JP6487061B2 - フィン型電界効果トランジスタ - Google Patents
フィン型電界効果トランジスタ Download PDFInfo
- Publication number
- JP6487061B2 JP6487061B2 JP2017550463A JP2017550463A JP6487061B2 JP 6487061 B2 JP6487061 B2 JP 6487061B2 JP 2017550463 A JP2017550463 A JP 2017550463A JP 2017550463 A JP2017550463 A JP 2017550463A JP 6487061 B2 JP6487061 B2 JP 6487061B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- channel region
- channel
- fin
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005669 field effect Effects 0.000 title description 4
- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 29
- 238000002955 isolation Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 230000007423 decrease Effects 0.000 claims description 4
- 230000003796 beauty Effects 0.000 claims 1
- 239000013590 bulk material Substances 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 127
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
- H01L29/7854—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection with rounded corners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7856—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with an non-uniform gate, e.g. varying doping structure, shape or composition on different sides of the fin, or different gate insulator thickness or composition on opposing fin sides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/6681—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
204 基板
208 埋込フィン部
212 分離領域
216 有効フィン部
216A チャネル領域
216S ソース領域
216D ドレイン領域
220 ゲート誘電体
224 ゲート電極
228 側壁
Claims (18)
- 半導体基板と、
前記半導体基板に形成された分離領域と、
前記分離領域の上に垂直に突出し、かつ第1の方向に横方向に延在するフィン型半導体構造体と、
前記フィン型半導体構造体のチャネル領域を取り囲むゲート誘電体および前記ゲート誘電体を取り囲むゲート電極であって、前記チャネル領域がソース領域とドレイン領域との間に第1の方向に挟まれている、ゲート誘電体およびゲート電極と、を備える半導体デバイスであって、
前記チャネル領域が、傾斜した側壁および前記チャネル領域のベースからピークに向かって連続的に減少する幅を有し、
前記チャネル領域が、3nmから4nmの間の最小幅および4nmから8nmの間の最大幅を有する非ドープ体積反転領域を含み、前記体積反転領域が前記フィン型半導体構造体の頂点から下方に延びる高さを有し、前記高さが前記チャネル領域の全高の25%を超え、
前記体積反転領域が、反転条件の下で、対向する傾斜した側壁から延びる表面空乏領域が重複する領域を含む、半導体デバイス。 - 前記チャネル領域の全高が34nmを超えない、請求項1に記載の半導体デバイス。
- 前記チャネル領域が16nmを超えない最大ベース幅を有する、請求項2に記載の半導体デバイス。
- 前記体積反転領域の高さが前記チャネル領域の全高の50%より高い、請求項3に記載の半導体デバイス。
- 前記チャネル領域が前記体積反転領域の上に形成された量子閉込領域をさらに備え、前記量子閉込領域が前記チャネル領域の全高の20%を超えない、請求項3に記載の半導体デバイス。
- 前記チャネル領域が、前記体積反転領域の下に形成されかつ前記チャネル領域の全高の残りの高さであり前記チャネル領域の全高の70%を超えない高さを有する表面反転領域をさらに備える、請求項5に記載の半導体デバイス。
- 前記体積反転領域が、反転条件の下で、前記第1の方向を横切る第2の方向において前記チャネル領域を通して前記体積反転領域の伝導帯および価電子帯エネルギー(EC,EV)がバルク半導体材料の伝導帯および価電子帯エネルギー(EC,BULK,EV,BULK)未満であるようなドーピングレベルを有する、請求項5に記載の半導体デバイス。
- 前記フィン型半導体構造体がバルク半導体基板の連続拡張部を形成する、請求項1に記載の半導体デバイス。
- 各々がチャネル領域を有する複数のフィン型半導体構造体をさらに備え、前記ゲート誘電体が前記チャネル領域の各々を取り囲み、前記ゲート電極が前記ゲート誘電体を取り囲む、請求項1に記載の半導体デバイス。
- 半導体基板と、
第1の方向に横方向に延在し、隣接する分離領域の上に突出する突出部を有するフィン型半導体構造体と、
前記突出部のチャネル領域上に形成されたゲートスタックであって、前記チャネル領域がソース領域とドレイン領域との間に横方向に挟まれ、前記ゲートスタックが前記チャネル領域上に形成されたゲート誘電体および前記ゲート誘電体上に形成されたゲート電極を含む、ゲートスタックと、を備える半導体デバイスであって、
前記チャネル領域が34nmを超えない垂直高さ、および16nmを超えないベース幅を有し、前記チャネル領域が前記チャネル領域の垂直高さの少なくとも25%である台形体積反転領域を有するように前記チャネル領域がテーパー状の対向する側壁を有し、
