CN104157612A - Tft阵列基板的制作方法及tft阵列基板结构 - Google Patents

Tft阵列基板的制作方法及tft阵列基板结构 Download PDF

Info

Publication number
CN104157612A
CN104157612A CN201410415951.5A CN201410415951A CN104157612A CN 104157612 A CN104157612 A CN 104157612A CN 201410415951 A CN201410415951 A CN 201410415951A CN 104157612 A CN104157612 A CN 104157612A
Authority
CN
China
Prior art keywords
layer
pixel electrode
organic material
electrode layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410415951.5A
Other languages
English (en)
Inventor
孙博
徐洪远
萧祥志
苏长义
曾勉
王笑笑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201410415951.5A priority Critical patent/CN104157612A/zh
Priority to PCT/CN2014/086264 priority patent/WO2016026183A1/zh
Priority to US14/430,205 priority patent/US9726955B2/en
Publication of CN104157612A publication Critical patent/CN104157612A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133519—Overcoatings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本发明提供一种TFT阵列基板的制作方法及TFT阵列基板结构，所述TFT阵列基板结构包括基板(1)、位于基板(1)上的第一金属电极(2)、位于基板(1)上且完全覆盖所述第一金属电极(2)的栅极绝缘层(3)、位于栅极绝缘层(3)上的岛状半导体层(4)、位于栅极绝缘层(3)与岛状半导体层(4)上的第二金属电极(6)、位于第二金属电极(6)上的保护层(8)、位于保护层(8)上的色阻层(7)、位于色阻层(7)上的保护层(12)、及位于保护层(12)上的第一像素电极层(9)；所述保护层(8)、色阻层(7)与保护层(12)上具有一过孔(81)，所述过孔(81)内部填充有机材料层(10)。

