JP2017126742A - 誘電体ミラーベースのマルチスペクトルフィルタアレイ - Google Patents

誘電体ミラーベースのマルチスペクトルフィルタアレイ Download PDF

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Publication number
JP2017126742A
JP2017126742A JP2016255688A JP2016255688A JP2017126742A JP 2017126742 A JP2017126742 A JP 2017126742A JP 2016255688 A JP2016255688 A JP 2016255688A JP 2016255688 A JP2016255688 A JP 2016255688A JP 2017126742 A JP2017126742 A JP 2017126742A
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Prior art keywords
layer
layers
dielectric mirror
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substrate
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JP2016255688A
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Japanese (ja)
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JP2017126742A5 (enExample
Inventor
ゲオルク・イョット・オッケンフス
J Ockenfuss Georg
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Viavi Solutions Inc
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Viavi Solutions Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36—Investigating two or more bands of a spectrum by separate detectors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/156—CCD or CID colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J2003/1204—Grating and filter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G01J2003/2806—Array and filter array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2823—Imaging spectrometer
    • G01J2003/2826—Multispectral imaging, e.g. filter imaging

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Filters (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Surface Treatment Of Optical Elements (AREA)
JP2016255688A 2015-12-29 2016-12-28 誘電体ミラーベースのマルチスペクトルフィルタアレイ Pending JP2017126742A (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201562272086P 2015-12-29 2015-12-29
US62/272,086 2015-12-29
US201662294970P 2016-02-12 2016-02-12
US62/294,970 2016-02-12
US15/388,543 US9960199B2 (en) 2015-12-29 2016-12-22 Dielectric mirror based multispectral filter array
US15/388,543 2016-12-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020171080A Division JP2021007175A (ja) 2015-12-29 2020-10-09 誘電体ミラーベースのマルチスペクトルフィルタアレイ

Publications (2)

Publication Number Publication Date
JP2017126742A true JP2017126742A (ja) 2017-07-20
JP2017126742A5 JP2017126742A5 (enExample) 2020-01-30

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Family Applications (3)

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JP2016255688A Pending JP2017126742A (ja) 2015-12-29 2016-12-28 誘電体ミラーベースのマルチスペクトルフィルタアレイ
JP2020171080A Pending JP2021007175A (ja) 2015-12-29 2020-10-09 誘電体ミラーベースのマルチスペクトルフィルタアレイ
JP2021135733A Active JP7663457B2 (ja) 2015-12-29 2021-08-23 誘電体ミラーベースのマルチスペクトルフィルタアレイ

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JP2020171080A Pending JP2021007175A (ja) 2015-12-29 2020-10-09 誘電体ミラーベースのマルチスペクトルフィルタアレイ
JP2021135733A Active JP7663457B2 (ja) 2015-12-29 2021-08-23 誘電体ミラーベースのマルチスペクトルフィルタアレイ

Country Status (7)

Country Link
US (2) US9960199B2 (enExample)
EP (1) EP3187910B1 (enExample)
JP (3) JP2017126742A (enExample)
KR (1) KR102478185B1 (enExample)
CN (1) CN107015302A (enExample)
CA (1) CA2952908A1 (enExample)
TW (1) TWI731912B (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019023722A (ja) * 2017-07-24 2019-02-14 ヴァイアヴィ・ソリューションズ・インコーポレイテッドＶｉａｖｉ Ｓｏｌｕｔｉｏｎｓ Ｉｎｃ． 光学フィルタ
JP2019035954A (ja) * 2017-08-16 2019-03-07 ルーメンタム オペレーションズ エルエルシーＬｕｍｅｎｔｕｍ Ｏｐｅｒａｔｉｏｎｓ ＬＬＣ 多レベル回折光学素子の薄膜コーティング
JP2019144533A (ja) * 2017-12-08 2019-08-29 ヴァイアヴィ・ソリューションズ・インコーポレイテッドＶｉａｖｉ Ｓｏｌｕｔｉｏｎｓ Ｉｎｃ． 多重スペクトルセンサの応答バランス取り
KR20190108072A (ko) * 2018-03-13 2019-09-23 비아비 솔루션즈 아이엔씨. 센서 윈도우
JP2020021052A (ja) * 2018-07-30 2020-02-06 ヴァイアヴィ・ソリューションズ・インコーポレイテッドＶｉａｖｉ Ｓｏｌｕｔｉｏｎｓ Ｉｎｃ． マルチスペクトルフィルタ
JP2020071488A (ja) * 2018-11-02 2020-05-07 ヴァイアヴィ・ソリューションズ・インコーポレイテッドＶｉａｖｉ Ｓｏｌｕｔｉｏｎｓ Ｉｎｃ． 階段構造光学フィルタ
US11493676B2 (en) 2018-03-13 2022-11-08 Viavi Solutions Inc. Sensor window comprising a plurality of sets of layers to reflect one or more colors of light that match a surface adjacent to the sensor window
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US10495516B2 (en) * 2015-06-30 2019-12-03 Imec Vzw Dedicated transformation spectroscopy
US9960199B2 (en) * 2015-12-29 2018-05-01 Viavi Solutions Inc. Dielectric mirror based multispectral filter array
US9923007B2 (en) 2015-12-29 2018-03-20 Viavi Solutions Inc. Metal mirror based multispectral filter array
EP3462148B1 (en) * 2017-09-28 2023-09-06 ams AG Optical sensing device and method for manufacturing the optical sensing device
US11366011B2 (en) 2019-02-13 2022-06-21 Viavi Solutions Inc. Optical device
CN109932058A (zh) * 2019-03-28 2019-06-25 浙江大学 一种基于阵列滤光片的微型光谱仪
CN110190078A (zh) * 2019-05-29 2019-08-30 中国科学院微电子研究所 一种高光谱图像传感器的单片集成方法
US11789188B2 (en) * 2019-07-19 2023-10-17 Viavi Solutions Inc. Optical filter
KR20210014491A (ko) * 2019-07-30 2021-02-09 삼성전자주식회사 광 필터 및 이를 포함하는 분광기
US11693164B2 (en) * 2019-10-09 2023-07-04 Viavi Solutions Inc. Multi-transmission optical filter
US11914181B2 (en) 2020-04-08 2024-02-27 Samsung Electronics Co., Ltd. Optical filter and spectrometer including the same
CN115993185A (zh) * 2021-10-18 2023-04-21 天津津航技术物理研究所 宽自由光谱范围的多光谱成像芯片结构
CN117309140A (zh) * 2022-06-21 2023-12-29 清华大学 针对特定应用光谱库的光谱芯片结构设计方法及装置

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