-06-25 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP2009182059A (ja) * 2008-01-29 2009-08-13 Toshiba Corp ドライエッチング方法
JP2014513868A (ja) * 2011-03-14 2014-06-05 プラズマ − サーム、エルエルシー 半導体ウェーハをプラズマ・ダイシングする方法及び装置
JP2015133460A (ja) * 2014-01-16 2015-07-23 株式会社ディスコ ウェーハの分割方法
JP2015133459A (ja) * 2014-01-16 2015-07-23 株式会社ディスコ ウェーハの分割方法
WO2015166368A1 (en) * 2014-05-02 2015-11-05 International Business Machines Corporation Etch rate enhancement for a silicon etch process through etch chamber pretreatment
JP2016103658A (ja) * 2016-02-10 2016-06-02 Ｓｐｐテクノロジーズ株式会社 プラズマエッチング装置
JP2016131178A (ja) * 2015-01-13 2016-07-21 株式会社Sumco シリコンウェーハの製造方法及び半導体装置の製造方法
JP2016146395A (ja) * 2015-02-06 2016-08-12 株式会社テラプローブ 半導体装置の製造方法及び半導体装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034508A (ja) * 2006-07-27 2008-02-14 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2009141307A (ja) * 2007-11-15 2009-06-25 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP2009182059A (ja) * 2008-01-29 2009-08-13 Toshiba Corp ドライエッチング方法
JP2014513868A (ja) * 2011-03-14 2014-06-05 プラズマ − サーム、エルエルシー 半導体ウェーハをプラズマ・ダイシングする方法及び装置
JP2015133460A (ja) * 2014-01-16 2015-07-23 株式会社ディスコ ウェーハの分割方法
JP2015133459A (ja) * 2014-01-16 2015-07-23 株式会社ディスコ ウェーハの分割方法
WO2015166368A1 (en) * 2014-05-02 2015-11-05 International Business Machines Corporation Etch rate enhancement for a silicon etch process through etch chamber pretreatment
JP2016131178A (ja) * 2015-01-13 2016-07-21 株式会社Sumco シリコンウェーハの製造方法及び半導体装置の製造方法
JP2016146395A (ja) * 2015-02-06 2016-08-12 株式会社テラプローブ 半導体装置の製造方法及び半導体装置
JP2016103658A (ja) * 2016-02-10 2016-06-02 Ｓｐｐテクノロジーズ株式会社 プラズマエッチング装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021005903A1 (ja) * 2019-07-11 2021-01-14 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2021015880A (ja) * 2019-07-11 2021-02-12 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7410478B2 (ja) 2019-07-11 2024-01-10 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US12249625B2 (en) 2019-07-11 2025-03-11 Fuji Electric Co., Ltd. Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
KR20210072690A (ko) * 2019-12-09 2021-06-17 에스피티에스 테크놀러지스 리미티드 반도체 웨이퍼 다이싱 공정
EP3848959A1 (en) * 2019-12-09 2021-07-14 SPTS Technologies Limited A semiconductor wafer dicing process
US12100619B2 (en) 2019-12-09 2024-09-24 Spts Technologies Limited Semiconductor wafer dicing process
KR102876667B1 (ko) 2019-12-09 2025-10-24 에스피티에스 테크놀러지스 리미티드 반도체 웨이퍼 다이싱 공정

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