TW201841387A - 半導體發光元件以及半導體發光元件的製造方法 - Google Patents
半導體發光元件以及半導體發光元件的製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000463 material Substances 0.000 claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 23
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000009826 distribution Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 278
- 238000005253 cladding Methods 0.000 claims description 62
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000011247 coating layer Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- -1 AlGaN Chemical compound 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
一種半導體發光元件,包括:n型氮化鋁鎵(AlGaN)系半導體材料之n型披覆層24,包含矽(Si);中間層25,設置於n型披覆層24上且包含Si;AlGaN系半導體材料之活性層26,設置於中間層25上;以及p型半導體層,設置於活性層26上。n型披覆層24、中間層25以及活性層26所積層之方向的Si濃度之分佈於中間層25之位置至少具有局部之波峰。
Description
本發明係關於一種半導體發光元件以及半導體發光元件的製造方法。
近年來,輸出藍色光之發光二極體或雷射二極體等半導體發光元件已得到實用化,進而推進輸出短波長之深紫外光(deep ultraviolet)之發光元件之開發。因深紫外光具有高殺菌能力,故能夠輸出深紫外光之半導體發光元件作為醫療或食品加工之現場的無水銀之殺菌用光源而受到矚目。此種深紫外光用之發光元件具有在基板上依次積層之氮化鋁鎵(AlGaN)系之n型披覆層、活性層、p型披覆層。為了提高光輸出,提出在活性層與p型半導體層之間形成氮化鋁(AlN)之電子阻擋層(例如參照專利文獻1)。
[先前技術文獻]
[專利文獻]
專利文獻1:日本特開2010-205767號公報。
對深紫外光用之半導體發光元件要求進一步提高光輸出。
本發明鑒於上述課題而完成,其例示性目的之一在於提供一種提高半導體發光元件之光輸出之技術。
本發明之一態樣之半導體發光元件包括:n型氮化鋁鎵(AlGaN)系半導體材料之n型披覆層,包含矽(Si);中間層,設置於n型披覆層上且包含Si;AlGaN系半導體材料之活性層,設置於中間層上;以及p型半導體層,設置於活性層上。n型披覆層、中間層以及活性層所積層之方向的Si濃度之分佈於中間層之位置至少具有局部之波峰(peak)。
根據該態樣,於n型披覆層與活性層之間以Si濃度分佈具有波峰之方式設置中間層,藉此可提高發光元件之光輸出。
中間層亦可至少包含矽(Si)、鋁(Al)以及氮(N)。
中間層亦可包含第一中間層、及Si濃度高於第一中間層之第二中間層。
亦可為第一中間層設置於n型披覆層上,第二中間層設置於第一中間層上,活性層設置於第二中間層上。
亦可為第一中間層由AlGaN系半導體材料所構成,第二中間層由氮化鋁(AlN)之莫耳分率低於第一中間層之AlGaN系半導體材料所構成。
中間層之波峰之Si濃度亦可高於n型披覆層之Si濃度。
中間層之波峰之Si濃度亦可高於活性層之Si濃度,且低於n型披覆層之Si濃度之最大值。
中間層之波峰之Si濃度亦可為8×1018/cm3以上2.2×1019/cm3以下。
