JP2017163135A5 - - Google Patents

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Publication number
JP2017163135A5
JP2017163135A5 JP2017029015A JP2017029015A JP2017163135A5 JP 2017163135 A5 JP2017163135 A5 JP 2017163135A5 JP 2017029015 A JP2017029015 A JP 2017029015A JP 2017029015 A JP2017029015 A JP 2017029015A JP 2017163135 A5 JP2017163135 A5 JP 2017163135A5
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JP
Japan
Prior art keywords
circuit board
semiconductor module
substrate
semiconductor device
receptacle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2017029015A
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English (en)
Japanese (ja)
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JP2017163135A (ja
JP6764807B2 (ja
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Publication date
Priority claimed from EP16159199.5A external-priority patent/EP3217774B1/en
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Publication of JP2017163135A publication Critical patent/JP2017163135A/ja
Publication of JP2017163135A5 publication Critical patent/JP2017163135A5/ja
Application granted granted Critical
Publication of JP6764807B2 publication Critical patent/JP6764807B2/ja
Active legal-status Critical Current
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JP2017029015A 2016-03-08 2017-02-20 半導体モジュール Active JP6764807B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16159199.5 2016-03-08
EP16159199.5A EP3217774B1 (en) 2016-03-08 2016-03-08 Semiconductor module

Publications (3)

Publication Number Publication Date
JP2017163135A JP2017163135A (ja) 2017-09-14
JP2017163135A5 true JP2017163135A5 (cg-RX-API-DMAC7.html) 2020-02-27
JP6764807B2 JP6764807B2 (ja) 2020-10-07

Family

ID=55532152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017029015A Active JP6764807B2 (ja) 2016-03-08 2017-02-20 半導体モジュール

Country Status (4)

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US (1) US10079193B2 (cg-RX-API-DMAC7.html)
EP (1) EP3217774B1 (cg-RX-API-DMAC7.html)
JP (1) JP6764807B2 (cg-RX-API-DMAC7.html)
CN (1) CN107170718B (cg-RX-API-DMAC7.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3449502B1 (en) 2016-04-26 2021-06-30 Linear Technology LLC Mechanically-compliant and electrically and thermally conductive leadframes for component-on-package circuits
JP2018170362A (ja) * 2017-03-29 2018-11-01 株式会社東芝 半導体モジュール
CN110785838B (zh) * 2017-05-02 2023-10-24 日立能源瑞士股份公司 具有暴露的端子区域的树脂封装功率半导体模块
EP3410481A1 (en) * 2017-06-01 2018-12-05 HS Elektronik Systeme GmbH Power semiconductor chip module
CN110998832B (zh) * 2017-07-28 2023-10-13 三菱电机株式会社 半导体装置以及半导体模块
KR102048478B1 (ko) * 2018-03-20 2019-11-25 엘지전자 주식회사 양면냉각형 파워 모듈 및 그의 제조 방법
US10497635B2 (en) 2018-03-27 2019-12-03 Linear Technology Holding Llc Stacked circuit package with molded base having laser drilled openings for upper package
US11410977B2 (en) 2018-11-13 2022-08-09 Analog Devices International Unlimited Company Electronic module for high power applications
TWI730604B (zh) * 2019-01-22 2021-06-11 美商莫仕有限公司 使用專用電子封裝製造工藝的智能連接器及其製造方法
DE102019210902A1 (de) * 2019-07-23 2021-01-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verbindungsmethode für leistungsmodule mit einer zwischenkreisverschienung
US11521921B2 (en) * 2019-09-04 2022-12-06 Semiconductor Components Industries, Llc Semiconductor device package assemblies and methods of manufacture
JP7224272B2 (ja) * 2019-10-30 2023-02-17 三菱電機株式会社 パワー半導体装置
EP3896726A1 (de) * 2020-04-17 2021-10-20 Siemens Aktiengesellschaft Halbleitermodul mit einem gehäuse
US11844178B2 (en) 2020-06-02 2023-12-12 Analog Devices International Unlimited Company Electronic component
EP4205171A1 (en) 2020-08-27 2023-07-05 Hitachi Energy Switzerland AG Power semiconductor module and manufacturing method
JP3245176U (ja) * 2020-09-17 2024-01-09 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト パワーモジュールおよびパワーモジュールの製造方法
US11495525B2 (en) * 2021-03-03 2022-11-08 Hong Kong Applied Science and Technology Research Institute Company Limited Electronic module having a groove anchoring terminal pins
DE102021206935B4 (de) * 2021-07-01 2024-01-25 Vitesco Technologies Germany Gmbh Leistungshalbbrückenmodul, Leistungsinverter, Verfahren zur Herstellung eines Leistungshalbbrückenmoduls
DE102021208497A1 (de) * 2021-08-05 2023-02-09 Vitesco Technologies Germany Gmbh Leistungsschaltung
US20240404926A1 (en) * 2023-05-31 2024-12-05 Semiconductor Components Industries, Llc Power module package with molded via and dual side press-fit pin

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Publication number Priority date Publication date Assignee Title
JPH08162569A (ja) * 1994-12-08 1996-06-21 Fuji Electric Co Ltd 半導体装置
GB0018643D0 (en) * 2000-07-31 2000-09-13 Koninkl Philips Electronics Nv Semiconductor devices
JP4218193B2 (ja) * 2000-08-24 2009-02-04 三菱電機株式会社 パワーモジュール
JP4453498B2 (ja) * 2004-09-22 2010-04-21 富士電機システムズ株式会社 パワー半導体モジュールおよびその製造方法
JP4985116B2 (ja) * 2007-03-08 2012-07-25 富士電機株式会社 半導体装置およびその製造方法
US7791177B2 (en) 2007-12-10 2010-09-07 Infineon Technologies Ag Electronic device
US7983046B1 (en) * 2010-02-22 2011-07-19 Delphi Technologies, Inc. Electronic control module and enclosed power module
JP5583433B2 (ja) * 2010-03-05 2014-09-03 株式会社ケーヒン 半導体装置
JP5312386B2 (ja) * 2010-03-23 2013-10-09 日立オートモティブシステムズ株式会社 電力変換装置
JP5518000B2 (ja) * 2011-06-10 2014-06-11 三菱電機株式会社 パワーモジュールとその製造方法
KR101443985B1 (ko) * 2012-12-14 2014-11-03 삼성전기주식회사 전력 모듈 패키지
DK177868B1 (en) 2013-04-08 2014-10-20 Danfoss Silicon Power Gmbh Contact mechansim for electrical substrates
DE102013219833B4 (de) * 2013-09-30 2020-02-13 Infineon Technologies Ag Halbleitermodul mit leiterplatte und vefahren zur hertellung eines halbleitermoduls mit einer leiterplatte
JP6246051B2 (ja) * 2014-04-17 2017-12-13 三菱電機株式会社 電力半導体装置およびその製造方法
JP5893082B2 (ja) * 2014-06-18 2016-03-23 三菱電機株式会社 電力変換装置

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