JP6798942B2 - トランジスタおよび半導体装置 - Google Patents

トランジスタおよび半導体装置 Download PDF

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Publication number
JP6798942B2
JP6798942B2 JP2017124719A JP2017124719A JP6798942B2 JP 6798942 B2 JP6798942 B2 JP 6798942B2 JP 2017124719 A JP2017124719 A JP 2017124719A JP 2017124719 A JP2017124719 A JP 2017124719A JP 6798942 B2 JP6798942 B2 JP 6798942B2
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Japan
Prior art keywords
oxide
insulator
metal oxide
oxide layer
transistor
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Expired - Fee Related
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JP2017124719A
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English (en)
Japanese (ja)
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JP2018019074A (ja
JP2018019074A5 (https=
Inventor
山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
JP2017124719A 2016-06-27 2017-06-27 トランジスタおよび半導体装置 Expired - Fee Related JP6798942B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016127106 2016-06-27
JP2016127106 2016-06-27
JP2016140981 2016-07-18
JP2016140981 2016-07-18

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020192553A Division JP2021036615A (ja) 2016-06-27 2020-11-19 トランジスタ

Publications (3)

Publication Number Publication Date
JP2018019074A JP2018019074A (ja) 2018-02-01
JP2018019074A5 JP2018019074A5 (https=) 2019-06-20
JP6798942B2 true JP6798942B2 (ja) 2020-12-09

Family

ID=60677919

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2017124719A Expired - Fee Related JP6798942B2 (ja) 2016-06-27 2017-06-27 トランジスタおよび半導体装置
JP2020192553A Withdrawn JP2021036615A (ja) 2016-06-27 2020-11-19 トランジスタ
JP2022137406A Withdrawn JP2022169759A (ja) 2016-06-27 2022-08-31 トランジスタ及び半導体装置

Family Applications After (2)

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JP2020192553A Withdrawn JP2021036615A (ja) 2016-06-27 2020-11-19 トランジスタ
JP2022137406A Withdrawn JP2022169759A (ja) 2016-06-27 2022-08-31 トランジスタ及び半導体装置

Country Status (2)

Country Link
US (1) US20170373195A1 (https=)
JP (3) JP6798942B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102583770B1 (ko) * 2016-09-12 2023-10-06 삼성디스플레이 주식회사 메모리 트랜지스터 및 이를 갖는 표시장치
CN111615743A (zh) * 2018-01-25 2020-09-01 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
CN112005383A (zh) 2018-03-12 2020-11-27 株式会社半导体能源研究所 金属氧化物以及包含金属氧化物的晶体管
CN108878512B (zh) * 2018-06-29 2020-08-25 云南大学 一种金属氧化物叠层场效应材料及其应用
JP2020009960A (ja) * 2018-07-11 2020-01-16 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11031506B2 (en) * 2018-08-31 2021-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor using oxide semiconductor
WO2020059026A1 (ja) * 2018-09-18 2020-03-26 シャープ株式会社 表示装置、および表示装置の製造方法
US11211461B2 (en) * 2018-12-28 2021-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
KR20240154578A (ko) * 2022-02-25 2024-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5489445B2 (ja) * 2007-11-15 2014-05-14 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
JP5382763B2 (ja) * 2008-04-09 2014-01-08 独立行政法人産業技術総合研究所 半導体素子及びその製造方法と、該半導体素子を備えた電子デバイス
JP2010165922A (ja) * 2009-01-16 2010-07-29 Idemitsu Kosan Co Ltd 電界効果型トランジスタ、電界効果型トランジスタの製造方法及び半導体素子の製造方法
KR102929405B1 (ko) * 2009-12-04 2026-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5497417B2 (ja) * 2009-12-10 2014-05-21 富士フイルム株式会社 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
KR101894821B1 (ko) * 2009-12-11 2018-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101778224B1 (ko) * 2010-10-12 2017-09-15 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
KR20200052993A (ko) * 2010-12-03 2020-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
US8878174B2 (en) * 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
US8952377B2 (en) * 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9059219B2 (en) * 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102171650B1 (ko) * 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9614258B2 (en) * 2012-12-28 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Power storage device and power storage system
JP6199581B2 (ja) * 2013-03-08 2017-09-20 株式会社半導体エネルギー研究所 金属酸化物膜、及び半導体装置
JP2016058708A (ja) * 2014-09-11 2016-04-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の評価方法
KR20170068511A (ko) * 2014-10-06 2017-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기

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Publication number Publication date
JP2018019074A (ja) 2018-02-01
JP2022169759A (ja) 2022-11-09
US20170373195A1 (en) 2017-12-28
JP2021036615A (ja) 2021-03-04

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