CN103715259B - 包括石墨烯沟道的隧穿场效应晶体管 - Google Patents

包括石墨烯沟道的隧穿场效应晶体管 Download PDF

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CN103715259B
CN103715259B CN201310221610.XA CN201310221610A CN103715259B CN 103715259 B CN103715259 B CN 103715259B CN 201310221610 A CN201310221610 A CN 201310221610A CN 103715259 B CN103715259 B CN 103715259B
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许镇盛
朴晟准
卞卿溵
D.徐
宋伣在
李载昊
郑现钟
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Samsung Electronics Co Ltd
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Abstract

提供包括石墨烯沟道的隧穿场效应晶体管(TFET)。该TFET包括：在基板上的第一电极；在第一电极上的半导体层；在半导体层上的石墨烯沟道，该石墨烯沟道朝向与第一电极相邻的第一区域延伸；在石墨烯沟道上的第二电极，该第二电极在第一区域上；覆盖石墨烯沟道的栅绝缘层；以及在栅绝缘层上的栅电极。第一电极和石墨烯沟道设置为彼此面对，半导体层设置在其间。

Description

包括石墨烯沟道的隧穿场效应晶体管
技术领域
本公开涉及包括石墨烯沟道的隧穿场效应晶体管（TFET），更具体而言，涉及其中栅电压通过石墨烯沟道与电极之间的半导体被施加到隧穿载流子的TFET。
背景技术
近来具有二维六方碳结构的石墨烯已经作为代替半导体的新材料受到关注，因而对于石墨烯的研究在全球正被积极地进行。当具有零带隙半导体的石墨烯被制成具有小于或等于10nm的宽度的石墨烯纳米带（GNR）时，由于尺寸效应，在GNR中形成带隙，因而，在室温下操作的场效应晶体管（FET）可以使用GNR制备。
在制备使用GNR的石墨烯晶体管时，石墨烯晶体管的开/关比增大，但是GNR中的迁移率由于GNR的紊乱边缘而大大减小并且石墨烯晶体管的导通电流低。备选地，垂直电场可以被施加到双层石墨烯以形成带隙。然而，难以执行该方法，因为难以使用大面积化学气相沉积（CVD）生长均匀的双层石墨烯并且由于随机的域（domain）而难以实现该方法。
发明内容
提供包括石墨烯沟道的隧穿场效应晶体管（TFET），其通过施加栅电压提供控制隧穿通过石墨烯沟道与电极之间的半导体的电流的器件。
额外的方面将在以下的描述中被部分地阐述且部分将通过该描述明显或者可以通过所给出的实施方式的实践而习知。
根据示例实施方式，一种包括可调势垒的石墨烯开关器件包括：在基板 上的第一电极；在第一电极上的半导体层；在半导体层上的石墨烯沟道，该 石墨烯沟道延伸到基板上的与第一电极相邻的第一区域；在石墨烯沟道上的 第二电极，该第二电极设置在第一区域上；覆盖石墨烯沟道的栅绝缘层；以 及在栅绝缘层上的栅电极，其中第一电极的一部分和石墨烯沟道设置为彼此面对，半导体层设置在其间。
第一区域还可以包括形成在石墨烯沟道与基板之间的第一绝缘层。
第一电极可以包括主体部分和从主体部分朝向第一区域在半导体层下面延伸的延伸部分，第一电极的所述部分是延伸部分。
半导体层可以包括镓铟锌氧化物（GIZO）、a-Si、Si、HIZO、MoS2、CdSe、 ZnO、AlP、InP、SrTiO3、Ge、GaAs、SiC、AlAs、GaN、CdTe、CuO、NiO 或GaMnAs。
延伸部分的厚度可以比主体部分的厚度薄。
半导体层可以具有在大约1nm到大约30nm范围内的厚度。
第一电极可以包括Pt、Ni、Au、Pd、Co、Be、Cu、Re、Ru、Fe、W、 Sb、Mo、Ag或Cr。
上述晶体管可以是具有与半导体层的杂质的极性相同的极性的单极性晶体管。
根据施加到栅电极的栅电压，在第一电极和石墨烯沟道之间形成的半导体层的能带的隧穿厚度可以是可变的。
石墨烯沟道可以由1至4层石墨烯组成。
第一能量势垒可以形成在半导体层与第一电极之间的界面和半导体层与石墨烯沟道之间的界面两者之一处。
在半导体层与第一电极之间的界面和半导体层与所述石墨烯之间的界面两者中的另一个处，形成比第一能量势垒低的第二能量势垒。
第二能量势垒可以小于或等于0.3eV。
附图说明
通过结合附图对实施方式的以下描述，这些和/或其它方面将变得明显且更易于理解，在附图中：
图1是示出根据本发明实施方式的包括石墨烯沟道的隧穿场效应晶体管（TFET）的截面图；
图2A至图2C是描述图1的TFET的操作的能带图；以及
图3是示出根据本发明实施方式的包括石墨烯沟道的TFET的I-V特性的曲线图。
具体实施方式
现在将详细参考实施方式，其实例在附图中示出，其中相同的参考标记始终表示相同的元件。在这点上，本实施方式可具有不同的形式并且不应被理解为限于在此阐述的描述。因此，以下仅通过参考附图描述实施方式来说明本说明书的多个方面。
图1是示出根据本发明实施方式的包括石墨烯沟道的隧穿场效应晶体管（TFET）100的截面图。
参考图1，第一电极120设置在基板110上，第一绝缘层130形成在与第一电极相邻的区域中。第一电极120包括主体部分122和延伸到第一绝缘层130的延伸部分124。延伸部分124的一端与第一绝缘层130相邻地设置。延伸部分124可以比主体部分122薄。
半导体层140形成在延伸部分124上，石墨烯沟道150形成在半导体层 140上。石墨烯沟道150延伸到第一绝缘层130上。在石墨烯沟道150上，第二电极160形成为面对第一绝缘层130。
