JP2014183316A5 - - Google Patents
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- JP2014183316A5 JP2014183316A5 JP2014050827A JP2014050827A JP2014183316A5 JP 2014183316 A5 JP2014183316 A5 JP 2014183316A5 JP 2014050827 A JP2014050827 A JP 2014050827A JP 2014050827 A JP2014050827 A JP 2014050827A JP 2014183316 A5 JP2014183316 A5 JP 2014183316A5
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- 239000002105 nanoparticle Substances 0.000 description 4
Description
図１（Ａ）を再度参照する。一次元のナノ粒子１０２は、互いに向かい合っている第１の末端１０４および第２の末端１０６を含む。第１の末端キャップ１０８は、前記一次元のナノ粒子における第１の末端１０４および第２の末端１０６と接触している。一実施形態では、第１の末端キャップ１０８は、一次元のナノ粒子１０２における第１の末端１０４および第２の末端１０６を完全に覆っていてもよい。別の実施形態では、第１の末端キャップ１０８は、第１の末端１０４および第２の末端１０６と、接線方向に接触していてもよい。第１の末端キャップ１０８は、概して、形状が球状または楕円体状であり、円形または楕円形状の断面積を有する。一実施形態では、前記第１および第２の末端キャップは、円筒形状あることができるが、前記一次元のナノ粒子より小さいアスペクト比を有する。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/834,363 US8937294B2 (en) | 2013-03-15 | 2013-03-15 | Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same |
| US13/834,363 | 2013-03-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014183316A JP2014183316A (ja) | 2014-09-29 |
| JP2014183316A5 true JP2014183316A5 (ja) | 2018-09-20 |
| JP6487625B2 JP6487625B2 (ja) | 2019-03-20 |
Family
ID=50280211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014050827A Expired - Fee Related JP6487625B2 (ja) | 2013-03-15 | 2014-03-13 | マルチヘテロ接合ナノ粒子、その製造方法および同ナノ粒子を含む物品 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8937294B2 (ja) |
| EP (1) | EP2778122B1 (ja) |
| JP (1) | JP6487625B2 (ja) |
| KR (1) | KR102212759B1 (ja) |
| CN (1) | CN104046360B (ja) |
| TW (1) | TWI543396B (ja) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8937294B2 (en) * | 2013-03-15 | 2015-01-20 | Rohm And Haas Electronic Materials Llc | Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same |
| KR102061533B1 (ko) | 2015-03-13 | 2020-01-02 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 나노구조 물질 방법 및 장치 |
| EP3188260B1 (en) | 2015-12-31 | 2020-02-12 | Dow Global Technologies Llc | Nanostructure material structures and methods |
| WO2017116487A1 (en) * | 2015-12-31 | 2017-07-06 | Dow Global Technologies Llc | Continuous flow syntheses of nanostructure materials |
| TWI751144B (zh) * | 2016-03-24 | 2022-01-01 | 美商陶氏全球科技責任有限公司 | 光電子裝置及使用方法 |
| US10544042B2 (en) * | 2017-01-17 | 2020-01-28 | International Business Machines Corporation | Nanoparticle structure and process for manufacture |
| EP3612613A1 (en) * | 2017-04-19 | 2020-02-26 | Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. | Semiconductor nanostructures and applications |
| CN110544746B (zh) * | 2018-05-29 | 2021-03-16 | Tcl科技集团股份有限公司 | 发光二极管及其制备方法 |
| JP7072169B2 (ja) * | 2018-06-22 | 2022-05-20 | スタンレー電気株式会社 | ナノ粒子集合体とその製造方法 |
| WO2020261347A1 (ja) * | 2019-06-24 | 2020-12-30 | シャープ株式会社 | 発光素子 |
| CN110499489B (zh) * | 2019-07-23 | 2021-06-01 | 电子科技大学 | 一种半导体/金属异质结纳米线阵列材料的制备工艺 |
| CN111162187B (zh) * | 2019-12-31 | 2022-07-05 | 广东聚华印刷显示技术有限公司 | 双异质结纳米棒及其制备方法及发光二极管 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6788453B2 (en) | 2002-05-15 | 2004-09-07 | Yissum Research Development Company Of The Hebrew Univeristy Of Jerusalem | Method for producing inorganic semiconductor nanocrystalline rods and their use |
| ATE488625T1 (de) | 2002-08-13 | 2010-12-15 | Massachusetts Inst Technology | Halbleiter-nanokristallheterostrukturen |
| US7534488B2 (en) | 2003-09-10 | 2009-05-19 | The Regents Of The University Of California | Graded core/shell semiconductor nanorods and nanorod barcodes |
