JP2018509685A5 - - Google Patents
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- Publication number
- JP2018509685A5 JP2018509685A5 JP2017538998A JP2017538998A JP2018509685A5 JP 2018509685 A5 JP2018509685 A5 JP 2018509685A5 JP 2017538998 A JP2017538998 A JP 2017538998A JP 2017538998 A JP2017538998 A JP 2017538998A JP 2018509685 A5 JP2018509685 A5 JP 2018509685A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- output
- amplifier
- noisy
- ground
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/628,996 US9379727B1 (en) | 2015-02-23 | 2015-02-23 | Transmit digital to analog converter (DAC) spur attenuation |
| US14/628,996 | 2015-02-23 | ||
| PCT/US2016/017815 WO2016137768A1 (en) | 2015-02-23 | 2016-02-12 | Transmit digital to analog converter (dac) spur attenuation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018509685A JP2018509685A (ja) | 2018-04-05 |
| JP2018509685A5 true JP2018509685A5 (enExample) | 2019-02-28 |
Family
ID=55485335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017538998A Pending JP2018509685A (ja) | 2015-02-23 | 2016-02-12 | 送信デジタル−アナログ変換器（ｄａｃ）スパー減衰 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9379727B1 (enExample) |
| EP (1) | EP3262479A1 (enExample) |
| JP (1) | JP2018509685A (enExample) |
| CN (1) | CN107257947B (enExample) |
| WO (1) | WO2016137768A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108259804B (zh) * | 2016-12-29 | 2021-06-29 | 扬智科技股份有限公司 | 视频输出系统及其相关视频信号补偿方法 |
| EP3685506B1 (en) * | 2017-06-13 | 2024-03-06 | Firecomms Limited | A low-noise transimpedance amplifier incorporating a regulator |
| WO2019227452A1 (zh) * | 2018-05-31 | 2019-12-05 | 华为技术有限公司 | 射频发射机和信号处理方法 |
| US10938403B2 (en) * | 2018-06-29 | 2021-03-02 | Texas Instruments Incorporated | Battery charging and measurement circuit |
| US11705921B2 (en) | 2020-06-10 | 2023-07-18 | Qualcomm Incorporated | Adaptive switch biasing scheme for digital-to-analog converter (DAC) performance enhancement |
| US12184294B2 (en) * | 2022-07-25 | 2024-12-31 | Apple Inc. | Split pass device applications for DAC supply systems |
| US12393212B2 (en) * | 2022-07-25 | 2025-08-19 | Apple Inc. | Split pass device applications for DAC supply systems |
| US11777496B1 (en) * | 2022-08-22 | 2023-10-03 | International Business Machines Corporation | Low voltage signal path in a radio frequency signal generator |
| CN115459777B (zh) * | 2022-09-23 | 2025-11-28 | 中科芯集成电路有限公司 | 一种适用于差分电流舵dac的偏置电路 |
| WO2025080347A1 (en) * | 2023-10-12 | 2025-04-17 | Qorvo Us, Inc. | Systems and methods for noise reduction for multi-stage power amplifier chain |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100231393B1 (ko) * | 1991-04-18 | 1999-11-15 | 나시모토 류조 | 반도체집적회로장치 |
| US6522114B1 (en) | 2001-12-10 | 2003-02-18 | Koninklijke Philips Electronics N.V. | Noise reduction architecture for low dropout voltage regulators |
| US7042274B2 (en) * | 2003-09-29 | 2006-05-09 | Intel Corporation | Regulated sleep transistor apparatus, method, and system |
| US8294441B2 (en) | 2006-11-13 | 2012-10-23 | Decicon, Inc. | Fast low dropout voltage regulator circuit |
| US7436246B2 (en) * | 2007-02-26 | 2008-10-14 | Ana Semiconductor | Pin number reduction circuit and methodology for mixed-signal IC, memory IC, and SOC |
| US8305056B2 (en) | 2008-12-09 | 2012-11-06 | Qualcomm Incorporated | Low drop-out voltage regulator with wide bandwidth power supply rejection ratio |
| US7893670B2 (en) * | 2009-02-20 | 2011-02-22 | Standard Microsystems Corporation | Frequency compensation scheme for stabilizing the LDO using external NPN in HV domain |
| JP2011147037A (ja) * | 2010-01-15 | 2011-07-28 | Elpida Memory Inc | 半導体装置及びこれを備えるデータ処理システム |
| US8981739B2 (en) | 2012-09-26 | 2015-03-17 | Nxp B.V. | Low power low dropout linear voltage regulator |
| US9329649B2 (en) * | 2012-11-21 | 2016-05-03 | Stmicroelectronics S.R.L. | Dual input single output regulator for an inertial sensor |
| US9766678B2 (en) | 2013-02-04 | 2017-09-19 | Intel Corporation | Multiple voltage identification (VID) power architecture, a digital synthesizable low dropout regulator, and apparatus for improving reliability of power gates |
| US9201436B2 (en) * | 2013-07-22 | 2015-12-01 | Entropic Communications, Llc | Adaptive LDO regulator system and method |
-
2015
- 2015-02-23 US US14/628,996 patent/US9379727B1/en active Active
-
2016
- 2016-02-12 CN CN201680011337.XA patent/CN107257947B/zh not_active Expired - Fee Related
- 2016-02-12 JP JP2017538998A patent/JP2018509685A/ja active Pending
- 2016-02-12 EP EP16708535.6A patent/EP3262479A1/en not_active Withdrawn
- 2016-02-12 WO PCT/US2016/017815 patent/WO2016137768A1/en not_active Ceased
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