CN104157612A - Tft阵列基板的制作方法及tft阵列基板结构 - Google Patents

Tft阵列基板的制作方法及tft阵列基板结构 Download PDF

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Publication number
CN104157612A
CN104157612A CN201410415951.5A CN201410415951A CN104157612A CN 104157612 A CN104157612 A CN 104157612A CN 201410415951 A CN201410415951 A CN 201410415951A CN 104157612 A CN104157612 A CN 104157612A
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China
Prior art keywords
layer
pixel electrode
organic material
electrode layer
substrate
Prior art date
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CN201410415951.5A
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English (en)
Inventor
孙博
徐洪远
萧祥志
苏长义
曾勉
王笑笑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201410415951.5A priority Critical patent/CN104157612A/zh
Priority to PCT/CN2014/086264 priority patent/WO2016026183A1/zh
Priority to US14/430,205 priority patent/US9726955B2/en
Publication of CN104157612A publication Critical patent/CN104157612A/zh
Pending legal-status Critical Current

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Abstract

本发明提供一种TFT阵列基板的制作方法及TFT阵列基板结构，所述TFT阵列基板结构包括基板(1)、位于基板(1)上的第一金属电极(2)、位于基板(1)上且完全覆盖所述第一金属电极(2)的栅极绝缘层(3)、位于栅极绝缘层(3)上的岛状半导体层(4)、位于栅极绝缘层(3)与岛状半导体层(4)上的第二金属电极(6)、位于第二金属电极(6)上的保护层(8)、位于保护层(8)上的色阻层(7)、位于色阻层(7)上的保护层(12)、及位于保护层(12)上的第一像素电极层(9)；所述保护层(8)、色阻层(7)与保护层(12)上具有一过孔(81)，所述过孔(81)内部填充有机材料层(10)。

Description

TFT阵列基板的制作方法及TFT阵列基板结构
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT阵列基板的制作方法及TFT阵列基板结构。
背景技术
平面显示装置具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的平面显示装置主要包括液晶显示装置(Liquid Crystal Display，LCD)及有机电致发光显示装置(Organic Light Emitting Display，OLED)。在平板显示装置中，薄膜晶体管液晶显示器(Thin Film Transistor LiquidCrystal Dsiplay，简称TFT-LCD)具有体积小、功耗低、制造成本相对较低和无辐射等特点，在当前的平板显示器市场中占据了主导地位。
目前的液晶显示器屏幕主要原理为背光源发出白光，通过阵列基板偏光片后，由于液晶旋转角度的不同，造成光偏振态的改变，通过CF上的偏光片后，造成不同像素亮度的不同。而全彩显示器则是在CF基板上面加了一层彩色滤光片，使得不同像素RGB三基色的混光强度不同，以实现彩色显示。
