SG10201800568XA - Etching solution for tungsten and gst films - Google Patents
Etching solution for tungsten and gst filmsInfo
- Publication number
- SG10201800568XA SG10201800568XA SG10201800568XA SG10201800568XA SG10201800568XA SG 10201800568X A SG10201800568X A SG 10201800568XA SG 10201800568X A SG10201800568X A SG 10201800568XA SG 10201800568X A SG10201800568X A SG 10201800568XA SG 10201800568X A SG10201800568X A SG 10201800568XA
- Authority
- SG
- Singapore
- Prior art keywords
- etching solution
- tungsten
- gst
- optionally
- water
- Prior art date
Links
- 238000005530 etching Methods 0.000 title abstract 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052721 tungsten Inorganic materials 0.000 title abstract 3
- 239000010937 tungsten Substances 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 239000007800 oxidant agent Substances 0.000 abstract 2
- 150000001412 amines Chemical class 0.000 abstract 1
- 150000003863 ammonium salts Chemical class 0.000 abstract 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract 1
- 229910000000 metal hydroxide Inorganic materials 0.000 abstract 1
- 150000004692 metal hydroxides Chemical class 0.000 abstract 1
- 229910021645 metal ion Inorganic materials 0.000 abstract 1
- 150000007524 organic acids Chemical class 0.000 abstract 1
- 150000002978 peroxides Chemical class 0.000 abstract 1
- -1 phenolic derivative compound Chemical class 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/38—Alkaline compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762449290P | 2017-01-23 | 2017-01-23 | |
| US15/872,620 US11035044B2 (en) | 2017-01-23 | 2018-01-16 | Etching solution for tungsten and GST films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201800568XA true SG10201800568XA (en) | 2018-08-30 |
Family
ID=61192641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201800568XA SG10201800568XA (en) | 2017-01-23 | 2018-01-22 | Etching solution for tungsten and gst films |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11035044B2 (https=) |
| EP (1) | EP3351658B1 (https=) |
| JP (1) | JP6717862B2 (https=) |
| KR (1) | KR102219829B1 (https=) |
| CN (1) | CN108342735B (https=) |
| SG (1) | SG10201800568XA (https=) |
| TW (1) | TWI674339B (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12480046B2 (en) | 2019-12-05 | 2025-11-25 | Microsoft Technology Licensing, Llc | Method of selectively etching a metal component |
| US11211543B2 (en) | 2019-12-05 | 2021-12-28 | Microsoft Technology Licensing, Llc | Semiconductor-superconductor hybrid device and its fabrication |
| CN112522707B (zh) * | 2020-11-20 | 2021-12-03 | 湖北兴福电子材料有限公司 | 一种高选择比的钨蚀刻液 |
| JP7826946B2 (ja) * | 2021-01-12 | 2026-03-10 | 三菱ケミカル株式会社 | エッチング組成物、エッチング方法、半導体デバイスの製造方法及びゲートオールアラウンド型トランジスタの製造方法 |
| KR20230038933A (ko) * | 2021-09-13 | 2023-03-21 | 주식회사 이엔에프테크놀로지 | 실리콘 선택적 식각액 조성물 |
| CN114854419B (zh) * | 2022-04-13 | 2023-09-05 | 华中科技大学 | 一种用于湿法蚀刻相变材料的碱性蚀刻液及其应用 |
| CN115895660A (zh) * | 2022-12-29 | 2023-04-04 | 沧州信联化工有限公司 | 一种tmah系各向异性硅蚀刻液及其制备方法 |
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-
2018
- 2018-01-16 US US15/872,620 patent/US11035044B2/en active Active
- 2018-01-19 TW TW107101968A patent/TWI674339B/zh active
- 2018-01-22 SG SG10201800568XA patent/SG10201800568XA/en unknown
- 2018-01-23 JP JP2018008709A patent/JP6717862B2/ja active Active
- 2018-01-23 EP EP18152899.3A patent/EP3351658B1/en active Active
- 2018-01-23 CN CN201810064060.8A patent/CN108342735B/zh active Active
- 2018-01-23 KR KR1020180008355A patent/KR102219829B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3351658A1 (en) | 2018-07-25 |
| TW201827648A (zh) | 2018-08-01 |
| US11035044B2 (en) | 2021-06-15 |
| JP2018121056A (ja) | 2018-08-02 |
| KR20180087186A (ko) | 2018-08-01 |
| KR102219829B1 (ko) | 2021-02-24 |
| US20180209049A1 (en) | 2018-07-26 |
| CN108342735A (zh) | 2018-07-31 |
| CN108342735B (zh) | 2020-08-18 |
| JP6717862B2 (ja) | 2020-07-08 |
| EP3351658B1 (en) | 2022-02-09 |
| TWI674339B (zh) | 2019-10-11 |
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