JP2018534806A5 - - Google Patents
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- Publication number
- JP2018534806A5 JP2018534806A5 JP2018511657A JP2018511657A JP2018534806A5 JP 2018534806 A5 JP2018534806 A5 JP 2018534806A5 JP 2018511657 A JP2018511657 A JP 2018511657A JP 2018511657 A JP2018511657 A JP 2018511657A JP 2018534806 A5 JP2018534806 A5 JP 2018534806A5
- Authority
- JP
- Japan
- Prior art keywords
- inverter
- voltage
- transistor
- rail
- switching device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims 6
- 150000004706 metal oxides Chemical class 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/847,387 US20170070225A1 (en) | 2015-09-08 | 2015-09-08 | Power gating devices and methods |
| US14/847,387 | 2015-09-08 | ||
| PCT/US2016/046815 WO2017044249A1 (en) | 2015-09-08 | 2016-08-12 | Power gating devices and methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018534806A JP2018534806A (ja) | 2018-11-22 |
| JP2018534806A5 true JP2018534806A5 (enExample) | 2019-09-05 |
Family
ID=56853814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018511657A Pending JP2018534806A (ja) | 2015-09-08 | 2016-08-12 | 電力ゲーティングデバイスおよび方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20170070225A1 (enExample) |
| EP (1) | EP3347989A1 (enExample) |
| JP (1) | JP2018534806A (enExample) |
| KR (1) | KR20180051592A (enExample) |
| CN (1) | CN108028652A (enExample) |
| AU (1) | AU2016320677A1 (enExample) |
| BR (1) | BR112018004461A2 (enExample) |
| TW (1) | TW201729539A (enExample) |
| WO (1) | WO2017044249A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180127776A (ko) * | 2017-05-22 | 2018-11-30 | 에스케이하이닉스 주식회사 | 전원 게이팅 회로를 포함하는 반도체 장치 및 이의 리페어 방법 |
| US10312912B2 (en) * | 2017-06-28 | 2019-06-04 | Texas Instruments Incorporated | Gate control for a tristate output buffer |
| US10529407B2 (en) * | 2017-07-20 | 2020-01-07 | Samsung Electronics Co., Ltd. | Memory device including a plurality of power rails and method of operating the same |
| KR102652805B1 (ko) * | 2018-03-12 | 2024-04-01 | 에스케이하이닉스 주식회사 | 파워 게이팅 회로 및 그 제어 시스템 |
| US12217793B2 (en) | 2021-11-16 | 2025-02-04 | Samsung Electronics Co., Ltd. | Data transfer circuits in nonvolatile memory devices and nonvolatile memory devices including the same |
| US12034442B2 (en) * | 2022-09-20 | 2024-07-09 | Cirrus Logic Inc. | Configurable ground switch to support power delivery between two supply domains |
| US20250110538A1 (en) * | 2023-09-28 | 2025-04-03 | Advanced Micro Devices, Inc. | Granular power gating override |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3721964A (en) * | 1970-02-18 | 1973-03-20 | Hewlett Packard Co | Integrated circuit read only memory bit organized in coincident select structure |
| US5583457A (en) * | 1992-04-14 | 1996-12-10 | Hitachi, Ltd. | Semiconductor integrated circuit device having power reduction mechanism |
| JP3725911B2 (ja) * | 1994-06-02 | 2005-12-14 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP3645593B2 (ja) * | 1994-09-09 | 2005-05-11 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| JPH09231756A (ja) * | 1995-12-21 | 1997-09-05 | Hitachi Ltd | 半導体集積回路装置と半導体集積回路の動作方法及び半導体集積回路装置の回路接続検証方法 |
| JP4390305B2 (ja) * | 1999-01-04 | 2009-12-24 | 株式会社ルネサステクノロジ | 半導体装置 |
| US6977519B2 (en) * | 2003-05-14 | 2005-12-20 | International Business Machines Corporation | Digital logic with reduced leakage |
| US7126370B2 (en) * | 2004-10-28 | 2006-10-24 | International Business Machines Corporation | Power gating techniques able to have data retention and variability immunity properties |
| US20080197914A1 (en) * | 2007-02-15 | 2008-08-21 | Daniel Shimizu | Dynamic leakage control using selective back-biasing |
| US8648654B1 (en) * | 2012-09-25 | 2014-02-11 | Arm Limited | Integrated circuit and method for generating a layout of such an integrated circuit |
| EP2804313B1 (en) * | 2013-05-17 | 2018-09-12 | Nxp B.V. | Transconductance amplifier |
-
2015
- 2015-09-08 US US14/847,387 patent/US20170070225A1/en not_active Abandoned
-
2016
- 2016-08-12 BR BR112018004461A patent/BR112018004461A2/pt not_active Application Discontinuation
- 2016-08-12 JP JP2018511657A patent/JP2018534806A/ja active Pending
- 2016-08-12 WO PCT/US2016/046815 patent/WO2017044249A1/en not_active Ceased
- 2016-08-12 EP EP16760244.0A patent/EP3347989A1/en not_active Withdrawn
- 2016-08-12 KR KR1020187009917A patent/KR20180051592A/ko not_active Withdrawn
- 2016-08-12 AU AU2016320677A patent/AU2016320677A1/en not_active Abandoned
- 2016-08-12 TW TW105125839A patent/TW201729539A/zh unknown
- 2016-08-12 CN CN201680051783.3A patent/CN108028652A/zh active Pending