本發明之另一態樣係半導體發光元件的製造方法。該方法包括下述步驟:於基板上形成包含矽(Si)的n型氮化鋁鎵(AlGaN)系半導體材料之n型披覆層;於n型披覆層上形成包含Si之中間層;於中間層上形成AlGaN系半導體材料之活性層;以及於活性層上形成p型半導體層。形成中間層之步驟之基板溫度係比形成n型披覆層之步驟之基板溫度更低。
根據該態樣,藉由於n型披覆層與活性層之間形成包含Si之中間層,而可提高發光元件之光輸出。而且,藉由使中間層之成長溫度低於n型披覆層之成長溫度,中間層之形成時之界面之潤濕性提高而界面能下降,可抑制向活性層之穿過位錯之傳播。藉此,可提高活性層之結晶品質而提高光輸出。
根據本發明,可提高半導體發光元件之光輸出。
10‧‧‧半導體發光元件
20‧‧‧基板
20a‧‧‧第一主面
20b‧‧‧第二主面
22‧‧‧緩衝層
24‧‧‧n型披覆層
24a‧‧‧露出面
25‧‧‧中間層
25a‧‧‧第一中間層
25b‧‧‧第二中間層
26‧‧‧活性層
26a‧‧‧第一井層
26b‧‧‧障壁層
26c‧‧‧第二井層
28‧‧‧電子阻擋層
30‧‧‧p型披覆層
32‧‧‧n側電極
34‧‧‧P側電極
A、B‧‧‧曲線圖
圖1係概略地顯示實施形態之半導體發光元件之構成之剖視圖。
圖2係示意性地顯示半導體發光元件之矽(Si)濃度分佈之曲線圖。
圖3係顯示中間層之Si濃度之波峰值與半導體發光元件之光輸出之關係之曲線圖。
以下,一邊參照圖式,一邊對用以實施本發明之形態進行詳細說明。另外,說明中對同一元件附上同一符號,並適當省略重複之說明。而且,為了幫助理解說明,各圖式中之各構成要素之尺寸比未必與實際之發光元件之尺寸 比一致。
圖1係概略地顯示實施形態之半導體發光元件10之構成之剖視圖。半導體發光元件10係以發出中心波長λ約為360nm以下之「深紫外光」的方式構成之LED(Light Emitting Diode;發光二極管)晶片。為了輸出此種波長之深紫外光,半導體發光元件10由帶隙(band gap)約為3.4eV以上的氮化鋁鎵(AlGaN)系半導體材料所構成。本實施形態中,特別顯示出了發出中心波長λ約為240nm至350nm之深紫外光之情形。
本說明書中,「AlGaN系半導體材料」是指主要包含氮化鋁(AlN)與氮化鎵(GaN)之半導體材料,包含含有氮化銦(InN)等其他材料之半導體材料。因此,本說明書中提及的「AlGaN系半導體材料」例如可由In1-x-yAlxGayN(0≦x+y≦1,0≦x≦1,0≦y≦1)之組成而表示,且包含AlN、GaN、AlGaN、氮化銦鋁(InAlN)、氮化銦鎵(InGaN)、氮化銦鋁鎵(InAlGaN)。
而且,有時為了在「AlGaN系半導體材料」中將實質不包含AlN之材料加以區分而稱作「GaN系半導體材料」。「GaN系半導體材料」中主要包含GaN或InGaN,該些之中亦可包含含有微量之AlN之材料。同樣地,有時為了在「AlGaN系半導體材料」中將實質不包含GaN之材料加以 區分而稱作「AlN系半導體材料」。「AlN系半導體材料」中主要包含AlN或InAlN,該些中亦可包含含有微量之GaN之材料。
半導體發光元件10具有基板20、緩衝層22、n型披覆層24、中間層25、活性層26、電子阻擋層28、p型披覆層30、n側電極32以及p側電極34。
基板20係相對於半導體發光元件10所發出之深紫外光具有透光性之基板,例如係藍寶石(Al2O3)基板。基板20具有第一主面20a、及第一主面20a之相反側之第二主面20b。第一主面20a係成為用以使較緩衝層22更上之各層成長之結晶成長面的一主面。第二主面20b係成為用以將活性層26發出之深紫外光提取至外部之光提取面的一主面。變形例中,基板20可以是氮化鋁(AlN)基板,亦可以是氮化鋁鎵(AlGaN)基板。
緩衝層22形成於基板20之第一主面20a之上。緩衝層22係用以形成較n型披覆層24更上之各層之基底層(模板層)。緩衝層22例如係無摻雜(undoped)之AlN層,具體而言,係經高溫成長之AlN(HT-AlN;High Temperature AlN;高溫氮化鋁)層。緩衝層22可包含形成於AlN層上之無摻雜之AlGaN層。變形例中,於基板20為AlN基板或AlGaN基板之情形時,緩衝層22可僅由無摻雜之AlGaN層構成。 即,緩衝層22包含無摻雜之AlN層以及AlGaN層之至少一者。
