JP2017199788A - シリコンウェーハ - Google Patents
シリコンウェーハ Download PDFInfo
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- JP2017199788A JP2017199788A JP2016089272A JP2016089272A JP2017199788A JP 2017199788 A JP2017199788 A JP 2017199788A JP 2016089272 A JP2016089272 A JP 2016089272A JP 2016089272 A JP2016089272 A JP 2016089272A JP 2017199788 A JP2017199788 A JP 2017199788A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 19
- 239000010703 silicon Substances 0.000 title claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 107
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 107
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 104
- 239000002244 precipitate Substances 0.000 abstract description 52
- 238000005247 gettering Methods 0.000 abstract description 19
- 238000001556 precipitation Methods 0.000 abstract description 13
- 239000002131 composite material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 147
- 235000012431 wafers Nutrition 0.000 description 95
- 238000004088 simulation Methods 0.000 description 23
- 238000009826 distribution Methods 0.000 description 21
- 230000007423 decrease Effects 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 16
- 229910001385 heavy metal Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 239000002344 surface layer Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005352 clarification Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 102100031920 Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Human genes 0.000 description 1
- 101000992065 Homo sapiens Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thermal Sciences (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
【解決手段】空孔と酸素の複合体である空孔酸素複合体の濃度が、1.0×1012/cm3未満の最表層のデヌーデッドゾーン10と、デヌーデッドゾーン10のウェーハ深さ方向内側に隣り合って形成され、デヌーデッドゾーン10側から厚さ方向内側に向かって、前記空孔酸素複合体の濃度が1.0×1012/cm3以上、5.0×1012/cm3未満の範囲で次第に増加する、デヌーデッドゾーン10の幅に対応して幅が決められる中間層11と、中間層11のウェーハ深さ方向内側に隣り合って形成され、前記空孔酸素複合体の濃度が、5.0×1012/cm3以上のバルク層12と、を備えたシリコンウェーハを構成する。
【選択図】図1
Description
11 中間層
12 バルク層
Claims (5)
- 空孔と酸素の複合体である空孔酸素複合体の濃度が、1.0×1012/cm3未満の最表層のデヌーデッドゾーン(10)と、
前記デヌーデッドゾーン(10)のウェーハ深さ方向内側に隣り合って形成され、前記デヌーデッドゾーン(10)側から厚さ方向内側に向かって、前記空孔酸素複合体の濃度が1.0×1012/cm3以上、5.0×1012/cm3未満の範囲で次第に増加する、前記デヌーデッドゾーン(10)の幅tDZに対応して幅tIが決められる中間層(11)と、
前記中間層(11)のウェーハ深さ方向内側に隣り合って形成され、前記空孔酸素複合体の濃度が、5.0×1012/cm3以上のバルク層(12)と、
を備えたシリコンウェーハ。 - 前記デヌーデッドゾーン(10)の幅tDZと前記中間層(11)の幅tIとの間に、前記デヌーデッドゾーン(10)の幅tDZが3μm以上10μm未満の範囲で、tI≦(2.6tDZ+64)μmの関係が成立する請求項1に記載のシリコンウェーハ。
- 前記デヌーデッドゾーン(10)の幅tDZと前記中間層(11)の幅tIとの間に、前記デヌーデッドゾーン(10)の幅tDZが10μm以上100μm未満の範囲で、tI≦(0.3tDZ+87)μmの関係が成立する請求項2に記載のシリコンウェーハ。
- 前記デヌーデッドゾーン(10)の幅tDZが10μm以上100μm以下の範囲で、43μm≦tIの関係が成立する請求項3に記載のシリコンウェーハ。
- 前記中間層(11)における前記空孔酸素複合体の濃度のウェーハ深さ方向変化量の最大値が、5.0×1011/cm3・μm以上である請求項1から4のいずれか1項に記載のシリコンウェーハ。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016089272A JP6704781B2 (ja) | 2016-04-27 | 2016-04-27 | シリコンウェーハ |
PCT/JP2017/007177 WO2017187752A1 (ja) | 2016-04-27 | 2017-02-24 | シリコンウェーハ |
CN201780025439.1A CN109075076B (zh) | 2016-04-27 | 2017-02-24 | 硅晶片 |
DE112017002225.8T DE112017002225B4 (de) | 2016-04-27 | 2017-02-24 | Siliziumwafer |
US16/096,745 US10648101B2 (en) | 2016-04-27 | 2017-02-24 | Silicon wafer |
KR1020187030294A KR102162948B1 (ko) | 2016-04-27 | 2017-02-24 | 실리콘 웨이퍼 |
TW106110310A TWI711727B (zh) | 2016-04-27 | 2017-03-28 | 矽晶圓 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016089272A JP6704781B2 (ja) | 2016-04-27 | 2016-04-27 | シリコンウェーハ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017199788A true JP2017199788A (ja) | 2017-11-02 |
JP6704781B2 JP6704781B2 (ja) | 2020-06-03 |
Family
ID=60161336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016089272A Active JP6704781B2 (ja) | 2016-04-27 | 2016-04-27 | シリコンウェーハ |
Country Status (7)
Country | Link |
---|---|
US (1) | US10648101B2 (ja) |
JP (1) | JP6704781B2 (ja) |
KR (1) | KR102162948B1 (ja) |
CN (1) | CN109075076B (ja) |
DE (1) | DE112017002225B4 (ja) |
TW (1) | TWI711727B (ja) |
WO (1) | WO2017187752A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2024008390A (ja) * | 2022-07-08 | 2024-01-19 | 株式会社Sumco | シリコンウェーハ及びその製造方法 |
Citations (3)
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JP2005311200A (ja) * | 2004-04-23 | 2005-11-04 | Komatsu Electronic Metals Co Ltd | シリコン半導体基板の熱処理方法及び同方法で処理されたシリコン半導体基板 |
JP2007534579A (ja) * | 2003-07-08 | 2007-11-29 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 安定化された理想的酸素析出シリコンウエハを製造する方法 |
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2016
- 2016-04-27 JP JP2016089272A patent/JP6704781B2/ja active Active
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2017
- 2017-02-24 KR KR1020187030294A patent/KR102162948B1/ko active IP Right Grant
- 2017-02-24 WO PCT/JP2017/007177 patent/WO2017187752A1/ja active Application Filing
- 2017-02-24 US US16/096,745 patent/US10648101B2/en active Active
- 2017-02-24 CN CN201780025439.1A patent/CN109075076B/zh active Active
- 2017-02-24 DE DE112017002225.8T patent/DE112017002225B4/de active Active
- 2017-03-28 TW TW106110310A patent/TWI711727B/zh active
Patent Citations (3)
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DE112017002225B4 (de) | 2021-04-15 |
TW201802305A (zh) | 2018-01-16 |
DE112017002225T5 (de) | 2019-01-10 |
WO2017187752A1 (ja) | 2017-11-02 |
CN109075076B (zh) | 2023-03-24 |
US10648101B2 (en) | 2020-05-12 |
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