为了增大开口率以及降低像素寄生电容等的影响，目前COA(ColorFilter on Array)技术被广泛采用。COA技术是将彩色滤光片与阵列基板集成在一起的其中一种集成技术。即将彩色光阻涂布于已完成的阵列上形成彩色滤光层，可以改善传统彩色滤光片开口率低的问题。
传统的液晶显示器的结构为两片玻璃基板中间夹有液晶层，在其中一片玻璃基板上制备薄膜晶体管(TFT)，用于驱动液晶的旋转，控制每个像素的显示；另一块基板上制备彩色滤光层，用于形成每个像素的色彩。彩色滤光片集成技术是将TFT和彩色滤光层制备在同一片玻璃基板上，采用这种技术具有以下优点：
(1)上下基板自对准。在传统结构下，当前后两片玻璃基板上分别加工完成TFT和彩色滤光层后，需要将两片玻璃上相应的像素位置对准后再封盒，即存在一个对准工艺，改工艺的准确性将直接影响显示器的质量。采用COA技术后，因两者都在一片玻璃上，可以自对准，省却了对准工艺，简化了加工过程，提高了产品质量。
(2)降低成本。彩色滤光片在液晶显示器的成本中占有很大的比重，将彩色滤光片制备在TFT上可以减少彩色滤光片的制造工艺，有效降低成本；另外，彩色滤光片对性能的影响很大，而彩色滤光片和液晶显示屏往往由不同厂商生产，在配合上需要消耗人力物力，质量难以保证。而COA集成技术可以解决上述问题，降低成本。
(3)提高产品性能，增大开口率，提高透过率。采用彩色滤光片技术可将黑色矩阵的线宽从27μm降低到10μm左右，可将开口率提高15％，相应的透过率也大大提高。
但是，由于彩色滤光片较厚，通常会有几个微米的厚度，这就使得联通信号线与像素电极的过孔需要做很大才能保证有效接触。由于较大的过孔，会造成气泡、开口率降低、液晶导向错乱以及配向异常等问题。
发明内容
本发明的目的在于提供一种TFT阵列基板的制作方法，该制作方法简单，该方法制得的TFT阵列基板用于液晶显示器时，可避免出现气泡等问题，提高像素开口率，防止液晶导向错乱并增大固化制程中电场的均匀性。
本发明的另一目的在于提供一种TFT阵列基板结构，其结构简单，制程简便，且使用其的液晶显示器不易产生气泡，像素开口率较高，不会出现液晶导向错乱的现象。
为实现上述目的，本发明提供一种TFT阵列基板的制作方法，包括如下步骤：
步骤1、提供一基板，在该基板上沉积第一金属层并图案化，形成第一金属电极；
步骤2、在所述第一金属电极与基板上依次形成栅极绝缘层、及岛状半导体层；
步骤3、在栅极绝缘层与岛状半导体层上沉积第二金属层并图案化，形成第二金属电极；
步骤4、在所述第二金属电极上沉积保护层并图案化，形成保护层；
步骤5、在所述保护层上涂布色阻层，在所述色阻层上沉积保护层并图案化，形成保护层，并在保护层、色阻层与保护层上形成过孔；
步骤6、在所述保护层和第二金属电极上形成像素电极层与有机材料层。
所述步骤6具体为：
步骤61、在所述保护层和第二金属电极上沉积第一像素电极层并图案化，形成第一像素电极层，所述第一像素电极层通过过孔与第二金属电极连接；
步骤62、在所述第一像素电极层上涂覆有机材料层，所述有机材料层填充过孔；
步骤63、对所述有机材料层显影处理，去除过孔外部的有机材料层。
所述步骤6具体为：
步骤611、在所述保护层和第二金属电极上沉积第一像素电极层；
步骤612、在所述第一像素电极层上涂覆有机材料层，所述有机材料层填充过孔；
步骤613、对所述有机材料层显影处理，去除过孔周围的有机材料层；
步骤614、在所述第一像素电极层和有机材料层上沉积第二像素电极层；
步骤615、采用一道光刻制程同时对第一像素电极层和第二像素电极层进行图案化处理，形成第一像素电极层和第二像素电极层，所述第一像素电极层和第二像素电极层通过过孔与第二金属电极连接。
所述步骤1-4中，采用物理气相沉积法或化学气相沉积法沉积第一金属电极、栅极绝缘层、岛状半导体层、蚀刻阻挡层、第二金属电极、及保护层。
所述步骤1中，所述基板为玻璃基板；所述步骤2中，所述岛状半导体层为非晶硅，所述栅极绝缘层、及岛状半导体层经成膜、曝光、显影、及刻蚀工艺依次形成。。
步骤5所述色阻层为RGB色阻层，所述过孔顶部的直径为20μm，所述有机材料层为光阻类材料。
所述步骤61中，采用物理气相沉积法沉积所述第一像素电极层，所述第一像素电极层材料为ITO或IZO。
采用物理气相沉积法沉积所述第一像素电极层和第二像素电极层，第一像素电极层和所述第二像素电极层材料为ITO或IZO。
