JP2018019072A5 - - Google Patents
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- Publication number
- JP2018019072A5 JP2018019072A5 JP2017122406A JP2017122406A JP2018019072A5 JP 2018019072 A5 JP2018019072 A5 JP 2018019072A5 JP 2017122406 A JP2017122406 A JP 2017122406A JP 2017122406 A JP2017122406 A JP 2017122406A JP 2018019072 A5 JP2018019072 A5 JP 2018019072A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- region
- metal oxide
- band gap
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910044991 metal oxide Inorganic materials 0.000 claims 33
- 150000004706 metal oxides Chemical class 0.000 claims 33
- 239000012212 insulator Substances 0.000 claims 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 10
- 229910052725 zinc Inorganic materials 0.000 claims 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 5
- 229910052684 Cerium Inorganic materials 0.000 claims 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 5
- 229910052779 Neodymium Inorganic materials 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 5
- 229910052782 aluminium Inorganic materials 0.000 claims 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 5
- 229910052790 beryllium Inorganic materials 0.000 claims 5
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical group [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 5
- 229910052796 boron Inorganic materials 0.000 claims 5
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 5
- 229910052802 copper Inorganic materials 0.000 claims 5
- 239000010949 copper Chemical group 0.000 claims 5
- 229910052733 gallium Inorganic materials 0.000 claims 5
- 229910052732 germanium Inorganic materials 0.000 claims 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 5
- 229910052735 hafnium Inorganic materials 0.000 claims 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 5
- 229910052742 iron Inorganic materials 0.000 claims 5
- 229910052746 lanthanum Inorganic materials 0.000 claims 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 5
- 229910052749 magnesium Chemical group 0.000 claims 5
- 239000011777 magnesium Chemical group 0.000 claims 5
- 229910052750 molybdenum Inorganic materials 0.000 claims 5
- 239000011733 molybdenum Chemical group 0.000 claims 5
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical group [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 5
- 229910052759 nickel Inorganic materials 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Chemical group 0.000 claims 5
- 229910052715 tantalum Inorganic materials 0.000 claims 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 5
- 229910052719 titanium Inorganic materials 0.000 claims 5
- 239000010936 titanium Chemical group 0.000 claims 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 5
- 229910052721 tungsten Inorganic materials 0.000 claims 5
- 239000010937 tungsten Chemical group 0.000 claims 5
- 229910052720 vanadium Inorganic materials 0.000 claims 5
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical group [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 5
- 229910052727 yttrium Inorganic materials 0.000 claims 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 5
- 229910052726 zirconium Inorganic materials 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 claims 2
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016127103 | 2016-06-27 | ||
| JP2016127103 | 2016-06-27 | ||
| JP2016140978 | 2016-07-18 | ||
| JP2016140978 | 2016-07-18 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018019072A JP2018019072A (ja) | 2018-02-01 |
| JP2018019072A5 true JP2018019072A5 (https=) | 2019-07-11 |
| JP6873840B2 JP6873840B2 (ja) | 2021-05-19 |
Family
ID=60677909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017122406A Expired - Fee Related JP6873840B2 (ja) | 2016-06-27 | 2017-06-22 | トランジスタ |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20170373194A1 (https=) |
| JP (1) | JP6873840B2 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111615743A (zh) * | 2018-01-25 | 2020-09-01 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
| CN112005383A (zh) | 2018-03-12 | 2020-11-27 | 株式会社半导体能源研究所 | 金属氧化物以及包含金属氧化物的晶体管 |
| US12051749B2 (en) * | 2020-06-23 | 2024-07-30 | Taiwan Semiconductor Manufacturing Company Limited | Interfacial dual passivation layer for a ferroelectric device and methods of forming the same |
| CN117121086A (zh) | 2021-04-22 | 2023-11-24 | 株式会社半导体能源研究所 | 显示装置 |
| EP4713973A1 (en) * | 2023-05-19 | 2026-03-25 | Versum Materials US, LLC | Device, system and method for optimizing characteristics of a transistor channel |
| KR102862663B1 (ko) * | 2024-03-28 | 2025-09-23 | 한국공학대학교산학협력단 | 인듐-텅스텐-아연 산화물(iwzo)을 포함하는 스태거드 바톰 게이트 구조의 박막 트랜지스터 및 그의 제조방법 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5489445B2 (ja) * | 2007-11-15 | 2014-05-14 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよびそれを用いた表示装置 |
| JP5346200B2 (ja) * | 2008-11-14 | 2013-11-20 | スタンレー電気株式会社 | ＺｎＯ系半導体層とその製造方法、ＺｎＯ系半導体発光素子、及びＺｎＯ系半導体素子 |
| JP2010165922A (ja) * | 2009-01-16 | 2010-07-29 | Idemitsu Kosan Co Ltd | 電界効果型トランジスタ、電界効果型トランジスタの製造方法及び半導体素子の製造方法 |
| JP5497417B2 (ja) * | 2009-12-10 | 2014-05-21 | 富士フイルム株式会社 | 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置 |
| JP2011138934A (ja) * | 2009-12-28 | 2011-07-14 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
| KR20200052993A (ko) * | 2010-12-03 | 2020-05-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
| US8952377B2 (en) * | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR102099261B1 (ko) * | 2012-08-10 | 2020-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR102171650B1 (ko) * | 2012-08-10 | 2020-10-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JP6283191B2 (ja) * | 2012-10-17 | 2018-02-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6329762B2 (ja) * | 2012-12-28 | 2018-05-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9231111B2 (en) * | 2013-02-13 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9373711B2 (en) * | 2013-02-27 | 2016-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6199581B2 (ja) * | 2013-03-08 | 2017-09-20 | 株式会社半導体エネルギー研究所 | 金属酸化物膜、及び半導体装置 |
| US9397153B2 (en) * | 2013-09-23 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI702187B (zh) * | 2014-02-21 | 2020-08-21 | 日商半導體能源研究所股份有限公司 | 半導體膜、電晶體、半導體裝置、顯示裝置以及電子裝置 |
-
2017
- 2017-06-19 US US15/626,556 patent/US20170373194A1/en not_active Abandoned
- 2017-06-22 JP JP2017122406A patent/JP6873840B2/ja not_active Expired - Fee Related
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