JP2018101814A5 - - Google Patents
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- JP2018101814A5 JP2018101814A5 JP2018062421A JP2018062421A JP2018101814A5 JP 2018101814 A5 JP2018101814 A5 JP 2018101814A5 JP 2018062421 A JP2018062421 A JP 2018062421A JP 2018062421 A JP2018062421 A JP 2018062421A JP 2018101814 A5 JP2018101814 A5 JP 2018101814A5
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Description
第２の誘電体ペアとほとんどの第１の誘電体ペアとの間に、少数の第３の誘電体ペアを介在させても良く、第２の誘電体ペアとほとんどの第３の誘電体ペアとの間に少数の第１の誘電体ペアを介在させても良い。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2010-0134584 | 2010-12-24 | ||
| KR1020100134584A KR101769075B1 (ko) | 2010-12-24 | 2010-12-24 | 발광 다이오드 칩 및 그것을 제조하는 방법 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016184549A Division JP6316892B2 (ja) | 2010-12-24 | 2016-09-21 | 発光ダイオードパッケージ |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018128475A Division JP6674978B2 (ja) | 2010-12-24 | 2018-07-05 | 発光ダイオードパッケージ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018101814A JP2018101814A (ja) | 2018-06-28 |
| JP6368061B2 JP6368061B2 (ja) | 2018-08-01 |
| JP2018101814A5 true JP2018101814A5 (ja) | 2018-08-09 |
Family
ID=46314133
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013545995A Active JP5788991B2 (ja) | 2010-12-24 | 2011-06-13 | 発光ダイオードチップ及びそれを製造する方法 |
| JP2015096753A Active JP6013555B2 (ja) | 2010-12-24 | 2015-05-11 | 発光ダイオードチップ及びそれを製造する方法 |
| JP2016184549A Active JP6316892B2 (ja) | 2010-12-24 | 2016-09-21 | 発光ダイオードパッケージ |
| JP2018062421A Active JP6368061B2 (ja) | 2010-12-24 | 2018-03-28 | 発光ダイオードパッケージ |
| JP2018128475A Active JP6674978B2 (ja) | 2010-12-24 | 2018-07-05 | 発光ダイオードパッケージ |
Family Applications Before (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013545995A Active JP5788991B2 (ja) | 2010-12-24 | 2011-06-13 | 発光ダイオードチップ及びそれを製造する方法 |
| JP2015096753A Active JP6013555B2 (ja) | 2010-12-24 | 2015-05-11 | 発光ダイオードチップ及びそれを製造する方法 |
| JP2016184549A Active JP6316892B2 (ja) | 2010-12-24 | 2016-09-21 | 発光ダイオードパッケージ |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018128475A Active JP6674978B2 (ja) | 2010-12-24 | 2018-07-05 | 発光ダイオードパッケージ |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8314440B2 (ja) |
| EP (3) | EP3264476B1 (ja) |
| JP (5) | JP5788991B2 (ja) |
| KR (1) | KR101769075B1 (ja) |
| CN (4) | CN103270611B (ja) |
| DE (2) | DE202011110759U1 (ja) |
| WO (1) | WO2012086888A1 (ja) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101769075B1 (ko) * | 2010-12-24 | 2017-08-18 | 서울바이오시스 주식회사 | 발광 다이오드 칩 및 그것을 제조하는 방법 |
| JP5865695B2 (ja) * | 2011-12-19 | 2016-02-17 | 昭和電工株式会社 | 発光ダイオード及びその製造方法 |
| US20140231852A1 (en) * | 2013-02-15 | 2014-08-21 | Seoul Viosys Co., Ltd. | Led chip resistant to electrostatic discharge and led package including the same |
| KR102075644B1 (ko) * | 2013-06-14 | 2020-02-10 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| FR3015772B1 (fr) * | 2013-12-19 | 2017-10-13 | Aledia | Dispositif optoelectronique a diodes electroluminescentes a extraction de lumiere amelioree |
| KR20160034534A (ko) | 2014-09-19 | 2016-03-30 | 삼성전자주식회사 | 반도체 발광 소자 |