本发明还提供一种TFT阵列基板结构，包括基板、位于基板上的第一金属电极、位于基板上且完全覆盖所述第一金属电极的栅极绝缘层、位于栅极绝缘层上的岛状半导体层、位于栅极绝缘层与岛状半导体层上的第二金属电极、位于第二金属电极上的保护层、位于保护层上的色阻层、位于色阻层上的保护层、及位于保护层上的第一像素电极层；所述保护层、色阻层与保护层上具有一过孔，所述过孔内部填充有机材料层；所述基板为玻璃基板，所述岛状半导体层为非晶硅，所述色阻层为RGB色阻层，所述第一像素电极层材料为ITO或IZO，所述有机材料层为光阻类材料。
还包括位于第一像素电极层与有机材料层上的第二像素电极层，所述第二像素电极层材料为ITO或IZO。
本发明的有益效果：本发明提供的TFT阵列基板的制作方法及TFT阵列基板结构，通过在过孔内部填满有机材料，以及设置两层像素电极层，减小了地形断差，使得采用该结构的像素将基本上完全平坦，且像素电极有效控制面积增大，提高了像素开口率；由于较大的过孔被填平，减小了地形断差，使得气泡风险降低；由于过孔处液晶也可有效控制，且电场无地形差异，使得固化电场均匀性提高，防止液晶导向错乱。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为本发明TFT阵列基板的制作方法的示意流程图；
图2为本发明TFT阵列基板的制作方法第一实施例步骤7的示意图；
图3为本发明TFT阵列基板的制作方法第一实施例步骤8的示意图；
图4为本发明TFT阵列基板的制作方法第二实施例步骤7的示意图；
图5为本发明TFT阵列基板的制作方法第二实施例步骤8的示意图；
图6为本发明TFT阵列基板的制作方法第二实施例步骤9的示意图；
图7为本发明TFT阵列基板的制作方法第二实施例步骤10的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
图1为本发明TFT阵列基板的制作方法的示意流程图；本说明书采用两个具体实施例对本发明TFT阵列基板的制作方法进行描述。
请参阅图1-图3，本发明TFT阵列基板的制作方法的第一实施例包括如下步骤：
步骤1、提供一基板1，在该基板1上沉积第一金属层并图案化，形成第一金属电极2。
优选的，所述基板1为玻璃基板。
步骤2、在所述第一金属电极2与基板1上经成膜、曝光、显影、刻蚀等工艺依次形成栅极绝缘层3、及岛状半导体层4。
优选的，所述岛状半导体层4为非晶硅。所述栅极绝缘层3完全覆盖第一金属电极2。
步骤3、在所述栅极绝缘层3与岛状半导体层4上沉积第二金属层并图案化，形成第二金属电极6。
步骤4、在所述第二金属电极6上沉积保护层并图案化，形成保护层8。
值得一提的是，所述步骤1-4中，均采用物理气相沉积法或化学气相沉积法沉积第一金属电极2、栅极绝缘层3、岛状半导体层4、第二金属电极6、及保护层8。
步骤5、在所述保护层8上涂布色阻层7，在所述色阻层7上沉积保护层并图案化，形成保护层12，并在保护层8，色阻层7和保护层12上形成过孔81。
具体的，所述色阻层7为RGB色阻层。优选的，所述过孔81顶部的直径为20μm左右。
步骤6、在所述保护层12和第二金属电极6上沉积第一像素电极层并图案化，形成第一像素电极层9，所述第一像素电极层9通过过孔81与第二金属电极6连接。
具体的，采用物理气相沉积法沉积所述第一像素电极层9。优选的，所述第一像素电极层9材料为ITO(氧化铟锡)或IZO(铟锌氧化物)。
步骤7、在所述第一像素电极层9上涂覆有机材料层10，所述有机材料层10填充过孔81。
此时，不仅过孔81内部，整个阵列基板最上层也都涂布满了平坦的有机材料层10。优选的，所述有机材料层10为光阻类材料。
步骤8、对所述有机材料层10显影处理，去除过孔81周围的有机材料层10。
值得一提的是，通过控制显影速度，使得显影结束时，只有过孔81内部存在有机材料层10，过孔81周围的其它地方无有机材料层10残留。
该第一实施例中通过涂布有机材料层10，使过孔81内部填满有机材料，减小了地形断差，防止了液晶导向错乱。更重要的是，减小了过孔81内液晶藏匿气体的可能，减少了出现气泡问题的风险。
请参阅图1与图4-7，本发明TFT阵列基板的制作方法的第二实施例包括如下步骤：
步骤1、提供一基板1，在该基板1上沉积第一金属层并图案化，形成第一金属电极2。
优选的，所述基板1为玻璃基板。
步骤2、在所述第一金属电极2与基板1上经成膜、曝光、显影、刻蚀等工艺依次形成栅极绝缘层3、及岛状半导体层4。
