CN105793986B - 双模晶体管 - Google Patents

双模晶体管 Download PDF

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Publication number
CN105793986B
CN105793986B CN201480065013.5A CN201480065013A CN105793986B CN 105793986 B CN105793986 B CN 105793986B CN 201480065013 A CN201480065013 A CN 201480065013A CN 105793986 B CN105793986 B CN 105793986B
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CN
China
Prior art keywords
transistor
voltage
bimodulus
region
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201480065013.5A
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English (en)
Chinese (zh)
Other versions
CN105793986A (zh
Inventor
X·李
D·D·金
B·杨
J·金
D·W·佩里
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Qualcomm Inc
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Qualcomm Inc
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Publication date
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Publication of CN105793986A publication Critical patent/CN105793986A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201480065013.5A 2013-11-27 2014-11-13 双模晶体管 Expired - Fee Related CN105793986B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361909533P 2013-11-27 2013-11-27
US61/909,533 2013-11-27
US14/225,836 US9601607B2 (en) 2013-11-27 2014-03-26 Dual mode transistor
US14/225,836 2014-03-26
PCT/US2014/065539 WO2015080873A1 (en) 2013-11-27 2014-11-13 Dual mode transistor

Publications (2)

Publication Number Publication Date
CN105793986A CN105793986A (zh) 2016-07-20
CN105793986B true CN105793986B (zh) 2019-03-05

Family

ID=53182135

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480065013.5A Expired - Fee Related CN105793986B (zh) 2013-11-27 2014-11-13 双模晶体管

Country Status (5)

Country Link
US (1) US9601607B2 (enExample)
EP (1) EP3075010B1 (enExample)
JP (1) JP6219521B2 (enExample)
CN (1) CN105793986B (enExample)
WO (1) WO2015080873A1 (enExample)

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US10319662B2 (en) 2017-02-01 2019-06-11 Indian Institute Of Science Non-planar electrostatic discharge (ESD) protection devices with nano heat sinks
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US10256307B2 (en) 2017-05-08 2019-04-09 Macronix International Co., Ltd. Semiconductor device
CN108878418B (zh) * 2017-05-12 2021-02-09 中芯国际集成电路制造(上海)有限公司 半导体装置、检测器件发热的方法及制造方法
US10325824B2 (en) * 2017-06-13 2019-06-18 Globalfoundries Inc. Methods, apparatus and system for threshold voltage control in FinFET devices
CN108038274B (zh) * 2017-11-27 2021-08-20 深圳市兴森快捷电路科技股份有限公司 一种pcb与ic封装协同设计方法及装置

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US5101257A (en) * 1991-07-01 1992-03-31 Motorola, Inc. Semiconductor device having merged bipolar and MOS transistors and process for making the same
US5498885A (en) * 1994-09-26 1996-03-12 Northern Telecom Limited Modulation circuit
CN1695245A (zh) * 2002-12-03 2005-11-09 国际商业机器公司 横向lubistor结构和方法

Also Published As

Publication number Publication date
WO2015080873A1 (en) 2015-06-04
EP3075010A1 (en) 2016-10-05
US9601607B2 (en) 2017-03-21
JP6219521B2 (ja) 2017-10-25
CN105793986A (zh) 2016-07-20
JP2017505530A (ja) 2017-02-16
US20150145592A1 (en) 2015-05-28
EP3075010B1 (en) 2018-01-10

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Granted publication date: 20190305

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