栅绝缘层170形成在基板110上，该栅绝缘层170覆盖一部分第一电极 120和一部分石墨烯沟道150以及一部分第二电极160。栅电极180形成在栅绝缘层170上。栅电极180形成为与石墨烯沟道150相应。
第一绝缘层130可以由硅氧化物或硅氮化物形成。
基板110可以由玻璃、塑料、半导体等形成。
半导体层140可以由镓铟锌氧化物（GIZO）、非晶Si、Si、HIZO、MoS2、 CdSe、ZnO、AlP、InP、SrTiO3、Ge、GaAs、SiC、AlAs、GaN、CdTe、CuO、 NiO、GaMnAs等形成。半导体层140在与第一电极120或石墨烯沟道150 的一个界面处形成第一能量势垒，并且在与石墨烯沟道150或第一电极120 的另一界面处不形成能量势垒或者形成比第一能量势垒低的第二能量势垒。第二能量势垒可以小于或等于0.3eV。
半导体层140可以形成为载流子可以隧穿通过的厚度，例如在大约1nm 到大约30nm范围内的厚度。
半导体层140用n型杂质或p型杂质中的任一种掺杂。如图1所示，半导体层140被设置为面对栅电极180，其中石墨烯沟道150在半导体层140 与栅电极180之间。因此，半导体层140的能带会受栅电压影响。
第一电极120可以由与半导体层140形成能量势垒的材料形成。第一电极120可以由铂（Pt）、镍（Ni）、金（Au）钯（Pd）、钴（Co）、铍（Be）、铼（Re）、钌（Ru）、铁（Fe）、钨（W）、锑（Sb）、钼（Mo）、银（Ag）、铬（Cr）等形成。
石墨烯沟道150可以使用通过化学气相沉积（CVD）制造的石墨烯形成。石墨烯沟道150可以由1至4层石墨烯组成。石墨烯沟道150是载流子移动通过的通道，石墨烯沟道150的带隙可以是零或者小于或等于30meV。
第二电极160可以由一般金属或多晶硅等形成。第二电极160可以由与第一电极120相同的金属形成。
栅绝缘层170可以由硅氧化物或硅氮化物形成。
栅电极180可以由一般金属或多晶硅形成。此外，栅电极180可以由透明导电材料，例如金属氧化物诸如ITO形成。
由于发生载流子迁移的区域增加，其中半导体层140和石墨烯沟道150 顺序地形成在第一电极120的延伸部分124上的垂直结构具有载流子沿着其移动的增加的通道。因此，载流子的迁移率可以被改善，而且载流子的移动量也被提高。
第一绝缘层130被设计为防止载流子从第二电极160流到基板110，在基板110由绝缘材料形成时，可以从该结构省略第一绝缘层130。
包括石墨烯沟道150的TFET100可以是根据半导体层140的极性是n 型晶体管或者是p型晶体管的单极性晶体管。也就是说，当半导体层140用 n型杂质掺杂时，TFET100变成n型晶体管，当半导体层140用p型杂质掺杂时，TFET100变成p型晶体管。
图2A至图2C是描述TFET100的操作的能带图。这里，第一电极120 由Pt形成，半导体层140由GIZO形成。半导体层140用n型杂质掺杂，因此，场效应晶体管是n型晶体管。氢（H）被用作n型杂质，但是空隙可以被用来代替氢。GIZO的厚度大约是20nm，Ga:In:Zn的原子比是0.391:0.176: 0.433。
图2A是施加电压和栅电压之前的能带图。在半导体层140的相反两侧，石墨烯沟道150和第一电极120的能带结构被设置为分别与其功函数相应。在下文中，将描述包括用n型杂质掺杂的半导体层140的n型TFET100。场效应晶体管的多数载流子是电子。
在石墨烯沟道150和半导体层140之间没有能量势垒。代替地，具有1.0 eV的高度（H1）的能量势垒（Eb）形成在石墨烯沟道150和第一电极120 之间。第一电极120可以用作源电极。在图中示出的EF指的是石墨烯沟道 150的费米能级。
图2B是当负电压被施加到第一电极120时的能带图。在负电压被施加到第一电极120时，第一电极120的费米能级如虚线所示出地相对增加。虽然能量势垒（Eb）的高度（H1）未改变，但是半导体层140的能带的隧穿厚度减小。在此，电子没有从第一电极120隧穿通过半导体层140的能带。
图2C是正栅电压被施加到栅电极180时的能带图。由于正栅电压的施加，石墨烯沟道150的费米能级增加。如图2C中的虚线所示出的，半导体层140的能级与石墨烯沟道150相比相对较低。因此，半导体层140的能带的隧穿厚度减少，因此电子通过从第一电极120隧穿通过半导体层140而移到石墨烯沟道150。
在正电压渐增地施加到栅电极180时，电子容易移动，因而，TFET100 中的电流也增加。
图3是示出包括石墨烯沟道的TFET的I-V特性的曲线图。第一电极由 Pt形成，半导体层由GIZO形成。半导体层用n型杂质掺杂，因此，场效应晶体管是n型晶体管。
参考图3，-9V到9V范围内的栅电压被施加到晶体管。如图3所示，当栅电压增加时，漏电流（Id）增加。此外，如图3所示，漏电流（Id）可以基于施加到第一电极120的电压Vd（V）的大小而增加。
以上已经描述了n型TFET100的操作，但是在p型TFET中，载流子可以是空穴并且施加负栅电压以导通晶体管。此处将省略其详细说明。
此外，当在石墨烯沟道和半导体层之间的界面处的能量势垒大于在半导体层和第一电极之间的界面处的能量势垒时，源漏电压相反地施加并且载流子从第二电极移到第一电极。在此将省略其详细说明。
如上所述，根据本发明的一个或多个实施方式，包括石墨烯沟道的TFET 可以将亚阈值摆幅降至小于60mV/dec，因此具有低驱动电压，因而，可以通过使用石墨烯的高迁移率而改善驱动速度。
应该理解，在此描述的示例性实施方式仅应该以说明性含义被理解，而不是用于限制目的。在每个实施方式内的特征或方面的描述通常应被理解为可用于其它实施方式中的其它类似特征或方面。
本申请要求于2012年10月9日在韩国知识产权局提交的韩国专利申请 No.10-2012-0112087的优先权，其公开通过引用整体结合在此。