优选的，所述岛状半导体层4为非晶硅。所述栅极绝缘层3完全覆盖第一金属电极2。
步骤3、在所述栅极绝缘层3与岛状半导体层4上沉积第二金属层并图案化，形成第二金属电极6。
步骤4、在所述第二金属电极6上沉积保护层并图案化，形成保护层8。
值得一提的是，所述步骤1-4中，均采用物理气相沉积法或化学气相沉积法沉积第一金属电极2、栅极绝缘层3、岛状半导体层4、蚀刻阻挡层5、第二金属电极6、及保护层8。
步骤5、在所述保护层8上涂布色阻层7，在所述色阻层7上沉积保护层并图案化，形成保护层12，并在保护层8，色阻层7和保护层12上形成过孔81。
具体的，所述色阻层7为RGB色阻层。优选的，所述过孔81顶部的直径为20μm左右。
步骤6、在所述保护层12和第二金属电极6上沉积第一像素电极层。
具体的，采用物理气相沉积法沉积所述第一像素电极层。优选的，所述第一像素电极层材料为ITO或IZO。
步骤7、在所述第一像素电极层上涂覆有机材料层10，所述有机材料层10填充过孔81。
此时，不仅过孔81内部，整个阵列基板最上层也都涂布满了平坦的有机材料层10。优选的，所述有机材料层10为光阻类材料。
步骤8、对所述有机材料层10显影处理，去除过孔81周围的有机材料层10。
值得一提的是，通过控制显影速度，使得显影结束时，只有过孔81内部存在有机材料层10，过孔81周围的其它地方无有机材料层10残留。
步骤9、在所述第一像素电极层和有机材料层10上沉积第二像素电极层。
具体的，采用物理气相沉积法沉积所述第二像素电极层。优选的，所述第二像素电极层材料为ITO或IZO。
步骤10、采用一道光刻制程同时对第一像素电极层和第二像素电极层进行图案化处理，形成第一像素电极层9和第二像素电极层11，所述第一像素电极层9和第二像素电极层11通过过孔81与第二金属电极6连接。
与第一实施例相比，该第二实施例的不同之处在于，步骤6中在所述保护层12上沉积第一像素电极层后，先不对其进行图案化处理，而是直接进行步骤7-8的操作，最后在步骤8得到的基板上进行步骤9的操作，即沉积第二像素电极层，最后进行步骤10的操作，将第二像素电极层与第一像素电极层统一进行图案化处理。
该第二实施例中，在沉积第一像素电极层后，将COA制程所形成的巨大的过孔81通过有机材料层10的涂覆制程进行填充，然后进行平坦化处理。之后，再次进行沉积第二像素电极层的制程，最后对两层像素电极层进行统一的图案化制程。这样不仅可以使过孔处的地形断差有效消除，减少产生液晶气泡的风险，并且由于像素电极层在整个像素区几乎无地形断差，使得VA(Vertical Alignment liquid crystal，垂直排列液晶)模式制程中的固化制程的电场均匀性得到提升，不会出现液晶错乱的现象。同时，由于过孔81处的液晶也能有效控制，对于像素的开口率也会有一定程度的改善。
请参考图3，本发明提供一种TFT阵列基板结构，包括基板1、位于基板1上的第一金属电极2、位于基板1上且完全覆盖所述第一金属电极2的栅极绝缘层3、位于栅极绝缘层3上的岛状半导体层4、位于栅极绝缘层3与岛状半导体层4上的第二金属电极6、位于第二金属电极6上的保护层8、位于保护层8上的色阻层7、位于色阻层7上的保护层12、位于保护层12上的第一像素电极层9；所述保护层8、色阻层7及保护层12上具有一过孔81，所述过孔81内部填充有机材料层10；所述基板1为玻璃基板，所述岛状半导体层4为非晶硅，所述色阻层7为RGB色阻层，所述第一像素电极层9材料为ITO或IZO，所述有机材料层10为光阻类材料。
请参考图7，本发明还提供一种TFT阵列基板结构，与上一实施例相比，其不同之处在于，还包括位于第一像素电极层9与有机材料层10上的第二像素电极层11。优选的，所述第二像素电极层11材料为ITO或IZO。
综上所述，本发明提供的TFT阵列基板的制作方法及TFT阵列基板结构，通过在过孔内部填满有机材料，以及设置两层像素电极层，减小了地形断差，使得采用该结构的像素将基本上完全平坦，且像素电极有效控制面积增大，提高了像素开口率；由于较大的过孔被填平，减小了地形断差，使得气泡风险降低；由于过孔处液晶也可有效控制，且电场无地形差异，使得固化电场均匀性提高，防止液晶导向错乱。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