Description

TFT阵列基板的制作方法及TFT阵列基板结构
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT阵列基板的制作方法及TFT阵列基板结构。
背景技术
平面显示装置具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的平面显示装置主要包括液晶显示装置(Liquid Crystal Display，LCD)及有机电致发光显示装置(Organic Light Emitting Display，OLED)。在平板显示装置中，薄膜晶体管液晶显示器(Thin Film Transistor LiquidCrystal Dsiplay，简称TFT-LCD)具有体积小、功耗低、制造成本相对较低和无辐射等特点，在当前的平板显示器市场中占据了主导地位。
目前的液晶显示器屏幕主要原理为背光源发出白光，通过阵列基板偏光片后，由于液晶旋转角度的不同，造成光偏振态的改变，通过CF上的偏光片后，造成不同像素亮度的不同。而全彩显示器则是在CF基板上面加了一层彩色滤光片，使得不同像素RGB三基色的混光强度不同，以实现彩色显示。
为了增大开口率以及降低像素寄生电容等的影响，目前COA(ColorFilter on Array)技术被广泛采用。COA技术是将彩色滤光片与阵列基板集成在一起的其中一种集成技术。即将彩色光阻涂布于已完成的阵列上形成彩色滤光层，可以改善传统彩色滤光片开口率低的问题。
传统的液晶显示器的结构为两片玻璃基板中间夹有液晶层，在其中一片玻璃基板上制备薄膜晶体管(TFT)，用于驱动液晶的旋转，控制每个像素的显示；另一块基板上制备彩色滤光层，用于形成每个像素的色彩。彩色滤光片集成技术是将TFT和彩色滤光层制备在同一片玻璃基板上，采用这种技术具有以下优点：
(1)上下基板自对准。在传统结构下，当前后两片玻璃基板上分别加工完成TFT和彩色滤光层后，需要将两片玻璃上相应的像素位置对准后再封盒，即存在一个对准工艺，改工艺的准确性将直接影响显示器的质量。采用COA技术后，因两者都在一片玻璃上，可以自对准，省却了对准工艺，简化了加工过程，提高了产品质量。
(2)降低成本。彩色滤光片在液晶显示器的成本中占有很大的比重，将彩色滤光片制备在TFT上可以减少彩色滤光片的制造工艺，有效降低成本；另外，彩色滤光片对性能的影响很大，而彩色滤光片和液晶显示屏往往由不同厂商生产，在配合上需要消耗人力物力，质量难以保证。而COA集成技术可以解决上述问题，降低成本。
(3)提高产品性能，增大开口率，提高透过率。采用彩色滤光片技术可将黑色矩阵的线宽从27μm降低到10μm左右，可将开口率提高15％，相应的透过率也大大提高。
但是，由于彩色滤光片较厚，通常会有几个微米的厚度，这就使得联通信号线与像素电极的过孔需要做很大才能保证有效接触。由于较大的过孔，会造成气泡、开口率降低、液晶导向错乱以及配向异常等问题。
发明内容
本发明的目的在于提供一种TFT阵列基板的制作方法，该制作方法简单，该方法制得的TFT阵列基板用于液晶显示器时，可避免出现气泡等问题，提高像素开口率，防止液晶导向错乱并增大固化制程中电场的均匀性。
本发明的另一目的在于提供一种TFT阵列基板结构，其结构简单，制程简便，且使用其的液晶显示器不易产生气泡，像素开口率较高，不会出现液晶导向错乱的现象。
为实现上述目的，本发明提供一种TFT阵列基板的制作方法，包括如下步骤：
步骤1、提供一基板，在该基板上沉积第一金属层并图案化，形成第一金属电极；
步骤2、在所述第一金属电极与基板上依次形成栅极绝缘层、及岛状半导体层；
步骤3、在栅极绝缘层与岛状半导体层上沉积第二金属层并图案化，形成第二金属电极；
步骤4、在所述第二金属电极上沉积保护层并图案化，形成保护层；
步骤5、在所述保护层上涂布色阻层，在所述色阻层上沉积保护层并图案化，形成保护层，并在保护层、色阻层与保护层上形成过孔；
步骤6、在所述保护层和第二金属电极上形成像素电极层与有机材料层。
所述步骤6具体为：
步骤61、在所述保护层和第二金属电极上沉积第一像素电极层并图案化，形成第一像素电极层，所述第一像素电极层通过过孔与第二金属电极连接；
步骤62、在所述第一像素电极层上涂覆有机材料层，所述有机材料层填充过孔；
步骤63、对所述有机材料层显影处理，去除过孔外部的有机材料层。
所述步骤6具体为：
步骤611、在所述保护层和第二金属电极上沉积第一像素电极层；
步骤612、在所述第一像素电极层上涂覆有机材料层，所述有机材料层填充过孔；
步骤613、对所述有机材料层显影处理，去除过孔周围的有机材料层；
步骤614、在所述第一像素电极层和有机材料层上沉积第二像素电极层；
