EP3211657A3 - Method for manufacturing diamond substrate, diamond substrate, and freestanding diamond substrate - Google Patents
Method for manufacturing diamond substrate, diamond substrate, and freestanding diamond substrate Download PDFInfo
- Publication number
- EP3211657A3 EP3211657A3 EP17000294.3A EP17000294A EP3211657A3 EP 3211657 A3 EP3211657 A3 EP 3211657A3 EP 17000294 A EP17000294 A EP 17000294A EP 3211657 A3 EP3211657 A3 EP 3211657A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- diamond
- diamond substrate
- patterned
- manufacturing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title abstract 19
- 239000010432 diamond Substances 0.000 title abstract 19
- 239000000758 substrate Substances 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 230000007547 defect Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02376—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02085—Cleaning of diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016037175A JP6679022B2 (ja) | 2016-02-29 | 2016-02-29 | ダイヤモンド基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3211657A2 EP3211657A2 (en) | 2017-08-30 |
EP3211657A3 true EP3211657A3 (en) | 2017-11-15 |
Family
ID=58264335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP17000294.3A Pending EP3211657A3 (en) | 2016-02-29 | 2017-02-23 | Method for manufacturing diamond substrate, diamond substrate, and freestanding diamond substrate |
Country Status (6)
Country | Link |
---|---|
US (2) | US10253426B2 (ja) |
EP (1) | EP3211657A3 (ja) |
JP (1) | JP6679022B2 (ja) |
KR (1) | KR20170101798A (ja) |
CN (1) | CN107130294B (ja) |
TW (1) | TWI745350B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210363016A1 (en) * | 2015-02-09 | 2021-11-25 | Saeed Alhassan Alkhazraji | Process for Manufacturing a Pure Porous 3D Diamond |
US10494713B2 (en) * | 2015-04-16 | 2019-12-03 | Ii-Vi Incorporated | Method of forming an optically-finished thin diamond film, diamond substrate, or diamond window of high aspect ratio |
GB2562918B (en) * | 2016-03-18 | 2021-01-27 | Mitsubishi Electric Corp | Semiconductor device and method of manufacturing semiconductor device |
CN110241386B (zh) * | 2018-03-09 | 2024-02-09 | 深圳先进技术研究院 | 一种掺硼金刚石电极及其制备方法和应用 |
CN108598036B (zh) * | 2018-06-26 | 2020-03-27 | 苏州汉骅半导体有限公司 | 金刚石基氮化镓器件制造方法 |
GB201811162D0 (en) | 2018-07-06 | 2018-08-29 | Element Six Tech Ltd | Method of manufacture of single crystal synthetic diamond material |
CN113939918A (zh) * | 2019-06-18 | 2022-01-14 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN111206280B (zh) * | 2020-01-07 | 2021-02-12 | 北京科技大学 | 一种高质量大尺寸单晶金刚石外延生长的方法 |
KR102393733B1 (ko) * | 2020-05-07 | 2022-05-06 | 한국세라믹기술원 | 반도체용 다이아몬드 박막 제조방법 |
WO2022192666A1 (en) * | 2021-03-12 | 2022-09-15 | Akash Systems, Inc. | Substrate features in thermally conductive materials |
CN113716560A (zh) * | 2021-07-15 | 2021-11-30 | 哈尔滨工业大学(威海) | 一种人造金刚石表面刻蚀的方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2228745A (en) * | 1989-01-10 | 1990-09-05 | Kobe Steel Ltd | Process for the selective deposition of thin diamond film gas phase synthesis |
EP0612868A1 (en) * | 1993-02-22 | 1994-08-31 | Sumitomo Electric Industries, Ltd. | Single crystal diamond and process for producing the same |
EP0745707A1 (en) * | 1995-05-31 | 1996-12-04 | Air Products And Chemicals, Inc. | Method for the growth of large single crystals |
EP1052684A1 (en) * | 1999-05-10 | 2000-11-15 | Toyoda Gosei Co., Ltd. | A method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor |
CN104651928A (zh) * | 2015-01-17 | 2015-05-27 | 王宏兴 | 金刚石同质外延横向生长方法 |
WO2016024564A1 (ja) * | 2014-08-11 | 2016-02-18 | 住友電気工業株式会社 | ダイヤモンド複合体、基板、ダイヤモンド、ダイヤモンドを備える工具およびダイヤモンドの製造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4925701A (en) * | 1988-05-27 | 1990-05-15 | Xerox Corporation | Processes for the preparation of polycrystalline diamond films |
US5242711A (en) * | 1991-08-16 | 1993-09-07 | Rockwell International Corp. | Nucleation control of diamond films by microlithographic patterning |
US5989511A (en) * | 1991-11-25 | 1999-11-23 | The University Of Chicago | Smooth diamond films as low friction, long wear surfaces |
