CN108028652A - 功率门控器件及方法 - Google Patents

功率门控器件及方法 Download PDF

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Publication number
CN108028652A
CN108028652A CN201680051783.3A CN201680051783A CN108028652A CN 108028652 A CN108028652 A CN 108028652A CN 201680051783 A CN201680051783 A CN 201680051783A CN 108028652 A CN108028652 A CN 108028652A
Authority
CN
China
Prior art keywords
voltage
transistor
rail
inverter
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680051783.3A
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English (en)
Chinese (zh)
Inventor
J·P·金
S·金
T·金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN108028652A publication Critical patent/CN108028652A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201680051783.3A 2015-09-08 2016-08-12 功率门控器件及方法 Pending CN108028652A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/847,387 US20170070225A1 (en) 2015-09-08 2015-09-08 Power gating devices and methods
US14/847,387 2015-09-08
PCT/US2016/046815 WO2017044249A1 (en) 2015-09-08 2016-08-12 Power gating devices and methods

Publications (1)

Publication Number Publication Date
CN108028652A true CN108028652A (zh) 2018-05-11

Family

ID=56853814

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680051783.3A Pending CN108028652A (zh) 2015-09-08 2016-08-12 功率门控器件及方法

Country Status (9)

Country Link
US (1) US20170070225A1 (enExample)
EP (1) EP3347989A1 (enExample)
JP (1) JP2018534806A (enExample)
KR (1) KR20180051592A (enExample)
CN (1) CN108028652A (enExample)
AU (1) AU2016320677A1 (enExample)
BR (1) BR112018004461A2 (enExample)
TW (1) TW201729539A (enExample)
WO (1) WO2017044249A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180127776A (ko) * 2017-05-22 2018-11-30 에스케이하이닉스 주식회사 전원 게이팅 회로를 포함하는 반도체 장치 및 이의 리페어 방법
US10312912B2 (en) * 2017-06-28 2019-06-04 Texas Instruments Incorporated Gate control for a tristate output buffer
US10529407B2 (en) * 2017-07-20 2020-01-07 Samsung Electronics Co., Ltd. Memory device including a plurality of power rails and method of operating the same
KR102652805B1 (ko) * 2018-03-12 2024-04-01 에스케이하이닉스 주식회사 파워 게이팅 회로 및 그 제어 시스템
US12217793B2 (en) 2021-11-16 2025-02-04 Samsung Electronics Co., Ltd. Data transfer circuits in nonvolatile memory devices and nonvolatile memory devices including the same
US12034442B2 (en) * 2022-09-20 2024-07-09 Cirrus Logic Inc. Configurable ground switch to support power delivery between two supply domains
US20250110538A1 (en) * 2023-09-28 2025-04-03 Advanced Micro Devices, Inc. Granular power gating override

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010019502A1 (en) * 1994-06-02 2001-09-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having hierarchical power source arrangement
US20020000873A1 (en) * 1999-01-04 2002-01-03 Hiroaki Tanizaki Semiconductor device having hierarchical power supply line structure improved in operating speed
US20060267629A1 (en) * 2004-10-28 2006-11-30 Subhrajit Bhattacharya Power gating techniques able to have data retention and variability immunity properties
CN101689856A (zh) * 2007-02-15 2010-03-31 先进微装置公司 使用选择性反向偏置的动态泄露控制
CN104167997A (zh) * 2013-05-17 2014-11-26 Nxp股份有限公司 跨导放大器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721964A (en) * 1970-02-18 1973-03-20 Hewlett Packard Co Integrated circuit read only memory bit organized in coincident select structure
US5583457A (en) * 1992-04-14 1996-12-10 Hitachi, Ltd. Semiconductor integrated circuit device having power reduction mechanism
JP3645593B2 (ja) * 1994-09-09 2005-05-11 株式会社ルネサステクノロジ 半導体集積回路装置
JPH09231756A (ja) * 1995-12-21 1997-09-05 Hitachi Ltd 半導体集積回路装置と半導体集積回路の動作方法及び半導体集積回路装置の回路接続検証方法
US6977519B2 (en) * 2003-05-14 2005-12-20 International Business Machines Corporation Digital logic with reduced leakage
US8648654B1 (en) * 2012-09-25 2014-02-11 Arm Limited Integrated circuit and method for generating a layout of such an integrated circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010019502A1 (en) * 1994-06-02 2001-09-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having hierarchical power source arrangement
US20020000873A1 (en) * 1999-01-04 2002-01-03 Hiroaki Tanizaki Semiconductor device having hierarchical power supply line structure improved in operating speed
US20060267629A1 (en) * 2004-10-28 2006-11-30 Subhrajit Bhattacharya Power gating techniques able to have data retention and variability immunity properties
CN101689856A (zh) * 2007-02-15 2010-03-31 先进微装置公司 使用选择性反向偏置的动态泄露控制
CN104167997A (zh) * 2013-05-17 2014-11-26 Nxp股份有限公司 跨导放大器

Also Published As

Publication number Publication date
AU2016320677A1 (en) 2018-02-15
KR20180051592A (ko) 2018-05-16
US20170070225A1 (en) 2017-03-09
JP2018534806A (ja) 2018-11-22
TW201729539A (zh) 2017-08-16
WO2017044249A1 (en) 2017-03-16
BR112018004461A2 (pt) 2018-09-25
EP3347989A1 (en) 2018-07-18

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Application publication date: 20180511

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