CN108333845A - 阵列基板、显示面板以及阵列基板的制作方法 - Google Patents

阵列基板、显示面板以及阵列基板的制作方法 Download PDF

Info

Publication number
CN108333845A
CN108333845A CN201810163135.8A CN201810163135A CN108333845A CN 108333845 A CN108333845 A CN 108333845A CN 201810163135 A CN201810163135 A CN 201810163135A CN 108333845 A CN108333845 A CN 108333845A
Authority
CN
China
Prior art keywords
layer
hole
pixel electrode
substrate
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810163135.8A
Other languages
English (en)
Inventor
陈辰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to CN201810163135.8A priority Critical patent/CN108333845A/zh
Priority to PCT/CN2018/082797 priority patent/WO2019161603A1/zh
Priority to US16/044,948 priority patent/US10644040B2/en
Publication of CN108333845A publication Critical patent/CN108333845A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

Abstract

本发明提供一种阵列基板，用于形成显示面板，包括基板，设于所述基板上的薄膜晶体管以及设于所述基板和所述薄膜晶体管上的平坦层，所述平坦层中设有露出所述薄膜晶体管的漏极的第一通孔，所述平坦层远离所述基板的表面上设有像素电极层，所述像素电极层覆盖所述第一通孔并与所述漏极接触，所述像素电极层上覆盖有光阻层，且所述光阻层填充覆盖有所述像素电极层的所述第一通孔。本发明解决了由于产品高度差距所导致的不良。