| US7298383B2 (en) | 2003-06-11 | 2007-11-20 | Agfa Healthcare | Method and user interface for modifying at least one of contrast and density of pixels of a processed image |
| US7303628B2 (en) | 2004-03-23 | 2007-12-04 | The Regents Of The University Of California | Nanocrystals with linear and branched topology |
| JP5137825B2 (ja) | 2005-06-15 | 2013-02-06 | イッサム リサーチ デベロップメント カンパニー オブ ザ ヘブライ ユニバーシティ オブ エルサレム | Ｉｉｉ−ｖ族半導体コア−ヘテロシェルナノクリスタル |
| JP2007184566A (ja) * | 2005-12-06 | 2007-07-19 | Canon Inc | 半導体ナノワイヤを用いた半導体素子、それを用いた表示装置及び撮像装置 |
| US7394094B2 (en) * | 2005-12-29 | 2008-07-01 | Massachusetts Institute Of Technology | Semiconductor nanocrystal heterostructures |
| US7465954B2 (en) * | 2006-04-28 | 2008-12-16 | Hewlett-Packard Development Company, L.P. | Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles |
| US8049203B2 (en) * | 2006-12-22 | 2011-11-01 | Qunano Ab | Nanoelectronic structure and method of producing such |
| KR100904588B1 (ko) * | 2007-07-05 | 2009-06-25 | 삼성전자주식회사 | 코어/쉘 형태의 나노와이어를 제조하는 방법, 그에 의해제조된 나노와이어 및 이를 포함하는 나노와이어 소자 |
| US7960715B2 (en) * | 2008-04-24 | 2011-06-14 | University Of Iowa Research Foundation | Semiconductor heterostructure nanowire devices |
| TWI385118B (zh) | 2008-11-28 | 2013-02-11 | Univ Nat Cheng Kung | Heterogeneous surface nanowire structure and its manufacturing method |
| TW201023393A (en) | 2008-12-05 | 2010-06-16 | Univ Nat Cheng Kung | Manufacturing method for heterojunction nano-wire structure using nano-zinc oxide wire as substrate |
| WO2011049529A1 (en) * | 2009-10-22 | 2011-04-28 | Sol Voltaics Ab | Nanowire tunnel diode and method for making the same |
| US8563395B2 (en) * | 2009-11-30 | 2013-10-22 | The Royal Institute For The Advancement Of Learning/Mcgill University | Method of growing uniform semiconductor nanowires without foreign metal catalyst and devices thereof |
| WO2011090863A1 (en) * | 2010-01-19 | 2011-07-28 | Eastman Kodak Company | Ii-vi core-shell semiconductor nanowires |
| US8212236B2 (en) * | 2010-01-19 | 2012-07-03 | Eastman Kodak Company | II-VI core-shell semiconductor nanowires |
| KR20110092600A (ko) | 2010-02-09 | 2011-08-18 | 삼성전기주식회사 | ＩｎＰ 양자점의 제조 방법 및 이에 따른 ＩｎＰ 양자점 |
| KR20130057436A (ko) * | 2010-04-23 | 2013-05-31 | 퍼듀 리서치 파운데이션 | 초박 나노와이어 기반 및 나노규모 헤테로구조 기반 열전 변환 구조와 이를 제조하는 방법 |
| TWI409963B (zh) | 2010-05-07 | 2013-09-21 | Huang Chung Cheng | 同軸奈米線結構的太陽能電池 |
| FR2973936B1 (fr) * | 2011-04-05 | 2014-01-31 | Commissariat Energie Atomique | Procede de croissance selective sur une structure semiconductrice |
| US8937294B2 (en) * | 2013-03-15 | 2015-01-20 | Rohm And Haas Electronic Materials Llc | Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same |
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2013
- 2013-03-15 US US13/834,363 patent/US8937294B2/en not_active Expired - Fee Related
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2014
- 2014-03-13 JP JP2014050827A patent/JP6487625B2/ja not_active Expired - Fee Related
- 2014-03-14 EP EP14159765.8A patent/EP2778122B1/en active Active
- 2014-03-14 TW TW103109388A patent/TWI543396B/zh not_active IP Right Cessation
- 2014-03-17 KR KR1020140031059A patent/KR102212759B1/ko active IP Right Grant
- 2014-03-17 CN CN201410098121.4A patent/CN104046360B/zh not_active Expired - Fee Related
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2015
- 2015-01-16 US US14/599,181 patent/US10510924B2/en not_active Expired - Fee Related