前記体積反転領域が、反転バイアスが前記ゲート電極に印加されたときに、前記体積反転領域内の伝導帯および価電子帯エネルギー(EC,EV)が前記チャネル領域の幅を通して前記チャネル領域のバルク材料の対応するバルク伝導帯および価電子帯エネルギー(EC,BULK,EV,BULK)を下回るようなドーピング濃度および物理的寸法を有し、前記チャネル領域の幅が前記第1の方向を横切る第2の方向に延びる、半導体デバイス。 - 前記チャネル領域がドープされていない、請求項10に記載の半導体デバイス。
- 前記チャネル領域が、前記チャネル領域と重複する前記ゲート電極の幅によって画定される第2の方向におけるゲート長を有し、前記チャネル領域のベース幅が前記ゲート長の80%から200%の間である、請求項11に記載の半導体デバイス。
- 前記体積反転領域が、3nmから5nmの間の最小幅および4nmから8nmの間の最大幅を有する、請求項12に記載の半導体デバイス。
- 前記テーパー状の側壁が、半導体の主表面に垂直な方向に対して88から80°の間の角度をなす、請求項13に記載の半導体デバイス。
- 前記ゲート電極と前記基板との間に0.2Vから0.8Vの間である体積反転バイアスを形成するように前記体積反転領域が構成されている、請求項13に記載の半導体デバイス。
- 前記フィン型半導体構造体が<100>方向に延在し、前記チャネル領域がnチャネルFinFETトランジスタのnチャネルを形成する、請求項13に記載の半導体デバイス。
- 前記フィン型半導体構造体が<110>方向に延在し、前記チャネル領域がpチャネルFinFETトランジスタのpチャネルを形成する、請求項13に記載の半導体デバイス。
- 台形の前記体積反転領域が前記チャネル領域の垂直高さの50%から90%の間である、請求項13に記載の半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/570,982 US9666716B2 (en) | 2014-12-15 | 2014-12-15 | FinFET transistor |
US14/570,982 | 2014-12-15 | ||
PCT/US2015/063517 WO2016099895A1 (en) | 2014-12-15 | 2015-12-02 | A finfet transistor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019027292A Division JP6833882B2 (ja) | 2014-12-15 | 2019-02-19 | フィン型電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017539098A JP2017539098A (ja) | 2017-12-28 |
JP6487061B2 true JP6487061B2 (ja) | 2019-03-20 |
Family
ID=56111965
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017550463A Active JP6487061B2 (ja) | 2014-12-15 | 2015-12-02 | フィン型電界効果トランジスタ |
JP2019027292A Active JP6833882B2 (ja) | 2014-12-15 | 2019-02-19 | フィン型電界効果トランジスタ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019027292A Active JP6833882B2 (ja) | 2014-12-15 | 2019-02-19 | フィン型電界効果トランジスタ |
Country Status (5)
Country | Link |
---|---|
US (4) | US9666716B2 (ja) |
JP (2) | JP6487061B2 (ja) |
KR (2) | KR102014994B1 (ja) |
CN (1) | CN107112352B (ja) |
WO (1) | WO2016099895A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100843244B1 (ko) * | 2007-04-19 | 2008-07-02 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US9666716B2 (en) * | 2014-12-15 | 2017-05-30 | Sang U. Kim | FinFET transistor |
WO2016105348A1 (en) * | 2014-12-22 | 2016-06-30 | Intel Corporation | Optimizing gate profile for performance and gate fill |
KR102284888B1 (ko) * | 2015-01-15 | 2021-08-02 | 삼성전자주식회사 | 반도체 장치 |
CN106531630B (zh) * | 2015-09-09 | 2022-02-01 | 联华电子股份有限公司 | 半导体制作工艺、平面场效晶体管及鳍状场效晶体管 |
US9953883B2 (en) * | 2016-04-11 | 2018-04-24 | Samsung Electronics Co., Ltd. | Semiconductor device including a field effect transistor and method for manufacturing the same |
CN108133946B (zh) * | 2016-12-01 | 2020-10-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
US10930738B2 (en) | 2017-06-29 | 2021-02-23 | Intel Corporation | Sub-fin leakage control in semicondcutor devices |
KR102446403B1 (ko) * | 2018-06-22 | 2022-09-21 | 삼성전자주식회사 | 반도체 장치, 반도체 장치의 제조 방법 및 반도체 장치의 레이아웃 디자인 방법 |
