JP2012104533A - 測定方法および測定装置 - Google Patents
測定方法および測定装置 Download PDFInfo
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- JP2012104533A JP2012104533A JP2010249431A JP2010249431A JP2012104533A JP 2012104533 A JP2012104533 A JP 2012104533A JP 2010249431 A JP2010249431 A JP 2010249431A JP 2010249431 A JP2010249431 A JP 2010249431A JP 2012104533 A JP2012104533 A JP 2012104533A
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 230000001681 protective effect Effects 0.000 claims abstract description 181
- 230000008859 change Effects 0.000 claims abstract description 24
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- 238000012545 processing Methods 0.000 claims description 91
- 230000002745 absorbent Effects 0.000 claims description 39
- 239000002250 absorbent Substances 0.000 claims description 39
- 239000011347 resin Substances 0.000 claims description 22
- 229920005989 resin Polymers 0.000 claims description 22
- 238000003860 storage Methods 0.000 claims description 13
- 238000000691 measurement method Methods 0.000 claims description 8
- 239000002699 waste material Substances 0.000 claims description 4
- 238000005259 measurement Methods 0.000 abstract description 79
- 230000031700 light absorption Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 123
- 230000007246 mechanism Effects 0.000 description 36
- 230000008569 process Effects 0.000 description 27
- 230000003287 optical effect Effects 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000005755 formation reaction Methods 0.000 description 13
- 238000003384 imaging method Methods 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 6
- 238000003754 machining Methods 0.000 description 5
- 230000007723 transport mechanism Effects 0.000 description 5
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004597 plastic additive Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/0209—Low-coherence interferometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8483—Investigating reagent band
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Molecular Biology (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
【解決手段】本発明の測定方法は、ウェーハWに光吸収剤を含む保護膜61を形成するステップと、保護膜61を介してウェーハWに測定光を照射し、ウェーハWからの反射光を受光するステップと、事前に作製された保護膜61の厚みの変化に対するウェーハWの反射強度の変化を示す測定データを参照して、ウェーハWの反射強度から保護膜61の厚みを測定するステップとを有する構成とした。
【選択図】図4
Description
11 搬入搬出機構
12 保護膜形成機構
13 チャックテーブル
14 レーザー加工ユニット
15 厚み測定ユニット
16 プッシュプル機構
18 搬送機構
19 制御部(記憶手段、算出手段)
28 液状樹脂供給部
52 測定ヘッド
53 加工ヘッド
54 撮像ヘッド
55 測定用光源(光照射部)
56 ハーフミラー(光照射部)
57 ミラー(光照射部)
58、66 集光レンズ(光照射部)
59 受光部
61 保護膜
65 白色光源(光照射部)
W ウェーハ(ワーク)
Claims (3)
- ワークをレーザー加工する際に発生する加工屑からワークの表面を保護するために前記レーザーの波長の光を吸収する吸収剤を含んだ水溶性樹脂によって形成された保護膜の厚みを測定する測定方法であって、
前記吸収剤を含んだ水溶性樹脂によってワーク表面に所定の厚みとなる様に前記保護膜を形成する保護膜形成工程と、
前記保護膜形成工程の後に、ワーク表面に形成された前記保護膜に前記吸収剤が吸収する波長の光を照射して反射強度を測定する強度測定工程と、
前記保護膜形成工程で形成する前記保護膜の厚みを変化させながら前記強度測定工程を行うことで前記保護膜の厚み変化に対する前記反射強度の変化を表すマップを作製するマップ作製工程を含み、
ワークの表面に塗布された前記保護膜の厚みを測定する際は、
前記保護膜に前記吸収剤が吸収する波長の光を照射して前記反射強度を測定し、前記マップに基づいて前記保護膜の厚みを測定する保護膜厚み測定工程を実施することを特徴とする測定方法。 - 前記吸収剤が吸収する光の波長は少なくとも250nm以上かつ380nm以下、もしくは460nm以上かつ650nm以下のいずれかの波長を含むことを特徴とする請求項1に記載の測定方法。
- ワークをレーザー加工する際に発生する加工屑からワークの表面を保護するために前記レーザーの波長の光を吸収する吸収剤を含んだ水溶性樹脂によって形成された保護膜の厚みを測定する測定装置であって、
前記吸収剤が吸収する波長の光をワーク表面に形成された保護膜に向けて照射する光照射部と、
前記光照射部が照射した光の反射光を受光して反射強度を取得する受光部と、
前記保護膜の厚み変化に対する前記反射強度の変化を表すマップを記憶する記憶手段と、
前記受光部で取得した前記反射強度と前記記憶手段で記憶した前記マップに基づいて前記保護膜の厚みを求める算出手段と、を有することを特徴とする測定装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010249431A JP5681453B2 (ja) | 2010-11-08 | 2010-11-08 | 測定方法および測定装置 |
KR1020110111167A KR101844071B1 (ko) | 2010-11-08 | 2011-10-28 | 측정 방법 및 측정 장치 |
CN201110346590.XA CN102564327B (zh) | 2010-11-08 | 2011-11-04 | 测定方法及测定装置 |
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JP2010249431A JP5681453B2 (ja) | 2010-11-08 | 2010-11-08 | 測定方法および測定装置 |
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JP2012104533A true JP2012104533A (ja) | 2012-05-31 |
JP5681453B2 JP5681453B2 (ja) | 2015-03-11 |
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JP (1) | JP5681453B2 (ja) |
