JP2017505530A5 - - Google Patents

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Publication number
JP2017505530A5
JP2017505530A5 JP2016532522A JP2016532522A JP2017505530A5 JP 2017505530 A5 JP2017505530 A5 JP 2017505530A5 JP 2016532522 A JP2016532522 A JP 2016532522A JP 2016532522 A JP2016532522 A JP 2016532522A JP 2017505530 A5 JP2017505530 A5 JP 2017505530A5
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JP
Japan
Prior art keywords
transistor
region
voltage
gate
current
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JP2016532522A
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English (en)
Japanese (ja)
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JP6219521B2 (ja
JP2017505530A (ja
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Priority claimed from US14/225,836 external-priority patent/US9601607B2/en
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Publication of JP2017505530A5 publication Critical patent/JP2017505530A5/ja
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Publication of JP6219521B2 publication Critical patent/JP6219521B2/ja
Expired - Fee Related legal-status Critical Current
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JP2016532522A 2013-11-27 2014-11-13 デュアルモードトランジスタ Expired - Fee Related JP6219521B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361909533P 2013-11-27 2013-11-27
US61/909,533 2013-11-27
US14/225,836 US9601607B2 (en) 2013-11-27 2014-03-26 Dual mode transistor
US14/225,836 2014-03-26
PCT/US2014/065539 WO2015080873A1 (en) 2013-11-27 2014-11-13 Dual mode transistor

Publications (3)

Publication Number Publication Date
JP2017505530A JP2017505530A (ja) 2017-02-16
JP2017505530A5 true JP2017505530A5 (enExample) 2017-06-15
JP6219521B2 JP6219521B2 (ja) 2017-10-25

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Family Applications (1)

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JP2016532522A Expired - Fee Related JP6219521B2 (ja) 2013-11-27 2014-11-13 デュアルモードトランジスタ

Country Status (5)

Country Link
US (1) US9601607B2 (enExample)
EP (1) EP3075010B1 (enExample)
JP (1) JP6219521B2 (enExample)
CN (1) CN105793986B (enExample)
WO (1) WO2015080873A1 (enExample)

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