步骤615、采用一道光刻制程同时对第一像素电极层和第二像素电极层进行图案化处理，形成第一像素电极层和第二像素电极层，所述第一像素电极层和第二像素电极层通过过孔与第二金属电极连接。
所述步骤1-4中，采用物理气相沉积法或化学气相沉积法沉积第一金属电极、栅极绝缘层、岛状半导体层、蚀刻阻挡层、第二金属电极、及保护层。
所述步骤1中，所述基板为玻璃基板；所述步骤2中，所述岛状半导体层为非晶硅，所述栅极绝缘层、及岛状半导体层经成膜、曝光、显影、及刻蚀工艺依次形成。。
步骤5所述色阻层为RGB色阻层，所述过孔顶部的直径为20μm，所述有机材料层为光阻类材料。
所述步骤61中，采用物理气相沉积法沉积所述第一像素电极层，所述第一像素电极层材料为ITO或IZO。
采用物理气相沉积法沉积所述第一像素电极层和第二像素电极层，第一像素电极层和所述第二像素电极层材料为ITO或IZO。
本发明还提供一种TFT阵列基板结构，包括基板、位于基板上的第一金属电极、位于基板上且完全覆盖所述第一金属电极的栅极绝缘层、位于栅极绝缘层上的岛状半导体层、位于栅极绝缘层与岛状半导体层上的第二金属电极、位于第二金属电极上的保护层、位于保护层上的色阻层、位于色阻层上的保护层、及位于保护层上的第一像素电极层；所述保护层、色阻层与保护层上具有一过孔，所述过孔内部填充有机材料层；所述基板为玻璃基板，所述岛状半导体层为非晶硅，所述色阻层为RGB色阻层，所述第一像素电极层材料为ITO或IZO，所述有机材料层为光阻类材料。
还包括位于第一像素电极层与有机材料层上的第二像素电极层，所述第二像素电极层材料为ITO或IZO。
本发明的有益效果：本发明提供的TFT阵列基板的制作方法及TFT阵列基板结构，通过在过孔内部填满有机材料，以及设置两层像素电极层，减小了地形断差，使得采用该结构的像素将基本上完全平坦，且像素电极有效控制面积增大，提高了像素开口率；由于较大的过孔被填平，减小了地形断差，使得气泡风险降低；由于过孔处液晶也可有效控制，且电场无地形差异，使得固化电场均匀性提高，防止液晶导向错乱。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为本发明TFT阵列基板的制作方法的示意流程图；
图2为本发明TFT阵列基板的制作方法第一实施例步骤7的示意图；
图3为本发明TFT阵列基板的制作方法第一实施例步骤8的示意图；
图4为本发明TFT阵列基板的制作方法第二实施例步骤7的示意图；
图5为本发明TFT阵列基板的制作方法第二实施例步骤8的示意图；
图6为本发明TFT阵列基板的制作方法第二实施例步骤9的示意图；
图7为本发明TFT阵列基板的制作方法第二实施例步骤10的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
图1为本发明TFT阵列基板的制作方法的示意流程图；本说明书采用两个具体实施例对本发明TFT阵列基板的制作方法进行描述。
请参阅图1-图3，本发明TFT阵列基板的制作方法的第一实施例包括如下步骤：
步骤1、提供一基板1，在该基板1上沉积第一金属层并图案化，形成第一金属电极2。
优选的，所述基板1为玻璃基板。
步骤2、在所述第一金属电极2与基板1上经成膜、曝光、显影、刻蚀等工艺依次形成栅极绝缘层3、及岛状半导体层4。
优选的，所述岛状半导体层4为非晶硅。所述栅极绝缘层3完全覆盖第一金属电极2。
步骤3、在所述栅极绝缘层3与岛状半导体层4上沉积第二金属层并图案化，形成第二金属电极6。
步骤4、在所述第二金属电极6上沉积保护层并图案化，形成保护层8。
值得一提的是，所述步骤1-4中，均采用物理气相沉积法或化学气相沉积法沉积第一金属电极2、栅极绝缘层3、岛状半导体层4、第二金属电极6、及保护层8。
步骤5、在所述保护层8上涂布色阻层7，在所述色阻层7上沉积保护层并图案化，形成保护层12，并在保护层8，色阻层7和保护层12上形成过孔81。
具体的，所述色阻层7为RGB色阻层。优选的，所述过孔81顶部的直径为20μm左右。
步骤6、在所述保护层12和第二金属电极6上沉积第一像素电极层并图案化，形成第一像素电极层9，所述第一像素电极层9通过过孔81与第二金属电极6连接。
具体的，采用物理气相沉积法沉积所述第一像素电极层9。优选的，所述第一像素电极层9材料为ITO(氧化铟锡)或IZO(铟锌氧化物)。
步骤7、在所述第一像素电极层9上涂覆有机材料层10，所述有机材料层10填充过孔81。
此时，不仅过孔81内部，整个阵列基板最上层也都涂布满了平坦的有机材料层10。优选的，所述有机材料层10为光阻类材料。
步骤8、对所述有机材料层10显影处理，去除过孔81周围的有机材料层10。
值得一提的是，通过控制显影速度，使得显影结束时，只有过孔81内部存在有机材料层10，过孔81周围的其它地方无有机材料层10残留。