Description

阵列基板、显示面板以及阵列基板的制作方法
技术领域
本发明涉及显示技术领域，特别涉及一种阵列基板、显示面板以及阵列基板的制作方法。
背景技术
在显示屏制造中，由于低温多晶硅技术制造的产品成本较低、器件电子迁移率高等特点，低温多晶硅技术越来越受到手机、平板屏幕等制造商的青睐。但是，由于使用低温多晶硅技术技术所需的膜层较多，膜层结构复杂，导致薄膜晶体管阵列面板在经过数次膜层累加后，产品高度差距明显，在后续的成盒制程中对液晶的配向易造成较大影响，进而造成产品的不良。
发明内容
本发明的目的在于提供一种阵列基板、显示面板以及阵列基板的制作方法，以解决由于产品高度差距所导致的不良。
本发明提供一种阵列基板，用于形成显示面板，包括基板，设于所述基板上的薄膜晶体管以及设于所述基板和所述薄膜晶体管上的平坦层，所述平坦层中设有露出所述薄膜晶体管的漏极的第一通孔，所述平坦层远离所述基板的表面上设有像素电极层，所述像素电极层覆盖所述第一通孔并与所述漏极接触，所述像素电极层上覆盖有光阻层，且所述光阻层填充覆盖有所述像素电极层的所述第一通孔。
其中，所述光阻层上设有光阻柱，所述光阻柱用于支撑所述显示面板。
其中，所述基板上设有遮光层，所述遮光层上设有覆盖所述遮光层的缓冲层，所述缓冲层上设有多晶硅层，所述多晶硅层上覆盖有介电绝缘层，所述介电绝缘层中形成有两个间隔设置的且露出所述多晶硅层部分表面的第二通孔与第三通孔，所述薄膜晶体管的所述漏极与源极设于所述介电绝缘层上，且所述漏极通过所述第二通孔与所述多晶硅层接触，所述源极通过所述第三通孔与所述多晶硅层接触，所述平坦层设于所述漏极、所述源极以及所述介电绝缘层上。
其中，所述介电绝缘层包括绝缘层以及层叠于所述绝缘层上的介电层，所述薄膜晶体管的栅极设于所述绝缘层上，所述介电层覆盖所述栅极。
其中，所述平坦层上设有公共电极层，所述公共电极层上设有钝化层，所述钝化层覆盖所述公共电极层以及所述第一通孔的侧壁；所述钝化层上设有所述像素电极层，所述像素电极层覆盖所述钝化层，且所述像素电极层通过所述第一通孔与所述漏极接触。
本发明提供一种显示面板，包括上述的阵列基板。
本发明提供一种阵列基板的制作方法，包括：
提供一基板；
在所述基板上形成薄膜晶体管；
在所述基板和所述薄膜晶体管上形成平坦层；
在所述平坦层中形成露出所述薄膜晶体管的漏极的第一通孔；
在所述平坦层远离所述基板的表面上形成像素电极层，其中，所述像素电极层覆盖所述第一通孔并与所述漏极接触；
在所述像素电极层上形成覆盖所述像素电极层的光阻层，其中，所述光阻层填充覆盖有所述像素电极层的所述第一通孔。
其中，在所述基板上形成薄膜晶体管的步骤还包括：
在所述基板上形成遮光层；
在所述遮光层上形成覆盖所述遮光层的缓冲层；
在所述缓冲层上形成多晶硅层；
在所述多晶硅层上形成覆盖所述多晶硅层的介电绝缘层，在所述介电绝缘层中形成两个间隔设置的且露出所述多晶硅层部分表面的第二通孔与第三通孔；
在所述介电绝缘层上形成源极与漏极，其中，所述漏极通过所述第二通孔与所述多晶硅层接触，所述源极通过所述第三通孔与所述多晶硅层接触。
其中，在所述平坦层远离所述基板的表面上形成像素电极层的步骤包括：
在所述平坦层上形成公共电极层；
在所述公共电极层上形成覆盖所述公共电极层以及所述第一通孔侧壁的钝化层；
在所述钝化层上形成覆盖所述钝化层的像素电极层，其中，所述像素电极层通过所述第一通孔与所述漏极连接。
其中，在所述像素电极层上形成覆盖所述像素电极层的光阻层的步骤之后还包括：在所述光阻层上形成光阻柱。
综上所述，本发明的所述光阻层填充覆盖有所述像素电极层的所述第一通孔，实现了对所述阵列基板的平坦化，进而解决了由于产品高度差距明显所导致的在后续的成盒制程中对液晶的配向造成影响的技术问题，提升了产品的良率与竞争力。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的阵列基板的结构示意图。
图2是本发明实施例提供的显示面板的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，本发明提供一种阵列基板，用于形成显示面板，包括基板10，设于所述基板10上的薄膜晶体管20以及设于所述基板10和所述薄膜晶体管20上的平坦层30，所述平坦层30中设有露出所述薄膜晶体管20的漏极201的第一通孔301，所述平坦层30远离所述基板10的表面上设有像素电极层40，所述像素电极层40覆盖所述第一通孔301并与所述漏极201接触，所述像素电极层40上覆盖有光阻层50，且所述光阻层50填充覆盖有所述像素电极层40的所述第一通孔301。
本发明的所述光阻层50填充覆盖有所述像素电极层40的所述第一通孔301实现了对所述阵列基板的平坦化，进而解决了由于产品高度差距明显所导致的在后续的成盒制程中对液晶的配向造成影响的技术问题，提升了产品的良率与竞争力。
具体为，所述光阻层50包括第一子光阻层501以及与所述第一子光阻层501相连的第二子光阻层502，所述第一子光阻层501填充在覆盖有所述像素电极层40的所述第一通孔301中，所述像素电极层40包括第一子像素电极层401以及与所述第一子像素电极层401相连的第二子像素电极层402，所述第一子像素电极层401设于所述第一通孔301中且与所述漏极201相连接，所述第二子光阻层502覆盖所述第二子像素电极层402。由于所述平坦层30较厚，进而所述第一通孔301的深度较大，而所述像素电极层40的厚度较薄，即使有所述第一子像素电极层401设于所述第一通孔301中，所述第一子像素电极层401并不能把所述第一通孔301填满，而所述第一子光阻层501对覆盖有所述像素电极层40的所述第一通孔301的填充实现了对所述阵列基板的平坦化，进而提升了所述产品的良率与竞争力。
