JP2017228723A - 保護膜被覆装置および保護膜被覆方法 - Google Patents
保護膜被覆装置および保護膜被覆方法 Download PDFInfo
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Abstract
Description
50 保護膜形成兼洗浄部(保護膜被覆手段、洗浄手段)
51 スピンナテーブル
60 紫外線照射部
70 被覆状態検出部(検出手段)
90 制御部(制御手段)
100 加工システム(保護膜被覆装置)
101 保護膜形成装置(保護膜被覆手段)
102 保護膜洗浄装置(洗浄手段)
103 保護膜計測装置(検出手段)
104 前処理装置
105 加工装置
106 インタフェース(制御手段)
R 被覆率(被覆状態を示す値)
W ウエーハ
t 膜厚(被覆状態を示す値)
Claims (4)
- 被加工物の加工面に保護膜を被覆する保護膜被覆手段と、
前記加工面に被覆された保護膜を洗浄する洗浄手段と、
前記保護膜被覆手段によって前記被加工物の加工面に被覆された保護膜の被覆状態を検出する検出手段と、
前記保護膜被覆手段、前記洗浄手段および前記検出手段を制御する制御手段を備え、
前記制御手段は、前記検出手段からの検出信号に基づいて前記被加工物の加工面に被覆された保護膜の膜厚が所定範囲内にあるか否かを判定し、
前記膜厚が所定範囲にないと判定した場合には、前記洗浄手段を作動して被加工物の加工面に被覆された保護膜を洗浄し、前記所定範囲に対する前記膜厚の大きさに応じて選択された前処理を前記加工面に施した後、再度、前記保護膜被覆手段を作動して被加工物の前記加工面に保護膜を被覆する、保護膜被覆装置。 - 前記所定の前処理は、前記加工面へ紫外線を照射する、または、水を供給することである請求項1に記載の保護膜被覆装置。
- 前記保護膜は水溶性の液状樹脂により構成され、前記洗浄手段は洗浄液として水を用いる、請求項1または2に記載の保護膜被覆装置。
- 被加工物の表面に樹脂を含む保護膜を被覆する方法であって、
前記被加工物の裏面を保持して前記被加工物の表面を露出させる工程と、
露出された前記被加工物の表面に保護膜を被覆する工程と、
前記表面に前記保護膜が所定範囲に被覆されているか否かを判定する工程と、を有し、
前記被覆された保護膜の膜厚が所定範囲にないと判定された場合には、被覆された保護膜を洗浄除去した後、前記被加工面に、前記所定範囲に対する膜厚の大きさに応じて選択された前処理を施した後、再度、保護膜を被覆する、保護膜被覆方法。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111702569A (zh) * | 2020-05-06 | 2020-09-25 | 德清勤龙磨床制造有限公司 | 一种封闭式桁架全自动锯片刀片磨床 |
TWI712462B (zh) * | 2016-06-24 | 2020-12-11 | 日商迪思科股份有限公司 | 保護膜被覆裝置及保護膜被覆方法 |
JP7250241B1 (ja) | 2022-09-02 | 2023-04-03 | 一般社団法人日本パルスレーザー振興協会 | レーザー処理用回収装置、レーザー処理システム、及び、レーザー処理方法 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6887722B2 (ja) * | 2016-10-25 | 2021-06-16 | 株式会社ディスコ | ウェーハの加工方法及び切削装置 |
SG11202010479PA (en) * | 2018-04-24 | 2020-11-27 | Disco Hi Tec Europe Gmbh | Alignment device and alignment method |
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JP2022178427A (ja) * | 2021-05-20 | 2022-12-02 | 株式会社ディスコ | 保護膜の厚み測定方法 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008229706A (ja) * | 2007-03-23 | 2008-10-02 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP2010267638A (ja) * | 2009-05-12 | 2010-11-25 | Disco Abrasive Syst Ltd | 保護膜の被覆方法及びウエーハのレーザ加工方法 |
JP2011060833A (ja) * | 2009-09-07 | 2011-03-24 | Disco Abrasive Syst Ltd | 保護膜被覆方法および保護膜被覆装置 |
JP2012104533A (ja) * | 2010-11-08 | 2012-05-31 | Disco Abrasive Syst Ltd | 測定方法および測定装置 |
JP2013066864A (ja) * | 2011-09-26 | 2013-04-18 | Toshiba Corp | 塗布装置及び塗布方法 |
JP2014217805A (ja) * | 2013-05-08 | 2014-11-20 | 株式会社ディスコ | 液状樹脂被覆装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3646640B2 (ja) * | 2000-09-25 | 2005-05-11 | 三菱住友シリコン株式会社 | シリコンウェーハのエッジ部保護方法 |
JP2004335915A (ja) * | 2003-05-12 | 2004-11-25 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