KR (1) | KR101844071B1 (ja) |
CN (1) | CN102564327B (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014165361A (ja) * | 2013-02-26 | 2014-09-08 | Disco Abrasive Syst Ltd | 保護膜の厚さ測定方法 |
JP2015093780A (ja) * | 2013-11-14 | 2015-05-18 | 三菱レイヨン株式会社 | 繊維束の監視方法、この監視方法を用いた監視装置及び、この監視方法または監視装置を用いた繊維束の製造方法 |
JP2016169971A (ja) * | 2015-03-11 | 2016-09-23 | 株式会社ディスコ | 保護膜検出方法 |
JP2017228723A (ja) * | 2016-06-24 | 2017-12-28 | 株式会社ディスコ | 保護膜被覆装置および保護膜被覆方法 |
JP2018085400A (ja) * | 2016-11-22 | 2018-05-31 | 株式会社ディスコ | デバイスウェーハの加工方法 |
JP2021515948A (ja) * | 2018-03-12 | 2021-06-24 | セロニス エスイー | プロセス異常を修復するための方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103606528B (zh) * | 2013-10-23 | 2016-03-23 | 上海华力微电子有限公司 | 生长钨前的硅片检测装置和方法 |
JP6624919B2 (ja) * | 2015-12-18 | 2019-12-25 | 株式会社ディスコ | レーザー加工用保護膜検出方法 |
JP2017227532A (ja) * | 2016-06-22 | 2017-12-28 | 株式会社ディスコ | 蛍光検出装置 |
CN110268509B (zh) * | 2017-02-07 | 2023-06-16 | 东京毅力科创株式会社 | 成膜系统、成膜方法和计算机存储介质 |
US10236222B2 (en) * | 2017-02-08 | 2019-03-19 | Kla-Tencor Corporation | System and method for measuring substrate and film thickness distribution |
Citations (3)
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JPS6243503A (ja) * | 1985-08-20 | 1987-02-25 | Toyota Motor Corp | メタリツク塗装クリヤ−塗膜の膜厚測定法 |
JP2006140311A (ja) * | 2004-11-12 | 2006-06-01 | Tokyo Ohka Kogyo Co Ltd | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
JP2008229706A (ja) * | 2007-03-23 | 2008-10-02 | Disco Abrasive Syst Ltd | レーザー加工装置 |
Family Cites Families (5)
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JP3624476B2 (ja) * | 1995-07-17 | 2005-03-02 | セイコーエプソン株式会社 | 半導体レーザ装置の製造方法 |
IL125964A (en) * | 1998-08-27 | 2003-10-31 | Tevet Process Control Technolo | Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate |
EP1430270A4 (en) * | 2001-09-21 | 2006-10-25 | Kmac | METHOD AND DEVICE FOR MEASURING THE THICK PROFILE AND THE DISTRIBUTION OF THIN FILM MULTI-LAYER REFRACTIVE INDICES BY TWO-DIMENSIONAL REFLECTOMETRY |
KR100665003B1 (ko) | 2004-12-07 | 2007-01-09 | 삼성전기주식회사 | 금속표면 상의 유기도막 두께 측정방법 |
US20090107399A1 (en) * | 2007-10-29 | 2009-04-30 | Harald Bloess | System and Method of Measuring Film Height on a Substrate |
-
2010
- 2010-11-08 JP JP2010249431A patent/JP5681453B2/ja active Active
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2011
- 2011-10-28 KR KR1020110111167A patent/KR101844071B1/ko active IP Right Grant
- 2011-11-04 CN CN201110346590.XA patent/CN102564327B/zh active Active
Patent Citations (3)
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JPS6243503A (ja) * | 1985-08-20 | 1987-02-25 | Toyota Motor Corp | メタリツク塗装クリヤ−塗膜の膜厚測定法 |
JP2006140311A (ja) * | 2004-11-12 | 2006-06-01 | Tokyo Ohka Kogyo Co Ltd | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
JP2008229706A (ja) * | 2007-03-23 | 2008-10-02 | Disco Abrasive Syst Ltd | レーザー加工装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014165361A (ja) * | 2013-02-26 | 2014-09-08 | Disco Abrasive Syst Ltd | 保護膜の厚さ測定方法 |
JP2015093780A (ja) * | 2013-11-14 | 2015-05-18 | 三菱レイヨン株式会社 | 繊維束の監視方法、この監視方法を用いた監視装置及び、この監視方法または監視装置を用いた繊維束の製造方法 |
JP2016169971A (ja) * | 2015-03-11 | 2016-09-23 | 株式会社ディスコ | 保護膜検出方法 |
JP2017228723A (ja) * | 2016-06-24 | 2017-12-28 | 株式会社ディスコ | 保護膜被覆装置および保護膜被覆方法 |
JP2018085400A (ja) * | 2016-11-22 | 2018-05-31 | 株式会社ディスコ | デバイスウェーハの加工方法 |
JP2021515948A (ja) * | 2018-03-12 | 2021-06-24 | セロニス エスイー | プロセス異常を修復するための方法 |
JP7032557B2 (ja) | 2018-03-12 | 2022-03-08 | セロニス エスイー | プロセス異常を修復するための方法 |
US11307557B2 (en) | 2018-03-12 | 2022-04-19 | Celonis Se | Method for eliminating process anomalies |
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Publication number | Publication date |
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CN102564327B (zh) | 2016-09-14 |
KR101844071B1 (ko) | 2018-03-30 |
KR20120049132A (ko) | 2012-05-16 |
JP5681453B2 (ja) | 2015-03-11 |
CN102564327A (zh) | 2012-07-11 |
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