JP2017201675A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP2017201675A JP2017201675A JP2016126447A JP2016126447A JP2017201675A JP 2017201675 A JP2017201675 A JP 2017201675A JP 2016126447 A JP2016126447 A JP 2016126447A JP 2016126447 A JP2016126447 A JP 2016126447A JP 2017201675 A JP2017201675 A JP 2017201675A
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- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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Abstract
Description
1 :第1リード
2 :第2リード
3 :第3リード
4 :半導体素子
6 :封止樹脂
10 :リードフレーム
40 :素子本体
41 :第1電極
42 :第2電極
43 :第3電極
49 :導電性接合材
51 :第1ワイヤ
52 :第2ワイヤ
61 :封止樹脂主面
62 :封止樹脂裏面
63 :封止樹脂側面
81 :切断線
101 :第1主面
102 :第1裏面
103 :リードフレーム
110 :第1端子部
111 :第1端子端面
112 :第1端子裏面
113 :第1端子側面
114 :第1端子主面
120 :第1連結部
121 :第1連結端面
180 :第1裏面側凹部
191 :第1表層めっき層
201 :第2主面
202 :第2裏面
210 :第2端子部
211 :第2端子端面
212 :第2端子裏面
213 :第2端子側面
214 :第2端子主面
220 :第2連結部
221 :第2連結端面
230 :第2ワイヤボンディング部
232 :第2ワイヤボンディング裏面
280 :第2裏面側凹部
291 :第2表層めっき層
301 :第3主面
302 :第3裏面
310 :第3端子部
311 :第3端子端面
312 :第3端子裏面
313 :第3端子側面
314 :第3端子主面
320 :第3連結部
321 :第3連結端面
322 :第3連結裏面
323 :第3連結側面
324 :第3連結主面
330 :素子ボンディング部
332 :素子ボンディング裏面
380 :第3裏面側凹部
391 :第3表層めっき層
392 :第3中層めっき層
631 :第1部
632 :第2部
801 :スリット
802,803:切断線
1010 :主面
1020 :裏面
3000 :リード母材イオン
3910 :表層めっきイオン
Claims (29)
- 半導体素子と、
各々が厚さ方向において互いに反対側を向く主面および裏面を有し且つ前記半導体素子に導通するとともにいずれかの前記主面によって前記半導体素子を支持する複数のリードと、
前記複数のリードの一部ずつおよび前記半導体素子を覆う封止樹脂と、を備える半導体装置であって、
前記複数のリードは、前記封止樹脂に覆われた部分を除き、前記封止樹脂から露出する部分の少なくとも一部に、表層めっき層が形成されていることを特徴とする、半導体装置。 - 前記表層めっき層は、前記複数のリードのうち前記封止樹脂から露出するすべての部分に形成されている、請求項1に記載の半導体装置。
- 前記表層めっき層は、前記リードの母材よりもはんだ濡れ性が高い材質からなる、請求項1または2に記載の半導体装置。
- 前記リードの前記母材は、Cuである、請求項3に記載の半導体装置。
- 前記表層めっき層は、Auからなる、請求項4に記載の半導体装置。
- 前記表層めっき層は、置換型の無電解めっきによって形成されている、請求項1ないし5のいずれかに記載の半導体装置。
- 前記表層めっき層の少なくとも一部は、前記リードの母材に直接形成されている、請求項1ないし6のいずれかに記載の半導体装置。
- 前記リードには、前記表層めっき層の一部と前記リードの前記母材との間に介在する中層めっき層が形成されている、請求項7に記載の半導体装置。
- 前記リードには、前記表層めっき層から露出する中層めっき層が形成されている、請求項7に記載の半導体装置。
- 前記中層めっき層は、前記主面および前記裏面に形成されている、請求項8または9に記載の半導体装置。