US5552345A (en) * | 1993-09-22 | 1996-09-03 | Harris Corporation | Die separation method for silicon on diamond circuit structures |
US5686152A (en) * | 1995-08-03 | 1997-11-11 | Johnson; Linda F. | Metal initiated nucleation of diamond |
KR100677683B1 (ko) | 1999-03-17 | 2007-02-05 | 미츠비시 덴센 고교 가부시키가이샤 | 반도체 기재와 그 제조 방법 및 반도체 결정의 제조 방법 |
DE10039208A1 (de) * | 2000-08-10 | 2002-04-18 | Fraunhofer Ges Forschung | Verfahren zur Herstellung eines Werkzeugs, das zur Schaffung optisch wirksamer Oberflächenstrukturen im sub-mum Bereich einsetzbar ist, sowie ein diesbezügliches Werkzeug |
CN1300387C (zh) * | 2004-11-12 | 2007-02-14 | 南京大学 | 无掩膜横向外延生长高质量氮化镓 |
US8470701B2 (en) * | 2008-04-03 | 2013-06-25 | Advanced Diamond Technologies, Inc. | Printable, flexible and stretchable diamond for thermal management |
JP5299921B2 (ja) * | 2008-04-17 | 2013-09-25 | 独立行政法人産業技術総合研究所 | ダイヤモンド半導体装置及びその製造方法 |
JP2010222172A (ja) * | 2009-03-23 | 2010-10-07 | Nippon Telegr & Teleph Corp <Ntt> | ダイヤモンド薄膜及びその製造方法 |
JP2011079683A (ja) * | 2009-10-02 | 2011-04-21 | Shin-Etsu Chemical Co Ltd | 単結晶ダイヤモンド成長用基材及び単結晶ダイヤモンド基板の製造方法 |
US9277792B2 (en) * | 2010-08-24 | 2016-03-08 | Board Of Trustees Of Michigan State University | Multicolored single crystal diamond gemstones and methods for forming the same |
US20120288698A1 (en) * | 2011-03-23 | 2012-11-15 | Advanced Diamond Technology, Inc | Method of fabrication, device structure and submount comprising diamond on metal substrate for thermal dissipation |
JP5831795B2 (ja) * | 2011-09-06 | 2015-12-09 | 住友電気工業株式会社 | ダイヤモンド複合体およびそれから分離した単結晶ダイヤモンド |
SG195494A1 (en) * | 2012-05-18 | 2013-12-30 | Novellus Systems Inc | Carbon deposition-etch-ash gap fill process |
FR3022563B1 (fr) * | 2014-06-23 | 2016-07-15 | Univ Paris Xiii Paris-Nord Villetaneuse | Procede de formation d'un monocristal de materiau a partir d'un substrat monocristallin |
WO2015199180A1 (ja) * | 2014-06-25 | 2015-12-30 | 住友電気工業株式会社 | ダイヤモンド基板の製造方法、ダイヤモンド基板、及び、ダイヤモンド複合基板 |
CN104724664A (zh) * | 2015-03-14 | 2015-06-24 | 王宏兴 | 单晶金刚石纳米柱阵列结构的制备方法和应用 |
CN104775154B (zh) * | 2015-04-25 | 2017-06-27 | 哈尔滨工业大学 | 一种同质外延生长单晶金刚石时控制表面温度的方法 |
JP6699015B2 (ja) * | 2016-02-29 | 2020-05-27 | 信越化学工業株式会社 | ダイヤモンド基板の製造方法 |
-
2016
- 2016-02-29 JP JP2016037175A patent/JP6679022B2/ja active Active
-
2017
- 2017-02-22 KR KR1020170023624A patent/KR20170101798A/ko not_active Application Discontinuation
- 2017-02-23 EP EP17000294.3A patent/EP3211657A3/en active Pending
- 2017-02-23 TW TW106106033A patent/TWI745350B/zh active
- 2017-02-24 CN CN201710106146.8A patent/CN107130294B/zh active Active
- 2017-02-28 US US15/445,134 patent/US10253426B2/en active Active
-
2018
- 2018-11-02 US US16/179,363 patent/US11066757B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2228745A (en) * | 1989-01-10 | 1990-09-05 | Kobe Steel Ltd | Process for the selective deposition of thin diamond film gas phase synthesis |
EP0612868A1 (en) * | 1993-02-22 | 1994-08-31 | Sumitomo Electric Industries, Ltd. | Single crystal diamond and process for producing the same |
EP0745707A1 (en) * | 1995-05-31 | 1996-12-04 | Air Products And Chemicals, Inc. | Method for the growth of large single crystals |
EP1052684A1 (en) * | 1999-05-10 | 2000-11-15 | Toyoda Gosei Co., Ltd. | A method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor |
WO2016024564A1 (ja) * | 2014-08-11 | 2016-02-18 | 住友電気工業株式会社 | ダイヤモンド複合体、基板、ダイヤモンド、ダイヤモンドを備える工具およびダイヤモンドの製造方法 |
EP3181736A1 (en) * | 2014-08-11 | 2017-06-21 | Sumitomo Electric Industries, Ltd. | Diamond composite body, substrate, diamond, tool provided with diamond and diamond manufacturing method |
CN104651928A (zh) * | 2015-01-17 | 2015-05-27 | 王宏兴 | 金刚石同质外延横向生长方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2017154908A (ja) | 2017-09-07 |
JP6679022B2 (ja) | 2020-04-15 |
CN107130294A (zh) | 2017-09-05 |
US10253426B2 (en) | 2019-04-09 |
US20170247811A1 (en) | 2017-08-31 |
TWI745350B (zh) | 2021-11-11 |
TW201800627A (zh) | 2018-01-01 |
US11066757B2 (en) | 2021-07-20 |
US20190093253A1 (en) | 2019-03-28 |
KR20170101798A (ko) | 2017-09-06 |
CN107130294B (zh) | 2021-05-28 |
EP3211657A2 (en) | 2017-08-30 |
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