该第一实施例中通过涂布有机材料层10，使过孔81内部填满有机材料，减小了地形断差，防止了液晶导向错乱。更重要的是，减小了过孔81内液晶藏匿气体的可能，减少了出现气泡问题的风险。
请参阅图1与图4-7，本发明TFT阵列基板的制作方法的第二实施例包括如下步骤：
步骤1、提供一基板1，在该基板1上沉积第一金属层并图案化，形成第一金属电极2。
优选的，所述基板1为玻璃基板。
步骤2、在所述第一金属电极2与基板1上经成膜、曝光、显影、刻蚀等工艺依次形成栅极绝缘层3、及岛状半导体层4。
优选的，所述岛状半导体层4为非晶硅。所述栅极绝缘层3完全覆盖第一金属电极2。
步骤3、在所述栅极绝缘层3与岛状半导体层4上沉积第二金属层并图案化，形成第二金属电极6。
步骤4、在所述第二金属电极6上沉积保护层并图案化，形成保护层8。
值得一提的是，所述步骤1-4中，均采用物理气相沉积法或化学气相沉积法沉积第一金属电极2、栅极绝缘层3、岛状半导体层4、蚀刻阻挡层5、第二金属电极6、及保护层8。
步骤5、在所述保护层8上涂布色阻层7，在所述色阻层7上沉积保护层并图案化，形成保护层12，并在保护层8，色阻层7和保护层12上形成过孔81。
具体的，所述色阻层7为RGB色阻层。优选的，所述过孔81顶部的直径为20μm左右。
步骤6、在所述保护层12和第二金属电极6上沉积第一像素电极层。
具体的，采用物理气相沉积法沉积所述第一像素电极层。优选的，所述第一像素电极层材料为ITO或IZO。
步骤7、在所述第一像素电极层上涂覆有机材料层10，所述有机材料层10填充过孔81。
此时，不仅过孔81内部，整个阵列基板最上层也都涂布满了平坦的有机材料层10。优选的，所述有机材料层10为光阻类材料。
步骤8、对所述有机材料层10显影处理，去除过孔81周围的有机材料层10。
值得一提的是，通过控制显影速度，使得显影结束时，只有过孔81内部存在有机材料层10，过孔81周围的其它地方无有机材料层10残留。
步骤9、在所述第一像素电极层和有机材料层10上沉积第二像素电极层。
具体的，采用物理气相沉积法沉积所述第二像素电极层。优选的，所述第二像素电极层材料为ITO或IZO。
步骤10、采用一道光刻制程同时对第一像素电极层和第二像素电极层进行图案化处理，形成第一像素电极层9和第二像素电极层11，所述第一像素电极层9和第二像素电极层11通过过孔81与第二金属电极6连接。
与第一实施例相比，该第二实施例的不同之处在于，步骤6中在所述保护层12上沉积第一像素电极层后，先不对其进行图案化处理，而是直接进行步骤7-8的操作，最后在步骤8得到的基板上进行步骤9的操作，即沉积第二像素电极层，最后进行步骤10的操作，将第二像素电极层与第一像素电极层统一进行图案化处理。
该第二实施例中，在沉积第一像素电极层后，将COA制程所形成的巨大的过孔81通过有机材料层10的涂覆制程进行填充，然后进行平坦化处理。之后，再次进行沉积第二像素电极层的制程，最后对两层像素电极层进行统一的图案化制程。这样不仅可以使过孔处的地形断差有效消除，减少产生液晶气泡的风险，并且由于像素电极层在整个像素区几乎无地形断差，使得VA(Vertical Alignment liquid crystal，垂直排列液晶)模式制程中的固化制程的电场均匀性得到提升，不会出现液晶错乱的现象。同时，由于过孔81处的液晶也能有效控制，对于像素的开口率也会有一定程度的改善。
请参考图3，本发明提供一种TFT阵列基板结构，包括基板1、位于基板1上的第一金属电极2、位于基板1上且完全覆盖所述第一金属电极2的栅极绝缘层3、位于栅极绝缘层3上的岛状半导体层4、位于栅极绝缘层3与岛状半导体层4上的第二金属电极6、位于第二金属电极6上的保护层8、位于保护层8上的色阻层7、位于色阻层7上的保护层12、位于保护层12上的第一像素电极层9；所述保护层8、色阻层7及保护层12上具有一过孔81，所述过孔81内部填充有机材料层10；所述基板1为玻璃基板，所述岛状半导体层4为非晶硅，所述色阻层7为RGB色阻层，所述第一像素电极层9材料为ITO或IZO，所述有机材料层10为光阻类材料。
请参考图7，本发明还提供一种TFT阵列基板结构，与上一实施例相比，其不同之处在于，还包括位于第一像素电极层9与有机材料层10上的第二像素电极层11。优选的，所述第二像素电极层11材料为ITO或IZO。
综上所述，本发明提供的TFT阵列基板的制作方法及TFT阵列基板结构，通过在过孔内部填满有机材料，以及设置两层像素电极层，减小了地形断差，使得采用该结构的像素将基本上完全平坦，且像素电极有效控制面积增大，提高了像素开口率；由于较大的过孔被填平，减小了地形断差，使得气泡风险降低；由于过孔处液晶也可有效控制，且电场无地形差异，使得固化电场均匀性提高，防止液晶导向错乱。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