Claims (12)

1.一种隧穿场效应晶体管，包括：
在基板上的第一电极；
在所述第一电极上的半导体层；
在所述半导体层上的石墨烯沟道，所述石墨烯沟道延伸到所述基板上的与所述第一电极相邻的第一区域；
在所述石墨烯沟道上的第二电极，所述第二电极设置在所述第一区域上；
覆盖所述石墨烯沟道的栅绝缘层；以及
在所述栅绝缘层上的栅电极，
其中所述第一电极的一部分和所述石墨烯沟道设置为彼此面对，所述半导体层设置在其间，
其中所述第一电极包括主体部分和从所述主体部分朝向所述第一区域在所述半导体层下面延伸的延伸部分，所述第一电极的所述部分是延伸部分。
2.根据权利要求1所述的隧穿场效应晶体管，还包括在所述第一区域上位于所述石墨烯沟道和所述基板之间的第一绝缘层。
3.根据权利要求1所述的隧穿场效应晶体管，其中所述延伸部分的厚度比所述主体部分的厚度薄。
4.根据权利要求1所述的隧穿场效应晶体管，其中所述半导体层包括从由镓铟锌氧化物(GIZO)、a-Si、Si、HIZO、MoS2、CdSe、ZnO、AlP、InP、SrTiO3、Ge、GaAs、SiC、AlAs、GaN、CdTe、CuO、NiO和GaMnAs组成的组中选出的至少一种。
5.根据权利要求1所述的隧穿场效应晶体管，其中所述半导体层的厚度在1nm到30nm的范围内。
6.根据权利要求1所述的隧穿场效应晶体管，其中所述第一电极包括从由Pt、Ni、Au、Pd、Co、Be、Cu、Re、Ru、Fe、W、Sb、Mo、Ag和Cr组成的组中选出的至少一种。
7.根据权利要求1所述的隧穿场效应晶体管，其中所述晶体管是具有与所述半导体层的杂质的极性相同的极性的单极性晶体管。
8.根据权利要求1所述的隧穿场效应晶体管，其中根据施加到所述栅电极的栅电压，在所述第一电极和所述石墨烯沟道之间的所述半导体层的能带的隧穿厚度是可变的。
9.根据权利要求1所述的隧穿场效应晶体管，所述石墨烯沟道由1至4层石墨烯组成。
10.根据权利要求1所述的隧穿场效应晶体管，其中第一能量势垒形成在所述半导体层与所述第一电极之间的界面和所述半导体层与所述石墨烯沟道之间的界面两者之一处。
11.根据权利要求10所述的隧穿场效应晶体管，其中在所述半导体层与所述第一电极之间的所述界面处和所述半导体层与所述石墨烯之间的所述界面两者中的另一个处，形成比所述第一能量势垒低的第二能量势垒。
12.根据权利要求11所述的隧穿场效应晶体管，其中所述第二能量势垒小于或等于0.3eV。
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