JP2018121056A5 - - Google Patents

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Publication number
JP2018121056A5
JP2018121056A5 JP2018008709A JP2018008709A JP2018121056A5 JP 2018121056 A5 JP2018121056 A5 JP 2018121056A5 JP 2018008709 A JP2018008709 A JP 2018008709A JP 2018008709 A JP2018008709 A JP 2018008709A JP 2018121056 A5 JP2018121056 A5 JP 2018121056A5
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JP
Japan
Prior art keywords
etching solution
hydroxide
metal
group
strong base
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JP2018008709A
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English (en)
Japanese (ja)
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JP2018121056A (ja
JP6717862B2 (ja
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Priority claimed from US15/872,620 external-priority patent/US11035044B2/en
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Publication of JP2018121056A5 publication Critical patent/JP2018121056A5/ja
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JP2018008709A 2017-01-23 2018-01-23 タングステン及びgst膜のためのエッチング溶液 Active JP6717862B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762449290P 2017-01-23 2017-01-23
US62/449,290 2017-01-23
US15/872,620 2018-01-16
US15/872,620 US11035044B2 (en) 2017-01-23 2018-01-16 Etching solution for tungsten and GST films

Publications (3)

Publication Number Publication Date
JP2018121056A JP2018121056A (ja) 2018-08-02
JP2018121056A5 true JP2018121056A5 (https=) 2018-11-08
JP6717862B2 JP6717862B2 (ja) 2020-07-08

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ID=61192641

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JP2018008709A Active JP6717862B2 (ja) 2017-01-23 2018-01-23 タングステン及びgst膜のためのエッチング溶液

Country Status (7)

Country Link
US (1) US11035044B2 (https=)
EP (1) EP3351658B1 (https=)
JP (1) JP6717862B2 (https=)
KR (1) KR102219829B1 (https=)
CN (1) CN108342735B (https=)
SG (1) SG10201800568XA (https=)
TW (1) TWI674339B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12480046B2 (en) 2019-12-05 2025-11-25 Microsoft Technology Licensing, Llc Method of selectively etching a metal component
US11211543B2 (en) 2019-12-05 2021-12-28 Microsoft Technology Licensing, Llc Semiconductor-superconductor hybrid device and its fabrication
CN112522707B (zh) * 2020-11-20 2021-12-03 湖北兴福电子材料有限公司 一种高选择比的钨蚀刻液
JP7826946B2 (ja) * 2021-01-12 2026-03-10 三菱ケミカル株式会社 エッチング組成物、エッチング方法、半導体デバイスの製造方法及びゲートオールアラウンド型トランジスタの製造方法
KR20230038933A (ko) * 2021-09-13 2023-03-21 주식회사 이엔에프테크놀로지 실리콘 선택적 식각액 조성물
CN114854419B (zh) * 2022-04-13 2023-09-05 华中科技大学 一种用于湿法蚀刻相变材料的碱性蚀刻液及其应用
CN115895660A (zh) * 2022-12-29 2023-04-04 沧州信联化工有限公司 一种tmah系各向异性硅蚀刻液及其制备方法