n型披覆層24形成於緩衝層22之上。n型披覆層24係n型之AlGaN系半導體材料層,例如,係摻雜作為n型之雜質之矽(Si)之AlGaN層。n型披覆層24以透過活性層26發出之深紫外光的方式選擇組成比,例如,以AlN之莫耳分率為20%以上,較佳為以40%以上或50%以上的方式形成。n型披覆層24具有大於活性層26發出之深紫外光之波長之帶隙,例如以帶隙為4.3eV以上之方式形成。n型披覆層24較佳為以AlN之莫耳分率為80%以下,即,帶隙為5.5eV以下之方式形成,更理想為以AlN之莫耳分率為70%以下(即,帶隙為5.2eV以下)之方式形成。n型披覆層24具有1μm至3μm左右之厚度,例如具有2μm左右之厚度。
n型披覆層24以作為雜質之矽(Si)之濃度為1×1018/cm3以上5×1019/cm3以下之方式形成。n型披覆層24較佳為以Si濃度為5×1018/cm3以上3×1019/cm3以下之方式形成,較佳為以7×1018/cm3以上2×1019/cm3之方式形成。一實施例中,n型披覆層24之Si濃度為1×1019/cm3左右,為8×1018/cm3以上1.5×1019/cm3以下之範圍。
中間層25形成於n型披覆層24之上。中間層25係至 少包含矽(Si)、鋁(Al)以及氮(N)之層,例如,係摻雜有作為雜質之Si之AlN系半導體材料或AlGaN系半導體材料。中間層25具有1nm至100nm左右之厚度,例如具有1nm、2nm、3nm、5nm、10nm或20nm之厚度。
中間層25可為單層,亦可為多層結構。於中間層25為多層結構之情形時,由Si濃度或AlN組成比不同之複數層之積層體構成中間層25。中間層25例如包含Si濃度相對低之第一中間層25a、及Si濃度相對高之第二中間層25b。第一中間層25a設置於n型披覆層24之上,第二中間層25b設置於第一中間層25a之上。中間層25可由三層以上之多層結構構成,例如,可由第一中間層與第二中間層交替積層而成之積層體所構成。
於中間層25為多層結構之情形時,第一中間層25a之Si濃度至少高於活性層26之Si濃度且低於n型披覆層24之Si濃度。第二中間層25b之Si濃度高於第一中間層25a之Si濃度。第二中間層25b之Si濃度亦可高於或低於n型披覆層24之Si濃度。而且,第一中間層25a之AlN莫耳分率可高於第二中間層25b之AlN莫耳分率。
活性層26由AlGaN系半導體材料所構成,夾在中間層25與電子阻擋層28之間而形成雙異質介面(double hetero junction)結構。活性層26具有單層或多層之量子井 結構,例如,由利用無摻雜之AlGaN系半導體材料形成之障壁層、以及利用無摻雜之AlGaN系半導體材料形成之井層之積層體所構成。活性層26為了輸出波長355nm以下之深紫外光而以帶隙為3.4eV以上之方式構成,例如,以可輸出波長310nm以下之深紫外光之方式選擇AlN組成比。
活性層26例如包含第一井層26a、障壁層26b以及第二井層26c。第一井層26a設置於中間層25與障壁層26b之間,第二井層26c配置於障壁層26b與電子阻擋層28之間。第一井層26a以及第二井層26c之AlN莫耳分率低於障壁層26b。
電子阻擋層28形成於活性層26之上。電子阻擋層28係p型之AlGaN系半導體材料層,例如以AlN之莫耳分率為40%以上,較佳為50%以上之方式形成。電子阻擋層28能夠以AlN之莫耳分率為80%以上之方式形成,亦可由實質不含GaN之AlN系半導體材料形成。電子阻擋層具有1nm至10nm左右之厚度,例如具有2nm至5nm左右之厚度。電子阻擋層28可為p型,亦可為無摻雜之半導體層。
p型披覆層30係形成於電子阻擋層28之上之p型半導體層。p型披覆層30係p型之AlGaN系半導體材料層,例如係摻雜作為p型之雜質之鎂(Mg)之AlGaN層。p型披 覆層30具有300nm至700nm左右之厚度,例如具有400nm至600nm左右之厚度。p型披覆層30亦可由實質不包含AlN之p型GaN系半導體材料形成。
