JP6812238B2 - 金属ミラーベースのマルチスペクトルフィルタアレイ - Google Patents
金属ミラーベースのマルチスペクトルフィルタアレイ Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims description 39
- 239000002184 metal Substances 0.000 title claims description 39
- 239000010410 layer Substances 0.000 claims description 274
- 125000006850 spacer group Chemical group 0.000 claims description 160
- 230000003287 optical effect Effects 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 52
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- 239000011787 zinc oxide Substances 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 230000001629 suppression Effects 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 239000006117 anti-reflective coating Substances 0.000 claims 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 49
- 230000008569 process Effects 0.000 description 48
- 230000003595 spectral effect Effects 0.000 description 23
- 238000000151 deposition Methods 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- OBOYOXRQUWVUFU-UHFFFAOYSA-N [O-2].[Ti+4].[Nb+5] Chemical compound [O-2].[Ti+4].[Nb+5] OBOYOXRQUWVUFU-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000000059 patterning Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000007735 ion beam assisted deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0208—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using focussing or collimating elements, e.g. lenses or mirrors; performing aberration correction
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- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
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- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0229—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using masks, aperture plates, spatial light modulators or spatial filters, e.g. reflective filters
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- G01J3/12—Generating the spectrum; Monochromators
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- H01L31/02—Details
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
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- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
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- G01J2003/282—Modified CCD or like
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- G01J2003/2826—Multispectral imaging, e.g. filter imaging
Description
tmax=2*(λmax/(4*nref));
tmin=2*(λmin/(4*nref));
と決定されてもよく、ここで、tmaxは、情報が捕獲される最も高い中心波長のためにミラー構造のセットを分離するスペーサ層の合計の厚さを表し、λmaxは、情報が捕獲される最も高い中心波長を表し、nrefは、スペーサ層の屈折率を表し、tminは、情報が捕獲される最も低い中心波長のためにミラー構造のセットを分離するスペーサ層の合計の厚さを表し、およびλminは、情報が捕獲される最も高い中心波長を表す。
c=2x;
