JP2017154908A - ダイヤモンド基板の製造方法、ダイヤモンド基板及びダイヤモンド自立基板 - Google Patents
ダイヤモンド基板の製造方法、ダイヤモンド基板及びダイヤモンド自立基板 Download PDFInfo
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- 239000010432 diamond Substances 0.000 title claims abstract description 501
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 467
- 239000000758 substrate Substances 0.000 title claims abstract description 198
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 239000000463 material Substances 0.000 claims description 72
- 239000011800 void material Substances 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 230000007547 defect Effects 0.000 abstract description 31
- 239000010410 layer Substances 0.000 description 85
- 230000035882 stress Effects 0.000 description 27
- 239000013078 crystal Substances 0.000 description 26
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 25
- 239000007789 gas Substances 0.000 description 20
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 18
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 18
- 239000000395 magnesium oxide Substances 0.000 description 18
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 17
- 238000005530 etching Methods 0.000 description 13
- 239000010931 gold Substances 0.000 description 12
- 230000008646 thermal stress Effects 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000010948 rhodium Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 229910052703 rhodium Inorganic materials 0.000 description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 208000012868 Overgrowth Diseases 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000008685 targeting Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- -1 first Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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Abstract
【解決手段】下地表面にパターン状のダイヤモンドを設ける第一の工程と、第一の工程で設けたパターン状のダイヤモンドからダイヤモンドを成長させて、第一の工程で設けたパターン状のダイヤモンドにおけるパターン間隙にダイヤモンドを形成する第二の工程と、前記第一の工程で設けたパターン状のダイヤモンドを取り除き、第二の工程で形成したダイヤモンドからなるパターン状のダイヤモンドを形成する第三の工程と、第三の工程で形成したパターン状のダイヤモンドからダイヤモンドを成長させて、第三の工程で形成したパターン状のダイヤモンドにおけるパターン間隙にダイヤモンドを形成する第四の工程とを含むことを特徴とするダイヤモンド基板の製造方法。
【選択図】図1
Description
下地表面にパターン状のダイヤモンドを設ける第一の工程と、
該第一の工程で設けたパターン状のダイヤモンドからダイヤモンドを成長させて、前記第一の工程で設けたパターン状のダイヤモンドにおけるパターン間隙にダイヤモンドを形成する第二の工程と、
前記第一の工程で設けたパターン状のダイヤモンドを取り除き、前記第二の工程で形成したダイヤモンドからなるパターン状のダイヤモンドを形成する第三の工程と、
前記第三の工程で形成したパターン状のダイヤモンドからダイヤモンドを成長させて、前記第三の工程で形成したパターン状のダイヤモンドにおけるパターン間隙にダイヤモンドを形成する第四の工程と、
を含むことを特徴とするダイヤモンド基板の製造方法を提供する。
下地表面にパターン状のダイヤモンドを設ける第一の工程と、
該第一の工程で設けたパターン状のダイヤモンドからダイヤモンドを成長させて、前記第一の工程で設けたパターン状のダイヤモンドにおけるパターン間隙にダイヤモンドを形成する第二の工程と、