所述光阻层50上设有光阻柱60，所述光阻柱60用于支撑所述显示面板。在本实施例中，所述光阻层50与所述光阻柱60一起制成。所述光阻层50上的所述光阻柱60可实现对后续的成盒制程提供空间以及支撑所述显示面板。
在本实施例中，所述基板10上设有遮光层70，所述遮光层70上设有覆盖所述遮光层70的缓冲层80，所述缓冲层80上设有多晶硅层90，所述多晶硅层90上覆盖有介电绝缘层100，所述介电绝缘层100中形成有两个间隔设置的且露出所述多晶硅层90部分表面的第二通孔1001与第三通孔1002，所述薄膜晶体管20的所述漏极201与源极202设于所述介电绝缘层100上，且所述漏极201通过所述第二通孔1001与所述多晶硅层90接触，所述源极202通过所述第三通孔1002与所述多晶硅层90接触，所述平坦层30设于所述漏极201、所述源极202以及所述介电绝缘层100上。
在本实施例中，所述介电绝缘层100包括绝缘层1003以及层叠于所述绝缘层1003上的介电层1004，所述薄膜晶体管20的栅极203设于所述绝缘层1003上，所述介电层1004覆盖所述栅极203。
所述平坦层30上设有公共电极层110，所述公共电极层110上设有钝化层120，所述钝化层120覆盖所述公共电极层110以及所述第一通孔201的侧壁。具体为，所述钝化层120包括第一子钝化层1201以及与所述第一子钝化层1201相连的第二子钝化层1202，所述第二子钝化层1202覆盖所述公共电极层110，所述第一子钝化层1201延伸至所述第一通孔301中，并覆盖所述第一通孔301的侧壁。所述钝化层120上设有所述像素电极层40，所述像素电极层40覆盖所述钝化层120，且所述像素电极层40通过所述第一通孔201与所述漏极201接触。在本实施例中，第二子像素电极层402覆盖所述钝化层120。
请参阅图2，本发明提供一种显示面板，包括上述的阵列基板、彩膜基板130及液晶分子层140，所述彩膜基板130设于所述光阻柱60上，所述阵列基板、所述光阻柱60以及所述彩膜基板130形成一填充空间，所述液晶分子层140置于所述填充空间中。所述液晶分子层140通过扭转可以控制射出显示面板的光线亮度。所述彩膜基板130结合所述液晶分子层140可以调节三原色的光亮，得到需要的彩色显示。本发明所述的显示面板将所述彩膜基板130中的所述光阻柱60转移到所述阵列基板中，不会增加所述显示面板的成本。一起制成的所述光阻柱60与所述光阻层50不仅实现了对所述阵列基板的平坦化，解决了由于产品高度差距明显所导致的在后续的成盒制程中对液晶的配向造成影响的技术问题，提升了产品的良率与竞争力，而且实现对后续的成盒制程提供空间以及支撑所述显示面板。
本发明提供一种阵列基板的制作方法，包括：
步骤1，提供一基板10。
步骤2，在所述基板10上形成薄膜晶体管20。
步骤3，在所述基板10和所述薄膜晶体管20上形成平坦层30。
步骤4，在所述平坦层30中形成露出所述薄膜晶体管20的漏极201的第一通孔301。
步骤5，在所述平坦层30远离所述基板10的表面上形成像素电极层40。其中，所述像素电极层40覆盖所述第一通孔201与所述漏极201接触。
步骤6，在所述像素电极层40上形成覆盖所述像素电极层40的光阻层50。其中，所述光阻层50填充覆盖有所述像素电极层40的所述第一通孔301。
进一步地，在所述基板10上形成薄膜晶体管20的步骤还包括：
在所述基板10上形成遮光层70；
在所述遮光层70上形成覆盖所述遮光层70的缓冲层80；
在所述缓冲层80上形成多晶硅层90；
在所述多晶硅层90上形成覆盖所述多晶硅层90的介电绝缘层100，在所述介电绝缘层100中形成两个间隔设置的且露出所述多晶硅层90部分表面的第二通孔1001与第三通孔1002；其中，所述介电绝缘层100包括绝缘层1003以及层叠于所述绝缘层1003上的介电层1004，所述薄膜晶体管20的栅极203设于所述绝缘层1003上，所述介电层1004覆盖所述栅极203。
在所述介电绝缘层100上形成源极202与漏极201，其中，所述漏极201通过所述第二通孔1002与所述多晶硅层90接触，所述源极201通过所述第三通孔1002与所述多晶硅层90接触，所述平坦层30设于所述漏极201、所述源极202以及所述介电绝缘层100上。
进一步地，在所述平坦层30远离所述基板10的表面上形成像素电极层40的步骤包括：
在所述平坦层30上形成公共电极层110；
在所述公共电极层110上形成覆盖所述公共电极层110以及所述第一通孔301侧壁的钝化层120；
在所述钝化层120上形成覆盖所述钝化层120的像素电极层40，其中，所述像素电极层40通过所述第一通孔301与所述漏极201连接。
进一步地，在所述像素电极层40上形成覆盖所述像素电极层40的光阻层50的步骤之后还包括：在所述光阻层50上形成光阻柱60。
以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (10)