n側電極32形成於n型披覆層24之部分區域上。n側電極32由在n型披覆層24之上依序積層有鈦(Ti)/鋁(Al)/Ti/金(Au)所得之多層膜而形成。p側電極34形成於p型披覆層30之上。p側電極34由在p型披覆層30之上依序積層之鎳(Ni)/金(Au)之多層膜而形成。
接下來,對半導體發光元件10的製造方法進行說明。首先,準備基板20,於基板20之第一主面20a之上依次形成有緩衝層22、n型披覆層24、中間層25、活性層26、電子阻擋層28、p型披覆層30。
基板20係藍寶石(Al2O3)基板,且係用以形成AlGaN系半導體材料之成長基板。例如,於藍寶石基板之(0001)面上形成有緩衝層22。緩衝層22例如包含經高溫成長之AlN(HT-AlN)層以及無摻雜之AlGaN(u-AlGaN)層。n型披覆層24、活性層26、電子阻擋層28以及p型披覆層30係由AlGaN系半導體材料、AlN系半導體材料或GaN系半導體材料形成之層,可使用有機金屬化學氣相沉積(MOVPE;Metal Organic Vapour Phase Epitaxy)法或分子束磊晶(MBE;Molecular Beam Epitaxy)法等周知之磊晶成長法形成。
中間層25可至少將四甲基矽烷(Si(CH3)4)或矽烷(SiH4)作為原料氣體,使用有機金屬化學氣相沉積(MOVPE)法或分子束磊晶(MBE)法等周知之磊晶成長法而形成。中間層25例如將四甲基矽烷(Si(CH3)4)、三甲基鋁(TMA(Trimethylaluminium);(CH3)3Al)以及氨氣(NH3)作為原料氣體而形成。中間層25可進而將三甲基鎵(TMG(Trimethylgallium);(CH3)3Ga)用作原料氣體。藉由使用該些原料氣體,可形成摻雜了矽(Si)之氮化鋁(AlN)及摻雜了矽(Si)之氮化鋁鎵(AlGaN)之層作為中間層25。
關於中間層25之形成,較佳為以較之n型披覆層24之形成步驟低之溫度執行。例如,n型披覆層24之形成溫度係於950℃至1200℃下進行,與此相對,中間層25之形成溫度較佳為於900℃至1100℃下進行。藉由以較之n型披覆層24低之溫度形成中間層25,可提高中間層25之形成時之界面之潤濕性且界面能降低,可抑制向活性層26之穿過位錯之傳播。藉此,可提高活性層26之結晶品質而抑制因位錯引起之光輸出之降低。
接下來,於p型披覆層30之上形成遮罩,未形成遮罩之露出區域之中間層25、活性層26、電子阻擋層28以及p型披覆層30被除去。中間層25、活性層26、電子阻擋層28以及p型披覆層30之除去可藉由電漿蝕刻來進行。 於n型披覆層24之露出面24a之上形成n側電極32,於已除去了遮罩之p型披覆層30之上形成p側電極34。n側電極32以及p側電極34例如可利用電子束蒸鍍法或濺鍍法等周知之方法而形成。藉此,完成圖1所顯示之半導體發光元件10。
圖2係示意性地顯示半導體發光元件10之矽濃度分佈之曲線圖,且示意性地顯示n型披覆層24、中間層25以及活性層26之SIMS(secondary ion mass spectroscopy;二次離子質量分析)分佈。圖示例中,n型披覆層24之Si濃度為1×1019/cm3左右,曲線圖A表示中間層25中的Si濃度之局部波峰高於n型披覆層24之情形。曲線圖B表示中間層25中的Si濃度之局部波峰低於n型披覆層24之情形。曲線圖B之情形時,Si濃度之谷間存在於n型披覆層24到中間層25,Si濃度一旦下降便朝向局部之波峰上升。Si濃度之谷間之位置相當於第一中間層25a,Si濃度之波峰之位置相當於第二中間層25b。無論為曲線圖A、B之哪個Si濃度分佈,藉由設置具有Si濃度之局部波峰之中間層25,便可提高半導體發光元件10之光輸出。
接下來,對本實施形態之實施例進行說明。各實施例中,將n型披覆層24之Si濃度設為8×1018/cm3至1.5×1019/cm3左右而使中間層25之Si濃度之波峰值發生變化。