DE102019117176A1 (de) * | 2018-09-27 | 2020-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Finfet-bauelement und verfahren zum ausbilden desselben |
KR20210018573A (ko) * | 2019-08-05 | 2021-02-18 | 삼성전자주식회사 | 활성 영역 및 게이트 구조물을 갖는 반도체 소자 |
US11328957B2 (en) | 2020-02-25 | 2022-05-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN113851530B (zh) * | 2021-09-07 | 2024-02-02 | 上海集成电路装备材料产业创新中心有限公司 | 鳍式半导体器件及其制备方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7045401B2 (en) | 2003-06-23 | 2006-05-16 | Sharp Laboratories Of America, Inc. | Strained silicon finFET device |
US7531423B2 (en) * | 2005-12-22 | 2009-05-12 | International Business Machines Corporation | Reduced-resistance finFETs by sidewall silicidation and methods of manufacturing the same |
JP2008300384A (ja) * | 2007-05-29 | 2008-12-11 | Elpida Memory Inc | 半導体装置及びその製造方法 |
CN104025293B (zh) * | 2011-10-18 | 2018-06-08 | 英特尔公司 | 利用非平面拓扑的反熔丝元件 |
KR101823105B1 (ko) * | 2012-03-19 | 2018-01-30 | 삼성전자주식회사 | 전계 효과 트랜지스터의 형성 방법 |
JP2014063929A (ja) * | 2012-09-21 | 2014-04-10 | Toshiba Corp | 半導体装置およびその製造方法 |
US20140103437A1 (en) * | 2012-10-15 | 2014-04-17 | Gold Standard Simulations Ltd. | Random Doping Fluctuation Resistant FinFET |
KR20140052734A (ko) | 2012-10-25 | 2014-05-07 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
US8765533B2 (en) * | 2012-12-04 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin-like field effect transistor (FinFET) channel profile engineering method and associated device |
EP2775528B1 (en) * | 2013-03-05 | 2019-07-17 | IMEC vzw | Passivated III-V or Ge fin-shaped field effect transistor |
US9054044B2 (en) | 2013-03-07 | 2015-06-09 | Globalfoundries Inc. | Method for forming a semiconductor device and semiconductor device structures |
CN103199053B (zh) | 2013-04-12 | 2015-08-19 | 矽力杰半导体技术(杭州)有限公司 | 沟槽的形成方法及半导体结构 |
US9024368B1 (en) * | 2013-11-14 | 2015-05-05 | Globalfoundries Inc. | Fin-type transistor structures with extended embedded stress elements and fabrication methods |
US9570561B2 (en) * | 2014-02-13 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Modified channel position to suppress hot carrier injection in FinFETs |
US9391200B2 (en) * | 2014-06-18 | 2016-07-12 | Stmicroelectronics, Inc. | FinFETs having strained channels, and methods of fabricating finFETs having strained channels |
US9666716B2 (en) * | 2014-12-15 | 2017-05-30 | Sang U. Kim | FinFET transistor |
-
2014
- 2014-12-15 US US14/570,982 patent/US9666716B2/en active Active
-
2015
- 2015-12-02 KR KR1020177019925A patent/KR102014994B1/ko active IP Right Grant
- 2015-12-02 WO PCT/US2015/063517 patent/WO2016099895A1/en active Application Filing
- 2015-12-02 CN CN201580068291.0A patent/CN107112352B/zh active Active
- 2015-12-02 JP JP2017550463A patent/JP6487061B2/ja active Active
- 2015-12-02 KR KR1020197024508A patent/KR102107956B1/ko active IP Right Grant
-
2017
- 2017-05-26 US US15/607,054 patent/US10490665B2/en active Active