1.一种阵列基板，用于形成显示面板，其特征在于，包括基板，设于所述基板上的薄膜晶体管以及设于所述基板和所述薄膜晶体管上的平坦层，所述平坦层中设有露出所述薄膜晶体管的漏极的第一通孔，所述平坦层远离所述基板的表面上设有像素电极层，所述像素电极层覆盖所述第一通孔并与所述漏极接触，所述像素电极层上覆盖有光阻层，且所述光阻层填充覆盖有所述像素电极层的所述第一通孔。
2.根据权利要求1所述的阵列基板，其特征在于，所述光阻层上设有光阻柱，所述光阻柱用于支撑所述显示面板。
3.根据权利要求2所述的阵列基板，其特征在于，所述基板上设有遮光层，所述遮光层上设有覆盖所述遮光层的缓冲层，所述缓冲层上设有多晶硅层，所述多晶硅层上覆盖有介电绝缘层，所述介电绝缘层中形成有两个间隔设置的且露出所述多晶硅层部分表面的第二通孔与第三通孔，所述薄膜晶体管的所述漏极与源极设于所述介电绝缘层上，且所述漏极通过所述第二通孔与所述多晶硅层接触，所述源极通过所述第三通孔与所述多晶硅层接触，所述平坦层设于所述漏极、所述源极以及所述介电绝缘层上。
4.根据权利要求3所述的阵列基板，其特征在于，所述介电绝缘层包括绝缘层以及层叠于所述绝缘层上的介电层，所述薄膜晶体管的栅极设于所述绝缘层上，所述介电层覆盖所述栅极。
5.根据权利要求4所述的阵列基板，其特征在于，所述平坦层上设有公共电极层，所述公共电极层上设有钝化层，所述钝化层覆盖所述公共电极层以及所述第一通孔的侧壁；所述钝化层上设有所述像素电极层，所述像素电极层覆盖所述钝化层，且所述像素电极层通过所述第一通孔与所述漏极接触。
6.一种显示面板，其特征在于，包括如权利要求1-5任一项所述的阵列基板。
7.一种阵列基板的制作方法，其特征在于，包括：
提供一基板；
在所述基板上形成薄膜晶体管；
在所述基板和所述薄膜晶体管上形成平坦层；
在所述平坦层中形成露出所述薄膜晶体管的漏极的第一通孔；
在所述平坦层远离所述基板的表面上形成像素电极层，其中，所述像素电极层覆盖所述第一通孔并与所述漏极接触；
在所述像素电极层上形成覆盖所述像素电极层的光阻层，其中，所述光阻层填充覆盖有所述像素电极层的所述第一通孔。
8.根据权利要求7所述的阵列基板的制作方法，其特征在于，在所述基板上形成薄膜晶体管的步骤还包括：
在所述基板上形成遮光层；
在所述遮光层上形成覆盖所述遮光层的缓冲层；
在所述缓冲层上形成多晶硅层；
在所述多晶硅层上形成覆盖所述多晶硅层的介电绝缘层，在所述介电绝缘层中形成两个间隔设置的且露出所述多晶硅层部分表面的第二通孔与第三通孔；
在所述介电绝缘层上形成源极与漏极，其中，所述漏极通过所述第二通孔与所述多晶硅层接触，所述源极通过所述第三通孔与所述多晶硅层接触。
9.根据权利要求8所述的阵列基板的制作方法，其特征在于，在所述平坦层远离所述基板的表面上形成像素电极层的步骤包括：
在所述平坦层上形成公共电极层；
在所述公共电极层上形成覆盖所述公共电极层以及所述第一通孔侧壁的钝化层；
在所述钝化层上形成覆盖所述钝化层的像素电极层，其中，所述像素电极层通过所述第一通孔与所述漏极连接。
10.根据权利要求9所述的阵列基板的制作方法，其特征在于，在所述像素电极层上形成覆盖所述像素电极层的光阻层的步骤之后还包括：在所述光阻层上形成光阻柱。
CN201810163135.8A 2018-02-26 2018-02-26 阵列基板、显示面板以及阵列基板的制作方法 Pending CN108333845A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201810163135.8A CN108333845A (zh) 2018-02-26 2018-02-26 阵列基板、显示面板以及阵列基板的制作方法
PCT/CN2018/082797 WO2019161603A1 (zh) 2018-02-26 2018-04-12 阵列基板、显示面板以及阵列基板的制作方法
US16/044,948 US10644040B2 (en) 2018-02-26 2018-07-25 Array substrate, manufacturing method thereof, and display panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810163135.8A CN108333845A (zh) 2018-02-26 2018-02-26 阵列基板、显示面板以及阵列基板的制作方法