1.一种TFT阵列基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供一基板(1)，在该基板(1)上沉积第一金属层并图案化，形成第一金属电极(2)；
步骤2、在所述第一金属电极(2)与基板(1)上形成栅极绝缘层(3)、及岛状半导体层(4)；
步骤3、在栅极绝缘层(3)与岛状半导体层(4)上沉积第二金属层并图案化，形成第二金属电极(6)；
步骤4、在所述第二金属电极(6)上沉积保护层并图案化，形成保护层(8)；
步骤5、在所述保护层(8)上涂布色阻层(7)，在所述色阻层(7)上沉积保护层并图案化，形成保护层(12)，并在保护层(8)、色阻层(7)与保护层(12)上形成过孔(81)；
步骤6、在所述保护层(12)和第二金属电极(6)上形成像素电极层与有机材料层(10)。
2.如权利要求1所述的TFT阵列基板的制作方法，其特征在于，所述步骤6具体为：
步骤61、在所述保护层(12)和第二金属电极(6)上沉积第一像素电极层并图案化，形成第一像素电极层(9)，所述第一像素电极层(9)通过过孔(81)与第二金属电极(6)连接；
步骤62、在所述第一像素电极层(9)上涂覆有机材料层(10)，所述有机材料层(10)填充过孔(81)；
步骤63、对所述有机材料层(10)显影处理，去除过孔(81)外部的有机材料层(10)。
3.如权利要求1所述的TFT阵列基板的制作方法，其特征在于，所述步骤6具体为：
步骤611、在所述保护层(12)和第二金属电极(6)上沉积第一像素电极层；
步骤612、在所述第一像素电极层上涂覆有机材料层(10)，所述有机材料层(10)填充过孔(81)；
步骤613、对所述有机材料层(10)显影处理，去除过孔(81)周围的有机材料层(10)；
步骤614、在所述第一像素电极层和有机材料层(10)上沉积第二像素电极层；
步骤615、采用一道光刻制程同时对第一像素电极层和第二像素电极层进行图案化处理，形成第一像素电极层(9)和第二像素电极层(11)，所述第一像素电极层(9)和第二像素电极层(11)通过过孔(81)与第二金属电极(6)连接。
4.如权利要求1所述的TFT阵列基板的制作方法，其特征在于，所述步骤1-4中，采用物理气相沉积法或化学气相沉积法沉积第一金属电极(2)、栅极绝缘层(3)、岛状半导体层(4)、蚀刻阻挡层(5)、第二金属电极(6)、及保护层(8)。
5.如权利要求1所述的TFT阵列基板的制作方法，其特征在于，所述步骤1中，所述基板(1)为玻璃基板；所述步骤2中，所述岛状半导体层(4)为非晶硅，所述栅极绝缘层(3)、及岛状半导体层(4)经成膜、曝光、显影、及刻蚀工艺依次形成。
6.如权利要求1所述的TFT阵列基板的制作方法，其特征在于，步骤5所述色阻层(7)为RGB色阻层，所述过孔(81)顶部的直径为20μm，所述有机材料层(10)为光阻类材料。
7.如权利要求2所述的TFT阵列基板的制作方法，其特征在于，所述步骤61中，采用物理气相沉积法沉积所述第一像素电极层(9)，所述第一像素电极层(9)材料为ITO或IZO。
8.如权利要求3所述的TFT阵列基板的制作方法，其特征在于，采用物理气相沉积法沉积所述第一像素电极层(9)和第二像素电极层(11)，第一像素电极层(9)和所述第二像素电极层(11)材料为ITO或IZO。
9.一种TFT阵列基板结构，其特征在于，包括基板(1)、位于基板(1)上的第一金属电极(2)、位于基板(1)上且完全覆盖所述第一金属电极(2)的栅极绝缘层(3)、位于栅极绝缘层(3)上的岛状半导体层(4)、位于栅极绝缘层(3)与岛状半导体层(4)上的第二金属电极(6)、位于第二金属电极(6)上的保护层(8)、位于保护层(8)上的色阻层(7)、位于色阻层(7)上的保护层(12)、及位于保护层(12)上的第一像素电极层(9)；所述保护层(8)、色阻层(7)与保护层(12)上具有一过孔(81)，所述过孔(81)内部填充有机材料层(10)；所述基板(1)为玻璃基板，所述岛状半导体层(4)为非晶硅，所述色阻层(7)为RGB色阻层，所述第一像素电极层(9)材料为ITO或IZO，所述有机材料层(10)为光阻类材料。
10.如权利要求9所述的TFT阵列基板结构，其特征在于，还包括位于第一像素电极层(9)与有机材料层(10)上的第二像素电极层(11)，所述第二像素电极层(11)材料为ITO或IZO。
CN201410415951.5A 2014-08-21 2014-08-21 Tft阵列基板的制作方法及tft阵列基板结构 Pending CN104157612A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201410415951.5A CN104157612A (zh) 2014-08-21 2014-08-21 Tft阵列基板的制作方法及tft阵列基板结构
PCT/CN2014/086264 WO2016026183A1 (zh) 2014-08-21 2014-09-11 Tft阵列基板的制作方法及tft阵列基板结构
US14/430,205 US9726955B2 (en) 2014-08-21 2014-09-11 Manufacture method of TFT array substrate and TFT array substrate sturcture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410415951.5A CN104157612A (zh) 2014-08-21 2014-08-21 Tft阵列基板的制作方法及tft阵列基板结构