-
2019
- 2019-02-19 JP JP2019027292A patent/JP6833882B2/ja active Active
- 2019-10-21 US US16/659,264 patent/US11211494B2/en active Active
-
2021
- 2021-12-15 US US17/551,712 patent/US11908941B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170263750A1 (en) | 2017-09-14 |
JP2019075590A (ja) | 2019-05-16 |
CN107112352B (zh) | 2021-10-26 |
KR20170100567A (ko) | 2017-09-04 |
US20200052108A1 (en) | 2020-02-13 |
US20160172445A1 (en) | 2016-06-16 |
KR20190101493A (ko) | 2019-08-30 |
KR102014994B1 (ko) | 2019-08-27 |
US9666716B2 (en) | 2017-05-30 |
WO2016099895A1 (en) | 2016-06-23 |
US20220109067A1 (en) | 2022-04-07 |
CN107112352A (zh) | 2017-08-29 |
KR102107956B1 (ko) | 2020-05-07 |
US10490665B2 (en) | 2019-11-26 |
JP2017539098A (ja) | 2017-12-28 |
US11908941B2 (en) | 2024-02-20 |
US11211494B2 (en) | 2021-12-28 |
JP6833882B2 (ja) | 2021-02-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6487061B2 (ja) | フィン型電界効果トランジスタ | |
US10629501B2 (en) | Gate all-around semiconductor device including a first nanowire structure and a second nanowire structure | |
JP4108537B2 (ja) | 半導体装置 | |
Datta | Recent advances in high performance CMOS transistors: From planar to non-planar | |
US20110254102A1 (en) | Hybrid orientation inversion mode gaa cmosfet | |
US20080303095A1 (en) | Varying mugfet width to adjust device characteristics | |
US20110254099A1 (en) | Hybrid material accumulation mode GAA CMOSFET | |
US20110254013A1 (en) | Hybrid orientation accumulation mode gaa cmosfet | |
US20110254100A1 (en) | Hybrid material accumulation mode gaa cmosfet | |
US20200251568A1 (en) | Gate-all-around field effect transistor having multiple threshold voltages | |
US20110254101A1 (en) | Hybrid material inversion mode gaa cmosfet | |
CN107221499B (zh) | 包括InGaAs沟道的FET装置及制造该FET装置的方法 | |
WO2016029711A1 (zh) | 一种隧穿场效应晶体管及其制作方法 | |
US11245020B2 (en) | Gate-all-around field effect transistor having multiple threshold voltages | |
KR102131902B1 (ko) | 터널링 전계효과 트랜지스터 및 이의 제조방법 | |
Balhara et al. | Design and analysis of double gate MOSFET devices using high-k dielectric | |
Kaundal et al. | Physical insights on scaling of Gaussian channel design junctionless FinFET | |
TWI527228B (zh) | 多閘極電晶體元件 | |
CN104952730B (zh) | 半导体结构及其形成方法 | |
Tripathi | Low Power High Performance Multi-Gate Mosfet Structures | |
Tomioka | Several Challenges in Steep-Slope Tunnel Field-Effect Transistors | |
Das et al. | Dual stacked gate dielectric source/oxide overlap Si/Ge FinFETs: Proposal and analysis |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180730 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20181029 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181226 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190121 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190220 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6487061 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |