JP6873840B2 - トランジスタ - Google Patents

トランジスタ Download PDF

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Publication number
JP6873840B2
JP6873840B2 JP2017122406A JP2017122406A JP6873840B2 JP 6873840 B2 JP6873840 B2 JP 6873840B2 JP 2017122406 A JP2017122406 A JP 2017122406A JP 2017122406 A JP2017122406 A JP 2017122406A JP 6873840 B2 JP6873840 B2 JP 6873840B2
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Japan
Prior art keywords
oxide
insulator
region
conductor
transistor
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Expired - Fee Related
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JP2017122406A
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English (en)
Japanese (ja)
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JP2018019072A (ja
JP2018019072A5 (https=
Inventor
山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JP2018019072A publication Critical patent/JP2018019072A/ja
Publication of JP2018019072A5 publication Critical patent/JP2018019072A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2017122406A 2016-06-27 2017-06-22 トランジスタ Expired - Fee Related JP6873840B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016127103 2016-06-27
JP2016127103 2016-06-27
JP2016140978 2016-07-18
JP2016140978 2016-07-18

Publications (3)

Publication Number Publication Date
JP2018019072A JP2018019072A (ja) 2018-02-01
JP2018019072A5 JP2018019072A5 (https=) 2019-07-11
JP6873840B2 true JP6873840B2 (ja) 2021-05-19

Family

ID=60677909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017122406A Expired - Fee Related JP6873840B2 (ja) 2016-06-27 2017-06-22 トランジスタ

Country Status (2)

Country Link
US (1) US20170373194A1 (https=)
JP (1) JP6873840B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111615743A (zh) * 2018-01-25 2020-09-01 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
CN112005383A (zh) 2018-03-12 2020-11-27 株式会社半导体能源研究所 金属氧化物以及包含金属氧化物的晶体管
US12051749B2 (en) * 2020-06-23 2024-07-30 Taiwan Semiconductor Manufacturing Company Limited Interfacial dual passivation layer for a ferroelectric device and methods of forming the same
CN117121086A (zh) 2021-04-22 2023-11-24 株式会社半导体能源研究所 显示装置
EP4713973A1 (en) * 2023-05-19 2026-03-25 Versum Materials US, LLC Device, system and method for optimizing characteristics of a transistor channel
KR102862663B1 (ko) * 2024-03-28 2025-09-23 한국공학대학교산학협력단 인듐-텅스텐-아연 산화물(iwzo)을 포함하는 스태거드 바톰 게이트 구조의 박막 트랜지스터 및 그의 제조방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5489445B2 (ja) * 2007-11-15 2014-05-14 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
JP5346200B2 (ja) * 2008-11-14 2013-11-20 スタンレー電気株式会社 ＺｎＯ系半導体層とその製造方法、ＺｎＯ系半導体発光素子、及びＺｎＯ系半導体素子
JP2010165922A (ja) * 2009-01-16 2010-07-29 Idemitsu Kosan Co Ltd 電界効果型トランジスタ、電界効果型トランジスタの製造方法及び半導体素子の製造方法
JP5497417B2 (ja) * 2009-12-10 2014-05-21 富士フイルム株式会社 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
JP2011138934A (ja) * 2009-12-28 2011-07-14 Sony Corp 薄膜トランジスタ、表示装置および電子機器
KR20200052993A (ko) * 2010-12-03 2020-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
US8952377B2 (en) * 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102099261B1 (ko) * 2012-08-10 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102171650B1 (ko) * 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6283191B2 (ja) * 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 半導体装置
JP6329762B2 (ja) * 2012-12-28 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
US9231111B2 (en) * 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9373711B2 (en) * 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6199581B2 (ja) * 2013-03-08 2017-09-20 株式会社半導体エネルギー研究所 金属酸化物膜、及び半導体装置
US9397153B2 (en) * 2013-09-23 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI702187B (zh) * 2014-02-21 2020-08-21 日商半導體能源研究所股份有限公司 半導體膜、電晶體、半導體裝置、顯示裝置以及電子裝置

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Publication number Publication date
JP2018019072A (ja) 2018-02-01
US20170373194A1 (en) 2017-12-28

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