Publications (1)

Publication Number Publication Date
CN104157612A true CN104157612A (zh) 2014-11-19

Family

ID=51883085

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410415951.5A Pending CN104157612A (zh) 2014-08-21 2014-08-21 Tft阵列基板的制作方法及tft阵列基板结构

Country Status (3)

Country Link
US (1) US9726955B2 (zh)
CN (1) CN104157612A (zh)
WO (1) WO2016026183A1 (zh)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104503150A (zh) * 2014-12-04 2015-04-08 深圳市华星光电技术有限公司 液晶面板及其制作方法
CN105514125A (zh) * 2016-02-02 2016-04-20 京东方科技集团股份有限公司 一种阵列基板、其制备方法及显示面板
CN105607365A (zh) * 2015-12-31 2016-05-25 深圳市华星光电技术有限公司 一种coa基板及其制作方法
CN105629617A (zh) * 2016-04-01 2016-06-01 京东方科技集团股份有限公司 一种显示基板及显示装置
CN105842929A (zh) * 2015-01-12 2016-08-10 群创光电股份有限公司 显示装置
CN106057639A (zh) * 2015-04-08 2016-10-26 苏斯微技术光刻有限公司 用于涂覆基板的方法
CN106125391A (zh) * 2016-08-27 2016-11-16 深圳市华星光电技术有限公司 显示面板及显示装置
WO2017177521A1 (zh) * 2016-04-12 2017-10-19 深圳市华星光电技术有限公司 阵列基板及液晶显示面板
CN107300810A (zh) * 2017-07-25 2017-10-27 深圳市华星光电技术有限公司 一种阵列基板的制程及显示面板的制程
CN108333845A (zh) * 2018-02-26 2018-07-27 武汉华星光电技术有限公司 阵列基板、显示面板以及阵列基板的制作方法
CN108363249A (zh) * 2018-03-14 2018-08-03 京东方科技集团股份有限公司 一种显示面板、其驱动方法及显示装置
CN109085949A (zh) * 2018-07-27 2018-12-25 上海天马微电子有限公司 一种阵列基板及显示装置
CN109216583A (zh) * 2018-08-30 2019-01-15 武汉华星光电技术有限公司 显示面板及其制作方法、电子装置
CN109712994A (zh) * 2019-01-22 2019-05-03 深圳市华星光电半导体显示技术有限公司 阵列基板及其制作方法
WO2019174261A1 (zh) * 2018-03-16 2019-09-19 深圳市华星光电半导体显示技术有限公司 阵列基板
CN110596978A (zh) * 2019-09-06 2019-12-20 深圳市华星光电技术有限公司 阵列基板及其制造方法、显示面板
CN110941123A (zh) * 2019-11-07 2020-03-31 深圳市华星光电半导体显示技术有限公司 Coa型阵列基板及其制造方法
CN111610659A (zh) * 2020-05-19 2020-09-01 深圳市华星光电半导体显示技术有限公司 阵列基板及其制备方法
CN114690466A (zh) * 2022-03-30 2022-07-01 长沙惠科光电有限公司 显示基板的制备方法、显示基板和显示面板
US20220276540A1 (en) * 2021-02-26 2022-09-01 Boe Technology Group Co., Ltd. Array substrate, manufacturing method thereof and display panel