實施例1中,中間層25之Si濃度之波峰值為4.9×1019/cm3,獲得發光波長280nm以及光輸出1mW。實施例2中,中間層25之Si濃度之波峰值為1.8×1019/cm3,獲得發光波長284nm以及光輸出6.4mW。實施例3中,中間層25之Si濃度之波峰值為1.0×1019/cm3,獲得發光波長280nm以及光輸出6.5mW。實施例4中,中間層25之Si濃度之波峰值為0.8×1019/cm3,獲得發光波長280nm以及光輸出5.5mW。實施例1、2具有接近圖2之曲線圖A之形狀的Si濃度分佈,實施例3、4具有接近圖2之曲線圖B之形狀的Si濃度分佈。另外,作為比較例,形成實質不包含Si之中間層,將中間層之Si濃度設為5×10×1017/cm3。比較例中,實質無法確認發光。
圖3是表示中間層25之Si濃度之波峰值與半導體發光元件10之光輸出之關係之曲線圖,並將上述實施例以及比較例中之Si濃度與光輸出之關係加以總結。根據曲線圖可知,藉由將中間層25之Si濃度之波峰值設為3×1018/cm3以上5×1019/cm3以下,可獲得1mW以上之光輸出。而且,藉由將中間層25之Si濃度之波峰值設為8×1018/cm3以上2.2×1019/cm3以下,可獲得5.5mW以上之光輸出。
以上,基於實施形態對本發明進行了說明。但本發明不限於上述實施形態,能夠進行各種設計變更,熟悉本技藝者可理解各種變形例成為可能且這種變形例亦處於本發 明之範圍內。
(產業可利用性)
根據本發明,可提高半導體發光元件之光輸出。
Claims (9)
- 一種半導體發光元件,包括:n型氮化鋁鎵系半導體材料之n型披覆層,包含矽;中間層,設置於前述n型披覆層上且包含矽;氮化鋁鎵系半導體材料之活性層,設置於前述中間層上;以及p型半導體層,設置於前述活性層上;前述n型披覆層、前述中間層以及前述活性層所積層之方向的矽濃度之分佈於前述中間層之位置至少具有局部之波峰。
- 如請求項1所記載之半導體發光元件,其中前述中間層至少包含矽、鋁以及氮。
- 如請求項1或2所記載之半導體發光元件,其中前述中間層包含第一中間層、及矽濃度高於前述第一中間層之第二中間層。
- 如請求項3所記載之半導體發光元件,其中前述第一中間層設置於前述n型披覆層上,前述第二中間層設置於前述第一中間層上,前述活性層設置於前述第二中間層上。
- 如請求項3或4所記載之半導體發光元件,其中前述第一中間層由氮化鋁鎵系半導體材料所構成,前述第二中間層由氮化鋁之莫耳分率低於前述第一中間層之氮化鋁鎵系半導體材料所構成。
- 如請求項1至5中任一項所記載之半導體發光元件,其中前述中間層之波峰之矽濃度高於前述n型披覆層之矽濃度。
- 如請求項1至5中任一項所記載之半導體發光元件,其中前述中間層之波峰之矽濃度高於前述活性層之矽濃度,且低於前述n型披覆層之矽濃度之最大值。
- 如請求項1至7中任一項所記載之半導體發光元件,其中前述中間層之波峰之矽濃度為8×10 18/cm 3以上2.2×10 19/cm 3以下。
- 一種半導體發光元件的製造方法,包括下述步驟:於基板上形成包含矽的n型氮化鋁鎵系半導體材料之n型披覆層;於前述n型披覆層上形成包含矽之中間層;於前述中間層上形成氮化鋁鎵系半導體材料之活性層;以及於前述活性層上形成p型半導體層;形成前述中間層之步驟之基板溫度係比形成前述n型披覆層之步驟之基板溫度更低。
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US10944026B2 (en) | 2021-03-09 |
US20190355872A1 (en) | 2019-11-21 |
JP2018125428A (ja) | 2018-08-09 |
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WO2018142870A1 (ja) | 2018-08-09 |
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