JP2018534806A5 - - Google Patents

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Publication number
JP2018534806A5
JP2018534806A5 JP2018511657A JP2018511657A JP2018534806A5 JP 2018534806 A5 JP2018534806 A5 JP 2018534806A5 JP 2018511657 A JP2018511657 A JP 2018511657A JP 2018511657 A JP2018511657 A JP 2018511657A JP 2018534806 A5 JP2018534806 A5 JP 2018534806A5
Authority
JP
Japan
Prior art keywords
inverter
voltage
transistor
rail
switching device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018511657A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018534806A (ja
Filing date
Publication date
Priority claimed from US14/847,387 external-priority patent/US20170070225A1/en
Application filed filed Critical
Publication of JP2018534806A publication Critical patent/JP2018534806A/ja
Publication of JP2018534806A5 publication Critical patent/JP2018534806A5/ja
Pending legal-status Critical Current

Links

JP2018511657A 2015-09-08 2016-08-12 電力ゲーティングデバイスおよび方法 Pending JP2018534806A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/847,387 US20170070225A1 (en) 2015-09-08 2015-09-08 Power gating devices and methods
US14/847,387 2015-09-08
PCT/US2016/046815 WO2017044249A1 (en) 2015-09-08 2016-08-12 Power gating devices and methods

Publications (2)

Publication Number Publication Date
JP2018534806A JP2018534806A (ja) 2018-11-22
JP2018534806A5 true JP2018534806A5 (enExample) 2019-09-05

Family

ID=56853814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018511657A Pending JP2018534806A (ja) 2015-09-08 2016-08-12 電力ゲーティングデバイスおよび方法

Country Status (9)

Country Link
US (1) US20170070225A1 (enExample)
EP (1) EP3347989A1 (enExample)
JP (1) JP2018534806A (enExample)
KR (1) KR20180051592A (enExample)
CN (1) CN108028652A (enExample)
AU (1) AU2016320677A1 (enExample)
BR (1) BR112018004461A2 (enExample)
TW (1) TW201729539A (enExample)
WO (1) WO2017044249A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180127776A (ko) * 2017-05-22 2018-11-30 에스케이하이닉스 주식회사 전원 게이팅 회로를 포함하는 반도체 장치 및 이의 리페어 방법
US10312912B2 (en) * 2017-06-28 2019-06-04 Texas Instruments Incorporated Gate control for a tristate output buffer
US10529407B2 (en) * 2017-07-20 2020-01-07 Samsung Electronics Co., Ltd. Memory device including a plurality of power rails and method of operating the same
KR102652805B1 (ko) * 2018-03-12 2024-04-01 에스케이하이닉스 주식회사 파워 게이팅 회로 및 그 제어 시스템
US12217793B2 (en) 2021-11-16 2025-02-04 Samsung Electronics Co., Ltd. Data transfer circuits in nonvolatile memory devices and nonvolatile memory devices including the same
US12034442B2 (en) * 2022-09-20 2024-07-09 Cirrus Logic Inc. Configurable ground switch to support power delivery between two supply domains
US20250110538A1 (en) * 2023-09-28 2025-04-03 Advanced Micro Devices, Inc. Granular power gating override

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721964A (en) * 1970-02-18 1973-03-20 Hewlett Packard Co Integrated circuit read only memory bit organized in coincident select structure
US5583457A (en) * 1992-04-14 1996-12-10 Hitachi, Ltd. Semiconductor integrated circuit device having power reduction mechanism
JP3725911B2 (ja) * 1994-06-02 2005-12-14 株式会社ルネサステクノロジ 半導体装置
JP3645593B2 (ja) * 1994-09-09 2005-05-11 株式会社ルネサステクノロジ 半導体集積回路装置
JPH09231756A (ja) * 1995-12-21 1997-09-05 Hitachi Ltd 半導体集積回路装置と半導体集積回路の動作方法及び半導体集積回路装置の回路接続検証方法
JP4390305B2 (ja) * 1999-01-04 2009-12-24 株式会社ルネサステクノロジ 半導体装置
US6977519B2 (en) * 2003-05-14 2005-12-20 International Business Machines Corporation Digital logic with reduced leakage
US7126370B2 (en) * 2004-10-28 2006-10-24 International Business Machines Corporation Power gating techniques able to have data retention and variability immunity properties
US20080197914A1 (en) * 2007-02-15 2008-08-21 Daniel Shimizu Dynamic leakage control using selective back-biasing
US8648654B1 (en) * 2012-09-25 2014-02-11 Arm Limited Integrated circuit and method for generating a layout of such an integrated circuit
EP2804313B1 (en) * 2013-05-17 2018-09-12 Nxp B.V. Transconductance amplifier

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