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976500A (en) * 1973-08-27 1976-08-24 Enthone, Incorporated Method for dissolving non-ferrous metals
US4995942A (en) 1990-04-30 1991-02-26 International Business Machines Corporation Effective near neutral pH etching solution for molybdenum or tungsten
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US5563119A (en) 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
US5662769A (en) * 1995-02-21 1997-09-02 Advanced Micro Devices, Inc. Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US5997658A (en) * 1998-01-09 1999-12-07 Ashland Inc. Aqueous stripping and cleaning compositions
US6162370A (en) 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
US6177349B1 (en) * 1998-12-07 2001-01-23 Advanced Micro Devices, Inc. Preventing Cu dendrite formation and growth
US20060003910A1 (en) 2004-06-15 2006-01-05 Hsu Jiun Y Composition and method comprising same for removing residue from a substrate
SG118380A1 (en) * 2004-06-15 2006-01-27 Air Prod & Chem Composition and method comprising same for removing residue from a substrate
US8178482B2 (en) 2004-08-03 2012-05-15 Avantor Performance Materials, Inc. Cleaning compositions for microelectronic substrates
KR100640002B1 (ko) 2005-09-06 2006-11-01 한국전자통신연구원 상변화 재료 박막 패터닝 방법 및 이를 이용한 상변화메모리 소자의 제조 방법
KR100746224B1 (ko) 2006-01-02 2007-08-03 삼성전자주식회사 멀티비트 셀들을 구비하는 상변화 기억소자들 및 그프로그램 방법들
US7663909B2 (en) * 2006-07-10 2010-02-16 Qimonda North America Corp. Integrated circuit having a phase change memory cell including a narrow active region width
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2009013987A1 (ja) * 2007-07-26 2009-01-29 Mitsubishi Gas Chemical Company, Inc. 洗浄防食用組成物および半導体素子または表示素子の製造方法
US8551682B2 (en) * 2007-08-15 2013-10-08 Dynaloy, Llc Metal conservation with stripper solutions containing resorcinol
KR100935591B1 (ko) 2007-12-26 2010-01-07 주식회사 하이닉스반도체 콘택 저항 및 리셋 커런트를 개선할 수 있는 상변화 메모리소자 및 그 제조방법
JP2010050204A (ja) * 2008-08-20 2010-03-04 Oki Semiconductor Co Ltd 半導体素子の製造方法
JP5523325B2 (ja) 2008-09-09 2014-06-18 昭和電工株式会社 チタン系金属、タングステン系金属、チタンタングステン系金属またはそれらの窒化物のエッチング液
US9481937B2 (en) 2009-04-30 2016-11-01 Asm America, Inc. Selective etching of reactor surfaces
US8110535B2 (en) 2009-08-05 2012-02-07 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
US8518865B2 (en) 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
EP2514855A1 (en) * 2009-12-17 2012-10-24 Showa Denko K.K. Composition for etching ruthenium-based metal and method for preparing same
TWI449170B (zh) * 2009-12-29 2014-08-11 Ind Tech Res Inst 相變化記憶體裝置及其製造方法
CN102770524B (zh) * 2010-01-29 2015-04-22 高级技术材料公司 附有金属布线的半导体用清洗剂
CN102221791B (zh) 2011-04-29 2014-09-03 西安东旺精细化学有限公司 一种光致抗蚀剂的剥离液组合物
WO2012166902A1 (en) * 2011-06-01 2012-12-06 Avantor Performance Materials, Inc. SEMI-AQUEOUS POLYMER REMOVAL COMPOSITIONS WITH ENHANCED COMPATIBILITY TO COPPER, TUNGSTEN, AND POROUS LOW-ĸ DIELECTRICS
CN102820223A (zh) 2011-06-08 2012-12-12 安集微电子(上海)有限公司 一种同时抛光相变材料和钨的化学机械抛光方法
JP2013004871A (ja) * 2011-06-20 2013-01-07 Showa Denko Kk 金属エッチング用組成物、および金属エッチング用組成物を用いた半導体装置の製造方法
KR101782329B1 (ko) 2011-10-18 2017-09-28 삼성전자주식회사 식각용 조성물 및 이를 이용하는 반도체 기억 소자의 형성 방법
KR20130049538A (ko) 2011-11-04 2013-05-14 삼성전자주식회사 연마용 슬러리 조성물 및 이를 이용한 상변화 메모리 장치의 제조 방법
US9523154B2 (en) * 2011-12-20 2016-12-20 Solvay (China) Co., Ltd. Use of phenol compounds as activator for metal surface corrosion
SG11201403556WA (en) * 2011-12-28 2014-07-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
JP6061915B2 (ja) * 2012-03-12 2017-01-18 株式会社Jcu 選択的エッチング方法
WO2013138276A1 (en) * 2012-03-12 2013-09-19 Advanced Technology Materials, Inc. Methods for the selective removal of ashed spin-on glass
KR20140139565A (ko) * 2012-03-18 2014-12-05 인티그리스, 인코포레이티드 개선된 장벽층 상용성 및 세정 성능을 가진 cmp-후 배합물
JP6222907B2 (ja) * 2012-09-06 2017-11-01 株式会社フジミインコーポレーテッド 研磨用組成物
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
JP6139975B2 (ja) 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
US20160122696A1 (en) * 2013-05-17 2016-05-05 Advanced Technology Materials, Inc. Compositions and methods for removing ceria particles from a surface
US20150104952A1 (en) * 2013-10-11 2015-04-16 Ekc Technology, Inc. Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper
WO2016076034A1 (ja) * 2014-11-13 2016-05-19 三菱瓦斯化学株式会社 半導体素子を洗浄するためのアルカリ土類金属を含む洗浄液、およびそれを用いた半導体素子の洗浄方法
JP6599464B2 (ja) * 2015-01-05 2019-10-30 インテグリス・インコーポレーテッド 化学機械研磨後製剤および使用方法
US10400167B2 (en) * 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same

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