Publications (1)

Publication Number Publication Date
CN108333845A true CN108333845A (zh) 2018-07-27

Family

ID=62929869

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810163135.8A Pending CN108333845A (zh) 2018-02-26 2018-02-26 阵列基板、显示面板以及阵列基板的制作方法

Country Status (2)

Country Link
CN (1) CN108333845A (zh)
WO (1) WO2019161603A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109870855A (zh) * 2019-04-09 2019-06-11 京东方科技集团股份有限公司 一种阵列基板、液晶显示面板及液晶显示装置
CN110609407A (zh) * 2019-08-27 2019-12-24 深圳市华星光电技术有限公司 液晶显示面板及制备方法
CN110850655A (zh) * 2019-11-27 2020-02-28 Tcl华星光电技术有限公司 一种阵列基板及液晶显示面板

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004295016A (ja) * 2003-03-28 2004-10-21 Fujitsu Display Technologies Corp 液晶パネルおよびその製造方法
CN102508376A (zh) * 2011-12-15 2012-06-20 深圳市华星光电技术有限公司 液晶显示面板以及其制造方式
CN103492938A (zh) * 2011-04-07 2014-01-01 夏普株式会社 液晶显示面板和具备该液晶显示面板的液晶显示装置
CN104035231A (zh) * 2013-03-07 2014-09-10 群创光电股份有限公司 液晶显示面板及包含其的液晶显示设备
CN104157612A (zh) * 2014-08-21 2014-11-19 深圳市华星光电技术有限公司 Tft阵列基板的制作方法及tft阵列基板结构
CN104576655A (zh) * 2014-12-01 2015-04-29 深圳市华星光电技术有限公司 一种coa基板及其制作方法
CN104965365A (zh) * 2015-07-14 2015-10-07 深圳市华星光电技术有限公司 液晶显示面板及其阵列基板
CN105372889A (zh) * 2015-10-23 2016-03-02 深圳市华星光电技术有限公司 显示装置、coa基板及其制造方法
CN105842929A (zh) * 2015-01-12 2016-08-10 群创光电股份有限公司 显示装置
CN107039352A (zh) * 2017-04-12 2017-08-11 深圳市华星光电技术有限公司 Tft基板的制作方法及tft基板
CN107505786A (zh) * 2017-07-24 2017-12-22 深圳市华星光电技术有限公司 阵列基板及其制造方法、液晶显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104062821B (zh) * 2014-06-05 2017-01-04 厦门天马微电子有限公司 一种薄膜晶体管阵列基板、显示面板和显示装置
KR20160013486A (ko) * 2014-07-25 2016-02-04 삼성디스플레이 주식회사 표시 장치용 모기판, 표시 장치 및 그의 제조방법
JP2016142943A (ja) * 2015-02-03 2016-08-08 株式会社ジャパンディスプレイ 液晶表示装置
KR102377404B1 (ko) * 2015-08-21 2022-03-22 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
CN106909001B (zh) * 2017-03-20 2019-01-04 武汉华星光电技术有限公司 液晶显示面板及其制造方法、阵列基板