| KR20160143430A (ko) * | 2015-06-05 | 2016-12-14 | 서울바이오시스 주식회사 | 발광 다이오드 |
| KR102432588B1 (ko) * | 2015-09-22 | 2022-08-17 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
| KR102471102B1 (ko) * | 2015-10-23 | 2022-11-25 | 서울바이오시스 주식회사 | 분포 브래그 반사기를 가지는 발광 다이오드 칩 |
| KR102351775B1 (ko) * | 2015-11-18 | 2022-01-14 | 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. | 화상 형성 장치 및 이에 포함되는 발광 소자 |
| CN109285929B (zh) | 2017-07-21 | 2023-09-08 | 日亚化学工业株式会社 | 发光装置、集成型发光装置以及发光模块 |
| JP7082273B2 (ja) | 2017-07-21 | 2022-06-08 | 日亜化学工業株式会社 | 発光装置、集積型発光装置および発光モジュール |
| KR20190022326A (ko) * | 2017-08-24 | 2019-03-06 | 서울바이오시스 주식회사 | 분포 브래그 반사기를 가지는 발광 다이오드 |
| CN207818608U (zh) | 2017-11-22 | 2018-09-04 | 厦门市三安光电科技有限公司 | 一种led发光装置 |
| DE102018101700A1 (de) * | 2018-01-25 | 2019-07-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
| DE102018111168A1 (de) * | 2018-05-09 | 2019-11-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement mit einer ersten und einer zweiten stromverteilungsstruktur |
| KR102496316B1 (ko) | 2018-05-30 | 2023-02-07 | 서울바이오시스 주식회사 | 분포 브래그 반사기를 가지는 발광 다이오드 칩 |
| DE102018117018A1 (de) * | 2018-07-13 | 2020-01-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement mit einer silberhaltigen stromaufweitungsstruktur und optoelektronische vorrichtung |
| JP6982251B2 (ja) * | 2018-09-12 | 2021-12-17 | サミー株式会社 | スロットマシン |
| JP7032657B2 (ja) * | 2018-09-12 | 2022-03-09 | サミー株式会社 | スロットマシン |
| US11251340B2 (en) | 2019-01-23 | 2022-02-15 | Epistar Corporation | Light-emitting device with distributed Bragg reflection structure |
| KR20210004242A (ko) * | 2019-07-03 | 2021-01-13 | 삼성전자주식회사 | Led 소자 및 그의 제조 방법 |
| JP2021114594A (ja) * | 2019-08-27 | 2021-08-05 | 株式会社東芝 | 光半導体素子 |
| CN112786747A (zh) * | 2021-02-05 | 2021-05-11 | 东莞市中晶半导体科技有限公司 | InGaN基红光LED芯片结构 |
| CN117239033A (zh) * | 2021-06-25 | 2023-12-15 | 厦门三安光电有限公司 | 半导体发光元件、半导体发光器件及显示装置 |
| CN114068785A (zh) * | 2021-09-30 | 2022-02-18 | 华灿光电（浙江）有限公司 | 增加侧向出光的发光二极管芯片及其制备方法 |
| JP7370438B1 (ja) | 2022-10-05 | 2023-10-27 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| JP7370437B1 (ja) | 2022-10-05 | 2023-10-27 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2973581B2 (ja) * | 1991-04-26 | 1999-11-08 | 大同特殊鋼株式会社 | チャープ状光反射層を備えた半導体装置 |
| JP2778868B2 (ja) * | 1991-03-26 | 1998-07-23 | 紀克 山内 | 面発光型発光ダイオード |
| JPH065916A (ja) * | 1992-06-16 | 1994-01-14 | Omron Corp | 半導体発光素子 |
| JP3439063B2 (ja) * | 1997-03-24 | 2003-08-25 | 三洋電機株式会社 | 半導体発光素子および発光ランプ |
| US5912915A (en) * | 1997-05-19 | 1999-06-15 | Coherent, Inc. | Ultrafast laser with multiply-folded resonant cavity |
| US6320206B1 (en) * | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
| EP1098375A1 (en) * | 1999-11-05 | 2001-05-09 | Interuniversitair Micro-Elektronica Centrum Vzw | Optical filter and Resonant Cavity LED comprising the said optical filter |
| JP4163833B2 (ja) * | 1999-11-30 | 2008-10-08 | 松下電器産業株式会社 | 半導体発光装置 |
| JP4101468B2 (ja) * | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | 発光装置の製造方法 |
| JP2003270432A (ja) * | 2002-03-13 | 2003-09-25 | Shin Etsu Handotai Co Ltd | 可視光反射部材 |
