JP2018019074A5 - - Google Patents
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- Publication number
- JP2018019074A5 JP2018019074A5 JP2017124719A JP2017124719A JP2018019074A5 JP 2018019074 A5 JP2018019074 A5 JP 2018019074A5 JP 2017124719 A JP2017124719 A JP 2017124719A JP 2017124719 A JP2017124719 A JP 2017124719A JP 2018019074 A5 JP2018019074 A5 JP 2018019074A5
- Authority
- JP
- Japan
- Prior art keywords
- metal oxide
- oxide layer
- region
- oxide
- band gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims 64
- 150000004706 metal oxides Chemical class 0.000 claims 64
- 239000012212 insulator Substances 0.000 claims 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 12
- 229910052738 indium Inorganic materials 0.000 claims 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 12
- 229910052725 zinc Inorganic materials 0.000 claims 12
- 239000011701 zinc Substances 0.000 claims 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 6
- 229910052684 Cerium Inorganic materials 0.000 claims 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 6
- 229910052779 Neodymium Inorganic materials 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 6
- 229910052790 beryllium Inorganic materials 0.000 claims 6
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical group [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 6
- 229910052796 boron Inorganic materials 0.000 claims 6
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 6
- 229910052802 copper Inorganic materials 0.000 claims 6
- 239000010949 copper Chemical group 0.000 claims 6
- 229910052733 gallium Inorganic materials 0.000 claims 6
- 229910052732 germanium Inorganic materials 0.000 claims 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 6
- 229910052735 hafnium Inorganic materials 0.000 claims 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 6
- 229910052742 iron Inorganic materials 0.000 claims 6
- 229910052746 lanthanum Inorganic materials 0.000 claims 6
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 6
- 229910052749 magnesium Inorganic materials 0.000 claims 6
- 239000011777 magnesium Substances 0.000 claims 6
- 229910052750 molybdenum Inorganic materials 0.000 claims 6
- 239000011733 molybdenum Chemical group 0.000 claims 6
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 6
- 229910052759 nickel Inorganic materials 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Chemical group 0.000 claims 6
- 229910052715 tantalum Inorganic materials 0.000 claims 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 6
- 229910052719 titanium Inorganic materials 0.000 claims 6
- 239000010936 titanium Chemical group 0.000 claims 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 239000010937 tungsten Substances 0.000 claims 6
- 229910052720 vanadium Inorganic materials 0.000 claims 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical group [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 6
- 229910052727 yttrium Inorganic materials 0.000 claims 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 6
- 229910052726 zirconium Inorganic materials 0.000 claims 6
- 230000015572 biosynthetic process Effects 0.000 claims 2
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016127106 | 2016-06-27 | ||
| JP2016127106 | 2016-06-27 | ||
| JP2016140981 | 2016-07-18 | ||
| JP2016140981 | 2016-07-18 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020192553A Division JP2021036615A (ja) | 2016-06-27 | 2020-11-19 | トランジスタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018019074A JP2018019074A (ja) | 2018-02-01 |
| JP2018019074A5 true JP2018019074A5 (https=) | 2019-06-20 |
| JP6798942B2 JP6798942B2 (ja) | 2020-12-09 |
Family
ID=60677919
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017124719A Expired - Fee Related JP6798942B2 (ja) | 2016-06-27 | 2017-06-27 | トランジスタおよび半導体装置 |
| JP2020192553A Withdrawn JP2021036615A (ja) | 2016-06-27 | 2020-11-19 | トランジスタ |
| JP2022137406A Withdrawn JP2022169759A (ja) | 2016-06-27 | 2022-08-31 | トランジスタ及び半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020192553A Withdrawn JP2021036615A (ja) | 2016-06-27 | 2020-11-19 | トランジスタ |
| JP2022137406A Withdrawn JP2022169759A (ja) | 2016-06-27 | 2022-08-31 | トランジスタ及び半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20170373195A1 (https=) |
| JP (3) | JP6798942B2 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102583770B1 (ko) * | 2016-09-12 | 2023-10-06 | 삼성디스플레이 주식회사 | 메모리 트랜지스터 및 이를 갖는 표시장치 |
| CN111615743A (zh) * | 2018-01-25 | 2020-09-01 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
| CN112005383A (zh) | 2018-03-12 | 2020-11-27 | 株式会社半导体能源研究所 | 金属氧化物以及包含金属氧化物的晶体管 |
| CN108878512B (zh) * | 2018-06-29 | 2020-08-25 | 云南大学 | 一种金属氧化物叠层场效应材料及其应用 |
| JP2020009960A (ja) * | 2018-07-11 | 2020-01-16 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US11031506B2 (en) * | 2018-08-31 | 2021-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor using oxide semiconductor |
| WO2020059026A1 (ja) * | 2018-09-18 | 2020-03-26 | シャープ株式会社 | 表示装置、および表示装置の製造方法 |
| US11211461B2 (en) * | 2018-12-28 | 2021-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
| KR20240154578A (ko) * | 2022-02-25 | 2024-10-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5489445B2 (ja) * | 2007-11-15 | 2014-05-14 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよびそれを用いた表示装置 |
| JP5382763B2 (ja) * | 2008-04-09 | 2014-01-08 | 独立行政法人産業技術総合研究所 | 半導体素子及びその製造方法と、該半導体素子を備えた電子デバイス |
| JP2010165922A (ja) * | 2009-01-16 | 2010-07-29 | Idemitsu Kosan Co Ltd | 電界効果型トランジスタ、電界効果型トランジスタの製造方法及び半導体素子の製造方法 |
| KR102929405B1 (ko) * | 2009-12-04 | 2026-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP5497417B2 (ja) * | 2009-12-10 | 2014-05-21 | 富士フイルム株式会社 | 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置 |
| KR101894821B1 (ko) * | 2009-12-11 | 2018-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101778224B1 (ko) * | 2010-10-12 | 2017-09-15 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
| KR20200052993A (ko) * | 2010-12-03 | 2020-05-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
| US8878174B2 (en) * | 2011-04-15 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit |
| US8952377B2 (en) * | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9059219B2 (en) * | 2012-06-27 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| KR102171650B1 (ko) * | 2012-08-10 | 2020-10-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US9614258B2 (en) * | 2012-12-28 | 2017-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and power storage system |
| JP6199581B2 (ja) * | 2013-03-08 | 2017-09-20 | 株式会社半導体エネルギー研究所 | 金属酸化物膜、及び半導体装置 |
| JP2016058708A (ja) * | 2014-09-11 | 2016-04-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の評価方法 |
| KR20170068511A (ko) * | 2014-10-06 | 2017-06-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
-
2017
- 2017-06-19 US US15/626,565 patent/US20170373195A1/en not_active Abandoned
- 2017-06-27 JP JP2017124719A patent/JP6798942B2/ja not_active Expired - Fee Related
-
2020
- 2020-11-19 JP JP2020192553A patent/JP2021036615A/ja not_active Withdrawn
-
2022
- 2022-08-31 JP JP2022137406A patent/JP2022169759A/ja not_active Withdrawn
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