TW201729539A - 功率閘控裝置及方法 - Google Patents
功率閘控裝置及方法 Download PDFInfo
- Publication number
- TW201729539A TW201729539A TW105125839A TW105125839A TW201729539A TW 201729539 A TW201729539 A TW 201729539A TW 105125839 A TW105125839 A TW 105125839A TW 105125839 A TW105125839 A TW 105125839A TW 201729539 A TW201729539 A TW 201729539A
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- transistor
- inverter
- rail
- power
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 23
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 4
- 238000007667 floating Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000008186 active pharmaceutical agent Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- RDYMFSUJUZBWLH-UHFFFAOYSA-N endosulfan Chemical compound C12COS(=O)OCC2C2(Cl)C(Cl)=C(Cl)C1(Cl)C2(Cl)Cl RDYMFSUJUZBWLH-UHFFFAOYSA-N 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/847,387 US20170070225A1 (en) | 2015-09-08 | 2015-09-08 | Power gating devices and methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201729539A true TW201729539A (zh) | 2017-08-16 |
Family
ID=56853814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105125839A TW201729539A (zh) | 2015-09-08 | 2016-08-12 | 功率閘控裝置及方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20170070225A1 (enExample) |
| EP (1) | EP3347989A1 (enExample) |
| JP (1) | JP2018534806A (enExample) |
| KR (1) | KR20180051592A (enExample) |
| CN (1) | CN108028652A (enExample) |
| AU (1) | AU2016320677A1 (enExample) |
| BR (1) | BR112018004461A2 (enExample) |
| TW (1) | TW201729539A (enExample) |
| WO (1) | WO2017044249A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180127776A (ko) * | 2017-05-22 | 2018-11-30 | 에스케이하이닉스 주식회사 | 전원 게이팅 회로를 포함하는 반도체 장치 및 이의 리페어 방법 |
| US10312912B2 (en) * | 2017-06-28 | 2019-06-04 | Texas Instruments Incorporated | Gate control for a tristate output buffer |
| US10529407B2 (en) * | 2017-07-20 | 2020-01-07 | Samsung Electronics Co., Ltd. | Memory device including a plurality of power rails and method of operating the same |
| KR102652805B1 (ko) * | 2018-03-12 | 2024-04-01 | 에스케이하이닉스 주식회사 | 파워 게이팅 회로 및 그 제어 시스템 |
| US12217793B2 (en) | 2021-11-16 | 2025-02-04 | Samsung Electronics Co., Ltd. | Data transfer circuits in nonvolatile memory devices and nonvolatile memory devices including the same |
| US12034442B2 (en) * | 2022-09-20 | 2024-07-09 | Cirrus Logic Inc. | Configurable ground switch to support power delivery between two supply domains |
| US20250110538A1 (en) * | 2023-09-28 | 2025-04-03 | Advanced Micro Devices, Inc. | Granular power gating override |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3721964A (en) * | 1970-02-18 | 1973-03-20 | Hewlett Packard Co | Integrated circuit read only memory bit organized in coincident select structure |
| US5583457A (en) * | 1992-04-14 | 1996-12-10 | Hitachi, Ltd. | Semiconductor integrated circuit device having power reduction mechanism |
| JP3725911B2 (ja) * | 1994-06-02 | 2005-12-14 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP3645593B2 (ja) * | 1994-09-09 | 2005-05-11 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| JPH09231756A (ja) * | 1995-12-21 | 1997-09-05 | Hitachi Ltd | 半導体集積回路装置と半導体集積回路の動作方法及び半導体集積回路装置の回路接続検証方法 |
| JP4390305B2 (ja) * | 1999-01-04 | 2009-12-24 | 株式会社ルネサステクノロジ | 半導体装置 |
| US6977519B2 (en) * | 2003-05-14 | 2005-12-20 | International Business Machines Corporation | Digital logic with reduced leakage |
| US7126370B2 (en) * | 2004-10-28 | 2006-10-24 | International Business Machines Corporation | Power gating techniques able to have data retention and variability immunity properties |
| US20080197914A1 (en) * | 2007-02-15 | 2008-08-21 | Daniel Shimizu | Dynamic leakage control using selective back-biasing |
| US8648654B1 (en) * | 2012-09-25 | 2014-02-11 | Arm Limited | Integrated circuit and method for generating a layout of such an integrated circuit |
| EP2804313B1 (en) * | 2013-05-17 | 2018-09-12 | Nxp B.V. | Transconductance amplifier |
-
2015
- 2015-09-08 US US14/847,387 patent/US20170070225A1/en not_active Abandoned
-
2016
- 2016-08-12 BR BR112018004461A patent/BR112018004461A2/pt not_active Application Discontinuation
- 2016-08-12 JP JP2018511657A patent/JP2018534806A/ja active Pending
- 2016-08-12 WO PCT/US2016/046815 patent/WO2017044249A1/en not_active Ceased
- 2016-08-12 EP EP16760244.0A patent/EP3347989A1/en not_active Withdrawn
- 2016-08-12 KR KR1020187009917A patent/KR20180051592A/ko not_active Withdrawn
- 2016-08-12 AU AU2016320677A patent/AU2016320677A1/en not_active Abandoned
- 2016-08-12 TW TW105125839A patent/TW201729539A/zh unknown
- 2016-08-12 CN CN201680051783.3A patent/CN108028652A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| AU2016320677A1 (en) | 2018-02-15 |
| KR20180051592A (ko) | 2018-05-16 |
| US20170070225A1 (en) | 2017-03-09 |
| JP2018534806A (ja) | 2018-11-22 |
| CN108028652A (zh) | 2018-05-11 |
| WO2017044249A1 (en) | 2017-03-16 |
| BR112018004461A2 (pt) | 2018-09-25 |
| EP3347989A1 (en) | 2018-07-18 |
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