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004295016A (ja) * 2003-03-28 2004-10-21 Fujitsu Display Technologies Corp 液晶パネルおよびその製造方法
CN103492938A (zh) * 2011-04-07 2014-01-01 夏普株式会社 液晶显示面板和具备该液晶显示面板的液晶显示装置
CN102508376A (zh) * 2011-12-15 2012-06-20 深圳市华星光电技术有限公司 液晶显示面板以及其制造方式
CN104035231A (zh) * 2013-03-07 2014-09-10 群创光电股份有限公司 液晶显示面板及包含其的液晶显示设备
CN104157612A (zh) * 2014-08-21 2014-11-19 深圳市华星光电技术有限公司 Tft阵列基板的制作方法及tft阵列基板结构
CN104576655A (zh) * 2014-12-01 2015-04-29 深圳市华星光电技术有限公司 一种coa基板及其制作方法
CN105842929A (zh) * 2015-01-12 2016-08-10 群创光电股份有限公司 显示装置
CN104965365A (zh) * 2015-07-14 2015-10-07 深圳市华星光电技术有限公司 液晶显示面板及其阵列基板
CN105372889A (zh) * 2015-10-23 2016-03-02 深圳市华星光电技术有限公司 显示装置、coa基板及其制造方法
CN107039352A (zh) * 2017-04-12 2017-08-11 深圳市华星光电技术有限公司 Tft基板的制作方法及tft基板
CN107505786A (zh) * 2017-07-24 2017-12-22 深圳市华星光电技术有限公司 阵列基板及其制造方法、液晶显示装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109870855A (zh) * 2019-04-09 2019-06-11 京东方科技集团股份有限公司 一种阵列基板、液晶显示面板及液晶显示装置
WO2020207255A1 (zh) * 2019-04-09 2020-10-15 京东方科技集团股份有限公司 阵列基板及其制备方法、液晶显示面板、液晶显示装置
CN110609407A (zh) * 2019-08-27 2019-12-24 深圳市华星光电技术有限公司 液晶显示面板及制备方法
US11294249B2 (en) 2019-08-27 2022-04-05 Tcl China Star Optoelectronics Technology Co., Ltd. Liquid crystal display panel and manufacturing method
CN110850655A (zh) * 2019-11-27 2020-02-28 Tcl华星光电技术有限公司 一种阵列基板及液晶显示面板

Also Published As

Publication number Publication date
WO2019161603A1 (zh) 2019-08-29

Similar Documents

Publication Publication Date Title
CN104865726B (zh) 一种阵列基板、显示面板、显示装置以及制备方法
US20160372490A1 (en) Array substrate and manufacturing method thereof, and display panel
WO2017049842A1 (zh) 阵列基板及其制作方法、显示装置
JP6521534B2 (ja) 薄膜トランジスタとその作製方法、アレイ基板及び表示装置
CN106024813B (zh) 一种低温多晶硅tft阵列基板的制作方法及相应装置
CN105867692B (zh) 阵列基板、制造方法以及显示面板和电子装置
CN105068373A (zh) Tft基板结构的制作方法
CN105093763A (zh) 一种阵列基板、其制作方法、液晶显示面板及显示装置
CN203871327U (zh) 一种阵列基板及显示装置
CN104022126A (zh) 一种阵列基板、其制作方法及显示装置
CN104216182A (zh) 阵列基板及其制造方法和显示面板
CN104915052A (zh) 触控显示装置及其制备方法、电子设备
WO2015039389A1 (zh) 阵列基板及其制作方法、显示装置
US10871688B2 (en) Array substrate, manufacturing method thereof, and display device
CN104238823A (zh) 一种触控显示面板及其制备方法、触控显示装置
CN105161499A (zh) 一种显示基板及其制作方法和显示装置
CN104022156A (zh) 薄膜晶体管、阵列基板及相应的制作方法、显示装置
CN108333845A (zh) 阵列基板、显示面板以及阵列基板的制作方法
CN103698955A (zh) 像素单元、阵列基板及其制造方法和显示装置
WO2017140058A1 (zh) 阵列基板及其制作方法、显示面板及显示装置
US10541287B2 (en) Display substrate with uniform gate insulation structure
CN105097840A (zh) 一种阵列基板、其制作方法、液晶显示面板及显示装置
CN104183607A (zh) 阵列基板及其制造方法、显示装置
CN103681514A (zh) 阵列基板及其制作方法、显示装置
US11347334B2 (en) Array substrate, method for fabricating the same, and display device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20180727