- 前記表層めっき層のすべては、前記リードの前記母材に直接形成されている、請求項7に記載の半導体装置。
- 前記封止樹脂は、前記厚さ方向において互いに反対側を向く封止樹脂主面および封止樹脂裏面と、当該封止樹脂主面および当該封止樹脂裏面を繋ぐ封止樹脂側面を有し、
前記複数のリードの少なくともいずれかは、前記封止樹脂側面と面一である端子端面を有する、請求項7ないし11のいずれかに記載の半導体装置。 - 前記複数のリードのすべては、前記端子端面を有する、請求項12に記載の半導体装置。
- 前記封止樹脂の前記封止樹脂裏面と前記複数のリードの少なくともいずれかの前記裏面とは、互いに面一である、請求項12または13に記載の半導体装置。
- 前記封止樹脂裏面と前記複数のリードのすべての前記裏面とは、互いに面一である、請求項14に記載の半導体装置。
- 前記封止樹脂は、前記厚さ方向において互いに反対側を向く封止樹脂主面および封止樹脂裏面と、当該封止樹脂主面および当該封止樹脂裏面を繋ぐ封止樹脂側面を有し、
前記複数のリードの少なくともいずれかは、前記厚さ方向視において前記封止樹脂側面から突出している、請求項7ないし11のいずれかに記載の半導体装置。 - 前記複数のリードのすべては、前記厚さ方向視において前記封止樹脂側面から突出している、請求項16に記載の半導体装置。
- 前記リードは、前記封止樹脂側面から突出する方向を向く端子端面と、前記端子端面と前期封止樹脂側面との間に位置し且つ前記主面と前記裏面とを繋ぐ端子側面とを有している、請求項16または17に記載の半導体装置。
- 前記複数のリードの少なくともいずれかは、前記裏面から前記主面側に凹み且つ前記封止樹脂に覆われた裏面側凹部を有する、請求項7ないし18のいずれかに記載の半導体装置。
- 前記半導体素子は、前記厚さ方向視において前記裏面側凹部を避けた位置に配置されている、請求項19に記載の半導体装置。
- 前記半導体素子と前記複数のリードのいずれかとにボンディングされたワイヤを備えており、
前記ワイヤは、前記リードのうち前記厚さ方向視において前記裏面側凹部を避けた位置にボンディングされている、請求項20に記載の半導体装置。 - 前記封止樹脂は、前記厚さ方向において互いに反対側を向く封止樹脂主面および封止樹脂裏面と、当該封止樹脂主面および当該封止樹脂裏面を繋ぐ封止樹脂側面を有し、
前記複数のリードのいずれかは、前記封止樹脂側面から露出し且つ前記裏面に繋がるとともに前記表層めっき層が形成された端子端面を有し、
前記複数のリードのいずれかは、前記封止樹脂側面から露出し且つ前記裏面から離間するとともに前記表層めっき層が形成されていない端子端面を有する、請求項1に記載の半導体装置。 - 前記表層めっき層が形成された前記端子端面が露出する前記封止樹脂側面は、前記表層めっき層が形成された前記端子端面よりも厚さ方向視において外方に位置する第1部と前記表層めっき層が形成された前記端子端面に滑らかに繋がる第2部とを有する、請求項22に記載の半導体装置。
- 各々が厚さ方向において互いに反対側を向く主面および裏面を有するリードフレームを用意する工程と、
前記リードフレームの主面に半導体素子を搭載する工程と、
前記リードフレームの一部および前記半導体素子を覆う封止樹脂を形成する工程と、
前記リードフレームのうち前記封止樹脂から露出した部分の少なくとも一部に、置換型の無電解めっきにより表層めっき層を形成する工程と、
を備えることを特徴とする、半導体装置の製造方法。 - 前記封止樹脂を形成する工程の後であって、前記表層めっき層を形成する工程の前に、前記リードフレームを切断することにより、いずれかに前記半導体素子が搭載され且つ一部ずつが前記封止樹脂に覆われた複数のリードを形成する工程を備える、請求項24に記載の半導体装置の製造方法。
- 前記封止樹脂を形成する工程の後であって、前記表層めっき層を形成する工程の前に、前記封止樹脂および前記リードフレームの前記裏面に少なくとも開口するスリットを形成する工程を備え、
前記表層めっき層を形成する工程においては、前記リードフレームのうち前記スリットから露出した部位に、前記表層めっき層を形成する、請求項24に記載の半導体装置の製造方法。 - 前記表層めっき層は、前記リードの母材よりもはんだ濡れ性が高い材質からなる、請求項24ないし26のいずれかに記載の半導体装置の製造方法。
- 前記リードの前記母材は、Cuである、請求項27に記載の半導体装置の製造方法。
- 前記表層めっき層は、Auからなる、請求項28に記載の半導体装置の製造方法。
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