JP6219521B2 - デュアルモードトランジスタ - Google Patents

デュアルモードトランジスタ Download PDF

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Publication number
JP6219521B2
JP6219521B2 JP2016532522A JP2016532522A JP6219521B2 JP 6219521 B2 JP6219521 B2 JP 6219521B2 JP 2016532522 A JP2016532522 A JP 2016532522A JP 2016532522 A JP2016532522 A JP 2016532522A JP 6219521 B2 JP6219521 B2 JP 6219521B2
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Japan
Prior art keywords
transistor
region
voltage
gate
dual mode
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JP2016532522A
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Japanese (ja)
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JP2017505530A (ja
JP2017505530A5 (enExample
Inventor
シア・リ
デイク・ダニエル・キム
ビン・ヤン
ジョンヘ・キム
ダニエル・ウェイン・ペリー
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2016532522A 2013-11-27 2014-11-13 デュアルモードトランジスタ Expired - Fee Related JP6219521B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361909533P 2013-11-27 2013-11-27
US61/909,533 2013-11-27
US14/225,836 US9601607B2 (en) 2013-11-27 2014-03-26 Dual mode transistor
US14/225,836 2014-03-26
PCT/US2014/065539 WO2015080873A1 (en) 2013-11-27 2014-11-13 Dual mode transistor

Publications (3)

Publication Number Publication Date
JP2017505530A JP2017505530A (ja) 2017-02-16
JP2017505530A5 JP2017505530A5 (enExample) 2017-06-15
JP6219521B2 true JP6219521B2 (ja) 2017-10-25

Family

ID=53182135

Family Applications (1)

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JP2016532522A Expired - Fee Related JP6219521B2 (ja) 2013-11-27 2014-11-13 デュアルモードトランジスタ

Country Status (5)

Country Link
US (1) US9601607B2 (enExample)
EP (1) EP3075010B1 (enExample)
JP (1) JP6219521B2 (enExample)
CN (1) CN105793986B (enExample)
WO (1) WO2015080873A1 (enExample)

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Also Published As

Publication number Publication date
WO2015080873A1 (en) 2015-06-04
EP3075010A1 (en) 2016-10-05
US9601607B2 (en) 2017-03-21
CN105793986A (zh) 2016-07-20
JP2017505530A (ja) 2017-02-16
US20150145592A1 (en) 2015-05-28
EP3075010B1 (en) 2018-01-10
CN105793986B (zh) 2019-03-05

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