KR100596269B1 (ko) * | 2004-06-08 | 2006-07-03 | 동부일렉트로닉스 주식회사 | 반도체 소자의 노광방법 |
JP4571850B2 (ja) | 2004-11-12 | 2010-10-27 | 東京応化工業株式会社 | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
JP2007084926A (ja) | 2005-08-24 | 2007-04-05 | Brother Ind Ltd | 膜形成装置および膜形成方法 |
JP2008198820A (ja) | 2007-02-14 | 2008-08-28 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
JP2009123795A (ja) * | 2007-11-13 | 2009-06-04 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP2009158763A (ja) * | 2007-12-27 | 2009-07-16 | Disco Abrasive Syst Ltd | 保護膜被覆装置 |
JP5133855B2 (ja) * | 2008-11-25 | 2013-01-30 | 株式会社ディスコ | 保護膜の被覆方法 |
JP2012004294A (ja) | 2010-06-16 | 2012-01-05 | Shibaura Mechatronics Corp | 基板処理装置および基板処理方法 |
JP2015226004A (ja) | 2014-05-29 | 2015-12-14 | 株式会社ディスコ | 保護膜被覆方法 |
JP6393583B2 (ja) * | 2014-10-30 | 2018-09-19 | 株式会社ディスコ | 保護膜検出装置及び保護膜検出方法 |
JP6688695B2 (ja) * | 2016-06-24 | 2020-04-28 | 株式会社ディスコ | 保護膜被覆装置および保護膜被覆方法 |
-
2016
- 2016-06-24 JP JP2016125503A patent/JP6688695B2/ja active Active
-
2017
- 2017-05-11 TW TW106115664A patent/TWI712462B/zh active
- 2017-06-15 US US15/623,933 patent/US10086474B2/en active Active
- 2017-06-16 KR KR1020170076708A patent/KR102195666B1/ko active IP Right Grant
- 2017-06-21 CN CN201710474178.3A patent/CN107546151B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008229706A (ja) * | 2007-03-23 | 2008-10-02 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP2010267638A (ja) * | 2009-05-12 | 2010-11-25 | Disco Abrasive Syst Ltd | 保護膜の被覆方法及びウエーハのレーザ加工方法 |
JP2011060833A (ja) * | 2009-09-07 | 2011-03-24 | Disco Abrasive Syst Ltd | 保護膜被覆方法および保護膜被覆装置 |
JP2012104533A (ja) * | 2010-11-08 | 2012-05-31 | Disco Abrasive Syst Ltd | 測定方法および測定装置 |
JP2013066864A (ja) * | 2011-09-26 | 2013-04-18 | Toshiba Corp | 塗布装置及び塗布方法 |
JP2014217805A (ja) * | 2013-05-08 | 2014-11-20 | 株式会社ディスコ | 液状樹脂被覆装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI712462B (zh) * | 2016-06-24 | 2020-12-11 | 日商迪思科股份有限公司 | 保護膜被覆裝置及保護膜被覆方法 |
JP7387227B2 (ja) | 2019-10-07 | 2023-11-28 | 株式会社ディスコ | ウェーハの加工方法 |
CN111702569A (zh) * | 2020-05-06 | 2020-09-25 | 德清勤龙磨床制造有限公司 | 一种封闭式桁架全自动锯片刀片磨床 |
JP7250241B1 (ja) | 2022-09-02 | 2023-04-03 | 一般社団法人日本パルスレーザー振興協会 | レーザー処理用回収装置、レーザー処理システム、及び、レーザー処理方法 |
JP2024035581A (ja) * | 2022-09-02 | 2024-03-14 | 一般社団法人日本パルスレーザー振興協会 | レーザー処理用回収装置、レーザー処理システム、及び、レーザー処理方法 |
CN117861894A (zh) * | 2024-03-13 | 2024-04-12 | 常州威斯敦粘合材料有限责任公司 | 锂电池电芯喷涂自动化检测设备及方法 |
CN117861894B (zh) * | 2024-03-13 | 2024-05-07 | 常州威斯敦粘合材料有限责任公司 | 锂电池电芯喷涂自动化检测设备及方法 |
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