1.一种TFT阵列基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供一基板(1)，在该基板(1)上沉积第一金属层并图案化，形成第一金属电极(2)；
步骤2、在所述第一金属电极(2)与基板(1)上形成栅极绝缘层(3)、及岛状半导体层(4)；
步骤3、在栅极绝缘层(3)与岛状半导体层(4)上沉积第二金属层并图案化，形成第二金属电极(6)；
步骤4、在所述第二金属电极(6)上沉积保护层并图案化，形成保护层(8)；
步骤5、在所述保护层(8)上涂布色阻层(7)，在所述色阻层(7)上沉积保护层并图案化，形成保护层(12)，并在保护层(8)、色阻层(7)与保护层(12)上形成过孔(81)；
步骤6、在所述保护层(12)和第二金属电极(6)上形成像素电极层与有机材料层(10)。
2.如权利要求1所述的TFT阵列基板的制作方法，其特征在于，所述步骤6具体为：
步骤61、在所述保护层(12)和第二金属电极(6)上沉积第一像素电极层并图案化，形成第一像素电极层(9)，所述第一像素电极层(9)通过过孔(81)与第二金属电极(6)连接；
步骤62、在所述第一像素电极层(9)上涂覆有机材料层(10)，所述有机材料层(10)填充过孔(81)；
步骤63、对所述有机材料层(10)显影处理，去除过孔(81)外部的有机材料层(10)。
3.如权利要求1所述的TFT阵列基板的制作方法，其特征在于，所述步骤6具体为：
步骤611、在所述保护层(12)和第二金属电极(6)上沉积第一像素电极层；
步骤612、在所述第一像素电极层上涂覆有机材料层(10)，所述有机材料层(10)填充过孔(81)；
步骤613、对所述有机材料层(10)显影处理，去除过孔(81)周围的有机材料层(10)；
步骤614、在所述第一像素电极层和有机材料层(10)上沉积第二像素电极层；
步骤615、采用一道光刻制程同时对第一像素电极层和第二像素电极层进行图案化处理，形成第一像素电极层(9)和第二像素电极层(11)，所述第一像素电极层(9)和第二像素电极层(11)通过过孔(81)与第二金属电极(6)连接。
4.如权利要求1所述的TFT阵列基板的制作方法，其特征在于，所述步骤1-4中，采用物理气相沉积法或化学气相沉积法沉积第一金属电极(2)、栅极绝缘层(3)、岛状半导体层(4)、蚀刻阻挡层(5)、第二金属电极(6)、及保护层(8)。
5.如权利要求1所述的TFT阵列基板的制作方法，其特征在于，所述步骤1中，所述基板(1)为玻璃基板；所述步骤2中，所述岛状半导体层(4)为非晶硅，所述栅极绝缘层(3)、及岛状半导体层(4)经成膜、曝光、显影、及刻蚀工艺依次形成。
6.如权利要求1所述的TFT阵列基板的制作方法，其特征在于，步骤5所述色阻层(7)为RGB色阻层，所述过孔(81)顶部的直径为20μm，所述有机材料层(10)为光阻类材料。
7.如权利要求2所述的TFT阵列基板的制作方法，其特征在于，所述步骤61中，采用物理气相沉积法沉积所述第一像素电极层(9)，所述第一像素电极层(9)材料为ITO或IZO。
8.如权利要求3所述的TFT阵列基板的制作方法，其特征在于，采用物理气相沉积法沉积所述第一像素电极层(9)和第二像素电极层(11)，第一像素电极层(9)和所述第二像素电极层(11)材料为ITO或IZO。
9.一种TFT阵列基板结构，其特征在于，包括基板(1)、位于基板(1)上的第一金属电极(2)、位于基板(1)上且完全覆盖所述第一金属电极(2)的栅极绝缘层(3)、位于栅极绝缘层(3)上的岛状半导体层(4)、位于栅极绝缘层(3)与岛状半导体层(4)上的第二金属电极(6)、位于第二金属电极(6)上的保护层(8)、位于保护层(8)上的色阻层(7)、位于色阻层(7)上的保护层(12)、及位于保护层(12)上的第一像素电极层(9)；所述保护层(8)、色阻层(7)与保护层(12)上具有一过孔(81)，所述过孔(81)内部填充有机材料层(10)；所述基板(1)为玻璃基板，所述岛状半导体层(4)为非晶硅，所述色阻层(7)为RGB色阻层，所述第一像素电极层(9)材料为ITO或IZO，所述有机材料层(10)为光阻类材料。
10.如权利要求9所述的TFT阵列基板结构，其特征在于，还包括位于第一像素电极层(9)与有机材料层(10)上的第二像素电极层(11)，所述第二像素电极层(11)材料为ITO或IZO。
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