JP2017018941A - 基材のコーティング方法 - Google Patents
基材のコーティング方法 Download PDFInfo
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- JP2017018941A JP2017018941A JP2016077941A JP2016077941A JP2017018941A JP 2017018941 A JP2017018941 A JP 2017018941A JP 2016077941 A JP2016077941 A JP 2016077941A JP 2016077941 A JP2016077941 A JP 2016077941A JP 2017018941 A JP2017018941 A JP 2017018941A
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- 238000000576 coating method Methods 0.000 title claims abstract description 35
- 239000000463 material Substances 0.000 title abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000011810 insulating material Substances 0.000 claims abstract description 40
- 239000011248 coating agent Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims description 85
- 239000002904 solvent Substances 0.000 claims description 31
- 230000003750 conditioning effect Effects 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 13
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101710121996 Hexon protein p72 Proteins 0.000 description 1
- 101710125418 Major capsid protein Proteins 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Formation Of Insulating Films (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
Claims (17)
- 基材(10)の表面調整工程と、
絶縁材料が平坦な表面を有し、ビア(16)が完全に絶縁材料で満たされるように、基材(10)を絶縁材料でコーディングするコーティング工程と
を実行する前記ビア(16)が備えられた基材(10)のコーティング方法。
- 前記表面調整工程は、大気圧下で実行されることを特徴とする請求項1に記載の基材のコーティング方法。
- 前記基材(10)は、前記表面調整工程においてプラズマ処理されることを特徴とする請求項1又は2に記載の基材のコーティング方法。
- 前記基材(10)は、前記表面調整工程において酸化処理されることを特徴とする請求項1又は2に記載の基材のコーティング方法。
- 前記基材(10)は、前記表面調整工程を実行するため溶剤(40)が塗布されることを特徴とする請求項1又は2に記載の基材のコーティング方法。
- 前記基材(10)は、前記プラズマ処理と前記溶剤の塗布との組み合わせにより表面調整されることを特徴とする請求項5に記載の基材のコーティング方法。
- 前記基材(10)は、前記酸化処理と前記溶剤の塗布との組み合わせにより表面調整されることを特徴とする請求項5に記載の基材コーティング方法。
- 前記溶剤(40)は、スピンコート法によって塗布されることを特徴とする請求項5から7の何れか1項に記載の基材コーティング方法。
- 前記溶剤(40)が塗布された基材(10)は、真空チャンバ(50)に搬送され、真空チャンバ(50)の内部の圧力が減圧され、保持時間が経過した後に、真空チャンバ(50)が再度通気されることを特徴とする請求項5から8の何れか1項に記載の基材のコーティング方法。
- 前記真空チャンバ(50)内の圧力は、大気圧よりも0.1〜0.9バール減圧されることを特徴とする請求項9に記載の基材のコーティング方法。
- 保持時間は、約10〜60秒であることを特徴とする請求項9又は10に記載の基材のコーティング方法。
- 前記基材(10)は、前記真空チャンバ(50)内で加熱されることを特徴とする請求項9から11の何れか1項に記載の基材のコーティング方法。
- 前記基材(10)は、30℃よりも高い温度に加熱されることを特徴とする請求項12に記載の基材のコーティング方法。
- 前記溶剤(40)が塗布された後、前記基材(10)は、前記絶縁材料(20)がコーティングされる別のチャンバに搬送されることを特徴とする請求項5から13の何れか1項に記載の基材のコーティング方法。
- 前記絶縁材料(20)は、スピンコート法により塗布されることを特徴とする請求項1から14の何れか1項に記載の基材のコーティング方法。
- 前記絶縁材料(20)として、誘電体、レジスト、又はエポキシ樹脂が塗布されることを特徴とする請求項1から15の何れか1項に記載の基材のコーティング方法。
- 前記絶縁材料(20)は、塗布された後、硬化されることを特徴とする請求項1から16の何れか1項に記載の基材のコーティング方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL2014598 | 2015-04-08 | ||
NL2014598A NL2014598B1 (en) | 2015-04-08 | 2015-04-08 | Method for coating a substrate. |
Publications (2)
Publication Number | Publication Date |
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JP2017018941A true JP2017018941A (ja) | 2017-01-26 |
JP6700925B2 JP6700925B2 (ja) | 2020-05-27 |
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Application Number | Title | Priority Date | Filing Date |
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JP2016077941A Active JP6700925B2 (ja) | 2015-04-08 | 2016-04-08 | 基材のコーティング方法 |
Country Status (9)
Country | Link |
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US (1) | US9799554B2 (ja) |
JP (1) | JP6700925B2 (ja) |
KR (1) | KR102530371B1 (ja) |
CN (1) | CN106057639B (ja) |
AT (1) | AT516988B1 (ja) |
CH (1) | CH710963A8 (ja) |
DE (1) | DE102016106400A1 (ja) |
NL (1) | NL2014598B1 (ja) |
TW (1) | TWI701085B (ja) |
Families Citing this family (1)
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NL2019096B1 (en) | 2017-06-20 | 2018-12-27 | Suss Microtec Lithography Gmbh | Nozzle tip adapter, nozzle assembly as well as nozzle |
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- 2016-04-07 CH CH00450/16A patent/CH710963A8/de not_active Application Discontinuation
- 2016-04-07 KR KR1020160042827A patent/KR102530371B1/ko active IP Right Grant
- 2016-04-07 DE DE102016106400.9A patent/DE102016106400A1/de active Pending
- 2016-04-08 CN CN201610217798.4A patent/CN106057639B/zh active Active
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- 2016-04-08 JP JP2016077941A patent/JP6700925B2/ja active Active
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NL2014598A (en) | 2016-10-12 |
AT516988A3 (de) | 2018-04-15 |
CH710963A2 (de) | 2016-10-14 |
AT516988B1 (de) | 2022-10-15 |
JP6700925B2 (ja) | 2020-05-27 |
CH710963A8 (de) | 2016-12-30 |
US20160300759A1 (en) | 2016-10-13 |
TWI701085B (zh) | 2020-08-11 |
DE102016106400A1 (de) | 2016-10-13 |
US9799554B2 (en) | 2017-10-24 |
CN106057639B (zh) | 2021-09-21 |
KR102530371B1 (ko) | 2023-05-09 |
TW201707802A (zh) | 2017-03-01 |
CN106057639A (zh) | 2016-10-26 |
KR20160120678A (ko) | 2016-10-18 |
NL2014598B1 (en) | 2017-01-20 |
AT516988A2 (de) | 2016-10-15 |
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