| US7367691B2 (en) * | 2003-06-16 | 2008-05-06 | Industrial Technology Research Institute | Omnidirectional one-dimensional photonic crystal and light emitting device made from the same |
| ATE486374T1 (de) * | 2003-08-08 | 2010-11-15 | Kang Sang Kyu | Nitrid-mikrolicht-emissionsdiode mit grosser helligkeit und herstellungsverfahren dafür |
| US20050104078A1 (en) * | 2003-11-13 | 2005-05-19 | Ite Compound Semiconductor Corporation | Light-emitting diode having chemical compound based reflective structure |
| JP2007273975A (ja) * | 2006-03-10 | 2007-10-18 | Matsushita Electric Works Ltd | 発光素子 |
| WO2007105626A1 (ja) * | 2006-03-10 | 2007-09-20 | Matsushita Electric Works, Ltd. | 発光素子 |
| US7573074B2 (en) * | 2006-05-19 | 2009-08-11 | Bridgelux, Inc. | LED electrode |
| KR20080017180A (ko) * | 2006-08-21 | 2008-02-26 | 삼성전기주식회사 | 반도체 발광장치 |
| JP5196097B2 (ja) * | 2006-08-29 | 2013-05-15 | 日亜化学工業株式会社 | 半導体発光素子の製造方法及び半導体発光素子、並びにそれを用いた発光装置 |
| US9024349B2 (en) * | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| JP2008211164A (ja) * | 2007-01-29 | 2008-09-11 | Matsushita Electric Ind Co Ltd | 窒化物半導体発光装置及びその製造方法 |
| JP4851953B2 (ja) * | 2007-02-07 | 2012-01-11 | 株式会社日立製作所 | 光学部材 |
| JP2008235827A (ja) * | 2007-03-23 | 2008-10-02 | Matsushita Electric Works Ltd | 発光装置 |
| DE102007032555A1 (de) * | 2007-07-12 | 2009-01-15 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
| TWI352438B (en) * | 2007-08-31 | 2011-11-11 | Huga Optotech Inc | Semiconductor light-emitting device |
| JP5634003B2 (ja) * | 2007-09-29 | 2014-12-03 | 日亜化学工業株式会社 | 発光装置 |
| TWI531088B (zh) * | 2009-11-13 | 2016-04-21 | 首爾偉傲世有限公司 | 具有分散式布拉格反射器的發光二極體晶片 |
| KR101769075B1 (ko) * | 2010-12-24 | 2017-08-18 | 서울바이오시스 주식회사 | 발광 다이오드 칩 및 그것을 제조하는 방법 |
-
2010
- 2010-12-24 KR KR1020100134584A patent/KR101769075B1/ko active IP Right Grant
-
2011
- 2011-03-28 US US13/073,522 patent/US8314440B2/en active Active
- 2011-06-13 WO PCT/KR2011/004314 patent/WO2012086888A1/en active Application Filing
- 2011-06-13 CN CN201180062417.5A patent/CN103270611B/zh active Active
- 2011-06-13 JP JP2013545995A patent/JP5788991B2/ja active Active
- 2011-06-13 EP EP17185126.4A patent/EP3264476B1/en active Active
- 2011-06-13 CN CN201611035832.2A patent/CN106653974B/zh active Active
- 2011-06-13 EP EP11850200.4A patent/EP2656402B1/en active Active
- 2011-06-13 DE DE202011110759.4U patent/DE202011110759U1/de not_active Expired - Lifetime
- 2011-06-13 CN CN201611036363.6A patent/CN106653958B/zh active Active
- 2011-06-13 CN CN201611048693.7A patent/CN106784233B/zh active Active
- 2011-06-13 EP EP21199362.1A patent/EP3958020A1/en active Pending
- 2011-06-13 DE DE202011110910.4U patent/DE202011110910U1/de not_active Expired - Lifetime
-
2015
- 2015-05-11 JP JP2015096753A patent/JP6013555B2/ja active Active
-
2016
- 2016-09-21 JP JP2016184549A patent/JP6316892B2/ja active Active
-
2018
- 2018-03-28 JP JP2018062421A patent/JP6368061B2/ja active Active
- 2018-07-05 JP JP2018128475A patent/JP6674978B2/ja active Active
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