と決定されてもよく、ここで、cは、堆積されたスペーサ層の所与の数xに対して生成されることができるチャネルの最大数を表す。いくつかの実施形態では、スペーサ層の特定の数に対して最大のチャネル数を選択することができる。例えば、4つのスペーサ層の堆積では最大16チャネルが生成されてもよいが、4つのスペーサ層に対して9チャネル、10チャネルなどの別のチャネル数が選択されてもよい。この場合、1つ以上のチャネルは、省略または複製されてもよい。例えば、特定の光センサが、特定の波長に関する情報を捕獲することについての性能不足に関連付けられる場合、特定の波長に関する情報は、情報の精度を向上させるために、複数のチャネルに関連する複数の光センサによって捕獲されるようにされてもよい。
t0=tmin;
t1=(c/2)/((c−1)*2*nref)*(λmax−λmin);
tn=tn−1/2;
n=log2(c);
と決定されてもよく、ここで、tnは、第n番目の層の厚さ(例えば、t0は、第1の層であり、t1は、第2の層である)を表し、cは、チャネルセットのチャネルのチャネル数を表す。いくつかの実施形態では、等距離でないチャネルセットが利用されてもよい。例えば、第1の波長セットと、第1の波長セットと不連続である第2の波長セットとに関する情報を得るために、チャネルの不連続なパターニングが選択されてもよい。この場合、tminおよびtmaxは、やはり決定されるが、異なる中間層のセットが選択されてもよい。いくつかの実施形態では、異なるチャネル数が利用されてもよい。さらに、または代わりに、チャネルのパターニングは、共通の厚さを有する複数のチャネルを用いて利用されてもよく、それにより複数の光センサが共通の波長の光に関する情報を捕獲することを可能にする。
Claims (15)
- 基板に配置されたマルチスペクトルフィルタアレイを含むデバイスであって、
該マルチスペクトルフィルタアレイは、
該基板の上に配置された第1の金属ミラーと、
該第1の金属ミラーの上に配置されたスペーサと、
該スペーサの上に配置された第2の金属ミラーと、
を含み、
前記スペーサは、複数のスペーサ層を含み、
前記複数のスペーサ層は、第1のスペーサ層と、第2のスペーサ層と、第3のスペーサ層とを含み、
前記第1のスペーサ層は、前記第1の金属ミラーの上に配置され、前記第3のスペーサ層は、前記第1のスペーサ層と前記第2のスペーサ層との間に配置され、前記第2の金属ミラーは、前記第2のスペーサ層の上に配置され、
該第2の金属ミラーは、センサ素子のセットの2つ以上のセンサ素子と整列しており、
前記スペーサは、アモルファスシリコンベースの材料、水素化アモルファスシリコン(Si:H)ベースの材料、ゲルマニウム(Ge)ベースの材料、酸化ニオブ(Nb2O5)ベースの材料、酸化タンタル(Ta2O5)ベースの材料、酸化イットリウム(Y2O3)ベースの材料、及び酸化ジルコニウム(ZrO2)ベースの材料のうちの少なくとも1つを含み、
前記第1の金属ミラーのエッジ部分、第2の金属ミラーのエッジ部分、前記第1のスペーサ層のエッジ部分、第2のスペーサ層のエッジ部分、および第3のスペーサ層のエッジ部分は、それぞれ、テーパ状に形成されている、
デバイス。 - 前記第1の金属ミラーは、前記センサ素子のセットの上に均一な厚さを有する請求項1に記載のデバイス。
- 前記第2の金属ミラーは、前記センサ素子のセットのすべてと整列している請求項1に記載のデバイス。
- 前記第1のスペーサ層は、前記センサ素子のセットと整列している光チャネルのセットの第1のチャネルに対応し、および第1の厚さに関連付けられ、
前記第2のスペーサ層は、該光チャネルのセットの第2のチャネルに対応し、および該第1の厚さと異なる第2の厚さに関連付けられ、
該第1のスペーサ層は、該センサ素子のセットのうち第1の数のセンサ素子を覆い、
該第2のスペーサ層は、該センサ素子のセットのうち第2の数のセンサ素子を覆い、
該第2の数は、該第1の数の半分である、請求項1に記載のデバイス。 - 前記第1の金属ミラーおよび前記第2の金属ミラーは、
銀(Ag)ベースのミラー、
アルミニウム(Al)ベースのミラー、または
銅(Cu)ベースのミラー
のうちの少なくとも1つを含む請求項1に記載のデバイス。 - 前記第1の金属ミラーおよび前記第2の金属ミラーは、銅(Cu)ベースのミラーである請求項5に記載のデバイス。
- 前記センサ素子のセットは、
フォトダイオードアレイ、
電荷結合デバイス(CCD)、または
相補型金属酸化膜半導体(CMOS)、
のうちの少なくとも1つを更に含む請求項1に記載のデバイス。 - 前記マルチスペクトルフィルタアレイは、
前記第1の金属ミラーを挟む第1の酸化亜鉛保護層と、
前記第2の金属ミラーを挟む第2の酸化亜鉛保護層と、
を更に含む請求項1に記載のデバイス。 - 前記センサ素子のセットに向けられた光をフィルタにかけるために前記マルチスペクトルフィルタアレイの上に配置された1つ以上のフィルタ層であって、
該1つ以上のフィルタ層は、
帯域外遮蔽層のセット、
反射防止コーティング層のセット、または
高次抑制層のセット、
のうちの少なくとも1つを含む、1つ以上のフィルタ層を更に含む請求項1に記載のデバイス。 - 前記マルチスペクトルフィルタアレイの上に配置されたレンズのセットを更に含み、
該レンズのセットの特定のレンズは、該マルチスペクトルフィルタアレイのチャネルを経由して、前記センサ素子のセットの特定の光センサへ光を向けることに関連付けられている請求項1に記載のデバイス。 - 前記センサ素子のセットは、前記基板に組み込まれている請求項1に記載のデバイス。
- 前記センサ素子のセットは、センサアレイの複数の光センサである請求項1に記載のデバイス。
- 前記センサ素子のセットは、光源からの光の一部を受け取ることに関連付けられている請求項1に記載のデバイス。
- 前記センサ素子のセットは、裏面照射型センサアレイである請求項1に記載のデバイス。
- 前記複数のスペーサ層は、光源から前記センサ素子のセットに向かう光の角度シフトを低減させるように選択された材料を含む請求項1に記載のデバイス。
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