JP2018125428A - 半導体発光素子および半導体発光素子の製造方法 - Google Patents
半導体発光素子および半導体発光素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 title description 15
- 239000000463 material Substances 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000009826 distribution Methods 0.000 claims abstract description 9
- 238000005253 cladding Methods 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 24
- 229910002601 GaN Inorganic materials 0.000 claims description 19
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 7
- 229910002704 AlGaN Inorganic materials 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 237
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 230000000903 blocking effect Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- -1 AlGaN Chemical compound 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (9)
- シリコン(Si)を含むn型窒化アルミニウムガリウム(AlGaN)系半導体材料のn型クラッド層と、
前記n型クラッド層上に設けられ、Siを含む中間層と、
前記中間層上に設けられるAlGaN系半導体材料の活性層と、
前記活性層上に設けられるp型半導体層と、を備え、
前記n型クラッド層、前記中間層および前記活性層が積層される方向のSi濃度の分布が前記中間層の位置に少なくとも局所的なピークを有することを特徴とする半導体発光素子。 - 前記中間層は、少なくともシリコン(Si)、アルミニウム(Al)および窒素(N)を含むことを特徴とする請求項1に記載の半導体発光素子。
- 前記中間層は、第1中間層と、前記第1中間層よりSi濃度が高い第2中間層とを含むことを特徴とする請求項1または2に記載の半導体発光素子。
- 前記第1中間層は、前記n型クラッド層上に設けられ、前記第2中間層は、前記第1中間層上に設けられ、前記活性層は、前記第2中間層上に設けられることを特徴とする請求項3に記載の半導体発光素子。
- 前記第1中間層は、AlGaN系半導体材料で構成され、前記第2中間層は、前記第1中間層よりも窒化アルミニウム(AlN)のモル分率が低いAlGaN系半導体材料で構成されることを特徴とする請求項3または4の記載の半導体発光素子。
- 前記中間層のピークのSi濃度は、前記n型クラッド層のSi濃度より高いことを特徴とする請求項1から5のいずれか一項に記載の半導体発光素子。
- 前記中間層のピークのSi濃度は、前記活性層のSi濃度より高く、前記n型クラッド層のSi濃度の最大値より低いことを特徴とする請求項1から5のいずれか一項に記載の半導体発光素子。
- 前記中間層のピークのSi濃度は、8×1018/cm3以上、2.2×1019/cm3以下であることを特徴とする請求項1から7のいずれか一項に記載の半導体発光素子。
- 基板上にシリコン(Si)を含むn型窒化アルミニウムガリウム(AlGaN)系半導体材料のn型クラッド層を形成する工程と、
前記n型クラッド層上にSiを含む中間層を形成する工程と、
前記中間層上にAlGaN系半導体材料の活性層を形成する工程と、
前記活性層上にp型半導体層を形成する工程と、を備え、
前記中間層を形成する工程は、前記n型クラッド層を形成する工程よりも基板温度が低いことを特徴とする半導体発光素子の製造方法。
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JP2017016858A JP6674394B2 (ja) | 2017-02-01 | 2017-02-01 | 半導体発光素子および半導体発光素子の製造方法 |
CN201880009668.9A CN110383507B (zh) | 2017-02-01 | 2018-01-11 | 半导体发光元件以及半导体发光元件的制造方法 |
PCT/JP2018/000479 WO2018142870A1 (ja) | 2017-02-01 | 2018-01-11 | 半導体発光素子および半導体発光素子の製造方法 |
TW107102209A TWI678815B (zh) | 2017-02-01 | 2018-01-22 | 半導體發光元件以及半導體發光元件的製造方法 |
US16/526,044 US10944026B2 (en) | 2017-02-01 | 2019-07-30 | Semiconductor light emitting device and method of manufacturing semiconductor light emitting device |
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Cited By (4)
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JP2020061473A (ja) * | 2018-10-10 | 2020-04-16 | 国立大学法人三重大学 | 窒化物半導体の製造方法、窒化物半導体、及び発光素子 |
JP2020202214A (ja) * | 2019-06-06 | 2020-12-17 | 日機装株式会社 | 窒化物半導体発光素子 |
JP2021010038A (ja) * | 2020-10-30 | 2021-01-28 | 日機装株式会社 | 窒化物半導体発光素子 |
CN114388665A (zh) * | 2020-10-16 | 2022-04-22 | 日机装株式会社 | 氮化物半导体发光元件 |
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JP6379265B1 (ja) * | 2017-09-12 | 2018-08-22 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
JP6640815B2 (ja) * | 2017-10-26 | 2020-02-05 | 日機装株式会社 | 半導体発光素子の製造方法 |
CN112768576B (zh) * | 2021-01-25 | 2022-04-12 | 天津三安光电有限公司 | 一种发光二极管及制备方法 |
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JP2020202214A (ja) * | 2019-06-06 | 2020-12-17 | 日機装株式会社 | 窒化物半導体発光素子 |
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JP2022066094A (ja) * | 2020-10-16 | 2022-04-28 | 日機装株式会社 | 窒化物半導体発光素子 |
JP7154266B2 (ja) | 2020-10-16 | 2022-10-17 | 日機装株式会社 | 窒化物半導体発光素子 |
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US20190355872A1 (en) | 2019-11-21 |
US10944026B2 (en) | 2021-03-09 |
TWI678815B (zh) | 2019-12-01 |
JP6674394B2 (ja) | 2020-04-01 |
CN110383507A (zh) | 2019-10-25 |
TW201841387A (zh) | 2018-11-16 |
WO2018142870A1 (ja) | 2018-08-09 |
CN110383507B (zh) | 2022-06-03 |
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