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10509287B2 (en) * 2016-01-27 2019-12-17 Shenzhen China Star Optoelectronics Technology Co., Ltd Color filter on array substrate having a photoresist plug contacting a liquid crystal layer
CN106646969A (zh) * 2016-11-22 2017-05-10 深圳市华星光电技术有限公司 Coa型液晶面板的制作方法及coa型液晶面板
CN110021653B (zh) * 2019-04-23 2021-02-12 合肥鑫晟光电科技有限公司 阵列基板及其制造方法、显示面板和显示装置
US20220285408A1 (en) * 2019-11-26 2022-09-08 Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. Isolation structure of a photoresist stripper, tft arrays and preparation method thereof
CN118248695A (zh) * 2022-12-23 2024-06-25 群创光电股份有限公司 电子装置以及其制造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002350833A (ja) * 2001-05-30 2002-12-04 Matsushita Electric Ind Co Ltd 液晶表示装置およびその製造方法
KR20050000684A (ko) * 2003-06-24 2005-01-06 엘지.필립스 엘시디 주식회사 액정표시장치와 그 제조방법
CN1610461A (zh) * 2003-10-16 2005-04-27 三星Sdi株式会社 有机发光显示装置及其制造方法
US20090190054A1 (en) * 2008-01-28 2009-07-30 Kim Yong-Jo Display Substrate, Method Of Manufacturing The Same And Liquid Crystal Display Panel Having The Display Substrate
JP2009276712A (ja) * 2008-05-19 2009-11-26 Seiko Epson Corp 電気光学装置、電気光学装置の製造方法、および投射型表示装置
CN102043300A (zh) * 2009-10-21 2011-05-04 乐金显示有限公司 使用塑料基板制造显示装置的方法
CN102508376A (zh) * 2011-12-15 2012-06-20 深圳市华星光电技术有限公司 液晶显示面板以及其制造方式
CN103700669A (zh) * 2013-12-19 2014-04-02 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7102168B2 (en) * 2001-12-24 2006-09-05 Samsung Electronics Co., Ltd. Thin film transistor array panel for display and manufacturing method thereof
TWI316763B (en) * 2006-12-01 2009-11-01 Au Optronics Corp Lcd pixel array structure and fabrication method thereof
KR20080077538A (ko) * 2007-02-20 2008-08-25 삼성전자주식회사 박막트랜지스터 기판과 액정표시장치
JP5600255B2 (ja) * 2010-01-12 2014-10-01 株式会社ジャパンディスプレイ 表示装置、スイッチング回路および電界効果トランジスタ
CN103022149B (zh) * 2012-12-14 2015-06-10 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及制造方法和显示器件

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002350833A (ja) * 2001-05-30 2002-12-04 Matsushita Electric Ind Co Ltd 液晶表示装置およびその製造方法
KR20050000684A (ko) * 2003-06-24 2005-01-06 엘지.필립스 엘시디 주식회사 액정표시장치와 그 제조방법
CN1610461A (zh) * 2003-10-16 2005-04-27 三星Sdi株式会社 有机发光显示装置及其制造方法
US20090190054A1 (en) * 2008-01-28 2009-07-30 Kim Yong-Jo Display Substrate, Method Of Manufacturing The Same And Liquid Crystal Display Panel Having The Display Substrate
JP2009276712A (ja) * 2008-05-19 2009-11-26 Seiko Epson Corp 電気光学装置、電気光学装置の製造方法、および投射型表示装置
CN102043300A (zh) * 2009-10-21 2011-05-04 乐金显示有限公司 使用塑料基板制造显示装置的方法
CN102508376A (zh) * 2011-12-15 2012-06-20 深圳市华星光电技术有限公司 液晶显示面板以及其制造方式
CN103700669A (zh) * 2013-12-19 2014-04-02 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104503150A (zh) * 2014-12-04 2015-04-08 深圳市华星光电技术有限公司 液晶面板及其制作方法
US9638962B2 (en) 2014-12-04 2017-05-02 Shenzhen China Star Optoelectronics Technology Co., Ltd Liquid crystal panel and manufacture method thereof
WO2016086539A1 (zh) * 2014-12-04 2016-06-09 深圳市华星光电技术有限公司 液晶面板及其制作方法
CN105842929B (zh) * 2015-01-12 2020-12-29 群创光电股份有限公司 显示装置
CN105842929A (zh) * 2015-01-12 2016-08-10 群创光电股份有限公司 显示装置
CN106057639A (zh) * 2015-04-08 2016-10-26 苏斯微技术光刻有限公司 用于涂覆基板的方法
US10007157B2 (en) 2015-12-31 2018-06-26 Shenzhen China Star Optoelectronics Technology Co., Ltd Color-filter-on-array substrate and method of manufacturing thereof
WO2017113467A1 (zh) * 2015-12-31 2017-07-06 深圳市华星光电技术有限公司 一种coa基板及其制作方法
CN105607365A (zh) * 2015-12-31 2016-05-25 深圳市华星光电技术有限公司 一种coa基板及其制作方法
CN105514125A (zh) * 2016-02-02 2016-04-20 京东方科技集团股份有限公司 一种阵列基板、其制备方法及显示面板
CN105629617A (zh) * 2016-04-01 2016-06-01 京东方科技集团股份有限公司 一种显示基板及显示装置
WO2017177521A1 (zh) * 2016-04-12 2017-10-19 深圳市华星光电技术有限公司 阵列基板及液晶显示面板
CN106125391A (zh) * 2016-08-27 2016-11-16 深圳市华星光电技术有限公司 显示面板及显示装置
CN107300810A (zh) * 2017-07-25 2017-10-27 深圳市华星光电技术有限公司 一种阵列基板的制程及显示面板的制程
CN108333845A (zh) * 2018-02-26 2018-07-27 武汉华星光电技术有限公司 阵列基板、显示面板以及阵列基板的制作方法
CN108363249A (zh) * 2018-03-14 2018-08-03 京东方科技集团股份有限公司 一种显示面板、其驱动方法及显示装置
WO2019174261A1 (zh) * 2018-03-16 2019-09-19 深圳市华星光电半导体显示技术有限公司 阵列基板
CN109085949A (zh) * 2018-07-27 2018-12-25 上海天马微电子有限公司 一种阵列基板及显示装置
CN109216583A (zh) * 2018-08-30 2019-01-15 武汉华星光电技术有限公司 显示面板及其制作方法、电子装置
CN109712994A (zh) * 2019-01-22 2019-05-03 深圳市华星光电半导体显示技术有限公司 阵列基板及其制作方法
CN109712994B (zh) * 2019-01-22 2020-08-11 深圳市华星光电半导体显示技术有限公司 阵列基板及其制作方法
CN110596978A (zh) * 2019-09-06 2019-12-20 深圳市华星光电技术有限公司 阵列基板及其制造方法、显示面板
CN110941123A (zh) * 2019-11-07 2020-03-31 深圳市华星光电半导体显示技术有限公司 Coa型阵列基板及其制造方法
CN111610659A (zh) * 2020-05-19 2020-09-01 深圳市华星光电半导体显示技术有限公司 阵列基板及其制备方法
US20220276540A1 (en) * 2021-02-26 2022-09-01 Boe Technology Group Co., Ltd. Array substrate, manufacturing method thereof and display panel
CN114690466A (zh) * 2022-03-30 2022-07-01 长沙惠科光电有限公司 显示基板的制备方法、显示基板和显示面板
CN114690466B (zh) * 2022-03-30 2023-08-25 长沙惠科光电有限公司 显示基板的制备方法、显示基板和显示面板