前記第一の工程で設けたパターン状のダイヤモンドを取り除き、前記第二の工程で形成したダイヤモンドからなるパターン状のダイヤモンドを形成する第三の工程と、
前記第三の工程で形成したパターン状のダイヤモンドからダイヤモンドを成長させて、前記第三の工程で形成したパターン状のダイヤモンドにおけるパターン間隙にダイヤモンドを形成する第四の工程と、
を含むことを特徴とするダイヤモンド基板の製造方法を提供する。
図3に示した方法により、ダイヤモンド基板を製造した。
図1に示した方法により、ダイヤモンド基板を製造した。
まず、直径10.0mm、厚さ1.0mm、表面が(100)面となる両面研磨された単結晶シリコン(Si)基板を準備した。
Claims (21)
- ダイヤモンド基板の製造方法であって、
下地表面にパターン状のダイヤモンドを設ける第一の工程と、
該第一の工程で設けたパターン状のダイヤモンドからダイヤモンドを成長させて、前記第一の工程で設けたパターン状のダイヤモンドにおけるパターン間隙にダイヤモンドを形成する第二の工程と、
前記第一の工程で設けたパターン状のダイヤモンドを取り除き、前記第二の工程で形成したダイヤモンドからなるパターン状のダイヤモンドを形成する第三の工程と、
前記第三の工程で形成したパターン状のダイヤモンドからダイヤモンドを成長させて、前記第三の工程で形成したパターン状のダイヤモンドにおけるパターン間隙にダイヤモンドを形成する第四の工程と、
を含むことを特徴とするダイヤモンド基板の製造方法。 - 前記下地表面を構成する材料を、ダイヤモンドとすることを特徴とする請求項1に記載のダイヤモンド基板の製造方法。
- 前記下地表面を構成する材料を、ダイヤモンドではない異種材料とすることを特徴とする請求項1に記載のダイヤモンド基板の製造方法。
- 前記第二の工程より前に、前記第一の工程において下地表面に設けたパターン状のダイヤモンドの壁面に付着した異種付着物を除去することを特徴とする請求項1から請求項3のいずれか一項に記載のダイヤモンド基板の製造方法。
- 前記第一の工程において設けるパターン状のダイヤモンドにおけるパターン間隙の深さDと幅Wの比であるD/Wを、0.1以上とすることを特徴とする請求項1から請求項4のいずれか一項に記載のダイヤモンド基板の製造方法。
- 前記第一の工程において設けるパターン状のダイヤモンドにおけるパターン間隙の底部の少なくとも一部を、貫通させることを特徴とする請求項1から請求項5のいずれか一項に記載のダイヤモンド基板の製造方法。
- 前記第一の工程において設けるパターン状のダイヤモンドにおけるパターン間隙の底部の少なくとも一部を、前記下地表面よりも下方に設けることを特徴とする請求項3に記載のダイヤモンド基板の製造方法。
- 前記第二の工程において、化学気相成長法を用いてダイヤモンドを成長させることを特徴とする請求項1から請求項7のいずれか一項に記載のダイヤモンド基板の製造方法。
- 前記第二の工程において成長させるダイヤモンドにボイドを形成することを特徴とする請求項1から請求項8のいずれか一項に記載のダイヤモンド基板の製造方法。
- 前記第四の工程より前に、前記第三の工程において形成したパターン状のダイヤモンドの壁面に付着した異種付着物を除去することを特徴とする請求項1から請求項9のいずれか一項に記載のダイヤモンド基板の製造方法。
- 前記第三の工程において形成するパターン状のダイヤモンドにおけるパターン間隙の深さDと幅Wの比であるD/Wを、0.1以上とすることを特徴とする請求項1から請求項10のいずれか一項に記載のダイヤモンド基板の製造方法。
- 前記第三の工程において形成するパターン状のダイヤモンドにおけるパターン間隙の底部の少なくとも一部を、貫通させることを特徴とする請求項1から請求項11のいずれか一項に記載のダイヤモンド基板の製造方法。
- 前記第三の工程において形成するパターン状のダイヤモンドにおけるパターン間隙の底部の少なくとも一部を、前記下地表面よりも下方に設けることを特徴とする請求項3または請求項7に記載のダイヤモンド基板の製造方法。
- 前記第三の工程において、前記第二の工程で形成したダイヤモンドを、第一の工程で設けたパターン状のダイヤモンドとの境界から5μm以上30μm以下の位置まで取り除くことを特徴とする請求項1から請求項13のいずれか一項に記載のダイヤモンド基板の製造方法。
- 前記第四の工程において、化学気相成長法を用いてダイヤモンドを成長させることを特徴とする請求項1から請求項14のいずれか一項に記載のダイヤモンド基板の製造方法。
- 前記第四の工程において成長させるダイヤモンドにボイドを形成することを特徴とする請求項1から請求項15のいずれか一項に記載のダイヤモンド基板の製造方法。
- 少なくとも一方の表面を構成する材料がダイヤモンドであるダイヤモンド基板であって、内部にボイドを有することを特徴とするダイヤモンド基板。
- 前記ダイヤモンド基板は、下地と該下地の表面上に形成されたダイヤモンド層からなり、前記下地と前記ダイヤモンド層との境界に接してボイドを有することを特徴とする請求項17に記載のダイヤモンド基板。
- ダイヤモンド自立基板であって、一方の表面にボイドを有することを特徴とするダイヤモンド自立基板。
- 下地と該下地の表面上に形成されたダイヤモンド層からなるダイヤモンド基板であって、前記下地の裏面に開口部を有することを特徴とするダイヤモンド基板。
- 少なくとも一方の表面を構成する材料がダイヤモンドであるダイヤモンド基板であって、少なくとも一方の表面全体が、横方向成長ダイヤモンド、及び、横方向成長ダイヤモンドからの成長ダイヤモンドの少なくともいずれか一方で構成されたものであることを特徴とするダイヤモンド基板。
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