Also Published As

Publication number Publication date
US9726955B2 (en) 2017-08-08
WO2016026183A1 (zh) 2016-02-25
US20160259191A1 (en) 2016-09-08

Similar Documents

Publication Publication Date Title
CN104157612A (zh) Tft阵列基板的制作方法及tft阵列基板结构
CN104965333B (zh) Coa型液晶显示面板及其制作方法
CN101435961B (zh) Tft-lcd彩膜/阵列基板、液晶显示面板及其制造方法
CN104360557B (zh) 阵列基板及其制造方法，以及显示装置
US11309358B2 (en) Display substrate and manufacturing method thereof
CN104062794B (zh) 掩膜板以及紫外线掩膜板、阵列基板的制造方法
KR102244758B1 (ko) 표시 패널 및 이의 제조 방법
CN104298040A (zh) 一种coa基板及其制作方法和显示装置
CN103700692A (zh) Oled显示面板及其制作方法
CN102799014B (zh) 液晶显示面板的制作方法
US20150285968A1 (en) Color filter substrate, preparing method thereof, and display device
CN104317097A (zh) 一种coa基板及其制作方法和显示装置
US20190086592A1 (en) Coa substrate, display panel and display device
US20160011457A1 (en) Fabrication method of substrate
US20170176813A1 (en) A display panel and a manufacturing method thereof, a display device
CN104461157B (zh) 触摸面板的制作方法、触摸面板、触摸屏和显示装置
CN104733456A (zh) 一种阵列基板及其制备方法、显示装置
CN103676390B (zh) 一种阵列基板及其制作方法、显示装置
US10403761B2 (en) Array substrate and manufacturing method thereof, and display device
CN103531609B (zh) 有源矩阵有机发光二极管显示器件、显示面板及显示装置
US20150362771A1 (en) Color filter array substrate, display device and manufacturing method of color filter array substrate
CN204289453U (zh) 一种有机发光显示器件
CN204129400U (zh) 一种coa基板和显示装置
KR20150094815A (ko) 표시 기판 및 이의 제조 방법
JP2008076702A (ja) 表示装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20141119